KR20010030150A - 감광성 기재, 이를 사용한 레지스트 패턴의 형성 방법 및포지티브형 레지스트 조성물 - Google Patents

감광성 기재, 이를 사용한 레지스트 패턴의 형성 방법 및포지티브형 레지스트 조성물 Download PDF

Info

Publication number
KR20010030150A
KR20010030150A KR1020000050454A KR20000050454A KR20010030150A KR 20010030150 A KR20010030150 A KR 20010030150A KR 1020000050454 A KR1020000050454 A KR 1020000050454A KR 20000050454 A KR20000050454 A KR 20000050454A KR 20010030150 A KR20010030150 A KR 20010030150A
Authority
KR
South Korea
Prior art keywords
group
acid
dissolution inhibiting
acid dissociable
substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1020000050454A
Other languages
English (en)
Korean (ko)
Other versions
KR100404003B1 (enrdf_load_stackoverflow
Inventor
오꾸보와끼
사또가즈후미
니따가즈유끼
Original Assignee
나까네 히사시
도오꾜오까고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 나까네 히사시, 도오꾜오까고오교 가부시끼가이샤 filed Critical 나까네 히사시
Publication of KR20010030150A publication Critical patent/KR20010030150A/ko
Application granted granted Critical
Publication of KR100404003B1 publication Critical patent/KR100404003B1/ko
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020000050454A 1999-08-31 2000-08-29 감광성 기재, 이를 사용한 레지스트 패턴의 형성 방법 및포지티브형 레지스트 조성물 Granted KR20010030150A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP99-245684 1999-08-31
JP24568499 1999-08-31

Publications (2)

Publication Number Publication Date
KR20010030150A true KR20010030150A (ko) 2001-04-16
KR100404003B1 KR100404003B1 (enrdf_load_stackoverflow) 2003-11-05

Family

ID=37527154

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000050454A Granted KR20010030150A (ko) 1999-08-31 2000-08-29 감광성 기재, 이를 사용한 레지스트 패턴의 형성 방법 및포지티브형 레지스트 조성물

Country Status (1)

Country Link
KR (1) KR20010030150A (enrdf_load_stackoverflow)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114030A (ja) * 1981-12-28 1983-07-07 Fujitsu Ltd ポジ型レジスト材料
JPH05313372A (ja) * 1992-05-14 1993-11-26 Hitachi Ltd パタン形成材料
JPH06130670A (ja) * 1992-10-21 1994-05-13 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP3553213B2 (ja) * 1995-06-20 2004-08-11 東京応化工業株式会社 ポジ型レジスト組成物
KR100236840B1 (ko) * 1997-10-16 2000-01-15 유현식 가교형 광산발생제를 함유하는 포토레지스트 조성물

Also Published As

Publication number Publication date
KR100404003B1 (enrdf_load_stackoverflow) 2003-11-05

Similar Documents

Publication Publication Date Title
JP4510759B2 (ja) 化学増幅型ポジ型ホトレジスト組成物の製造方法及びレジストパターン形成方法
KR100365461B1 (ko) 방사선감응성수지조성물
US6936400B2 (en) Negative resist composition
JP4494061B2 (ja) ポジ型レジスト組成物
JP4727092B2 (ja) 化学増幅型レジスト組成物
KR100420020B1 (ko) 포지티브형 레지스트 조성물, 및 이에 사용되는 산해리성기 함유 모노머
US20130337380A1 (en) Positive photosensitive material
JP3998901B2 (ja) 感光性基材、それを用いたレジストパターンの形成方法およびポジ型レジスト組成物
US6638684B2 (en) Photosensitive laminate, process for forming resist pattern using same and positive resist composition
JP2008102277A (ja) 熱リソグラフィー用化学増幅型ポジ型レジスト組成物およびレジストパターン形成方法
JP4434570B2 (ja) 樹脂の製造方法
WO2004104703A1 (ja) 化学増幅型ポジ型ホトレジスト組成物及びレジストパターン形成方法
CN1853140B (zh) 正型抗蚀剂组合物和形成抗蚀图案的方法
KR20010030150A (ko) 감광성 기재, 이를 사용한 레지스트 패턴의 형성 방법 및포지티브형 레지스트 조성물
JP2002091001A (ja) レジスト組成物及びそれに用いるレジスト用基材樹脂
US7629105B2 (en) Positive photoresist composition and method of forming resist pattern
JP4494060B2 (ja) ポジ型レジスト組成物
JPH1130856A (ja) 感放射線性樹脂組成物
KR100606630B1 (ko) 포지티브형 포토레지스트 조성물 및 이를 사용한 레지스트패턴의 형성방법
JP2008096937A (ja) 熱リソグラフィー用下層膜形成用材料、レジスト積層体およびレジストパターン形成方法
WO2007102425A1 (ja) ポジ型レジスト組成物およびレジストパターン形成方法
JP5230400B2 (ja) 樹脂の製造方法
JP2008310026A (ja) 熱リソグラフィーによるレジストパターン形成方法
JPH11258804A (ja) ポジ型感光性組成物
KR20070018033A (ko) 포토레지스트 조성물 및 레지스트 패턴 형성방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

G170 Re-publication after modification of scope of protection [patent]
PG1701 Publication of correction

St.27 status event code: A-5-5-P10-P19-oth-PG1701

Patent document republication publication date: 20040512

Republication note text: Request for Correction Notice

Gazette number: 1004040030000

Gazette reference publication date: 20031105

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20121002

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20131001

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20141007

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20150918

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

FPAY Annual fee payment

Payment date: 20160921

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20170919

Year of fee payment: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

FPAY Annual fee payment

Payment date: 20180918

Year of fee payment: 16

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20191022

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20191022