KR100585989B1 - The canister with purge valve for the special chemical, and the purge method of the canister - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a container for handling an organometallic compound used to form a metal thin film, a metal nitride film, or a metal oxide thin film used in a semiconductor or electronic material. By efficiently cleaning and removing residues remaining in the valves and connecting pipes, it maximizes the use efficiency of the compound, extends the shelf life of the storage container, and suppresses the deterioration of the compound stored during use. Provided is a storage container having a purge valve that can be used and a purge method using the same.

Description

Storage vessel having a purge valve and the purge method using the same {The canister with purge valve for the special chemical, and the purge method of the canister}             

1 is a view showing an example of a conventional storage container.

2 is a view showing another example of a conventional storage container.

3 is a view showing another example of a conventional storage container.

4 is an enlarged view of a portion A of FIG. 3;

5 is a schematic view of a storage container according to an embodiment of the present invention.

6 is a schematic view of a storage container according to another embodiment of the present invention.

7 is a schematic view of a storage container according to another embodiment of the present invention.

8 is a schematic view of a storage container according to another embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

10: container body

20: container cover

   21: inlet 22: outlet

30: injection tube

   31: injection valve

40: discharge pipe

   41: discharge valve

50: purge tube

   51: purge valve 52: purge gas supply pipe

60: branch pipe

   61: second purge valve

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a container for handling an organometallic compound used to form a metal thin film, a metal nitride thin film, or a metal oxide thin film used in a semiconductor or electronic material. After completion, it is possible to efficiently clean and remove residues remaining in the valves and connecting pipes constituting the container, thereby maximizing the use efficiency of the compound, extending the shelf life of the container, and storing the compound during use. The present invention relates to a storage container having a purge valve capable of suppressing the deterioration of and a purge method using the same.

In general, in the manufacturing process related to semiconductor and electronic materials, an organic layer compound (ALD) or chemical vapor deposition method is used to deposit an organic metal compound used to form a metal thin film, a metal nitride thin film, or a metal oxide thin film on a ceramic thin film and a thick film. A process such as (CVD: Chemical Vapor Deposition) is used. In such a process as ALD and CVD, expensive specially designed compounds are used as core materials, and these compounds are filled in stainless steel or quartz containers specially manufactured according to the purpose and applied to the process.

As described above, organometallic compounds (hereinafter referred to as precursors) used in processes such as ALD and CVD are very sensitive to air and moisture, and when contacted with them, impurities, called particles, are generated from flammability or rapid deterioration. Decreases the efficiency of the CVD process. In addition, if the precursor is weak in temperature, and the vapor of the precursor is in a closed space for a long time, the precursor is deteriorated at a specific part of the container, thereby making it impossible to supply the precursor with reproducibility and continuity to the manufacturing device of the semiconductor device and the electronic material. . Therefore, a storage container considering this is needed.

A storage container used in a semiconductor device and an apparatus for manufacturing an electronic material is generally coupled to an upper portion of the container body 10 and the container body 10 in which precursors are stored, as shown in FIG. 1, and an inlet 21 and an outlet. The container cover 20 having an inlet 22, an inlet pipe 30 having an inlet valve 31 connected to the inlet 21 of the container cover 20 and injecting inert gas, and the container cover 20. It is connected to the outlet 22 and includes a discharge pipe 40 having a discharge valve 41 for discharging the injected inert gas and vaporized precursor.

In more detail, an inert gas such as argon (Ar) or nitrogen (N ₂ ), which is transferred to the injection tube 30, is injected through the injection port 21 for smooth vaporization of the stored precursor in the container body 10, and injection. The precursor gas phase vaporized by bubbling of the prepared gas is discharged into the discharge pipe 40 through the outlet 22 in a mixed state with the inert gas and then supplied to the desired device of the semiconductor and electronic device manufacturing process. . Here, when the compound is transferred to the liquid by different methods, the purpose of the injection pipe 30 and the discharge pipe 40 may be reversed and used. At this time, the injection valve 31 and the discharge valve 41 formed in the injection pipe 30 and the discharge pipe 40 are respectively transferred to the inert gas and inert bubbling gas and vaporized precursor mixed gas injected into the container body 10, respectively. It is formed to control properly.

