KR20000015813U - Exhaust gas recycle apparatus for semiconductor wafer depositor - Google Patents
Exhaust gas recycle apparatus for semiconductor wafer depositor Download PDFInfo
- Publication number
- KR20000015813U KR20000015813U KR2019990000491U KR19990000491U KR20000015813U KR 20000015813 U KR20000015813 U KR 20000015813U KR 2019990000491 U KR2019990000491 U KR 2019990000491U KR 19990000491 U KR19990000491 U KR 19990000491U KR 20000015813 U KR20000015813 U KR 20000015813U
- Authority
- KR
- South Korea
- Prior art keywords
- exhaust
- gas
- injection pipe
- semiconductor wafer
- exhaust gas
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 48
- 238000002347 injection Methods 0.000 claims abstract description 23
- 239000007924 injection Substances 0.000 claims abstract description 23
- 230000008021 deposition Effects 0.000 claims abstract description 21
- 239000012159 carrier gas Substances 0.000 claims abstract description 8
- 238000004064 recycling Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000012495 reaction gas Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 17
- 238000000034 method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
본 고안은 반도체 웨이퍼 증착장비의 배기가스 재공급장치에 관한 것으로, 배기라인(17)과 가스주입관(16)을 연결하는 연결라인(20)을 설치하고, 그 연결라인(20)의 후단부에 운반가스주입관(21)을 설치하여, 배기라인(17)을 통하여 배기되는 배기가스가 연결라인(20)을 통하여 가스주입관(16)으로 재공급되도록 함으로서, 배기가스중에 포함되어 있는 미반응가스를 재활용하게되어 제조원가를 절감하는 효과가 있다.The present invention relates to an exhaust gas resupply apparatus for a semiconductor wafer deposition apparatus, and includes a connection line 20 for connecting the exhaust line 17 and the gas injection pipe 16, and a rear end of the connection line 20. The carrier gas injection pipe 21 is installed in the gas supply pipe 21 so that the exhaust gas exhausted through the exhaust line 17 is resupplied to the gas injection pipe 16 through the connection line 20. Recycling the reaction gas has the effect of reducing the manufacturing cost.
Description
반도체 웨이퍼 증착장비의 배기가스 재공급장치에 관한 것으로, 특히 배기라인을 통하여 배출되는 배기가스중에 포함되어 있는 미반응가스를 재활용할 수 있도록 하는데 적합한 반도체 웨이퍼 증착장비의 배기가스 재공급장치에 관한 것이다.The present invention relates to an exhaust gas resupply apparatus for semiconductor wafer deposition equipment, and more particularly, to an exhaust gas resupply apparatus for semiconductor wafer deposition equipment suitable for recycling unreacted gas contained in exhaust gases discharged through an exhaust line. .
종래에 일반적인 증착작업에 사용되어지는 증착장비의 한 형태가 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.One type of deposition equipment that is conventionally used for general deposition operations is illustrated in FIG. 1, which is briefly described as follows.
도시된 바와 같이, 종래의 증착장비는 내측튜브(1)의 외측에 외측튜브(2)가 설치되어 있고, 내측에 다수개의 웨이퍼(3)들을 탑재한 보트(4)가 설치되어 있으며, 그 보트(4)의 하측에는 플랜지(5)가 상기 내,외측튜브(1)(2)의 하측을 복개가능하도록 설치되어 있다.As shown, the conventional deposition equipment is provided with an outer tube (2) on the outside of the inner tube (1), a boat (4) equipped with a plurality of wafers (3) inside the boat, the boat At the lower side of (4), a flange 5 is provided to cover the lower side of the inner and outer tubes 1 and 2.
그리고, 상기 외측튜브(2)의 일측에는 가스주입관(6)이 설치되어 있고, 타측에는 배기라인(7)이 설치되어 있으며, 그 배기라인(7) 상에는 필터(8)가 설치되어 있다.In addition, a gas injection pipe 6 is provided at one side of the outer tube 2, an exhaust line 7 is provided at the other side, and a filter 8 is provided on the exhaust line 7.
상기와 같이 구성되어 있는 종래 반도체 웨이퍼 증착장비에서는 내,외측튜브(1)(2)의 내부온도가 일정온도가 되도록 유지된 상태에서 보트(4)에 웨이퍼(3)들을 탑재한다.In the conventional semiconductor wafer deposition apparatus configured as described above, the wafers 3 are mounted on the boat 4 while the internal temperature of the inner and outer tubes 1 and 2 is maintained at a constant temperature.
