CN101030586B - Thin-film transistor array base-plate structure and its production - Google Patents
Thin-film transistor array base-plate structure and its production Download PDFInfo
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- CN101030586B CN101030586B CN2007100878675A CN200710087867A CN101030586B CN 101030586 B CN101030586 B CN 101030586B CN 2007100878675 A CN2007100878675 A CN 2007100878675A CN 200710087867 A CN200710087867 A CN 200710087867A CN 101030586 B CN101030586 B CN 101030586B
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Abstract
The invention is concerned with the plaque structure of the thin film transistor array, consists of the thin film transistor array plaque that forms on the organic material layer of the plaque, and several black matrixes and colorful filtering design setting on the organic material layer. The invention is also concerned with the manufacture method of the thin film transistor array plaque.
Description
Technical field
The present invention relates to a kind of semiconductor structure, particularly a kind of film transistor array base plate structure and manufacture method thereof.
Background technology
LCD is present widely used a kind of flat-panel screens, it has characteristics such as low consumption electrical power, slim light weight and low voltage drive, can be applicable to the portable machine in personal computer, word processor, navigation system, recreation device, projector, view finder and the life, for example wrist-watch, electronic computer or television set etc. show in the use.
The colorize technology of relevant LCD, (color filter is to make LCD present the vital part of bright colour painting face CF) to colored filter.Traditionally, colored filter be configured on the different substrate as the thin-film transistor of driving switch, and be positioned at the liquid crystal layer both sides.Influence usefulness for avoiding light to enter thin-film transistor, be arranged on light shield layer (black matrix, black matrix) on the substrate identical again usually and be positioned at the thin-film transistor top with colored filter.Yet, such configuration mode, cost is higher, technology is time-consuming and need a lot of processing steps.And the light shield layer on the colored filter so must consider can broad to the error on the group, and then reduce the aperture opening ratio of panel.
Therefore, develop and a kind of so-called COA (color filter on array) technology, its purpose is exactly in order to obtain high aperture opening ratio.Right so traditionally technology needs 9 road technologies to comprise 5 channel arrays (Array) technology and 4 road CF technologies altogether, and manufacturing cost is also quite high.
Summary of the invention
The invention provides a kind of film transistor array base plate structure, comprise thin-film transistor array base-plate, be formed at the organic material layer on this substrate, and a plurality of black matrix and color filter patterns that is arranged on this organic material layer.
The present invention provides a kind of manufacture method of film transistor array base plate structure in addition, comprises the following steps.Thin-film transistor array base-plate is provided, the coating organic material layer is on this substrate, form a plurality of black matrix pattern on this organic material layer, spray a plurality of color filter patterns on this organic material layer with ink jet printing method (ink-jet printing), form first opening with laser ablation method (laser ablation) and pass this black matrix and this organic material layer of part, expose this thin-film transistor, and form the indium tin oxide patterned layer in this black matrix, this color filter patterns and this first open surfaces, be electrically connected to form with this thin-film transistor.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Description of drawings
Fig. 1 is the generalized section of film transistor array base plate structure of the present invention.
Fig. 2 A～2F is the generalized section of film transistor array base plate structure manufacture method of the present invention.
The mask that Fig. 3 A designs for the present invention.
The opening size of Fig. 3 B after designing mask exposure of the present invention.
Description of reference numerals
10 film transistor array base plate structures; 12,34 thin-film transistors;
14,32 substrates; 16,48 organic material layers;
18,50 black matrixes; 20,52 color filter patterns;
22,54 first openings; 23,55 second openings;
24,56 indium tin oxide patterned layer; 13,46 storage capacitors;
30 thin-film transistor array base-plates; 36 grids;
38 insulating barriers; 40 amorphous silicons/n type doped amorphous silicon layer;
42 source/drain electrodes; 44 holding wires;
60 masks; First hole of 62 corresponding black matrixes;
Second hole of 64 corresponding color filter patterns.
Embodiment
The invention provides a kind of film transistor array base plate structure, comprise thin-film transistor array base-plate, be formed on the organic material layer on the substrate, and a plurality of black matrix and color filter patterns that is arranged on the organic material layer.
Above-mentioned organic material layer for example be benzocyclobutane (benzocyclobutane, BCB), acrylic acid (acrylic) or methyl silazane (methylsilazane, MSZ).The thickness of black matrix can be lower than 5 μ m and composition material can be organic material.Color filter patterns can be made of organic dyestuff, comprises red filter pattern, green filter pattern or blue filter pattern.
