KR20020016714A - 엑스-선 검출소자 및 그의 제조방법 - Google Patents
엑스-선 검출소자 및 그의 제조방법 Download PDFInfo
- Publication number
- KR20020016714A KR20020016714A KR1020000049902A KR20000049902A KR20020016714A KR 20020016714 A KR20020016714 A KR 20020016714A KR 1020000049902 A KR1020000049902 A KR 1020000049902A KR 20000049902 A KR20000049902 A KR 20000049902A KR 20020016714 A KR20020016714 A KR 20020016714A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- electrode
- gate
- silicon layer
- polycrystalline silicon
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 9
- 238000003860 storage Methods 0.000 claims abstract description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 23
- 238000002161 passivation Methods 0.000 claims abstract description 21
- 239000011521 glass Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 abstract description 12
- 230000000903 blocking effect Effects 0.000 abstract description 8
- 238000009413 insulation Methods 0.000 abstract 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 description 31
- 238000001514 detection method Methods 0.000 description 17
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 12
- 229910052750 molybdenum Inorganic materials 0.000 description 12
- 239000011733 molybdenum Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (4)
- 글라스 기판과;상기 글라스 기판 상에 형성되는 그라운드 전극과;상기 그라운드 전극 상에 형성되는 스토리지 절연막과;상기 스토리지 절연막 상에 형성되는 다결정 실리콘층과;상기 다결정 실리콘층 상에 형성되는 제1 게이트 절연막과;상기 게이트 절연막 상에 형성되는 게이트 전극과;상기 게이트 전극 상에 형성되는 제2 게이트 절연막과;상기 제1 및 제2 게이트 절연막을 경유하여 형성되는 제1 컨택홀과;상기 제1 컨택홀을 통해 상기 다결정 실리콘층과 접속되도록 형성되는 소오스 및 드레인전극과;상기 소오스 및 드레인전극 상에 형성되는 패시베이션층과;상기 패시베이션층 및 제1 및 제2 게이트절연막을 경유하여 상기 다결정 실리콘층이 외부로 노출되도록 하기 위한 제2 컨택홀을 구비하는 것을 특징으로 하는 엑스-선 검출소자.
- 제 1 항에 있어서,상기 다결정 실리콘층은 상기 소오스 및 드레인전극과 접속되는 부분과 상기 그라운드 전극과 대응되게 형성되는 부분 사이에 비정질 실리콘층이 잔재하는 것을특징으로 하는 엑스-선 검출소자.
- 상기 글라스 기판 상에 그라운드 전극을 형성하는 단계와;상기 그라운드 전극 상에 스토리지 절연막을 형성하는 단계와;상기 스토리지 절연막 상에 다결정 실리콘층을 형성하는 단계와;상기 다결정 실리콘층 상에 제1 절연막을 형성하는 단계와;상기 게이트 절연막 상에 게이트 전극을 형성하는 단계와;상기 게이트 전극 상에 제2 절연막을 형성하는 단계와;상기 제1 및 제2 게이트 절연막을 경유하여 제1 컨택홀을 형성하는 단계와;상기 제1 컨택홀을 통해 상기 다결정 실리콘층과 접속되도록 소오스 및 드레인전극을 형성하는 단계와;상기 소오스 및 드레인전극 상에 패시베이션층을 형성하는 단계와;상기 패시베이션층 및 제1 및 제2 게이트절연막을 경유하여 상기 다결정 실리콘층이 외부로 노출되도록 하기 위해 제2 컨택홀을 형성하는 단계를 포함하는 것을 특징으로 하는 엑스-선 검출소자의 제조방법.
- 제 3 항에 있어서,상기 다결정 실리콘층은 상기 소오스 및 드레인전극과 접속되는 부분과 상기 그라운드 전극과 대응되게 형성되는 부분 사이에 비정질 실리콘층이 잔재하는 것을 특징으로 하는 엑스-선 검출소자의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000049902A KR100698238B1 (ko) | 2000-08-26 | 2000-08-26 | 엑스-선 검출소자 및 그의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000049902A KR100698238B1 (ko) | 2000-08-26 | 2000-08-26 | 엑스-선 검출소자 및 그의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020016714A true KR20020016714A (ko) | 2002-03-06 |
KR100698238B1 KR100698238B1 (ko) | 2007-03-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020000049902A KR100698238B1 (ko) | 2000-08-26 | 2000-08-26 | 엑스-선 검출소자 및 그의 제조방법 |
Country Status (1)
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KR (1) | KR100698238B1 (ko) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2807122B2 (ja) * | 1992-04-10 | 1998-10-08 | カシオ計算機株式会社 | 薄膜トランジスタの製造方法 |
JP3274081B2 (ja) * | 1997-04-08 | 2002-04-15 | 松下電器産業株式会社 | 薄膜トランジスタの製造方法および液晶表示装置の製造方法 |
JPH1168109A (ja) * | 1997-08-26 | 1999-03-09 | Matsushita Electric Ind Co Ltd | 多結晶薄膜の製造方法及び薄膜トランジスタの製造方法 |
KR100546265B1 (ko) * | 1997-08-27 | 2006-03-23 | 삼성전자주식회사 | 다결정실리콘박막트랜지스터의제조방법 |
-
2000
- 2000-08-26 KR KR1020000049902A patent/KR100698238B1/ko active IP Right Grant
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Publication number | Publication date |
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KR100698238B1 (ko) | 2007-03-21 |
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