KR20020036134A - Layout of bitline contacts in a semiconductor device - Google Patents

Abstract

PURPOSE: A layout of a bit line contact of a semiconductor device is provided to prevent an adjacent bit line from being short-circuited through the bit line contact, by forming a landing plug in direct contact with an impurity diffusion region of a substrate and by forming an open portion of the landing plug only in a main cell area. CONSTITUTION: The main cell area and a dummy cell area are defined in a semiconductor substrate(20) of the first conductivity type where the active region(21) and an isolation region are defined by a field insulation layer. A pair of word lines(220,221) crossing the active region are formed on the substrate. An impurity doping region of the second conductivity type is formed in the active region not overlapping the word line. The first interlayer dielectric covers the substrate. The first to third landing plugs(230,231,232) penetrate a predetermined portion of the first interlayer dielectric and comes in contact with the impurity doping region in the main cell area. The fourth and fifth landing plugs(233,234) penetrate a predetermined portion of the first interlayer dielectric and comes in contact with the impurity doping region in the dummy cell area. The second interlayer dielectric is formed on the first interlayer dielectric to cover the landing plugs. A bit line is disposed on the second interlayer dielectric, in contact with only the bit line contact plug in the main cell area and in perpendicular to the word line.

Description

Layout of bitline contacts in a semiconductor device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bit line contact layout of a semiconductor device, and in particular, to form a normal bit line contact in a main cell and to leave a polysilicon plug used as a landing pad in a dummy cell, without an insulating layer without further processing. The present invention relates to a layout of a dummy cell bit line and a bit line contact of a semiconductor device, the patterning device of which is to prevent electrical short between the bit line contact portions.

In general, a semiconductor memory device has a layout in which a dummy cell surrounds an outer side of a main cell. When the bit line and the storage electrode node contacts are formed using a pre-poly plug (PPP) method in such a device, the landing pad of the dummy cell is abnormally fined for various reasons such as a loading effect and a pattern shape of a photo process. Subsequently, bit lines of adjacent main cells and dummy cells are short-circuited.

1 is a layout of a main cell and a dummy cell bit line contact of a semiconductor device according to the related art.

Referring to FIG. 1, an element active region 11 and an element isolation region are defined by a field oxide film on a first conductive silicon substrate 10, which is a semiconductor substrate on which a main cell portion and a dummy cell portion D1 are defined. .

The word lines 120 and 121 are formed to cross the element active region 11 of the main cell portion and the dummy cell portion D1. At this time, a pair of word lines are arranged in the element active region 11 of each section.

In addition, the device active region 11 that does not overlap the word lines 120 and 121 is a second conductivity type impurity ion doped region, which becomes the source / drain of the transistor.

Although not shown, a first interlayer insulating layer made of an insulating material such as an oxide film is formed to cover the substrate including the word lines 120 and 121.

In the main cell portion, a conductor such as polysilicon penetrating a predetermined portion of the first interlayer insulating layer so as to contact the second conductivity type impurity doped region of one device active region 11 through which a pair of word lines 120 pass. The first to third landing plugs 130, 131, and 132 are formed. In this case, the second landing plug 131 positioned at the center and partially extending to the device isolation region is formed for the bit line contact and is located at the left and right sides of the 131 and overlaps only the device active region. The third landing plug 132 is for storage electrode node contact of the capacitor.

Meanwhile, the poly penetrating the predetermined portion of the first interlayer insulating layer to contact the second conductivity type impurity doped region of one device active region 11 through which a pair of word lines 121 pass through the dummy cell portion D1. Fourth to fifth landing plugs 133 and 134 made of a conductor such as silicon are formed. In this case, the fifth landing plug 134 positioned at the center of the device active region and partially extending to the device isolation region is for the bit line contact, and the fourth landing plug 133 positioned at the left side of the capacitor 131 is formed of the capacitor. For storage electrode node contacts.

Although not shown, a second interlayer insulating layer made of an insulating material such as an oxide film is disposed on the first interlayer insulating layer to cover the landing plugs.

