KR100269610B1 - Method of riding natural oxide of fabricating semiconductor - Google Patents

Method of riding natural oxide of fabricating semiconductor Download PDF

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KR100269610B1
KR100269610B1 KR1019970067206A KR19970067206A KR100269610B1 KR 100269610 B1 KR100269610 B1 KR 100269610B1 KR 1019970067206 A KR1019970067206 A KR 1019970067206A KR 19970067206 A KR19970067206 A KR 19970067206A KR 100269610 B1 KR100269610 B1 KR 100269610B1
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inner tube
wafer
process chamber
wafer boat
wafers
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KR1019970067206A
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Korean (ko)
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KR19990048484A (en
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최강제
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김영환
현대반도체주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: A method for eliminating a native oxide layer formed in manufacturing a semiconductor is provided to prevent the native oxide layer because of O2, by inserting any one of SO3, CO and NO which easily react with O2 into a process chamber, and by making the inserted gas react with the O2 induced to the process chamber. CONSTITUTION: An etch process of a wafer is performed in an inner tube(3). An outer tube(5) constitutes an outer wall of the inner tube. An end part of the outer tube is connected to the inner tube. A plurality of wafers are loaded in a wafer boat(11). The wafer boat loaded with the plurality of wafers is inserted into the inner tube. Reaction gas selected from a group of SO3, CO and NO is induced to the inside of the inner tube. The reaction gas chemically reacts with O2 remaining in the inner tube and O2 induced in inserting the wafer boat to eliminate the O2.

Description

반도체 제조시 생성되는 자연 산화막 제거방법{Method of riding natural oxide of fabricating semiconductor}Method of removing natural oxide film produced during semiconductor manufacturing {Method of riding natural oxide of fabricating semiconductor}

본 발명은 반도체 제조시 생성되는 자연 산화막 제거방법에 관한 것으로 더욱 상세하게는 웨이퍼의 저압 화학기상증착(Low Pressure Chemical Vapor Deposition : 이하 LPCVD라 칭함)장치에서 공정상 웨이퍼에 자연 산화막을 생성하는 O2와 상호 반응하는 가스인 SO3, CO, NO 성분의 가스를 공정 챔버내에 유입하여 O2를 제거하는 화학적방법에 의한 반도체 제조시 생성되는 자연 산화막 제거방법에 관한 것이다.The invention more particularly a low pressure chemical vapor deposition of the wafer to on the native oxide film removal methods which are generated when the semiconductor manufacturing: O 2 to generate a native oxide film on a process wafer in the (Low Pressure Chemical Vapor Deposition than LPCVD quot;) device The present invention relates to a method for removing a natural oxide film produced during semiconductor manufacturing by a chemical method of removing O 2 by introducing a gas of SO 3 , CO, and NO components, which are gases that react with each other, into a process chamber.

일반적으로 LPCVD장치에 의한 웨이퍼에 산화막 또는 질화막을 생성하는 작업에서 웨이퍼가 투입되어 작업이 이루어지는 공정 챔버내에 O2가 잔류하는 경우가 있다. 이러한 O2는 공정진행시 웨이퍼상에 산화막이 형성되지 않아야 할 전극이나 배선부분에까지 산화막을 형성하여 웨이퍼의 막형성에 악영향을 미치므로 공정 진행전에 이를 제거하는 작업이 수행된다.In general, in a process of producing an oxide film or a nitride film on a wafer by an LPCVD apparatus, the wafer is introduced and O 2 remains in the process chamber where the work is performed. Since O 2 forms an oxide film on the electrode or the wiring portion on which the oxide film should not be formed on the wafer during the process, it adversely affects the film formation of the wafer.

이렇게 O2를 제거하기 위해서는 상기 LPCVD 장치의 공정 챔버내로 웨이퍼가 투입되기 전에 N2가스로 공정 챔버내부를 채워 공정 챔버내의 O2를 제거하거하는 방법과, 웨이퍼를 공정 챔버와 연결된 로드 록 장치내에 투입한 후 로드 록 장치를 진공상태로 형성하여 O2를 제거한 다음에 공정 챔버내로 웨이퍼를 투입하는 방법이 사용된다.In order to remove this O 2 in the load lock device, a method for hageo with N 2 gas filled in the inside of the processing chamber to remove the O 2 in the process chamber and the wafer is associated with the processing chamber before the wafers are introduced into the process chamber of the LPCVD apparatus After loading, a method of forming a load lock device in a vacuum state to remove O 2 and then introducing a wafer into the process chamber is used.

