KR20010080575A - 액티브 모드와 슬립 모드에서 동작 가능한 전자 디지털 회로 - Google Patents

액티브 모드와 슬립 모드에서 동작 가능한 전자 디지털 회로 Download PDF

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Publication number
KR20010080575A
KR20010080575A KR1020017006554A KR20017006554A KR20010080575A KR 20010080575 A KR20010080575 A KR 20010080575A KR 1020017006554 A KR1020017006554 A KR 1020017006554A KR 20017006554 A KR20017006554 A KR 20017006554A KR 20010080575 A KR20010080575 A KR 20010080575A
Authority
KR
South Korea
Prior art keywords
transistor
storage
circuit
power
node
Prior art date
Application number
KR1020017006554A
Other languages
English (en)
Korean (ko)
Inventor
반데르미르폴알
Original Assignee
롤페스 요하네스 게라투스 알베르투스
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롤페스 요하네스 게라투스 알베르투스, 코닌클리즈케 필립스 일렉트로닉스 엔.브이. filed Critical 롤페스 요하네스 게라투스 알베르투스
Publication of KR20010080575A publication Critical patent/KR20010080575A/ko

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/3562—Bistable circuits of the master-slave type
    • H03K3/35625—Bistable circuits of the master-slave type using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020017006554A 1999-09-28 2000-09-15 액티브 모드와 슬립 모드에서 동작 가능한 전자 디지털 회로 KR20010080575A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP99203168 1999-09-28
EP99203168.2 1999-09-28
PCT/EP2000/009084 WO2001024364A1 (en) 1999-09-28 2000-09-15 Electronic digital circuit operable active mode and sleep mode

Publications (1)

Publication Number Publication Date
KR20010080575A true KR20010080575A (ko) 2001-08-22

Family

ID=8240682

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017006554A KR20010080575A (ko) 1999-09-28 2000-09-15 액티브 모드와 슬립 모드에서 동작 가능한 전자 디지털 회로

Country Status (4)

Country Link
EP (1) EP1166444A1 (ja)
JP (1) JP2003510941A (ja)
KR (1) KR20010080575A (ja)
WO (1) WO2001024364A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101025364B1 (ko) * 2004-07-09 2011-03-28 모사이드 테크놀로지스 코포레이션 집적회로의 정적 누설을 최소화하기 위한 시스템 및 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6563356B2 (en) * 1999-10-19 2003-05-13 Honeywell International Inc. Flip-flop with transmission gate in master latch
EP1331736A1 (en) * 2002-01-29 2003-07-30 Texas Instruments France Flip-flop with reduced leakage current
KR100519787B1 (ko) * 2002-11-07 2005-10-10 삼성전자주식회사 슬립 모드에서 데이터 보존이 가능한 ｍｔｃｍｏｓ플립플롭 회로
US7227383B2 (en) 2004-02-19 2007-06-05 Mosaid Delaware, Inc. Low leakage and data retention circuitry
CN102055439B (zh) * 2004-02-19 2015-04-15 考文森智财管理公司 低漏电及数据保持电路
US7382178B2 (en) 2004-07-09 2008-06-03 Mosaid Technologies Corporation Systems and methods for minimizing static leakage of an integrated circuit
CN101980472B (zh) * 2010-10-28 2012-12-26 南京大学 带唤醒功能的远程恒压馈电方法和系统

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2631335B2 (ja) * 1991-11-26 1997-07-16 日本電信電話株式会社 論理回路
JP3561012B2 (ja) * 1994-11-07 2004-09-02 株式会社ルネサステクノロジ 半導体集積回路装置
JP3080062B2 (ja) * 1998-04-06 2000-08-21 日本電気株式会社 半導体集積回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101025364B1 (ko) * 2004-07-09 2011-03-28 모사이드 테크놀로지스 코포레이션 집적회로의 정적 누설을 최소화하기 위한 시스템 및 방법

Also Published As

Publication number Publication date
WO2001024364A1 (en) 2001-04-05
EP1166444A1 (en) 2002-01-02
JP2003510941A (ja) 2003-03-18

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