And a bit made of a conductive material so as to contact the surface of the second isolation plug 131 of the main cell portion 131 and the fifth isolation plug 141 of the dummy cell portion D1 disposed on the element isolation region. Line contact plugs 140 and 141 are formed to penetrate the second interlayer insulating layer.

The bit line 15, which contacts the bit line contact plugs 140 and 141 of the main cell portion and the dummy cell portion D1, is disposed on the second interlayer insulating layer in a form orthogonal to the word line.

However, in the prior art, the landing pad of the dummy cell portion located at the outermost part of the cell region may not be normally formed due to the difference in the loading effect and the pattern formed in the photolithography process for forming the landing plug. There is a problem of electrically shorting the main cell of the adjacent bit line through the bit line contact and the bit line.

Accordingly, an object of the present invention is to form a normal bit line contact in the main cell and to leave a polysilicon plug used as a landing pad in the dummy cell, but to pattern an insulating layer so that no via hole is formed, thereby preventing an electrical short between the bit line contact portions. The present invention provides a dummy cell bit line and bit line contact contact layout of a semiconductor device.

A bit line contact layout of a semiconductor device according to the present invention for achieving the above objects is a device on a first conductivity type semiconductor substrate in which a main cell portion and a dummy cell portion are defined and a device active region and a device isolation region are defined by a field insulating film. A pair of word lines across the active region, a second conductivity type impurity doped region formed in the device active region not overlapping the word lines, a first interlayer dielectric layer covering the substrate including the word lines; First to third landing plugs passing through a predetermined portion of the first interlayer insulating layer to contact the second conductive dopant doped region of the device active region through which the word line passes; In the micelle portion, the first interlayer break so as to contact the second conductivity type impurity doped region of the device active region through which the word line passes Fourth to fifth landing plugs made of a conductor such as polysilicon penetrating a predetermined portion of the layer, a second interlayer insulating layer disposed on the first interlayer insulating layer to cover the landing plugs, and extending to the device isolation region A bit line contact plug formed to penetrate the second interlayer insulating layer so as to contact a surface on the device isolation region of the second landing plug of the main cell portion disposed so as to contact the bit line contact plug; And a bit line disposed on the second interlayer insulating layer in a form orthogonal to the word line.

1 illustrates a main cell and a dummy cell bit line contact layout of a semiconductor device according to the related art.

2 illustrates a main cell and a dummy cell bit line contact layout of a semiconductor device according to the present invention.

The present invention excludes the bit line contact of the dummy cell unit so that the main cell operates normally even when a problem occurs due to abnormal patterning of the dummy cell in the structure of the semiconductor memory device having a pre-poly plug (PPP) structure and the dummy cell unit. That is, according to the present invention, the dummy cell part disposed at the outermost part to surround the main cell part when the landing pad is formed in direct contact with the source / drain of the transistor device is electrically connected to the main cell part through the bit line contact. The formation of the outermost bit line contact connected to the landing pad is excluded from the dummy cell part so as to prevent the problem of connecting to the landing pad.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

2 is a layout of a main cell and a dummy cell bit line contact of a semiconductor device according to the present invention.

Referring to FIG. 2, an element active region 21 and an element isolation region are defined by a field oxide layer on a first conductive silicon substrate 20, which is a semiconductor substrate on which a main cell portion and a dummy cell portion D2 are defined. . In this case, the main cell part refers to an area in which the main cells surrounded by the dummy cell part D2 are formed.

The word lines 220 and 221 are formed to cross the device active region 21 of the main cell portion and the dummy cell portion D2. At this time, a pair of word lines are arranged in the element active region 21 of each part.

In addition, the device active region 21 that does not overlap the word lines 220 and 221 is a second conductivity type impurity ion doped region and becomes a source / drain of the transistor.

Although not shown, a first interlayer insulating layer made of an insulating material such as an oxide film is formed to cover the substrate including the word lines 220 and 221.

In the main cell portion, a conductor such as polysilicon penetrating a predetermined portion of the first interlayer insulating layer so as to contact the second conductivity type impurity doping region of one device active region 21 through which a pair of word lines 220 pass. The first to third landing plugs 230, 231, and 232 are formed. In this case, the second landing plug 231 positioned in the center and partially extending to the device isolation region may be a first landing plug 230 for bit line contact and positioned to the left and right of the 231 and overlapping only the device active region. The third landing plug 232 is for storage electrode node contact of the capacitor.

