KR20000021299A - Apparatus for cooling chamber of dry-etching device - Google Patents

Apparatus for cooling chamber of dry-etching device Download PDF

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Publication number
KR20000021299A
KR20000021299A KR1019980040315A KR19980040315A KR20000021299A KR 20000021299 A KR20000021299 A KR 20000021299A KR 1019980040315 A KR1019980040315 A KR 1019980040315A KR 19980040315 A KR19980040315 A KR 19980040315A KR 20000021299 A KR20000021299 A KR 20000021299A
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cooling
valve
chamber
line
cooling line
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KR1019980040315A
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Korean (ko)
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박해균
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윤종용
삼성전자 주식회사
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Priority to KR1019980040315A priority Critical patent/KR20000021299A/en
Publication of KR20000021299A publication Critical patent/KR20000021299A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: An apparatus for cooling a chamber of a dry-etching device is to effectively detect the leakage area in the cooling apparatus. CONSTITUTION: An apparatus for cooling a chamber of a dry-etching device comprises a plurality of valves positioned in a pipeline connected from a He gas resource(106) to an anode(108), a first cooling line(104) connected in series to a unit pressure controller(100) and a gauge(102) for monitoring a pressure of the He gas in the pipeline, a second cooling line(112) connected to a pump ballast(110) through a valve, and bypass line(118) connected in series to a valve, a second unit pressure controller(114) and a gasket(116). An optional auto valve(120) is connected to an auto valve(120) of a bypass line to prevent a polymer from being laminated in the chamber.

Description

건식식각 장비의 챔버 냉각 장치Chamber cooling unit of dry etching equipment

본 발명은 반도체 소자의 제조공정에 사용되는 장비에 관한 것으로, 더욱 상세하게는 건식식각 장비의 챔버 냉각장치에 관한 것이다.The present invention relates to equipment used in the manufacturing process of semiconductor devices, and more particularly to a chamber cooling apparatus of dry etching equipment.

현재 건식식각 장비에서 챔버 배면(Chamber back side)에 대한 냉각 방식은 헬륨(He)을 이용한 클로우즈 루프(closed loop) 방식이다. 이러한 시스템의 단점은 헬륨(He)이 플루(flow)될 때, 실질적으로 챔버 배면(chamber backside)에 플루되는 양과 챔버 배면에서 누설(leak)되어 소모되는 양, 그리고 펌프(pump)로 빠져나가는 양을 알 수 없다는 것이다. 모든 설비가 항상 일정한 비율로 펌프 및 챔버 배면으로 플루되지 않기 때문에, 이러한 차이는 미세 패턴을 식각하는 공정에 영향을 줄 수 있다. 예를 들면, 10sccm의 헬륨을 플루했을 때, 어느 설비가 챔버배면: 펌프에 9:1의 양으로 플루되었다면, 또 다른 어느 설비는 9.5: 0.5의 상태로 플루될 수 있기 때문이다. 이러한 변화는 챔버내의 아노오드(anode) 및 척킹 포스(chucking force)등의 미세한 변화에 주로 영향을 받게 된다.In the current dry etching equipment, the cooling method for the chamber back side is a closed loop method using helium (He). Disadvantages of such a system are that when helium flows, substantially the amount of influenza in the chamber backside, the amount of leaked and consumed in the chamber back, and the amount of pumping out of the pump. Is not known. This difference can affect the process of etching fine patterns, since not all installations are always flushed to the pump and chamber back at a constant rate. For example, when 10 sccm of helium was infused, if one equipment was influenced in the chamber back: pump in an amount of 9: 1, another equipment could be influenza in a state of 9.5: 0.5. This change is mainly affected by minute changes in the chamber, such as anode and chucking force.

도 1은 종래기술에 의한 건식식각 장비의 챔버 냉각 장치를 설명하기 위해 도시한 개략도이다.1 is a schematic diagram illustrating a chamber cooling apparatus of a dry etching apparatus according to the prior art.

도 1을 참조하면, 기존의 클로우즈 루프(closed loop) 방식을 갖는 냉각장치에서는, 헬륨의 설정값(Torr)을 정했을 때, 단위압력컨트롤러(UPC: Unit Pressure Controller, 51)가 헬륨압력게이지(53)에서 기 설정된 값에 도달하기 까지 헬륨을 플루시킨다. 이때, 아노오드(anode, 55)에 문제가 있거나, 0.013㎜과 같이 특정 구경을 갖는 개스캣(57) 구멍에 변화가 있을 때 실제로 어느 지점에 문제가 발생했는지 모니터링(monitoring)하기 쉽지 않다. 또한, 아노오드(55)에 헬륨의 누설이 있어도 개스캣(57) 구멍이 작아진다면 이를 탐지(detecting)하기가 쉽지 않아, 이로 인해 공정에 냉각 불량(burning)과 같은 문제를 야기할 수 있다. 도면에서 참조부호 59는 자동밸브(auto valve)를, 61은 수동밸브(manual valve)를 각각 나타내며, 참조부호 63은 헬륨공급원(69)에서 아노오드(55)로 연결되는 제1 냉각라인을, 65는 아노오드(55)에 인접한 제1 냉각라인에서 펌프안정기(pump ballast, 71)로 연결되는 제2 냉각라인을, 67은 상기 제2 냉각라인과 병렬로 연결된 바이패스 라인(by-pass line)을 각각 나타낸다.Referring to FIG. 1, in a conventional cooling apparatus having a closed loop system, when a set value Torr of helium is determined, a unit pressure controller (UPC) 51 is a helium pressure gauge 53. ) Until he reaches the preset value. At this time, when there is a problem with the anode 55 or when there is a change in the hole of the gasket 57 having a specific aperture such as 0.013 mm, it is not easy to monitor where the problem actually occurs. In addition, even if there is a leak of helium in the anode 55, if the gasket 57 becomes small, it is not easy to detect it, which may cause problems such as burning in the process. In the drawings, reference numeral 59 denotes an auto valve, 61 denotes a manual valve, and reference numeral 63 denotes a first cooling line connected from the helium source 69 to the anode 55, 65 is a second cooling line connected to the pump ballast 71 in the first cooling line adjacent to the anode 55, 67 is a bypass line connected in parallel with the second cooling line. ) Respectively.

본 발명이 이루고자 하는 기술적 과제는 냉각장치 내부에서 누설지점(leakage area)을 효과적으로 탐지(detection)할 수 있는 건식식각 장비의 챔버(chamber) 냉각 장치를 제공하는데 있다.SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a chamber cooling apparatus of dry etching equipment capable of effectively detecting a leak area inside a cooling apparatus.

도 1은 종래기술에 의한 건식식각 장비의 챔버 냉각 장치를 설명하기 위해 도시한 개략도이다.1 is a schematic diagram illustrating a chamber cooling apparatus of a dry etching apparatus according to the prior art.

도 2는 본 발명에 의한 건식식각 장비의 챔버 냉각 장치를 설명하기 위해 도시한 개략도이다.2 is a schematic view illustrating a chamber cooling apparatus of a dry etching apparatus according to the present invention.

