KR20020037493A - Lcd formed a color filter on the tft array and method for manufacturing the same - Google Patents

Abstract

PURPOSE: An LCD having a color filter formed on a TFT array and a method of fabricating the LCD are provided to form a TFT array and a color filter on one substrate. CONSTITUTION: An LCD having a color filter formed on a TFT array includes a substrate(20), a TFT array layer(30) formed on the substrate, and R,G,B color filter stripes(41b,41c,41d) formed on the TFT array layer. The LCD further includes a black matrix(42) formed between the color filter stripes, and a dielectric layer(43) burying the color filter stripes and the black matrix. The LCD also has a contact hole(44) exposing a part of the TFT array layer, formed on the dielectric layer, and a pixel electrode layer(45) arranged in parallel with the black matrix. The pixel electrode layer buries the dielectric layer and the contact hole.

Description

LCD with color filter formed on TF array and its manufacturing method {LCD FORMED A COLOR FILTER ON THE TFT ARRAY AND METHOD FOR MANUFACTURING THE SAME}

The present invention relates to an LCD having a color filter formed on a thin film transistor (TFT) array and a method for manufacturing the same. More particularly, the color filter and the TFT array are integrated to simplify a manufacturing process. Of course, the invention relates to an LCD and a method of manufacturing the color filter formed on the improved TFT array so that the weight and thickness can be realized.

For example, when manufacturing an active matrix liquid crystal display (LCD), a TFT array substrate and a color filter substrate are usually manufactured separately, and then an LCD is completed by performing a liquid crystal process.

Here, the color filter is for realizing a color image using white light on a predetermined substrate, and an example of a conventional color filter substrate is illustrated in FIG. 1.

As shown, the color filter substrate is, for example, a black matrix layer 12 formed in a predetermined pattern on the substrate 11 of glass material, and red, blue and green colors formed between the black matrix layer 12. The filter layer 13a, 13b, 13c, and the black matrix layer 12 and the color filter layer 13a, 13b, 13c are formed on the upper side, and the protective layer 14 which consists of ITO is comprised.

The color filter substrate is mounted on a super twisted nematic (STN) liquid crystal display device, a liquid crystal display device using a thin film transistor (TFT), and the like to implement a color image.

As a method of manufacturing the color filter substrate as described above, there are a dyeing method, a dye dispersion method, a pigment dispersion method, a printing method, an electrodeposition method and the like. Here, the pigment dispersion method is a method of manufacturing a color filter by coating, exposing, developing, and firing a pigment composition dispersed in a photoresist.

By the way, it is not easy to align and assemble the color filter substrate manufactured in this way and the TFT array substrate manufactured separately from this, for example, ± 1 μm while maintaining the positional accuracy required for the display quality.

In particular, it is very difficult to manage the yield due to defective bundles in mass production. In addition, it is preferable to use the same thickness of, for example, 0.7mm for stabilizing the handling of the substrate in the manufacturing process, such as the thickness of the two sheets, which becomes a factor that increases the volume and weight when the LCD is completed.

In addition, since it is difficult to maintain and assemble the position accuracy according to the use of two substrates, for example, high resolution production of 200 dpi or more is difficult.

The present invention has been made to solve the above problems, an LCD and a method of manufacturing the color filter is formed on a TFT array is a high-resolution, easy to manufacture by integrating the TFT array and the color filter on one substrate The purpose is to provide.

1 is a schematic cross-sectional view showing the configuration of a general color filter substrate.

2 is a cross-sectional view schematically showing the configuration of an LCD having a color filter formed on a TFT array according to the present invention.

