KR20010057125A - 양극이 처리된 유기발광소자 제조방법 - Google Patents
양극이 처리된 유기발광소자 제조방법 Download PDFInfo
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- KR20010057125A KR20010057125A KR1019990058903A KR19990058903A KR20010057125A KR 20010057125 A KR20010057125 A KR 20010057125A KR 1019990058903 A KR1019990058903 A KR 1019990058903A KR 19990058903 A KR19990058903 A KR 19990058903A KR 20010057125 A KR20010057125 A KR 20010057125A
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- plasma
- light emitting
- organic light
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- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000005406 washing Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 4
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims abstract description 3
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- 238000004381 surface treatment Methods 0.000 claims description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- JSHPTIGHEWEXRW-UHFFFAOYSA-N 5-hydroxypentan-2-one Chemical group CC(=O)CCCO JSHPTIGHEWEXRW-UHFFFAOYSA-N 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 12
- 239000007924 injection Substances 0.000 abstract description 12
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 abstract description 3
- 235000019404 dichlorodifluoromethane Nutrition 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 description 19
- 239000001301 oxygen Substances 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 238000009832 plasma treatment Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 3
- 229920000547 conjugated polymer Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- -1 oxygen ions Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 241001126918 Sycon Species 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (11)
- 유기기판위에 적층된 ITO(Indium Tin Oxide)를 준비하여 세척하는 단계;상기 세척된 ITO에 F를 함유하는 플라즈마를 작용시켜 표면을 처리하는 단계;상기 ITO 위에 발광층을 형성하는 단계; 및상기 발광층의 적어도 일부분 위에 음극을 형성하는 단계로 구성된 유기발광소자 제조방법.
- 제1항에 있어서, 상기 플라즈마는 SF6플라즈마, CF4플라즈마 및 CCl2F2플라즈마로 이루어진 일군으로부터 선택되는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 ITO를 세척하는 단계는,ITO를 DI워터샤워로 세척하는 단계;ITO를 트리클로로에틸렌 속에서 초음파세척하는 단계; 및아세토 및 이소프로필알콜로 세척하는 단계로 이루어진 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 플라즈마는 약 30W의 출력으로 작용하는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 플라즈마는 약 70W의 출력으로 작용하는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 발광층을 형성하는 단계는,클로로폼이 함유된 MEH-PVP 용액을 ITO 위에 스핀코팅하는 단계; 및상기 코팅된 MEH-PVP 용액을 진공상태에서 고온의 판(hot plate)에 올려 놓고 건조하는 단계로 이루어진 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 음극은 일함수가 2.5∼3.3인 금속인 것을 특징으로 하는 방법.
- 제7항에 있어서, 상기 음극은 Ca인 것을 특징으로 하는 방법.
- 유리기판위에 적층된 양극인 ITO와, 상기 ITO에 형성되어 빛이 발산되는 발광층 및 상기 발광층 위에 형성된 음극으로 이루어진 유기발광소자에 있어서,상기 ITO에 F를 함유하는 플라즈마를 인가하여 ITO의 표면을 처리하는 유기발광소자의 ITO 표면처리방법.
- 제9항에 있어서, 상기 SF6플라즈마는 약 30W의 출력으로 작용하는 것을 특징으로 하는 방법.