이렇게 O2를 제거하는 종래 LPCVD장치의 공정 챔버는 도 1에서 도시된 바와같이 웨이퍼(1)의 식각공정이 진행되는 내부 튜브(3)와, 상기 내부 튜브(3)의 외벽을 이루며 상기 내부 튜브(3)와 일단이 상호 연통되는 외부 튜브(5)와, 상기 내·외부 튜브(3)(5)에 형성되어 N2가스를 유출입하는 가스 유입 및 배출관(7)(9)과, 다 수개의 웨이퍼(1)를 적재하여 상기 내부 튜브(3)내로 입출되는 웨이퍼 보우트(Boat)(11)로 구성된다.The process chamber of the conventional LPCVD apparatus for removing O 2 is formed in the inner tube 3 through which the etching process of the wafer 1 proceeds, and the outer wall of the inner tube 3 as shown in FIG. 1. (3) and the outer tube (5), one end of which is in communication with each other, the gas inlet and outlet pipes (7) (9) formed in the inner and outer tubes (3) (5) to flow in and out N 2 gas, It consists of a wafer boat (11) (11) which loads the two wafers 1 and enters into the inner tube (3).

상기 LPCVD장치에서의 O2제거 과정은 상기 내부 튜브(3)로 웨이퍼 보우트(11)가 투입되기 수 시간 전에 외부 튜브(5)의 일측에 형성된 가스 유입관(7)으로 N2가스를 유입하여 내부 튜브(3)와 외부 튜브(5)의 사이에 형성된 통로를 거쳐 내부 튜브(3)내로 N2가스가 충만하도록 공급된다.The O 2 removal process in the LPCVD apparatus introduces N 2 gas into the gas inlet tube 7 formed on one side of the outer tube 5 several hours before the wafer boat 11 is introduced into the inner tube 3. The N 2 gas is supplied to the inner tube 3 to be filled through a passage formed between the inner tube 3 and the outer tube 5.

즉, 상기 내부 튜브(3)의 외주연에 형성되는 외부 튜브(5)가 상기 내부 튜브(3)와 상부면이 상호 연통되어 형성되므로써 외부 튜브(5)에서 주입된 N2가스가 상기 연통된 부분을 통하여 내부 튜브(3)의 상측에서 하측방향으로 주입된다.That is, the outer tube 5 formed on the outer circumference of the inner tube 3 is formed by communicating with the inner tube 3 and the upper surface, so that the N 2 gas injected from the outer tube 5 is communicated with the inner tube 3. It is injected downward from the upper side of the inner tube 3 through the portion.

따라서 이렇게 주입된 N2가스는 일정압력으로 내부 튜브(3)에 잔류하는 O2를 불어내며, 불어진 O2는 내부 튜브(3)의 일측에 형성된 가스 배출관(9)을 통하여 공정 챔버(13) 밖으로 배출되고, 내부 튜브(5)내에는 N2가스만이 충만된 상태에서 다 수개의 웨이퍼(1)가 적재된 웨이퍼 보우트(11)가 투입되므로써 공정이 진행된다.Therefore, the injected N 2 gas blows O 2 remaining in the inner tube 3 at a constant pressure, and the blown O 2 flows through the gas discharge tube 9 formed at one side of the inner tube 3 to the process chamber 13. The process proceeds as the wafer boat 11 loaded with a plurality of wafers 1 is discharged out of the inner tube 5 and filled with only N 2 gas in the inner tube 5.

한편, 내부를 진공상태로 형성하는 로드 록(Load lock)장치(미도시)에 의한 O2제거는 상기 공정 챔버(13)의 투입부에 로드 록 장치(미도시)를 설치하여 웨이퍼(1)가 적재된 웨이퍼 보우트(11)를 투입한 후 로드 록 장치(미도시)의 내부를 진공상태로 유지하여 O2를 제거한다.On the other hand, O 2 removal by a load lock device (not shown) for forming the inside in a vacuum state, the wafer (1) by installing a load lock device (not shown) in the inlet of the process chamber 13 After inserting the loaded wafer boat 11, the inside of the load lock device (not shown) is kept in a vacuum state to remove O 2 .