상기 기술적 과제를 달성하기 위하여 본 발명은, 헬륨가스 공급원으로부터 아노오드로 연결되는 배관내에 설치된 복수개의 밸브와, 제1 단위 압력 컨트롤러(UPC) 및 상기 배관내의 헬륨가스(He gas) 압력을 모니터하는 게이지(guage)가 직렬로 연결된 제1 냉각라인과, 상기 제1 냉각라인에서 아노오드와 가장 가까운 곳의 배관 일단에 연결되어 밸브(valve)를 걸쳐 펌프 안정기(Pump Ballast)로 연결되는 제2 냉각라인과, 상기 제2 냉각라인과 병렬로 연결된 배관에 밸브와 제2 단위 압력 컨트롤러(UPC) 및 가스캣이 직렬연결된 바이패스(by-pass)라인을 구비하는 것을 특징으로 하는 건식식각 장비의 챔버 냉각 장치를 제공한다.In order to achieve the above technical problem, the present invention provides a plurality of valves installed in a pipe connected from a helium gas source to an anode, a first unit pressure controller (UPC) and a helium gas (He gas) pressure in the pipe. A second cooling line connected to a first cooling line in which a gauge is connected in series, and one end of a pipe closest to the anode in the first cooling line, and connected to a pump ballast through a valve. And a bypass line in which a valve, a second unit pressure controller (UPC), and a gas kat are connected in series to a line and a pipe connected in parallel with the second cooling line. Provide a cooling device.

본 발명의 바람직한 실시예에 의하면, 상기 바이패스 라인에 구성된 밸브는 상기 제1 냉각라인에 설치된 밸브중 어느 하나와 연결된 것이 적합하다.According to a preferred embodiment of the present invention, the valve configured in the bypass line is suitably connected to any one of the valves installed in the first cooling line.

본 발명에 따르면, 건식식각 장비의 챔버 냉각 장치에서 헬륨이 어느곳에서 누설되는지를 효과적으로 탐지하여 이를 보완함으로써 냉각장치에서 발생할 수 있는 공정변수를 영향을 줄여 공정의 안정도를 향상시킬 수 있다.According to the present invention, by effectively detecting and complementing where helium leaks in the chamber cooling apparatus of the dry etching equipment, the stability of the process may be improved by reducing the influence of process variables that may occur in the cooling apparatus.

이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명에 따른 건식식각 장비의 챔버 냉각 장치를 설명하기 위해 도시한 개략도이다.Figure 2 is a schematic diagram illustrating a chamber cooling apparatus of the dry etching equipment according to the present invention.

도 2를 참조하면, 본 발명에 의한 건식식각 장비의 챔버 냉각 장치는 헬륨가스 공급원(106)으로부터 아노오드(anode, 108)로 연결되는 배관내에 설치된 복수개의 밸브와, 제1 단위 압력 컨트롤러(UPC, 100) 및 상기 배관내의 헬륨가스(He gas) 압력을 모니터하는 게이지(guage, 102)가 직렬로 연결된 제1 냉각라인(104)과, 상기 제1 냉각라인(104)에서 아노오드(108)와 가장 가까운 곳의 배관의 일단(A)에 연결되어 밸브(valve)를 걸쳐 펌프 안정기(Pump Ballast, 110)로 연결되는 제2 냉각라인(112)과, 상기 제2 냉각라인(112)과 병렬로 연결된 배관에 밸브와 제2 단위 압력 컨트롤러(UPC, 114) 및 가스캣(116)이 직렬연결된 바이패스(by-pass)라인(118)으로 이루어진다. 여기서 참조부호 120은 자동 밸브(auto valve)를 가리키고, 122는 수동밸브(manual valve)를 가리킨다. 그리고 본발명에 의한 변화가 표시된 영역(B)에서 도시되었듯이 제1 냉각라인(104)의 임의 자동밸브(120)은 바이패스 라인의 자동밸브(120)와 'T'자로 물려 서로 연결된다. 이것은 챔버내의 폴리머(polymer)가 적층되는 것을 방지하기 위함이다. 따라서 아노오드(108)를 중심으로 헬륨까지가 챔버 배면에 플루되기 전후의 헬륨의 제어정도를 제1 단위 압력 컨트롤러(100) 및 제2 단위 압력 컨트롤러(114)에서 모니터링함으로써 헬륨의 누설지점을 효과적으로 탐지하여 이를 보완함으로써 공정의 안정도를 개선할 수 있다.2, the chamber cooling apparatus of the dry etching apparatus according to the present invention includes a plurality of valves installed in a pipe connected from a helium gas source 106 to an anode 108, and a first unit pressure controller UPC. 100 and a first cooling line 104 connected in series with a gauge 102 for monitoring the helium gas pressure in the pipe, and an anode 108 in the first cooling line 104. A second cooling line 112 connected to one end A of the pipe closest to the pump and connected to a pump ballast 110 through a valve, and parallel to the second cooling line 112. The bypass line 118 includes a valve, a second unit pressure controller (UPC) 114, and a gas cat 116 connected in series with each other. Reference numeral 120 denotes an auto valve and 122 denotes a manual valve. And as shown in the region (B) in which the change according to the present invention is displayed, any automatic valve 120 of the first cooling line 104 is connected to the automatic valve 120 of the bypass line by 'T'. This is to prevent stacking of polymers in the chamber. Therefore, the first unit pressure controller 100 and the second unit pressure controller 114 monitor the degree of control of helium before and after the helium is infiltrated into the chamber, centering on the anode 108, thereby effectively detecting the leak point of the helium. Detection and supplementation can improve process stability.