그런 다음, 상기와 같이 웨이퍼(3)들이 탑재되는 보트(4)를 내측튜브(1)의 내측으로 로딩함과 동시에 플랜지(5)를 이용하여 내,외측튜브(1)(2)의 하측을 복개한다.Then, as shown above, the boat 4 on which the wafers 3 are mounted is loaded into the inner tube 1, and at the same time, the lower side of the inner and outer tubes 1 and 2 is used by using the flange 5. To be surrendered.
그런 다음, 펌프(미도시)로 펌핑하여 내,외측튜브(1)(2)의 내측을 일정압력으로 유지시킨 상태에서 상기 가스주입관(6)을 통하여 내측튜브(1)의 내측으로 공정가스를 주입하면 웨이퍼(3)들의 상면에 일정두께의 증착막이 형성되는데, 이와 같이 증착막을 형성시키고난 후의 미반응가스와 반응부산물들은 필터(8)에 의하여 필터링되면서 배기라인(7)을 통하여 배출된다.Then, the process gas is pumped by a pump (not shown) to maintain the inside of the inner and outer tubes 1 and 2 at a constant pressure, and the process gas into the inner tube 1 through the gas injection pipe 6. Injecting the to form a deposition film of a predetermined thickness on the upper surface of the wafer (3), the unreacted gas and the reaction by-products after the formation of the deposition film is filtered by the filter 8 and is discharged through the exhaust line .
그러나, 상기와 같이 구성되어 있는 종래 반도체 웨이퍼 증착장비는 배기라인(7)을 통하여 배출되는 배기가스중에는 미반응가스가 다량 포함되어 있음에도 불구하고, 배기되는 배기가스 전량을 재활용하지 못함으로 인하여 원가절감을 실현하는데 한계가 있는 문제점이 있었다.However, in the conventional semiconductor wafer deposition apparatus configured as described above, despite the large amount of unreacted gas contained in the exhaust gas discharged through the exhaust line 7, the total cost of the exhaust gas is not recycled. There was a limiting problem in realizing this.
상기와 같은 문제점을 감안하여 안출한 본 고안의 목적은 배기라인을 통하여 배출되는 배기가스중에 포함되는 미반응가스를 재활용함으로서 원가절감을 이루도록 하는데 적합한 반도체 웨이퍼 증착장비의 배기가스 재공급장치를 제공함에 있다.The object of the present invention devised in view of the above problems is to provide an exhaust gas resupply apparatus for semiconductor wafer deposition equipment suitable for achieving cost reduction by recycling unreacted gas contained in exhaust gas discharged through the exhaust line. have.
도 1은 종래 반도체 웨이퍼 증착장비의 구성을 보인 종단면도.Figure 1 is a longitudinal sectional view showing the configuration of a conventional semiconductor wafer deposition equipment.
도 2는 본 고안 배기가스 재공급장치가 설치된 증착장비의 구성을 보인 종단면도.Figure 2 is a longitudinal cross-sectional view showing the configuration of the deposition equipment is installed exhaust gas resupply device of the present invention.
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
11 : 내측튜브 12 : 외측튜브11: inner tube 12: outer tube
16 : 가스주입관 17 : 배기라인16 gas inlet pipe 17 exhaust line
18 : 필터 20 : 연결라인18 filter 20 connection line
21 : 운반가스주입관 22 : 밴드 히터21: carrier gas injection pipe 22: band heater
상기와 같은 본 고안의 목적을 달성하기 위하여 내측튜브의 외측에 외측튜브가 설치되어 있고, 외측튜브의 일측에 가스주입관이 설치되어 있으며, 타측에 배기라인이 설치되어 있고, 그 배기라인 상에 필터가 설치되어 있는 반도체 웨이퍼 증착장비에 있어서, 상기 필터의 후방 배기라인과 상기 가스주입관을 연결하는 연결라인을 설치하고, 그 연결라인의 배기라인 측에는 운반가스주입관을 설치하여서 구성되는 것을 특징으로 하는 반도체 웨이퍼 증착장비의 배기가스 재공급장치가 제공된다.In order to achieve the object of the present invention as described above, the outer tube is provided on the outside of the inner tube, the gas injection pipe is installed on one side of the outer tube, the exhaust line is installed on the other side, and on the exhaust line In a semiconductor wafer deposition apparatus equipped with a filter, a connection line connecting the rear exhaust line of the filter and the gas injection pipe is installed, and the carrier gas injection pipe is installed on the exhaust line side of the connection line. An exhaust gas resupply apparatus for semiconductor wafer deposition equipment is provided.