Above-mentioned array base-plate structure also comprises second opening that passes black matrix and part organic material layer and first opening that is connected with thin-film transistor and pass color filter patterns and part organic material layer and be connected with storage capacitors, and this color filter patterns for example is red filter pattern, green filter pattern or blue color filter patterns.Its aperture of second opening that forms in color filter patterns is substantially the same.In addition, also comprise the indium tin oxide patterned layer, this indium tin oxide layer is formed on black matrix, color filter patterns, first opening and second opening, and is electrically connected with thin-film transistor and storage capacitors.
See also Fig. 1, film transistor array base plate structure of the present invention is described.Film transistor array base plate structure 10 comprises substrate 14, organic material layer 16 and a plurality of black matrix 18 and color filter patterns 20 that is provided with thin-film transistor 12 and storage capacitors 13.Organic material layer 16 is formed on substrate 14, storage capacitors 13 and the thin-film transistor 12, and black matrix 18 is arranged on the organic material layer 16 with color filter patterns 20.In the structure, also comprise first opening 22 that passes black matrix 18 and part organic material layer 16 and be connected and second opening 23 that passes color filter patterns 20 and part organic material layer 16 and be connected, and be formed on and deceive on matrix 18, color filter patterns 20, first opening 22 and second opening 23 and the indium tin oxide patterned layer 24 that is electrically connected with thin-film transistor 12 and storage capacitors 13 with storage capacitors 13 with thin-film transistor 12.
The present invention provides a kind of manufacture method of film transistor array base plate structure in addition, comprises the following steps.At first, provide thin-film transistor array base-plate.Afterwards, the coating organic material layer is on substrate.Then, form a plurality of black matrixes on organic material layer.Afterwards, spray a plurality of color filter patterns on organic material layer with ink jet printing method.Then, form a plurality of first openings with laser ablation method, this first opening passes corresponding black matrix and part organic material layer respectively, exposes the thin-film transistor of corresponding part; And form a plurality of second openings, pass corresponding color filter patterns and part organic material layer respectively and be connected with corresponding storage capacitors.At last, form a plurality of indium tin oxide patterned layer on this black matrix and color filter patterns, this indium tin oxide patterned layer is electrically connected with corresponding thin-film transistor and storage capacitors by the first corresponding opening and second opening respectively.
Above-mentioned organic material layer for example is benzocyclobutane, acrylic acid or methyl silazane, and the composition material of black matrix can be organic material, and color filter patterns can be made of organic dyestuff, comprises red filter pattern, green filter pattern or blue filter pattern.
Above-mentioned black matrix can be formed on the organic material layer by photoetching process or laser ablation method, and the laser energy density that uses in the laser ablation method is substantially between 10J/cm
2～0.25mJ/cm
2Spray the spray rate of color filter patterns substantially between 10pl/drop～5 μ l/drop with ink jet printing method.In addition, indium tin oxide layer can be formed on black matrix, color filter patterns and open surfaces by sputtering method or rubbing method.
Be to utilize silicon nitride or silicon oxy-nitride material insulating protective layer traditionally as source/drain electrode; yet; if use this kind material desire to make when being electrically connected opening, must can finish through a succession of steps such as chemical vapour deposition (CVD), photoresist coating, exposure, development, etching and photoresist lift offs.Not only formality is numerous and diverse and the relevant equipment and material of chemical vapour deposition (CVD) must be arranged, and cost incurs a considerable or great expense.The present invention promptly selects for use the organic material with flattening surface effect to replace protective layer material originally.
The technology of film transistor array base plate structure of the present invention is in conjunction with the ink jet printing method of making color filter patterns (resistance of RGB look) and make the laser ablation method that is electrically connected opening, the combination of these two kinds of technology is compared with known gold-tinted, developing process, really can effectively reduce below COA technology sum to four road, significantly reduce cost.
Yet, when making opening to deceiving matrix and color filter patterns with laser ablation method, neither identical because of deceiving matrix and various color filter patterns to the absorption of laser, if under same laser technology condition, may cause residual colorized optical filtering material or each opening size problem not of uniform size in the opening, and influence the contact impedance of follow-up indium-tin oxide electrode overlap joint.At this point, the present invention also provides simply and solution cheaply.
Fig. 2 A～2F discloses the manufacture method of film transistor array base plate structure of the present invention.
See also 2A figure, thin-film transistor array base-plate 30 is provided.Thin-film transistor array base-plate 30 can be made of the substrate 32 of for example glass material and the thin-film transistor 34 that is provided with thereon.Thin-film transistor 34 from bottom to top can comprise insulating barrier 38, the amorphous silicon/n type doped amorphous silicon layer 40 of grid 36, for example silicon nitride and the source/drain electrode 42 that for example is made of metal.The metal level of this making source, place/drain electrode also can form the holding wire 44 that is connected with source electrode at the ad-hoc location on the substrate 32.In general, grid 36 can be landscape configuration, and holding wire 44 can be vertical configuration, and both define rectangular a plurality of pixel regions (not shown).In addition, in substrate 32, also can produce and the storage capacitors 46 that drains and be connected.