The container having the above-described structure separates the container from the manufacturing apparatus with the injection valve 31 and the discharge valve 41 locked to refill the precursor or clean the container. In this process, the remaining precursor at the rear end of the discharge valve 41, which is a movement path of the precursor, is deposited while reacting with moisture or oxygen in the air to form particles. Therefore, when the container is used in the ALD and CVD processes as it is, Normal contamination will occur. Therefore, it is very important to remove the precursor remaining at the rear end of the discharge valve 41 before separating the container from the manufacturing apparatus.

In order to remove the precursor remaining in the rear end of the discharge valve 41, it was conventionally pumped using a vacuum for many hours. However, such a process has a disadvantage of causing an increase in manufacturing cost by reducing the use time of expensive manufacturing apparatus. In particular, despite many pumping times, the remaining precursors are not completely removed, which can be a source of contamination in the process and shorten the life of the container.

In order to overcome this problem, there has been an attempt to remove the precursor remaining behind the discharge valve 41 by installing a purge valve (Purge valve).

2, the second inlet valve 32 and the second outlet valve 42 are formed at the rear ends of the inlet valve 31 and the outlet valve 41, as shown in FIG. The purge pipe 50 in which the purge valve 51 is formed is connected to the rear end of the 32 and the second discharge valve 42. In the container having such a configuration, the purge gas (usually inert gas) transferred to the injection pipe 30 passes through the purge valve 51 and is discharged to the outside through the discharge pipe 40, remaining at the rear end of the discharge valve 41. The precursor is removed.

However, the container having the above-described structure has a portion having a predetermined volume in the connection portion with the purge valve 51 from the rear end of the discharge valve 41, which has the disadvantage that the cleaning of this portion is not easy, In order to have a long time purge and pumping has the disadvantage.

In order to compensate for this, the registered utility model No. 258032 can remove the precursor remaining at the rear end of the discharge valve 41 more efficiently by changing the position of the purge valve 51 in the container as shown in FIG. 3. One technique has been disclosed. That is, the length of the pipe connecting the discharge valve 41 and the purge valve 51 is minimized by forming the purge pipe 50 having the purge valve 51 at the rear end of the injection valve 31 and the discharge valve 41. By doing so, the precursor remaining at the rear end of the discharge valve 41 can be removed.

In the container of the above configuration, the discharge valve 41 includes a flow passage 42 through which the precursor moves inside, as shown in FIG. 4. When the discharge valve 41 is locked in the vessel, the precursor passing through the narrow passage 42 stays in the passage 42. However, most of the precursors used in the ALD and CVD processes of the semiconductor and electronics industries have low volatility, and thus, the precursor remaining in the flow path 42 is not easily removed because the purge gas does not pass directly into the flow path during the purge process. There is this. Particularly, in the case of a precursor which is easily deteriorated due to thermal decomposition or heat, the precursor vaporized while the container is closed during the ALD and CVD process by heating the precursor stays in the narrow passage 42 inside the discharge valve 41 for a long time. Is gradually decomposed or deteriorated, and these products are piled up inside the discharge valve 41, there is a problem that it is difficult to ensure the reproducibility of the total emissions by preventing or blocking a certain gas flow.

In particular, ALD and CVD processes generally do not stop continuously until the precursors have been used, once the precursor vessel is mounted in the device. In the case of a heat-sensitive precursor, the pyrolysis or deterioration of the precursor occurs when it is kept in the closed state in the inner passage 42 and the discharge pipe 40 of the discharge valve 41 for a long time in a heated state. These products of pyrolysis and deterioration gradually accumulate inside the discharge valve 41, narrowing the inner diameter of the flow path 42, and the air supply block the flow path 42, resulting in the reproducibility, continuity of the use process, and in particular, a decrease in efficiency. Cause serious mass production problems.

In order to solve this problem, various researches have been conducted. For example, various shapes of structures may be installed in the lower part of the container of the outlet port 22 so that the precursor that springs up when bubbling with an inert gas does not reach the discharge valve 41 as close as possible, or the vaporized precursor is closed. Even if the idle was not to stay in the discharge valve 41 for a long time, but did not achieve a significant improvement. The fundamental improvement is to minimize and eliminate the precursor remaining near the discharge valve 41 when the precursor is not used for a certain time during the ALD and CVD processes.

Accordingly, an object of the present invention is to provide a storage container having a discharge valve attached to a container and a purge valve that can effectively remove precursor residues remaining at a rear end of the precursor used in a semiconductor or electronic material. There is this.