이렇게 O2가 제거된 로드 록 장치(미도시)에서 공정 챔버(13)내로 웨이퍼 보우트(11)가 운반되므로써 공정 챔버(13)내의 O2유입이 사전에 차단된다.In this way, the O 2 inflow from the process chamber 13 is blocked by the wafer boat 11 being transported into the process chamber 13 in the load lock apparatus (not shown) in which the O 2 is removed.

그러나 종래의 LPCVD장치 내에서의 O2제거시 N2가스를 사용하는 방법은 웨이퍼 보우트가 공정 챔버내로 투입되는 순간에 외부의 O2가 일부 유입되어 웨이퍼와 상호 반응하는 것을 방지할 수 없으며 로드 록 장치에 의한 O2를 제거하는 방법은 공정 챔버와는 별도로 로드 록 장치를 설치하여야 하므로서 작업시설 및 공정단계가 복잡해지는 문제점이 있다.However, the method of using N 2 gas to remove O 2 in a conventional LPCVD apparatus does not prevent some external O 2 from flowing in and interacting with the wafer at the moment when the wafer boat is introduced into the process chamber. The method for removing O 2 by the device has a problem in that a work facility and a process step are complicated because a load lock device must be installed separately from the process chamber.

본 발명의 목적은 LPCVD장치의 공정 챔버내에 O2와 상호 반응이 용이한 SO3, CO, NO 성분 중 어느 하나의 가스를 투입하여 공정 챔버내로 유입되는 O2와 상호 화학적으로 반응시켜 O2를 제거하는 것은 물론 기존의 LPCVD장치를 사용하여 작업시설 및 공정을 단순화하는 반도체 제조시 생성되는 자연 산화막 제거방법을 제공하는 데 있다.An object of the present invention is easy to O 2 and the interaction within the process chamber of the LPCVD apparatus SO 3, CO, the O 2 and mutually by reaction with O 2 is introduced into the process chamber by introducing either a gas of NO component In addition, the present invention provides a method for removing a natural oxide film generated during semiconductor manufacturing that simplifies a work facility and a process using a conventional LPCVD apparatus.

따라서, 본 발명은 상기의 목적을 달성하고자, 웨이퍼의 식각공정이 진행되는 내부 튜브와, 상기 내부 튜브의 외벽을 이루며 상기 내부 튜브와 일단이 상호 연통되는 외부 튜브와, 다 수개의 웨이퍼가 적재된 웨이퍼 보우트(Boat)로 구성된 저압 화학기상증착 장치의 공정 챔버를 가지고, 내부튜브 내로 다 수개의 웨이퍼가 적재된 웨이퍼 보우트를 투입시키어 다 수개의 웨이퍼에 반도체 제조 시 생성되는 자연산화막 제거하는 방법에 있어서,Therefore, in order to achieve the above object, the present invention provides an inner tube through which an etching process of a wafer is performed, an outer tube forming an outer wall of the inner tube and communicating with one end of the inner tube, and a plurality of wafers loaded thereon. In a method of removing a natural oxide film generated during semiconductor manufacturing by inserting a wafer boat having a plurality of wafers loaded into an inner tube with a process chamber of a low pressure chemical vapor deposition apparatus composed of a wafer boat. ,

SO3, CO, NO 로 이루어진 일군으로부터 선택된 반응가스를 내부 튜브의 내측으로 유입시키어 내부 튜브내에 잔류하는 O2및 웨이퍼 보우트 투입 시 유입되는 O2와 상호 화학적으로 반응시키어 O2를 제거시킨 것이 특징이다.It was remove SO 3, CO, O 2, and the wafer boat O 2 and O 2 sikieo cross-reaction with the incoming time of preparation of the remaining reactive gases selected from the group consisting of NO within the inner tube sikieo flowing into the inside of the inner tube features to be.