See also Fig. 2 B, coating organic material layer 48 is on substrate 32 and thin-film transistor 34.Organic material layer 48 can be made of for example materials such as benzocyclobutane, acrylic acid or methyl silazane.
Afterwards, define a plurality of black matrixes 50 on organic material layer 48, shown in Fig. 2 C with for example photoetching process or laser ablation method.Black matrix 50 can be made of organic material, and in the laser ablation method employed laser energy density substantially between 10J/cm
2～0.25mJ/cm
2
See also Fig. 2 D, spray the color filter patterns 52 of a plurality of for example RGB looks resistances on organic material layer 48 with ink jet printing method.Color filter patterns 52 can be made of organic dyestuff, and the spray rate of ink jet printing method spraying color filter patterns 52 is substantially between 10pl/drop～5 μ l/drop.
See also Fig. 2 E, form first opening 54 with laser ablation method, pass black matrix 50 and part organic material layer 48, expose the source/drain electrode 42 of thin-film transistor 34 and form second opening 55, pass color filter patterns 52 and part organic material layer 48, expose storage capacitors 46.Herein in the laser ablation method employed laser energy density substantially between 10J/cm
2～0.25mJ/cm
2
The method that the present invention forms opening comprises the mode that cooperates laser ablation method with mask.Mask (as shown in Figure 3A) for example is provided, passes mask with the laser that laser ablation method provides again, and produce first opening 54 and second opening 55.
See also Fig. 3 A, mask comprises first hole of corresponding black matrix and second hole of corresponding color filter patterns.It should be noted that, the laser energy size that the color filter patterns that the pore size of second hole is corresponding with it absorbs is inversely proportional to, that is to say that the color filter patterns of this hole correspondence is if the laser energy that absorbs is bigger, then aperture size must design littler, for instance, if the laser energy that green filter pattern absorbs is greater than blue filter pattern, the laser energy that blue filter pattern absorbs is greater than red filter pattern, then on the mask between each hole the design of size dimension must meet following rule, i.e. the hole aperture d of corresponding red filter pattern
R_CstMust be greater than the hole aperture d of the blue filter pattern of correspondence
B_Cst, the hole aperture d of corresponding blue filter pattern
B_CstMust be greater than the hole aperture d of the green filter pattern of correspondence
G_Cst
The present invention utilizes special mask to cooperate the laser technology in single road, can produce and meet demand and uniform opening (for example first opening 54 and second opens 55), shown in Fig. 3 B, with simply, mode has solved that the colorized optical filtering material can't remove problem clean and that each opening size differs, the overlap joint of favourable follow-up indium-tin oxide electrode in the opening cheaply.
See also Fig. 2 F, form indium tin oxide patterned layer 56 in black matrix 50, color filter patterns 52, first opening 54 and second opening, 55 surfaces, to be electrically connected with storage capacitors 46 with the source/drain electrode 42 of thin-film transistor 34 with sputtering method or rubbing method.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention, when can doing to change and retouching, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.
Claims (15)
1. film transistor array base plate structure comprises:
Substrate comprises thin film transistor (TFT) array;
A plurality of storage capacitors are formed on this substrate;
Organic material layer is formed on this substrate;
A plurality of black matrixes and color filter patterns are arranged on this organic material layer;
A plurality of first openings, that passes correspondence respectively should deceive matrix and this organic material layer of part, with this corresponding thin-film transistor connection;
A plurality of second openings pass corresponding color filter patterns and this organic material layer of part respectively, with this corresponding storage capacitors connection; And
A plurality of indium tin oxide patterned layer, be formed at corresponding being somebody's turn to do on black matrix and this color filter patterns respectively, and by this corresponding first opening and corresponding this thin-film transistor electrical connection and pass through this corresponding second opening and be electrically connected with corresponding this storage capacitors, wherein the aperture of this second opening is identical.
2. film transistor array base plate structure as claimed in claim 1, wherein this organic material layer comprises benzocyclobutane, acrylic acid or methyl silazane.
3. film transistor array base plate structure as claimed in claim 1 wherein should be made of organic material by black matrix.
4. film transistor array base plate structure as claimed in claim 1, the thickness that wherein should deceive matrix is lower than 5 μ m.
5. film transistor array base plate structure as claimed in claim 1, wherein this color filter patterns is made of organic dyestuff.
6. film transistor array base plate structure as claimed in claim 1, wherein this color filter patterns comprises red filter pattern, green filter pattern and blue filter pattern.