본 발명은 상기한 실시예에 한정되지 않으며, 본 발명이 속한 기술적 사상 내에서 당 분야의 통상의 지식을 가진 자에 의해 많은 변형이 가능함이 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications can be made by those skilled in the art within the technical spirit to which the present invention belongs.

따라서, 상술한 본 발명에 따르면, 건식식각 장비의 챔버 냉각 장치에서 헬륨이 어느곳에서 누설되는지를 효과적으로 탐지하여 이를 보완함으로써 냉각장치에서 발생할 수 있는 공정변수를 영향을 줄여 공정의 안정도를 향상시킬 수 있다.Accordingly, according to the present invention described above, by effectively detecting and supplementing where helium leaks in the chamber cooling apparatus of the dry etching equipment, it is possible to improve the stability of the process by reducing the influence of process variables that may occur in the cooling apparatus. have.

Claims (2)

헬륨 공급원으로부터 아노오드로 연결되는 배관내에 설치된 복수개의 밸브와, 제1 단위 압력 컨트롤러(UPC) 및 헬륨가스(He gas) 압력을 모니터하는 게이지(guage)가 직렬로 연결된 제1 냉각라인과,A first cooling line having a plurality of valves installed in a pipe connected from the helium source to the anode, a first unit pressure controller (UPC) and a gauge for monitoring helium gas (He gas) pressure in series; 상기 제1 냉각라인에서 아노오드와 가장 가까운 곳의 배관 일단에 연결되어 밸브(valve)를 걸쳐 펌프 안정기(Pump Ballast)로 연결되는 제2 냉각라인과,A second cooling line connected to one end of a pipe closest to the anode in the first cooling line and connected to a pump ballast through a valve; 상기 제2 냉각라인과 병렬로 연결된 배관에 밸브와 제2 단위 압력 컨트롤러(UPC) 및 가스캣이 직렬연결된 바이패스(by-pass)라인을 구비하는 것을 특징으로 하는 건식식각 장비의 챔버 냉각 장치.And a bypass line in which a valve, a second unit pressure controller (UPC), and a gas kat are connected in series to a pipe connected in parallel with the second cooling line. 제1항에 있어서, 상기 바이패스 라인에 구성된 밸브는 상기 제1 냉각라인에 설치된 밸브중 어느 하나와 연결된 것을 특징으로 하는 건식식각 장비의 챔버 냉각 장치.The chamber cooling apparatus of claim 1, wherein the valve configured in the bypass line is connected to any one of the valves installed in the first cooling line.
KR1019980040315A 1998-09-28 1998-09-28 Apparatus for cooling chamber of dry-etching device KR20000021299A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020032173A (en) * 2000-10-26 2002-05-03 윤종용 Cooling gas supply apparatus for wafer cooling

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020032173A (en) * 2000-10-26 2002-05-03 윤종용 Cooling gas supply apparatus for wafer cooling

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