It is another object of the present invention to provide a purge method for efficiently storing the discharge valve and the precursor residues remaining in the rear end of the storage container while preventing deterioration of the compound.

The present invention to achieve the above object

A container body in which the precursor is stored, the container cover coupled to the upper portion of the container body and having an inlet and outlet, an inlet tube having an inlet valve for inert gas is connected to the inlet of the container cover, connected to the outlet of the container cover In the storage container including a discharge pipe having a discharge valve for discharging the injected inert gas and vaporized precursor,

It provides a storage container having a purge valve, characterized in that it comprises a purge pipe having a purge valve connected between the discharge port and the discharge valve.

In addition, the present invention is equipped with the storage container in the deposition process apparatus such as ALD or CVD for manufacturing a semiconductor or electronic material device, and when the process is stopped, purge gas is discharged through the purge valve while the injection valve is closed Provided to the lower end to provide a purge method characterized in that to remove the remaining precursor in the interior of the discharge valve and the discharge valve.

Hereinafter, the storage container according to the present invention will be described in detail with reference to the accompanying drawings.

5 is a schematic view of a storage container according to an embodiment of the present invention, as shown in the drawing, the container body 10 in which the precursor is stored, coupled to the upper portion of the container body 10, and the inlet port 21 and the outlet port. The container cover 20 having an inlet 22, an inlet pipe 30 having an inlet valve 31 connected to the inlet 21 of the container cover 20 and injecting inert gas, and the container cover 20. A purge tube having a discharge pipe 41 connected to the discharge port 22 and having a discharge valve 41 through which the injected inert gas and the vaporized precursor are discharged, and a purge valve 51 connected between the discharge port 22 and the discharge valve 41. And 50.

Here, the container cover 20 coupled to the upper portion of the container body 10 may be detachably formed as necessary, or may be integrated with the container body 10 by welding so as to be completely sealed, and the container body ( 10) and the container cover 20 may be made of a variety of structures and shapes.

The container cover 20 is formed with an inlet 21 and an outlet 22. The inlet 21 is connected to the inlet tube 30 so that the inert gas is injected into the container body 10. 22) is connected to the discharge pipe where the vaporized precursor with the inert gas is discharged. If necessary, in addition to the inlet 21 and the outlet 22, a filling inlet for filling the precursor, a measuring device for measuring the flow rate and temperature may be further installed.

The injection pipe 30 is connected to the injection port 21 of the container cover 20 to help the inert gas to be injected into the container body 10, and to control the presence or absence of the inert gas and the injection amount thereof. 31 is formed.

The discharge pipe is connected to the outlet 22 of the container cover 20 to help the inert gas injected into the container body 10 and the vaporized precursor by the bubbling of the inert gas to be discharged, and the presence and absence of discharge A discharge valve 41 is formed to adjust.

According to the present invention, a purge pipe 50 having a purge valve 51 is connected between the discharge port 22 and the discharge valve 41. As shown in the drawing, the purge pipe 50 may allow the purge gas to be supplied through a separate purge gas supply pipe 52, and the purge gas may be a known inert gas such as argon (Ar) or nitrogen (N ₂ ). Gas is used.

As the purge pipe 50 having the purge valve 51 is connected between the discharge port 22 and the discharge valve 41 as described above, after the use of the container, the purge gas can be supplied from the lower end of the discharge valve 41. Including the inside of the discharge valve 41 after use of the container, it is possible to effectively remove the remaining precursor before and after the discharge valve 41.

In this case, the purge valve 51 and the discharge valve 41 may be configured as individual valve bodies, but the purge valve 51 and the discharge valve 41 may be configured as a single valve body. When the purge valve 51 and the discharge valve 41 are configured as a single valve body, purge gas can be injected from the purge valve 51 at the closest position of the lower end of the discharge valve 41, thereby minimizing unnecessary space. You can do it. The configuration of the valve body in which the purge valve 51 and the discharge valve 41 are one can be easily performed by applying that two known valves constitute one valve body.

FIG. 6 is a schematic view of a storage container according to another embodiment of the present invention. As shown in the drawing, one side of the container shown in FIG. 5 is connected to the rear end of the discharge valve 41, and the other side is purged. The branch pipe 60 having a second purge valve 61 connected to the gas supply pipe 52 is further formed.

When the branch pipe 60 having the second purge valve 61 is formed as described above, the precursor remaining in the front and rear of the discharge valve 41 can be more completely removed, and in particular, the container is mounted in the manufacturing apparatus. After the precursor is used, it is possible to release the atmosphere that may be present in each part to the outside.

At this time, the purge valve 51, the second purge valve 61 and the discharge valve 41 may be configured as a separate valve body, but if necessary, the purge valve 51 and the second purge valve 61 as one Or a purge valve 51 and a discharge valve 41 in one valve body, or a second purge valve 61 and a discharge valve 41 in one valve body. The purge valve 51, the second purge valve 61, and the discharge valve 41 can be configured as a single valve body. As such, when two valves are configured as one valve body or three valves as one valve body, unnecessary internal space can be reduced to a minimum.

7 is a schematic view of a storage container according to another embodiment of the present invention. As shown in the drawing, the storage container has a purge pipe 50 connected to an inert gas injection pipe 30 at a rear end of the injection valve 31. The purge gas is configured to be supplied.

When the purge pipe 50 is connected to the inert gas injection pipe 30 as described above, a separate purge gas supply pipe is not required, thereby reducing unnecessary space in the container and simplifying the configuration of the container.

In this case, the purge valve 51 and the discharge valve 41 may be configured as individual valve bodies, but the purge valve 51 and the discharge valve 41 may be configured as a single valve body. When the purge valve 51 and the discharge valve 41 are configured as a single valve body, purge gas can be injected from the purge valve 51 at the closest position of the lower end of the discharge valve 41, thereby minimizing unnecessary space. You can do it.

8 is a schematic view of a storage container according to another embodiment of the present invention. As shown in the drawing, one side of the container shown in FIG. 7 is connected to the rear end of the discharge valve 41, and the other side of the container is shown in FIG. Branch pipe 60 having a second purge valve 61 is further formed to be connected to the inert gas injection pipe 30.

When the branch pipe 60 having the second purge valve 61 is formed as described above, the precursor remaining in the front and rear of the discharge valve 41 can be more completely removed, and in particular, the container is mounted in the manufacturing apparatus. After the precursor is used, it is possible to release the atmosphere that may be present in each part to the outside.

At this time, the purge valve 51, the second purge valve 61 and the discharge valve 41 may be configured as a separate valve body, but if necessary, the purge valve 51 and the second purge valve 61 as one Or a purge valve 51 and a discharge valve 41 in one valve body, or a second purge valve 61 and a discharge valve 41 in one valve body. The purge valve 51, the second purge valve 61, and the discharge valve 41 can be configured as a single valve body. As such, when two valves are configured as one valve body or three valves as one valve body, unnecessary internal space can be reduced to a minimum.

The storage container according to the present invention having the configuration as shown in FIGS. 5 to 8 described above can be used in a deposition process apparatus such as ALD or CVD for manufacturing a semiconductor or electronic material element, and in most of the containers, The constitution allows heating to be carried out for the purpose of obtaining a sufficient precursor vapor pressure and preventing condensation of the precursor, which can be easily carried out by applying known techniques.

In the present invention, if the process is stopped while the vessel is mounted on the ALD or CVD deposition apparatus for more efficient purging, purge gas is discharged through the purge valve 51 while the injection valve 31 is locked. Supplying to the lower end provides a purge method for removing the remaining precursor inside the discharge valve 41 and before and after the discharge valve 41. According to the present invention, when the process is stopped or the container is removed, the purge gas is supplied to the lower end of the discharge valve 41 through the purge valve 51 and then the purge valve 51 is closed. In this state, the purge gas is supplied through the second purge valve 61 to provide a purge method of removing the precursor remaining in the discharge valve 41 and the rear end of the discharge valve 41.

When the purge method described above is applied, it is attached to the container when separating the container in the middle of the process or after the completion of the process, compared to the method of purging using a storage container having a purge pipe 50 connected to the rear end of the discharge valve 41. By minimizing the precursor remaining before and after the discharge valve 41 to suppress the contamination of the valve or tube that may occur when the container is detached, it is possible to maximize the device productivity by reducing the particle generation factor.

In addition, since the container according to the present invention can always purge the inert gas from the lower end of the discharge valve 41 when the process is stopped, the removal time of the precursor remaining in the valve flow path and the tube is shortened, thereby changing the container. This shorter time can extend the utilization time of the ALD and CVD apparatus. In addition, by minimizing the generation of particles in the flow path inside the valve to increase the frequency of recycling the valve can extend the service life of the container. In addition, it is possible to improve the productivity of the use process by preventing the clogging of the discharge valve in the process.

As described above, the storage container according to the present invention provides a storage container in which a purge pipe having a purge valve is connected between the discharge port and the discharge valve, so that such a container is used in an ALD or CVD deposition process in the manufacturing process of a semiconductor or electronic material. When separating the container in the middle of the process or after the completion of the process, minimize the remaining precursor before and after the discharge valve attached to the container to suppress the contamination of the valve or tube that may occur when the container is detached to reduce the particle generation factors It can maximize device mass production.

In addition, since the storage container according to the present invention can always purge the inert gas from the lower end of the discharge valve when the process is stopped in the ALD or CVD deposition process, the removal time of the precursor remaining in the valve flow path and the tube is shortened. The short exchange times of the vessels can extend the utilization time of ALD and CVD equipment.

In addition, the storage container according to the present invention can increase the frequency of recycling the valve by minimizing the generation of particles in the flow path of the valve to extend the period of use of the container, and also to prevent the clogging of the discharge valve during the process of use It can improve productivity.

The present invention has been described above with reference to the preferred embodiments shown in the drawings, but this is only exemplary, and thus the present invention is various modifications and equivalent other embodiments that can be obviously derived by those skilled in the art. It should be interpreted by the claims intended to cover examples.

Claims (13)

A container body in which the precursor is stored, the container cover coupled to the upper portion of the container body and having an inlet and outlet, an inlet tube having an inlet valve for inert gas is connected to the inlet of the container cover, connected to the outlet of the container cover In the storage container including a discharge pipe having a discharge valve for discharging the injected inert gas and vaporized precursor, And a purge tube having a purge valve connected between the discharge port and the discharge valve. The method according to claim 1, The purge pipe is a storage container having a purge valve, characterized in that the purge gas is supplied through a separately connected purge gas supply pipe. The method according to claim 2, One side is connected to the rear end of the discharge valve, the other side is a storage container having a purge valve, characterized in that it comprises a branch pipe having a second purge valve connected to the purge gas supply pipe. The method according to claim 1, The purge pipe is a storage container having a purge valve, characterized in that the purge gas is connected to the inert gas injection pipe at the rear end of the injection valve. The method according to claim 4, One side is connected to the rear end of the discharge valve, the other side is connected to the inert gas inlet pipe and the storage vessel having a purge valve, characterized in that it comprises a branch pipe having a second purge valve. The method according to claim 2 or 4, The purge valve and the storage valve having a purge valve, characterized in that each consisting of a separate valve body. The method according to claim 2 or 4, The storage container having a purge valve, characterized in that the purge valve and the discharge valve is composed of a single valve body. The method according to claim 3 or 5, The purge valve having a purge valve, characterized in that each of the purge valve, the second purge valve and the discharge valve is composed of a separate valve body. The method according to claim 3 or 5, The purge valve having a purge valve, characterized in that the purge valve and the second purge valve, the purge valve and the discharge valve or the second purge valve and the discharge valve is composed of a single valve body. The method according to claim 3 or 5, The storage container having a purge valve, characterized in that the purge valve, the second purge valve and the discharge valve is composed of a single valve body. The storage vessel of claim 1 is mounted on a deposition process apparatus such as ALD or CVD for manufacturing a semiconductor or electronic material element, and purge gas is discharged through the purge valve while the injection valve is closed when the process is stopped or the container is detached. A purge method, characterized in that for removing the precursor remaining in the interior of the discharge valve and the rear end of the discharge valve by supplying to the lower end. The storage vessel of claim 3 is mounted on a deposition process apparatus such as ALD or CVD for manufacturing a semiconductor or electronic material element, and purge gas is discharged through the purge valve while the injection valve is closed when the process is stopped or the container is detached. Purging the purge valve after supplying to the lower end and supplying purge gas through the second purge valve to remove the remaining precursor in the discharge valve and the rear end of the discharge valve. The storage vessel of claim 5 is mounted on a deposition process apparatus such as ALD or CVD for semiconductor or electronic material device manufacturing, and purge gas is discharged through the purge valve while the injection valve is closed when the process is stopped or the container is detached. Purging the purge valve after supplying to the lower end and supplying purge gas through the second purge valve to remove the remaining precursor in the discharge valve and the rear end of the discharge valve.

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