KR20000062616A - 비휘발성 메모리에 데이터를 저장하는 방법 - Google Patents
비휘발성 메모리에 데이터를 저장하는 방법 Download PDFInfo
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- KR20000062616A KR20000062616A KR1020000009012A KR20000009012A KR20000062616A KR 20000062616 A KR20000062616 A KR 20000062616A KR 1020000009012 A KR1020000009012 A KR 1020000009012A KR 20000009012 A KR20000009012 A KR 20000009012A KR 20000062616 A KR20000062616 A KR 20000062616A
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
- G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/14—Error detection or correction of the data by redundancy in operation
- G06F11/1402—Saving, restoring, recovering or retrying
- G06F11/1415—Saving, restoring, recovering or retrying at system level
- G06F11/1433—Saving, restoring, recovering or retrying at system level during software upgrading
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Computer Security & Cryptography (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
Abstract
Description
Claims (4)
- 소거가능하지만 중복기록할 수 없는 비휘발성 메모리(106, 108, 110)에 데이터를 저장하기 위한 방법에 있어서,(가) 상기 데이터에 대해 휘발성 메모리에 위치를 정의하는(204) 단계와,(나) 상기 데이터가 변경될 때, 상기 휘발성 메모리에 상기 데이터를 중복기록하고, 상기 비휘발성 메모리의 제 1 소거가능한 부분에 새 버전의 데이터를 기록하는 단계와,(다) 상기 비휘발성 메모리의 상기 제 1 부분이 거의 풀(full)인지의 여부를 판정하는(222) 단계와,(라) 상기 비휘발성 메모리의 상기 제 1 부분이 거의 풀이라고 판정할 때, 상기 휘발성 메모리로부터 상기 비휘발성 메모리의 제 2 소거가능한 부분으로 복사시키는 단계를 포함하는 비휘발성 메모리에 데이터를 저장하는 방법.
- 제 1 항에 있어서,단계(가) 이후에,(가 1) 휘발성 메모리에서 상기 데이터에 디폴트값을 할당하는(204) 단계와,(가 2) 상기 비휘발성 메모리로부터 상기 데이터를 판독하는(216) 단계와,(가 3) 상기 비휘발성 메모리로부터 판독된 값을 가진 상기 휘발성 메모리에 상기 값을 중복기록하는(216) 단계를 더 포함하는 비휘발성 메모리에 데이터를 저장하는 방법.
- 제 1 항에 있어서,단계(가) 이후에,(가 1) 상기 비휘발성 메모리의 두 소거가능한 부분이 데이터를 포함할 수 있는 지의 여부를 판정하는(210) 단계와,(가 2) 단계(가 1)에서 식별된 상기 두 소거가능한 부분들중에 하나가 먼저 기록되었음을 판정하고(214), 상기 부분을 상기 단계(나)에서 사용하기 위한 제 1 소거가능한 부분으로서 지명하는 단계를 더 포함하는 비휘발성 메모리에 데이터를 저장하는 방법.
- 제 1 항에 있어서,단계(나)는,(나 1) 상기 비휘발성 메모리의 상기 제 1 소거가능한 부분에서의 메모리 위치를 식별 위치로서 지명하는 단계와,(나 2) 상기 식별 위치 후에, 상기 비휘발성 메모리의 상기 제 1 소거가능한 부분에 상기 데이터를 기록하는 단계와,(나 3) 상기 식별 위치 뒤에, 상기 데이터에 대응하는 식별을 기록하는 단계를 더 포함하는 비휘발성 메모리에 데이터를 저장하는 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/258,582 | 1999-02-26 | ||
US9/258,582 | 1999-02-26 | ||
US09/258,582 US6104638A (en) | 1999-02-26 | 1999-02-26 | Use of erasable non-volatile memory for storage of changing information |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000062616A true KR20000062616A (ko) | 2000-10-25 |
KR100377301B1 KR100377301B1 (ko) | 2003-03-26 |
Family
ID=22981204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2000-0009012A KR100377301B1 (ko) | 1999-02-26 | 2000-02-24 | 비휘발성 메모리에 데이터를 저장하는 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6104638A (ko) |
EP (1) | EP1031929A3 (ko) |
JP (1) | JP2000250820A (ko) |
KR (1) | KR100377301B1 (ko) |
TW (1) | TW446950B (ko) |
Cited By (1)
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KR100490603B1 (ko) * | 2002-12-06 | 2005-05-27 | (주) 라모스테크놀러지 | 플래시 메모리 동작 제어 방법 및 장치 |
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JP2001331327A (ja) * | 2000-05-24 | 2001-11-30 | Matsushita Electric Ind Co Ltd | 電子機器 |
JP2001356925A (ja) * | 2000-06-12 | 2001-12-26 | Nec Corp | 携帯電話機 |
US6658438B1 (en) * | 2000-08-14 | 2003-12-02 | Matrix Semiconductor, Inc. | Method for deleting stored digital data from write-once memory device |
US20020048203A1 (en) * | 2000-10-19 | 2002-04-25 | Findling Patrick M. | Extending total write cycles of non-volatile memory for rolling codes |
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KR100365725B1 (ko) * | 2000-12-27 | 2002-12-26 | 한국전자통신연구원 | 플래시 메모리를 이용한 파일 시스템에서 등급별 지움정책 및 오류 복구 방법 |
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-
1999
- 1999-02-26 US US09/258,582 patent/US6104638A/en not_active Expired - Lifetime
- 1999-10-28 TW TW088118696A patent/TW446950B/zh not_active IP Right Cessation
-
2000
- 2000-02-18 JP JP2000041485A patent/JP2000250820A/ja active Pending
- 2000-02-24 KR KR10-2000-0009012A patent/KR100377301B1/ko active IP Right Grant
- 2000-02-25 EP EP00301520A patent/EP1031929A3/en not_active Ceased
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100490603B1 (ko) * | 2002-12-06 | 2005-05-27 | (주) 라모스테크놀러지 | 플래시 메모리 동작 제어 방법 및 장치 |
Also Published As
Publication number | Publication date |
---|---|
TW446950B (en) | 2001-07-21 |
US6104638A (en) | 2000-08-15 |
JP2000250820A (ja) | 2000-09-14 |
EP1031929A3 (en) | 2002-10-02 |
KR100377301B1 (ko) | 2003-03-26 |
EP1031929A2 (en) | 2000-08-30 |
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