이하, 상기와 같이 구성되는 본 고안 반도체 웨이퍼 증착장비의 배기가스 재공급장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, the exhaust gas resupply apparatus of the inventive semiconductor wafer deposition apparatus configured as described above will be described in more detail with reference to embodiments of the accompanying drawings.
도 2는 본 고안 배기사스 재공급장치가 설치된 반도체 웨이퍼 증착장비의 구성을 보인 종단면도로서, 도시된 바와 같이, 내측튜브(11)의 외측에는 외측튜브(12)가 설치되어 있고, 내측에는 웨이퍼(13)들이 탑재된 보트(14)가 설치되어 있으며, 그 보트(14)의 하측에는 내,외측튜브(11)(12)를 복개할 수 있도록 플랜지(15)가 설치되어 있다.Figure 2 is a longitudinal cross-sectional view showing the configuration of the semiconductor wafer deposition apparatus equipped with the exhaust gas resupply device of the present invention, as shown, the outer tube 12 is provided on the outer side of the inner tube 11, the wafer inside The boat 14 in which the 13 is mounted is provided, and the flange 15 is provided in the lower side of the boat 14 so that the inner and outer tubes 11 and 12 may be covered.
그리고, 상기 외측튜브(12)의 일측에는 가스주입관(16)이 설치되어 있고, 타측에는 배기라인(17)이 설치되어 있으며, 그 배기라인(17) 상에는 필터(18)가 설치되어 있는 구성은 종래와 유사하다.In addition, a gas injection pipe 16 is installed at one side of the outer tube 12, an exhaust line 17 is provided at the other side, and a filter 18 is installed on the exhaust line 17. Is similar to the prior art.
여기서, 본 고안은 상기 필터(18)의 후방 배기라인(17)과 상기 가스주입관(16)을 연결하는 연결라인(20)을 설치하고, 그 연결라인(20)의 배기라인(17)측 후방에 운반가스주입관(21)을 설치하여, 배기라인(17)을 통하여 배기되는 배기가스를 가스주입관(16)으로 재공급할 수 있도록 되어 있다.Here, the present invention is provided with a connection line 20 for connecting the rear exhaust line 17 and the gas injection pipe 16 of the filter 18, the exhaust line 17 side of the connection line 20 The carrier gas injection pipe 21 is provided at the rear, and the exhaust gas exhausted through the exhaust line 17 can be supplied to the gas injection pipe 16 again.
또한, 상기 연결라인(20)의 외측에는 밴드 히터(22)가 감겨져 있고, 양단부에는 각각 밸브(23)(23')가 설치되어 있다.In addition, a band heater 22 is wound around the outside of the connection line 20, and valves 23 and 23 'are provided at both ends thereof.
상기와 같이 구성되어 있는 본 고안의 배기가스 재공급장치가 설치된 증착장비에서 증착작업이 진행되는 동작은 종래와 유사하다.The operation in which the deposition operation is performed in the deposition apparatus equipped with the exhaust gas resupply apparatus of the present invention configured as described above is similar to the conventional art.
즉, 내,외측튜브(11)(12)의 내부온도가 일정온도로 유지된 상태에서 보트(14)에 웨이퍼(13)들을 탑재하고, 내측 튜브(11)의 내부로 로딩시키며, 이와 같은 상태에서 내,외측튜브(11)(12)을 일정압력으로 유지시킨 상태에서 가스주입관(16)을 통하여 내측튜브(11)의 내측으로 공정가스를 주입하여 웨이퍼(13)들의 상면에 일정두께의 증착막을 형성시키게 된다.That is, the wafers 13 are mounted on the boat 14 and loaded into the inner tube 11 while the internal temperature of the inner and outer tubes 11 and 12 is maintained at a constant temperature. Process gas is injected into the inner tube 11 through the gas injection tube 16 while the inner and outer tubes 11 and 12 are maintained at a constant pressure. A vapor deposition film is formed.
여기서, 본 고안은 상기 배기라인(17)을 통하여 배기되는 배기가스를 연결라인(20)을 통하여 가스주입관(16)으로 재공급하게 되는데, 이때 운반가스주입관(21)을 통하여 운반가스를 주입하여 배기가스가 가스주입관(16)으로 원할하게 재공급될 수 있도록 하고, 그와 같이 가스를 재공급하기 위한 연결라인(20)은 밴드 히터(22)에 의하여 가열되어 내부에 증착물이 증착되이 방지 된다.Here, the present invention is to supply the exhaust gas exhausted through the exhaust line 17 to the gas injection pipe 16 through the connection line 20, in which the carrier gas is injected through the carrier gas injection pipe 21 So that the exhaust gas can be smoothly resupplied to the gas injection pipe 16, and the connection line 20 for resupplying the gas is heated by the band heater 22 to deposit the deposit therein. Is prevented.
이상에서 상세히 설명한 바와 같이, 본 고안 반도체 웨이퍼 증착장비의 배기가스 재공급장치는 배기라인과 가스주입관을 연결하는 연결라인을 설치하고, 그 연결라인의 후단부에 운반가스주입관을 설치하여, 배기라인을 통하여 배기되는 배기가스가 연결라인을 통하여 가스주입관으로 재공급되도록 함으로서, 배기가스중에 포함되어 있는 미반응가스를 재활용하게되어 제조원가를 절감하는 효과가 있다.As described in detail above, the exhaust gas resupply device of the inventive semiconductor wafer deposition equipment is provided with a connection line connecting the exhaust line and the gas injection pipe, and installed a carrier gas injection pipe at the rear end of the connection line, By allowing the exhaust gas exhausted through the exhaust line to be resupplied to the gas injection pipe through the connection line, the unreacted gas contained in the exhaust gas is recycled, thereby reducing the manufacturing cost.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019990000491U KR20000015813U (en) | 1999-01-18 | 1999-01-18 | Exhaust gas recycle apparatus for semiconductor wafer depositor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019990000491U KR20000015813U (en) | 1999-01-18 | 1999-01-18 | Exhaust gas recycle apparatus for semiconductor wafer depositor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20000015813U true KR20000015813U (en) | 2000-08-16 |
Family
ID=54758255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019990000491U KR20000015813U (en) | 1999-01-18 | 1999-01-18 | Exhaust gas recycle apparatus for semiconductor wafer depositor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20000015813U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100878946B1 (en) * | 2001-12-04 | 2009-01-19 | 다이요 닛산 가부시키가이샤 | Method and apparatus for feeding gases |
-
1999
- 1999-01-18 KR KR2019990000491U patent/KR20000015813U/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100878946B1 (en) * | 2001-12-04 | 2009-01-19 | 다이요 닛산 가부시키가이샤 | Method and apparatus for feeding gases |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100522727B1 (en) | Reactor for depositing thin film on wafer | |
| KR20000015813U (en) | Exhaust gas recycle apparatus for semiconductor wafer depositor | |
| WO2013176408A1 (en) | Nozzle unit and substrate-processing system including the nozzle unit | |
| US20060148268A1 (en) | In-situ thin-film deposition method | |
| KR101345112B1 (en) | Thin film deposition apparatus | |
| JP5756528B2 (en) | Energy-saving silencer assembly, semiconductor manufacturing vacuum pump equipped with the same, and nitrogen gas heating method | |
| KR100899222B1 (en) | Shower head and vapor deposition apparatus employing the same | |
| KR100929535B1 (en) | Nozzle Unit and Atomic Layer Deposition Equipment with the Unit | |
| KR0181902B1 (en) | Chemical vapor deposition system for semiconductor fabricating process | |
| KR20000027055A (en) | Chemical vapor deposition equipment and chemical vapor deposition method using equipment | |
| KR200153296Y1 (en) | Wafer boat | |
| US20230272532A1 (en) | Semiconductor manufacturing apparatus and substrate treatment method using the same | |
| KR200173020Y1 (en) | Lower pressure chemical vapor deposition (lpcvd) | |
| KR200177325Y1 (en) | Gas injection apparatus for semiconductor low pressure chemical vapor depositor | |
| US20240084451A1 (en) | Film forming apparatus | |
| KR100269610B1 (en) | Method of riding natural oxide of fabricating semiconductor | |
| CN117385338A (en) | Low-pressure chemical vapor deposition reactor with closed inner cylinder structure | |
| KR200224426Y1 (en) | Structure of inner tube of furnace for lpcvd process in fabrication semiconductor device | |
| KR20030030058A (en) | Gas injector of chemical vapor deposition apparatus | |
| KR100585989B1 (en) | The canister with purge valve for the special chemical, and the purge method of the canister | |
| KR200303029Y1 (en) | Reaction tube structure of semiconductor deposition equipment | |
| KR20050052126A (en) | Flange with inner heater | |
| KR20020034355A (en) | Gas exhaust tube having means for heating | |
| KR19980046884U (en) | Injector Unit of Low Pressure Chemical Vapor Deposition Equipment | |
| KR20010087895A (en) | Gas flow nozzle structure for generating nitride in semiconductor fabrication equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |