KR20020040913A - 웨이퍼 표면상의 잔여물 건조 방지 방법 및 시스템과폴리싱 패드 수명 연장 방법 - Google Patents

웨이퍼 표면상의 잔여물 건조 방지 방법 및 시스템과폴리싱 패드 수명 연장 방법

Info

Publication number
KR20020040913A
KR20020040913A KR1020027005224A KR20027005224A KR20020040913A KR 20020040913 A KR20020040913 A KR 20020040913A KR 1020027005224 A KR1020027005224 A KR 1020027005224A KR 20027005224 A KR20027005224 A KR 20027005224A KR 20020040913 A KR20020040913 A KR 20020040913A
Authority
KR
South Korea
Prior art keywords
polishing
wafer
endpoint
platen
pad
Prior art date
Application number
KR1020027005224A
Other languages
English (en)
Korean (ko)
Inventor
둔톤사무엘
리앙빅터
장리밍
Original Assignee
롤페스 요하네스 게라투스 알베르투스
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롤페스 요하네스 게라투스 알베르투스, 코닌클리즈케 필립스 일렉트로닉스 엔.브이. filed Critical 롤페스 요하네스 게라투스 알베르투스
Publication of KR20020040913A publication Critical patent/KR20020040913A/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/03Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
KR1020027005224A 2000-08-24 2001-08-20 웨이퍼 표면상의 잔여물 건조 방지 방법 및 시스템과폴리싱 패드 수명 연장 방법 KR20020040913A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US64573500A 2000-08-24 2000-08-24
US09/645,735 2000-08-24
PCT/EP2001/009648 WO2002017381A2 (fr) 2000-08-24 2001-08-20 Procede de prevention des dommages aux tranches de silicium lors d'un processus sequentiel de polissage en plusieurs etapes

Publications (1)

Publication Number Publication Date
KR20020040913A true KR20020040913A (ko) 2002-05-30

Family

ID=24590257

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027005224A KR20020040913A (ko) 2000-08-24 2001-08-20 웨이퍼 표면상의 잔여물 건조 방지 방법 및 시스템과폴리싱 패드 수명 연장 방법

Country Status (5)

Country Link
EP (1) EP1312112A2 (fr)
JP (1) JP2004507109A (fr)
KR (1) KR20020040913A (fr)
CN (1) CN1636272A (fr)
WO (1) WO2002017381A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7363569B2 (en) 2001-06-29 2008-04-22 Intel Corporation Correcting for data losses with feedback and response
CN1302522C (zh) * 2002-05-15 2007-02-28 旺宏电子股份有限公司 一种化学机械抛光装置的终点侦测系统
CN102922415B (zh) * 2011-08-10 2015-05-13 无锡华润上华科技有限公司 延长研磨垫使用周期的化学机械研磨方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5951373A (en) * 1995-10-27 1999-09-14 Applied Materials, Inc. Circumferentially oscillating carousel apparatus for sequentially processing substrates for polishing and cleaning
JP3231659B2 (ja) * 1997-04-28 2001-11-26 日本電気株式会社 自動研磨装置
US6168683B1 (en) * 1998-02-24 2001-01-02 Speedfam-Ipec Corporation Apparatus and method for the face-up surface treatment of wafers
US6863593B1 (en) * 1998-11-02 2005-03-08 Applied Materials, Inc. Chemical mechanical polishing a substrate having a filler layer and a stop layer

Also Published As

Publication number Publication date
WO2002017381A2 (fr) 2002-02-28
WO2002017381A3 (fr) 2002-11-07
EP1312112A2 (fr) 2003-05-21
JP2004507109A (ja) 2004-03-04
CN1636272A (zh) 2005-07-06

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