KR20010075057A - 마이크로 디바이스에서의 브리지 형성 방법 - Google Patents

마이크로 디바이스에서의 브리지 형성 방법 Download PDF

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Publication number
KR20010075057A
KR20010075057A KR1020017003187A KR20017003187A KR20010075057A KR 20010075057 A KR20010075057 A KR 20010075057A KR 1020017003187 A KR1020017003187 A KR 1020017003187A KR 20017003187 A KR20017003187 A KR 20017003187A KR 20010075057 A KR20010075057 A KR 20010075057A
Authority
KR
South Korea
Prior art keywords
infill
channel
infill material
primary region
suspension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020017003187A
Other languages
English (en)
Korean (ko)
Inventor
마크에드워드맥나이
Original Assignee
스켈톤 에스. 알.
더 세크러터리 오브 스테이트 포 디펜스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스켈톤 에스. 알., 더 세크러터리 오브 스테이트 포 디펜스 filed Critical 스켈톤 에스. 알.
Publication of KR20010075057A publication Critical patent/KR20010075057A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/567Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode
    • G01C19/5677Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially two-dimensional [2D] vibrators, e.g. ring-shaped vibrators
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00095Interconnects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5705Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis
    • G01C19/5712Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802Details
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/01Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109Bridges
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00Microstructural systems or auxiliary parts thereof
    • B81B2207/07Interconnects

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Defrosting Systems (AREA)
  • Treatment And Processing Of Natural Fur Or Leather (AREA)
  • Gyroscopes (AREA)
  • Pressure Sensors (AREA)
KR1020017003187A 1998-09-12 1999-09-13 마이크로 디바이스에서의 브리지 형성 방법 Withdrawn KR20010075057A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9819817.9 1998-09-12
GBGB9819817.9A GB9819817D0 (en) 1998-09-12 1998-09-12 Improvements relating to micro-machining
PCT/GB1999/003026 WO2000016105A1 (en) 1998-09-12 1999-09-13 Formation of a bridge in a micro-device

Publications (1)

Publication Number Publication Date
KR20010075057A true KR20010075057A (ko) 2001-08-09

Family

ID=10838705

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017003187A Withdrawn KR20010075057A (ko) 1998-09-12 1999-09-13 마이크로 디바이스에서의 브리지 형성 방법

Country Status (11)

Country Link
US (1) US6846426B1 (https=)
EP (1) EP1116038B1 (https=)
JP (1) JP2002525212A (https=)
KR (1) KR20010075057A (https=)
AT (1) ATE508370T1 (https=)
AU (1) AU5873899A (https=)
CA (1) CA2343308A1 (https=)
DE (1) DE69943412D1 (https=)
GB (1) GB9819817D0 (https=)
NO (1) NO322454B1 (https=)
WO (1) WO2000016105A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100837987B1 (ko) * 2000-06-21 2008-06-16 텍사스 인스트루먼츠 인코포레이티드 용해 수지를 이용하는 마이크로 전기기계 시스템 장치의재코팅 방법
ITTO20020793A1 (it) 2002-09-12 2004-03-13 Olivetti Jet Spa Metodo per ricoprire selettivamente una superficie microlavorata.
US7424198B2 (en) * 2004-09-27 2008-09-09 Idc, Llc Method and device for packaging a substrate
US7573547B2 (en) 2004-09-27 2009-08-11 Idc, Llc System and method for protecting micro-structure of display array using spacers in gap within display device
US8685778B2 (en) 2010-06-25 2014-04-01 International Business Machines Corporation Planar cavity MEMS and related structures, methods of manufacture and design structures
US9630836B2 (en) * 2015-09-30 2017-04-25 Mems Drive, Inc. Simplified MEMS device fabrication process

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US3560893A (en) * 1968-12-27 1971-02-02 Rca Corp Surface strip transmission line and microwave devices using same
US4289846A (en) * 1979-12-28 1981-09-15 General Electric Company Process for forming low-reactance interconnections on semiconductors
US4997521A (en) * 1987-05-20 1991-03-05 Massachusetts Institute Of Technology Electrostatic micromotor
US4851080A (en) * 1987-06-29 1989-07-25 Massachusetts Institute Of Technology Resonant accelerometer
US4945069A (en) 1988-12-16 1990-07-31 Texas Instruments, Incorporated Organic space holder for trench processing
GB8921722D0 (en) * 1989-09-26 1989-11-08 British Telecomm Micromechanical switch
US5473945A (en) * 1990-02-14 1995-12-12 The Charles Stark Draper Laboratory, Inc. Micromechanical angular accelerometer with auxiliary linear accelerometer
US5090254A (en) * 1990-04-11 1992-02-25 Wisconsin Alumni Research Foundation Polysilicon resonating beam transducers
EP0543901B1 (en) * 1990-08-17 1995-10-04 Analog Devices, Inc. Monolithic accelerometer
US5198385A (en) * 1991-01-11 1993-03-30 Harris Corporation Photolithographic formation of die-to-package airbridge in a semiconductor device
US5337606A (en) 1992-08-10 1994-08-16 Motorola, Inc. Laterally sensitive accelerometer and method for making
US5479042A (en) * 1993-02-01 1995-12-26 Brooktree Corporation Micromachined relay and method of forming the relay
US5275973A (en) * 1993-03-01 1994-01-04 Motorola, Inc. Method for forming metallization in an integrated circuit
US5324553A (en) * 1993-04-30 1994-06-28 Energy Conversion Devices, Inc. Method for the improved microwave deposition of thin films
US5427975A (en) * 1993-05-10 1995-06-27 Delco Electronics Corporation Method of micromachining an integrated sensor on the surface of a silicon wafer
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
US5364497A (en) * 1993-08-04 1994-11-15 Analog Devices, Inc. Method for fabricating microstructures using temporary bridges
US5516720A (en) 1994-02-14 1996-05-14 United Microelectronics Corporation Stress relaxation in dielectric before metallization
US5725729A (en) * 1994-09-26 1998-03-10 The Charles Stark Draper Laboratory, Inc. Process for micromechanical fabrication
US5563105A (en) * 1994-09-30 1996-10-08 International Business Machines Corporation PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element
US5656123A (en) * 1995-06-07 1997-08-12 Varian Associates, Inc. Dual-frequency capacitively-coupled plasma reactor for materials processing
US5798283A (en) * 1995-09-06 1998-08-25 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
US5738757A (en) * 1995-11-22 1998-04-14 Northrop Grumman Corporation Planar masking for multi-depth silicon etching
JPH09190764A (ja) * 1996-01-08 1997-07-22 Yamaha Corp 電界放射型素子の製造方法
JPH09264900A (ja) * 1996-03-29 1997-10-07 Murata Mfg Co Ltd 熱式流速センサの製造方法
JPH09279365A (ja) * 1996-04-11 1997-10-28 Mitsubishi Materials Corp 微細構造部品を製造する方法
US5747353A (en) * 1996-04-16 1998-05-05 National Semiconductor Corporation Method of making surface micro-machined accelerometer using silicon-on-insulator technology
US5686743A (en) 1996-07-10 1997-11-11 Trw Inc. Method of forming airbridged metallization for integrated circuit fabrication
US5871655A (en) * 1998-03-19 1999-02-16 International Business Machines Corporation Integrated conductor magnetic recording head and suspension having cross-over integrated circuits for noise reduction

Also Published As

Publication number Publication date
EP1116038A1 (en) 2001-07-18
NO20011229D0 (no) 2001-03-09
WO2000016105A1 (en) 2000-03-23
DE69943412D1 (de) 2011-06-16
GB9819817D0 (en) 1998-11-04
ATE508370T1 (de) 2011-05-15
CA2343308A1 (en) 2000-03-23
EP1116038B1 (en) 2011-05-04
US6846426B1 (en) 2005-01-25
JP2002525212A (ja) 2002-08-13
NO20011229L (no) 2001-05-11
AU5873899A (en) 2000-04-03
NO322454B1 (no) 2006-10-09

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20010312

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20020416

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid