KR20000076305A - 티탄이 포함된 복합재의 연마용 조성물 및 연마 방법 - Google Patents

티탄이 포함된 복합재의 연마용 조성물 및 연마 방법 Download PDF

Info

Publication number
KR20000076305A
KR20000076305A KR1019997008406A KR19997008406A KR20000076305A KR 20000076305 A KR20000076305 A KR 20000076305A KR 1019997008406 A KR1019997008406 A KR 1019997008406A KR 19997008406 A KR19997008406 A KR 19997008406A KR 20000076305 A KR20000076305 A KR 20000076305A
Authority
KR
South Korea
Prior art keywords
compound
composition
acid
hydroxyl group
alpha position
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019997008406A
Other languages
English (en)
Korean (ko)
Inventor
지운-팡 왕
아난타 알. 세튜라만
리 메보른 쿡
Original Assignee
콘라드 에스. 캐딩
로델, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 콘라드 에스. 캐딩, 로델, 인코포레이티드 filed Critical 콘라드 에스. 캐딩
Publication of KR20000076305A publication Critical patent/KR20000076305A/ko
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1019997008406A 1997-03-17 1998-03-16 티탄이 포함된 복합재의 연마용 조성물 및 연마 방법 Ceased KR20000076305A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/819,236 US5756398A (en) 1997-03-17 1997-03-17 Composition and method for polishing a composite comprising titanium
US8/819,236 1997-03-17

Publications (1)

Publication Number Publication Date
KR20000076305A true KR20000076305A (ko) 2000-12-26

Family

ID=25227570

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019997008406A Ceased KR20000076305A (ko) 1997-03-17 1998-03-16 티탄이 포함된 복합재의 연마용 조성물 및 연마 방법

Country Status (6)

Country Link
US (1) US5756398A (https=)
EP (1) EP0985059B1 (https=)
JP (1) JP2001516383A (https=)
KR (1) KR20000076305A (https=)
DE (1) DE69809228T2 (https=)
WO (1) WO1998041671A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180122326A (ko) * 2016-03-04 2018-11-12 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 반도체 기판을 화학 기계적 연마하는 방법

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US6132637A (en) 1996-09-27 2000-10-17 Rodel Holdings, Inc. Composition and method for polishing a composite of silica and silicon nitride
US6204169B1 (en) * 1997-03-24 2001-03-20 Motorola Inc. Processing for polishing dissimilar conductive layers in a semiconductor device
US5922091A (en) * 1997-05-16 1999-07-13 National Science Council Of Republic Of China Chemical mechanical polishing slurry for metallic thin film
US6241586B1 (en) * 1998-10-06 2001-06-05 Rodel Holdings Inc. CMP polishing slurry dewatering and reconstitution
US6572449B2 (en) 1998-10-06 2003-06-03 Rodel Holdings, Inc. Dewatered CMP polishing compositions and methods for using same
US6245690B1 (en) * 1998-11-04 2001-06-12 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
WO2001019935A1 (en) * 1999-09-15 2001-03-22 Rodel Holdings, Inc. Slurry for forming insoluble silicate during chemical-mechanical polishing
US6435944B1 (en) 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6194366B1 (en) 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
US6451697B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
US6447375B2 (en) 2000-04-19 2002-09-10 Rodel Holdings Inc. Polishing method using a reconstituted dry particulate polishing composition
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6858540B2 (en) 2000-05-11 2005-02-22 Applied Materials, Inc. Selective removal of tantalum-containing barrier layer during metal CMP
JP3837277B2 (ja) 2000-06-30 2006-10-25 株式会社東芝 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
US6653242B1 (en) 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
US6872329B2 (en) 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
US6569349B1 (en) 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US6709316B1 (en) 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
US20020068454A1 (en) * 2000-12-01 2002-06-06 Applied Materials, Inc. Method and composition for the removal of residual materials during substrate planarization
US7012025B2 (en) 2001-01-05 2006-03-14 Applied Materials Inc. Tantalum removal during chemical mechanical polishing
US6676718B2 (en) 2001-01-12 2004-01-13 Rodel Holdings, Inc. Polishing of semiconductor substrates
US7104869B2 (en) 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US7008554B2 (en) 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US6821881B2 (en) 2001-07-25 2004-11-23 Applied Materials, Inc. Method for chemical mechanical polishing of semiconductor substrates
JP2003100672A (ja) * 2001-09-21 2003-04-04 Rodel Nitta Co 研磨用スラリー
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
KR20030035637A (ko) * 2001-11-01 2003-05-09 제일모직주식회사 구리배선 연마용 ｃｍｐ 슬러리
US20030209523A1 (en) * 2002-05-09 2003-11-13 Applied Materials, Inc. Planarization by chemical polishing for ULSI applications
US7037174B2 (en) 2002-10-03 2006-05-02 Applied Materials, Inc. Methods for reducing delamination during chemical mechanical polishing
WO2004073926A1 (en) * 2003-02-18 2004-09-02 Parker-Hannifin Corporation Polishing article for electro-chemical mechanical polishing
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US7210988B2 (en) * 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
WO2007094869A2 (en) * 2005-10-31 2007-08-23 Applied Materials, Inc. Electrochemical method for ecmp polishing pad conditioning
US20070158207A1 (en) * 2006-01-06 2007-07-12 Applied Materials, Inc. Methods for electrochemical processing with pre-biased cells
US20070227902A1 (en) * 2006-03-29 2007-10-04 Applied Materials, Inc. Removal profile tuning by adjusting conditioning sweep profile on a conductive pad
EP4484510A1 (en) 2023-06-27 2025-01-01 Acondicionamiento Tarrasense A method and a composition of polishing a titanium or titanium alloy workpiece

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954142A (en) * 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
CA2027029A1 (en) * 1989-10-13 1991-04-14 Christopher B. Guay Oral compositions containing monoperoxy acids
JPH03242352A (ja) * 1990-02-20 1991-10-29 Nippon Sheet Glass Co Ltd 硬脆材料の洗浄方法
US5244534A (en) * 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5382272A (en) * 1993-09-03 1995-01-17 Rodel, Inc. Activated polishing compositions
WO1995024054A1 (en) * 1994-03-01 1995-09-08 Rodel, Inc. Improved compositions and methods for polishing
US6046110A (en) * 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180122326A (ko) * 2016-03-04 2018-11-12 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 반도체 기판을 화학 기계적 연마하는 방법

Also Published As

Publication number Publication date
US5756398A (en) 1998-05-26
JP2001516383A (ja) 2001-09-25
EP0985059B1 (en) 2002-11-06
WO1998041671A1 (en) 1998-09-24
EP0985059A4 (en) 2001-05-16
EP0985059A1 (en) 2000-03-15
DE69809228T2 (de) 2003-07-10
DE69809228D1 (de) 2002-12-12

Similar Documents

Publication Publication Date Title
KR20000076305A (ko) 티탄이 포함된 복합재의 연마용 조성물 및 연마 방법
US5770103A (en) Composition and method for polishing a composite comprising titanium
KR100745447B1 (ko) 금속의화학기계적연마에유용한조성물및슬러리
EP0706582B1 (en) Improved compositions and methods for polishing
US5980775A (en) Composition and slurry useful for metal CMP
US6312486B1 (en) Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto
US20080315153A1 (en) Polishing fluids and methods for cmp
TW200413489A (en) Process for reducing dishing and erosion during chemical mechanical planarization
US6776696B2 (en) Continuous chemical mechanical polishing process for polishing multiple conductive and non-conductive layers on semiconductor wafers
US6930054B2 (en) Slurry composition for use in chemical mechanical polishing of metal wiring
KR100756469B1 (ko) 연마 조성물
WO2008137053A1 (en) Cmp compositions containing a soluble peroxometalate complex and methods of use thereof
JPH10279928A (ja) 研磨速度抑制化合物
KR20250060704A (ko) 금속막 연마를 위한 화학적 기계적 연마 슬러리 조성물 및 이를 이용한 연마 방법

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 19990916

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20030312

Comment text: Request for Examination of Application

N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20041026

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20041222

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20050331

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20041222

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I