7. the manufacture method of a film transistor array base plate structure comprises:
Substrate is provided, and this substrate comprises thin film transistor (TFT) array;
On this substrate, be coated with organic material layer;
Form a plurality of black matrixes on this organic material layer;
Spray a plurality of color filter patterns on this organic material layer with ink jet printing method;
Mask is provided, this mask comprises a plurality of to first hole that should deceive matrix and a plurality of to second hole that should color filter patterns, the laser that provides by laser ablation method passes this mask, to form this first opening and a plurality of second opening that passes this color filter patterns and this organic material layer of part, this first opening passes corresponding being somebody's turn to do respectively and deceives matrix and this organic material layer of part, expose this corresponding thin-film transistor, this second opening exposes a plurality of storage capacitors; And
Form a plurality of indium tin oxide patterned layer on this black matrix and this color filter patterns, this indium tin oxide patterned layer is electrically connected by this first opening of correspondence and this corresponding thin-film transistor respectively,
Wherein this color filter patterns absorption laser energy size that this second hole pore size is corresponding with it is inversely proportional to.
8. the manufacture method of film transistor array base plate structure as claimed in claim 7, wherein this organic material layer comprises benzocyclobutane, acrylic acid or methyl silazane.
9. the manufacture method of film transistor array base plate structure as claimed in claim 7 wherein should be formed on this organic material layer by photoetching process or laser ablation method by black matrix.
10. the manufacture method of film transistor array base plate structure as claimed in claim 9, wherein the laser energy density of this laser ablation method is between 10J/cm
2～0.25mJ/cm
2
11. the manufacture method of film transistor array base plate structure as claimed in claim 7 wherein should be made of organic material by black matrix.
12. the manufacture method of film transistor array base plate structure as claimed in claim 7, wherein the spray rate of this ink jet printing method is between 10pl/drop～5 μ l/drop.
13. the manufacture method of film transistor array base plate structure as claimed in claim 7, wherein this color filter patterns is made of organic dyestuff.
14. the manufacture method of film transistor array base plate structure as claimed in claim 7, wherein this color filter patterns comprises red filter pattern, green filter pattern and blue filter pattern.
15. the manufacture method of film transistor array base plate structure as claimed in claim 7, wherein this indium tin oxide patterned layer is formed at this black matrix, this color filter patterns and this first and second open surfaces by sputtering method or rubbing method.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007100878675A CN101030586B (en) | 2006-06-05 | 2007-03-21 | Thin-film transistor array base-plate structure and its production |
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| CN200610088729.4 | 2006-06-05 | ||
| CN 200610088729 CN1862350A (en) | 2006-06-05 | 2006-06-05 | Film transistor array substrate structure and mfg. method thereof |
| CN2007100878675A CN101030586B (en) | 2006-06-05 | 2007-03-21 | Thin-film transistor array base-plate structure and its production |
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| CN101030586B true CN101030586B (en) | 2010-07-14 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101226946B (en) * | 2008-02-18 | 2010-11-24 | 友达光电股份有限公司 | Initiative array substrate, liquid crystal display panel and manufacturing method thereof |
| CN101916742B (en) * | 2008-02-18 | 2013-05-22 | 友达光电股份有限公司 | Active array substrate, liquid crystal display panel and manufacturing method thereof |
| KR101201138B1 (en) * | 2008-05-28 | 2012-11-13 | 도판 인사츠 가부시키가이샤 | Method for producing color filter, method for producing substrate with pattern, and small photomask |
| CN103149763B (en) * | 2013-02-28 | 2016-04-13 | 京东方科技集团股份有限公司 | TFT-LCD array substrate, display panel and preparation method thereof |
| CN103258793A (en) | 2013-03-29 | 2013-08-21 | 京东方科技集团股份有限公司 | Manufacturing method of COA array substrate, array substrate and display device |
| CN103928471B (en) * | 2014-03-24 | 2016-10-05 | 京东方科技集团股份有限公司 | A kind of array base palte and preparation method thereof, display device |
| CN104393003A (en) * | 2014-10-31 | 2015-03-04 | 深圳市华星光电技术有限公司 | TFT substrate and manufacturing method thereof |
| CN104332478A (en) | 2014-11-17 | 2015-02-04 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method as well as display device |
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| CN1403861A (en) * | 2001-08-31 | 2003-03-19 | 日本电气株式会社 | Method for producing reflector and liquid crystal display |
| CN1693976A (en) * | 2004-04-30 | 2005-11-09 | Lg.菲利浦Lcd株式会社 | Array substrate for liquid crystal display device and fabricating method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1403861A (en) * | 2001-08-31 | 2003-03-19 | 日本电气株式会社 | Method for producing reflector and liquid crystal display |
| CN1693976A (en) * | 2004-04-30 | 2005-11-09 | Lg.菲利浦Lcd株式会社 | Array substrate for liquid crystal display device and fabricating method thereof |
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