- 제9항에 있어서, 상기 SF6플라즈마는 약 70W의 출력으로 작용하는 것을 특징으로 하는 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990058903A KR100340411B1 (ko) | 1999-12-18 | 1999-12-18 | 양극이 처리된 유기발광소자 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990058903A KR100340411B1 (ko) | 1999-12-18 | 1999-12-18 | 양극이 처리된 유기발광소자 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010057125A true KR20010057125A (ko) | 2001-07-04 |
KR100340411B1 KR100340411B1 (ko) | 2002-06-12 |
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KR1019990058903A KR100340411B1 (ko) | 1999-12-18 | 1999-12-18 | 양극이 처리된 유기발광소자 제조방법 |
Country Status (1)
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KR (1) | KR100340411B1 (ko) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030063974A (ko) * | 2002-01-25 | 2003-07-31 | 주식회사 컴텍스 | 유기 전계발광 디스플레이용 투명전극의 제조방법 |
KR100611754B1 (ko) * | 2004-05-19 | 2006-08-10 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자의 제조 방법 |
US20070046183A1 (en) * | 2005-08-29 | 2007-03-01 | Kwok Hoi S | Metallic anode treated by carbon tetrafluoride plasma for organic light emitting device |
WO2007081120A1 (en) * | 2006-01-09 | 2007-07-19 | Lg Chem, Ltd. | Organic light emitting device having surface-treated bottom electrode |
KR100765728B1 (ko) * | 2006-03-31 | 2007-10-11 | 성균관대학교산학협력단 | 산소 플라즈마 및 열처리를 이용한 ito 표면처리방법 및이 방법에 의해 제조된 oled 소자 |
US7531834B2 (en) | 2004-11-11 | 2009-05-12 | Samsung Mobile Display Co., Ltd. | Organic electroluminescent display device with improved interface between anode and luminescent organic layer |
CN103928627A (zh) * | 2013-01-11 | 2014-07-16 | 海洋王照明科技股份有限公司 | 一种修饰氧化铟锡阳极及其制备方法和有机电致发光器件 |
WO2014137068A1 (ko) * | 2013-03-07 | 2014-09-12 | 한국생산기술연구원 | 쉐도우 마스크를 이용한 유기 발광 소자 제조 방법 및 상기 방법으로 제조된 유기 발광 소자 |
CN111279504A (zh) * | 2017-10-31 | 2020-06-12 | 弗莱克英纳宝有限公司 | 用于有机薄膜晶体管的源极-漏极导体 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100635055B1 (ko) * | 2003-11-29 | 2006-10-16 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그의 제조 방법 |
US8853070B2 (en) | 2012-04-13 | 2014-10-07 | Oti Lumionics Inc. | Functionalization of a substrate |
US9698386B2 (en) | 2012-04-13 | 2017-07-04 | Oti Lumionics Inc. | Functionalization of a substrate |
-
1999
- 1999-12-18 KR KR1019990058903A patent/KR100340411B1/ko not_active IP Right Cessation
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030063974A (ko) * | 2002-01-25 | 2003-07-31 | 주식회사 컴텍스 | 유기 전계발광 디스플레이용 투명전극의 제조방법 |
KR100611754B1 (ko) * | 2004-05-19 | 2006-08-10 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자의 제조 방법 |
US7531834B2 (en) | 2004-11-11 | 2009-05-12 | Samsung Mobile Display Co., Ltd. | Organic electroluminescent display device with improved interface between anode and luminescent organic layer |
US20070046183A1 (en) * | 2005-08-29 | 2007-03-01 | Kwok Hoi S | Metallic anode treated by carbon tetrafluoride plasma for organic light emitting device |
US9166197B2 (en) * | 2005-08-29 | 2015-10-20 | The Hong Kong University Of Science And Technology | Metallic anode treated by carbon tetrafluoride plasma for organic light emitting device |
WO2007081120A1 (en) * | 2006-01-09 | 2007-07-19 | Lg Chem, Ltd. | Organic light emitting device having surface-treated bottom electrode |
KR100847220B1 (ko) * | 2006-01-09 | 2008-07-17 | 주식회사 엘지화학 | 표면 처리된 하부전극을 구비한 유기발광소자 |
US8058796B2 (en) | 2006-01-09 | 2011-11-15 | Lg Chem, Ltd. | Organic light emitting device having surface-treated bottom electrode |
KR100765728B1 (ko) * | 2006-03-31 | 2007-10-11 | 성균관대학교산학협력단 | 산소 플라즈마 및 열처리를 이용한 ito 표면처리방법 및이 방법에 의해 제조된 oled 소자 |
CN103928627A (zh) * | 2013-01-11 | 2014-07-16 | 海洋王照明科技股份有限公司 | 一种修饰氧化铟锡阳极及其制备方法和有机电致发光器件 |
WO2014137068A1 (ko) * | 2013-03-07 | 2014-09-12 | 한국생산기술연구원 | 쉐도우 마스크를 이용한 유기 발광 소자 제조 방법 및 상기 방법으로 제조된 유기 발광 소자 |
KR20140110255A (ko) * | 2013-03-07 | 2014-09-17 | 한국생산기술연구원 | Shadow mask를 이용한 유기 발광 소자 제조 방법 및 상기 방법으로 제조된 유기 발광 소자. |
US9640776B2 (en) | 2013-03-07 | 2017-05-02 | Korea Institute Of Industrial Technology | Organic light emitting device manufacturing method using shadow mask and organic light emitting device manufactured thereby |
CN111279504A (zh) * | 2017-10-31 | 2020-06-12 | 弗莱克英纳宝有限公司 | 用于有机薄膜晶体管的源极-漏极导体 |
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