Meanwhile, the poly penetrating the predetermined portion of the first interlayer insulating layer to contact the second conductivity type impurity doping region of one device active region 21 through which a pair of word lines 221 pass through the dummy cell portion D2. Fourth to fifth landing plugs 233 and 234 made of a conductor such as silicon are formed. At this time, the fifth landing plug 234 positioned at the center of the device active region and partially extending to the device isolation region is for the bit line contact, and the fourth landing plug 233 positioned at the left side of the capacitor is formed on the capacitor. For storage electrode node contacts.

Although not shown, a second interlayer insulating layer made of an insulating material such as an oxide film is disposed on the first interlayer insulating layer to cover the landing plugs.

In addition, a bit line contact plug 24 made of a conductive material penetrates through the second interlayer insulating layer so as to contact a surface on the device isolation region of the second landing plug 231 of the main cell portion disposed to extend into the device isolation region. It is formed to.

The bit lines 25 which contact only the bit line contact plugs 24 of the main cell portion are arranged on the second interlayer insulating layer in a form orthogonal to the word lines.

As described above, in the present invention, since the contact plug connected to the landing pad is formed only in the main cell portion and not in the dummy cell portion D2, the short circuit between the bit lines due to the short circuit between the landing pads of the dummy cell portion D2 is prevented. do.

In order to exclude the formation of the contact plug in the dummy cell portion, in the present invention, after forming the landing plug, a second interlayer insulating layer is formed, and then an etch mask is formed in a photolithography to open the contact hole on the bit line contact portion. Since only the bit line contact landing plug 231 of the main cell portion is formed to be exposed, the second interlayer insulating layer is formed by etching, so that no additional deduction is required.

Accordingly, the bit line contact layout of the semiconductor device according to the present invention forms a landing plug in direct contact with the impurity diffusion region of the substrate, and then forms a landing plug open portion only in the main cell portion, thereby shortening adjacent bit lines through the bit line contact. Since it is prevented to reduce the defects of the product has the advantage to increase the yield.

Claims (5)

A pair of word lines crossing the device active region on the first conductive semiconductor substrate in which the main cell portion and the dummy cell portion are defined and the device active region and the device isolation region are defined by the field insulating film; A second conductivity type impurity doped region formed in the device active region not overlapping the word line; A first interlayer insulating layer covering the substrate including the word line; First to third landing plugs passing through a predetermined portion of the first interlayer insulating layer so as to contact the second conductivity type impurity doped region of the device active region through which the word line passes; A fourth through a fourth conductive material made of a conductor such as polysilicon passing through a predetermined portion of the first interlayer insulating layer so as to contact the second conductive impurity doped region of the device active region through which the word line passes; 5 landing plugs, A second interlayer dielectric layer located on said first interlayer dielectric layer to cover said landing plugs; A bit line contact plug formed to penetrate the second interlayer insulating layer so as to contact a surface on the device isolation region of the second landing plug of the main cell portion disposed to extend to the device isolation region; And a bit line in contact with only the bit line contact plug of the main cell part, the bit line being disposed on the second interlayer insulating layer in a form orthogonal to the word line. The method according to claim 1, The second landing plug, which is positioned at the center of the device active region and partially extended to the device isolation region, is used for bit line contact, and is positioned at left and right sides thereof and overlaps only the device active region. The landing plug is a bit line contact layout of a semiconductor device, characterized in that it is for a storage electrode node contact of a capacitor. The method according to claim 1, The fifth landing plug positioned at the center of the device active region and partially extending to the device isolation region is for a dummy contact, and the fourth landing plug at the left side is for a storage electrode node contact of the dummy capacitor. Bit line contact layout of a semiconductor device. The method according to claim 1, And the dummy cell portion is formed to surround the main cell portion. The method according to claim 1, And the main cell portion and the dummy cell portion constitute a DRAM device.