3 is a schematic flowchart sequentially illustrating a method of manufacturing an LCD having a color filter formed on a TFT array according to the present invention;

4A to 4E are schematic cross-sectional views sequentially showing an LCD manufacturing method in which a color filter is formed on a TFT array according to the present invention;

5 is a view for explaining an LCD manufacturing method in which a color filter is formed on a TFT array according to the present invention;

<Description of the symbols for the main parts of the drawings>

20. Substrate 30. TFT array layer

40. Color filter layers 41b, 41c, 41d. Color filter stripe layer

42. Black matrix layer Dielectric layer

44. Contact hole 45. Pixel electrode layer

An LCD having a color filter formed on a TFT array of the present invention for achieving the above object includes a substrate; A TFT array layer formed on the substrate; A color filter stripe layer of R, G, and B formed successively at predetermined intervals on said TFT array layer; A black matrix layer formed as a partition in the space formed between the color filter stripe layers; A dielectric layer filling the color filter stripe layer and the black matrix layer and flatly formed thereon; A contact hole formed by exposing a portion of the TFT array layer at predetermined intervals on the dielectric layer; And a pixel electrode layer formed to form a space at a predetermined interval parallel to the black matrix layer and filling the dielectric layer and the contact hole.

An LCD manufacturing method in which a color filter is formed on a TFT array of the present invention for achieving the above object comprises the steps of: (a) preparing a substrate; (b) forming a TFT array layer on the substrate; (c) forming a color filter stripe layer of R, G, and B on the TFT array layer in alternating succession at predetermined intervals; (d) forming a black matrix layer so as to form a partition on and between the color filter stripe layer; (e) filling the color filter stripe layer and the black matrix layer to form a dielectric layer flatly; (f) forming a contact hole for the pixel electrode to expose the TFT array layer at predetermined intervals over the dielectric layer; (g) forming a pixel electrode layer on the dielectric layer and in the contact hole.

In the present invention, in the step (c), the color filter stripe layer is formed by scanning using a dithering laser light source, and the width of the dithering is overlapped by 5 to 10 mu m.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view schematically showing the configuration of an LCD on which a color filter is formed on a TFT array according to the present invention. Here, the description of the general configuration of the LCD will be omitted, and only the configuration according to the features of the present invention will be described.

Referring to the drawings, an LCD having a color filter formed on a TFT array according to the present invention includes a substrate 20, a TFT array layer 30 formed on the substrate 20, and the TFT array layer 30. And a color filter layer 40 formed on the TFT array layer 30 formed thereon.

The TFT array layer 30 may include, for example, a gate electrode layer 36 formed on a substrate 20 made of glass, and an insulating layer 31 formed on the substrate 20 to fill and insulate the gate electrode layer 36. And an amorphous silicon layer (a-si) 32 formed on the insulating layer 31 and the left and right sides thereof and on the insulating layer 31 so as to expose a central portion of the amorphous silicon layer 32. A passivation layer for protecting the above-mentioned layers by forming a source layer 33 and a drain layer 34 and an exposed portion 35a to expose a portion of the drain layer 34. layer 35).

The color filter layer 40 formed on the TFT array layer 30 configured as described above may include the first space portion 41a and the exposed portion 35a except for the first space portion 41a and the exposed portion 35a formed in parallel with the gate electrode layer 36. R, G, and B color filter stripe layers 41b, 41c, and 41d successively formed in the protective layer 35 and the color filter stripe layers 41b and 41c so as to extend while filling the first space portion 41a. And a black matrix layer 42 formed as a partition on the 41d, the color filter stripe layers 41b, 41c, 41d, the black matrix layer 42, and the exposed portion 35a, and are formed to be flat thereon. A second portion of the dielectric layer 43, a contact hole 44 for the pixel electrode formed so that the exposed portion 35a is exposed again, and a portion of the dielectric layer exposed in parallel with the first space portion 41a; The pixel electrode layer 45 is formed so that the space 45a is formed and the exposed portion 35a is buried. It is broken.

The dielectric layer 43 is formed to have a thickness of 1.0 to 2.5 μm, and its uniformity is preferably maintained at 3% or less, and the thickness of the pixel electrode layer 45 is formed to be 500 μm or less.

An LCD manufacturing method in which a color filter is formed on a TFT array according to the present invention having the configuration as described above is as follows. Here, the description of the general TFT LCD manufacturing method will be omitted, and only the manufacturing method according to the features of the present invention will be described.

3 is a schematic flow chart sequentially illustrating a method of manufacturing an LCD in which a color filter is formed on a TFT array according to the present invention.

As shown, first, as shown in FIG. 4A, for example, a glass substrate 20 is prepared. (Step 110) At this time, the substrate 20 is cleaned and rinsed. Remove impurities on). Subsequently, a TFT array layer 30 is formed on the substrate 20 (step 120).

As described above, in the method of forming the TFT array layer 30, the gate electrode layer 36 is formed on the substrate 20, the gate electrode layer 36 is embedded and insulated on the substrate 20 to be insulated. A layer 31 is formed, and an amorphous silicon layer 32 is formed on the insulating layer 31, and a center portion of the amorphous silicon layer 32 is exposed on the left and right sides and the insulating layer 31. The source layer 33 and the drain layer 34 are formed. In addition, the exposed portion 35a is formed to expose a portion of the drain layer 34 to form a protective layer 35 for protecting the above-mentioned layers.

Subsequently, as shown in FIG. 4B, the TFT array layer 30 formed as described above is alternately disposed at predetermined intervals, and color filter stripe layers 41b, 41c, and 41d of R, G, and B are formed. (Step 130) At this time, the color filter stripe layer 41b is formed by placing the first space portion 41a side by side in the center of the gate electrode layer 36 and the exposed portion 35a so that the drain layer 34 is exposed. 41c and 41d).

As shown in FIG. 4C, the black matrix layer 42 is formed such that the partition wall is formed to extend while filling the first space portion 41a. (Step 140) In addition, as shown in FIG. 4D. The dielectric layer 43 is formed so that the color filter stripe layers 41b, 41c, 41d and the black matrix layer 42 are embedded and the upper surface thereof is flat.

Next, as shown in FIG. 4E, a contact hole 44 for the pixel electrode is formed to expose the drain layer 34 so that the exposed portion 35a can be exposed (step 160). As shown, the pixel electrode layer 45 is formed on the dielectric layer 43 and the contact hole 44 with the second space portion 45a parallel to the first space portion 41a.

Although not shown in the drawings, the LCD is manufactured and then finally finished after the liquid crystal process.

In step 130, the color filter stripe layers 41b, 41c, and 41d are formed by scanning using a dithering laser light source, and the width of the dithering is overlapped by 5 to 10 μm. The contact hole 44 is simultaneously formed in the dielectric layer 43 and the color filter stripe layers 41b, 41c, and 41d by dry etching.

That is, the color filter stripe layers 41b, 41c, and 41d use a laser transfer method, and form a stripe pattern by aligning with a data line using a laser having a uniform energy density. The contact holes 44, which are difficult to manufacture by the laser transfer method, are formed together with the dielectric etch without manufacturing the color filter layer 40.

Features of the LCD manufacturing method in which the color filter is formed on the TFT array according to the present invention manufactured as described above will be described in more detail.

The TFT array layer 30 is formed on the substrate 20, and the color filter layer 40 is formed thereon, using an alignment mark key produced when the color filter layer 40 is formed. The color filter stripe layers 41b, 41c, and 41d are formed in the order of R, G, and B by scanning a laser having a uniform energy density. In the method of forming the color filter stripe layers 41b, 41c, and 41d, a stripe input condition is previously input after securing position information of an alignment mark key on a color layer coated on a base film such as PET. For example, it is formed with a stripe width, a stripe layout, an energy dose, or the like.

The reason for using a light source having uniform energy is that both ends of the color filter width formed on the TFT array layer 30 always have a uniform line width variation, for example, ± 1 μm. For example, in the case of a non-uniform Gaussian beam, it is very difficult to form a uniform width because the energy region at the end is wide. A method of making a light source having a uniform laser energy density is to use a laser optical system to distort in one direction, and then scan the beam by shaking the pattern width in the short direction to form a uniform energy density in the short direction of the stripe. It is called ring technology, and in the case of manufacturing by this method, the width to be dithered is scanned by overlapping the width of the electrode line by about 5 to 10 mu m. In another method, the beam of the laser light source may be mixed with various beams having a uniform laser density.

As described above, dithering and scanning used in the laser patterning method may scan various waveforms of the laser beam, for example, a triangle sine wave and the like. In the case of using several laser beams, the method is similar to that described above, except that the laser beams are simultaneously scanned by the stripe width.

In each unexplained reference numeral in Fig. 5, arrow A is the dithering direction, B is the scanning direction, and W and L respectively represent the pattern width and the data wiring, respectively.

In addition, the dielectric layer 43 is a black matrix in order to suppress the generation of parasitic capacitance due to the uniformity of the capacitance value of the liquid crystal cell and the wiring of the TFT array layer 30 under the color filter layer 40 when the LCD is driven. Dielectric layer 43 is coated over color filter stripe layers 41b, 41c, 41d including layer 42.

The contact hole 44 is formed by a laser transfer method for electrical connection between the pixel electrode and the drain electrode formed on the dielectric layer 43, and may be easily formed by dry etching.

In addition, the connection with the drain electrode exposed through the formation of the contact hole 44 and the formation of the pixel electrode are performed by the reactive sputtering method, and the pixel electrode patterning is performed by the photolithography method to ensure the maximum transmittance or less. do.

As described above, the LCD having the color filter formed on the TFT array and the method of manufacturing the same according to the present invention have the following effects.

As in the related art, a large number of masks required for manufacturing a TFT array substrate and a color filter substrate are required. However, in the case of an integrated LCD, the number of masks can be greatly reduced, thereby reducing the number of manufacturing processes.

The thickness and weight of the substrate according to the integrated type can be reduced, and the material of the common electrode substrate can be replaced with non-glass, thereby realizing light weight.

In addition, when using a laser transfer method, it is not necessary to drill a contact hole in advance, and by using a laser having a uniform energy density, it is possible to secure excellent width fluctuation rate and position accuracy.

Although the present invention has been described with reference to one embodiment shown in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent embodiments are possible. Therefore, the true scope of protection of the present invention should be defined only by the appended claims.

Claims (6)

A substrate; A TFT array layer formed on the substrate; A color filter stripe layer of R, G, and B formed successively at predetermined intervals on said TFT array layer; A black matrix layer formed as a partition in the space formed between the color filter stripe layers; A dielectric layer filling the color filter stripe layer and the black matrix layer and flatly formed thereon; A contact hole formed by exposing a portion of the TFT array layer at predetermined intervals on the dielectric layer; And a pixel electrode layer formed at a predetermined interval parallel to the black matrix layer, and filling the dielectric layer and the contact hole, wherein the color filter is formed on the TFT array. The method of claim 1, And the dielectric layer is formed to a thickness of 1.0 to 2.5 [mu] m, and uniformity is maintained at 3% or less. The method of claim 1, An LCD having a color filter formed on the TFT array, wherein the pixel electrode layer is formed to have a thickness of 500 μs or less. (a) preparing a substrate; (b) forming a TFT array layer on the substrate; (c) forming a color filter stripe layer of R, G, and B on the TFT array layer in alternating succession at predetermined intervals; (d) forming a black matrix layer so as to form a partition on and between the color filter stripe layer; (e) filling the color filter stripe layer and the black matrix layer to form a dielectric layer flatly; (f) forming a contact hole for the pixel electrode to expose the TFT array layer at predetermined intervals over the dielectric layer; and (g) forming a pixel electrode layer on the dielectric layer and in the contact hole. The method of claim 4, wherein in step (c), The color filter stripe layer is formed by scanning with a dithering laser light source, and the width of the dithering is a color filter is formed on the TFT array, characterized in that the color filter formed on the TFT array. The method of claim 4, wherein in step (f), And the contact hole is formed at the same time on the dielectric layer and the color filter stripe layer by dry etching.