도 1은 종래의 저압 화학기상증착장치의 공정 챔버를 도시한 구성도이고,1 is a block diagram showing a process chamber of a conventional low pressure chemical vapor deposition apparatus,

도 2는 본 발명의 저압 화학기상증착장치의 공정 챔버를 도시한 구성도이고,Figure 2 is a block diagram showing a process chamber of the low pressure chemical vapor deposition apparatus of the present invention,

도 3은 본 발명의 공정 챔버내에 웨이퍼가 적재된 상태를 도시한 구성도이다.3 is a configuration diagram showing a state in which a wafer is loaded in the process chamber of the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1 : 웨이퍼, 3 : 내부 튜브,1: wafer, 3: inner tube,

5 : 외부 튜브, 7 : 가스 유입관,5: outer tube, 7: gas inlet pipe,

9 : 가스 배출관, 11 : 웨이퍼 보우트,9: gas discharge pipe, 11: wafer boat,

13 : 공정 챔버,13: process chamber,

이하, 첨부된 도면을 참조하여 본 발명을 설명하면 다음과 같다.Hereinafter, the present invention will be described with reference to the accompanying drawings.

도 2 는 본 발명의 저압 화학기상증착장치의 공정 챔버를 도시한 구성도이다.Figure 2 is a block diagram showing a process chamber of the low pressure chemical vapor deposition apparatus of the present invention.

웨이퍼(1)를 식각하는 공정 챔버(13)에는 웨이퍼(1)가 투입되어 식각공정이 진행되는 내부 튜브(3)가 형성되고 상기 내부 튜브(3)의 외벽을 이루며 상부면이 상호 연통되는 외부 튜브(5)가 외주연에 형성된다.In the process chamber 13 for etching the wafer 1, an inner tube 3 into which the wafer 1 is etched to perform an etching process is formed, and forms an outer wall of the inner tube 3, and the upper surfaces thereof communicate with each other. The tube 5 is formed on the outer circumference.

이때 상기 외부 튜브(5)의 일측에 형성된 가스 유입관(7)을 통하여 SO3, CO, NO 가스 중 어느 하나의 가스가 유입되어 외부 튜브(5)와 내부 튜브(3)의 상호 연통된 부위를 통하여 내부 튜브(3)내에 유입된다.At this time, any one gas of SO 3 , CO, NO gas is introduced through the gas inlet pipe 7 formed on one side of the outer tube 5 to communicate with the outer tube 5 and the inner tube 3. Through the inner tube (3).

이러한 SO3, CO, NO 가스 중 어느 하나의 가스는 내부 튜브(3)내에 잔류하는 O2와 화학적으로 상호 작용하므로써 O2를 소진시킨다.Any one of these SO 3 , CO and NO gases exhausts O 2 by chemically interacting with O 2 remaining in the inner tube 3.

이때 상기 내부 튜브(3)에 형성된 가스 배출관(9)은 밀폐되어 내부의 가스가 외부로 방출되지 않도록 한 상태에서 전술한 작업이 진행됨이 바람직하다.At this time, the gas discharge pipe 9 formed in the inner tube 3 is preferably closed so that the above-described operation is performed in such a state that the gas inside is not discharged to the outside.

이렇게 O2가 제거된 상태의 상기 내부 튜브(3)에 다 수개의 웨이퍼(1)가 적재된 웨이퍼 보우트(11)가 투입된다.The wafer boat 11 in which a plurality of wafers 1 are loaded is introduced into the inner tube 3 in which O 2 is removed.

이때 상기 웨이퍼 보우트(11)가 내부 튜브(3)에 투입되는 동안에 외부의 O2가 유입되면 내부 튜브(3)에 충만한 SO3, CO, NO 가스 중 어느 하나의 가스와 상호 작용하므로써 유입된 O2가 제거된다.At this time, when the outside O 2 is introduced while the wafer boat 11 is introduced into the inner tube 3 , the O introduced by interacting with any one of SO 3 , CO, and NO gases filled in the inner tube 3 is introduced. 2 is removed.

따라서 공정이 진행되는 상기 내부 튜브(3)내에는 O2가 배제된 상태에서 웨이퍼(1)의 식각작업이 수행된다.Therefore, the etching operation of the wafer 1 is performed in the inner tube 3 in which the process is performed in a state where O 2 is excluded.

이렇게 식각작업이 진행된 후 상기 내부 튜브(3)내에 잔류하는 각종 가스류는 가스 배출관(9)을 통하여 배출된다.After the etching operation is performed, various gas streams remaining in the inner tube 3 are discharged through the gas discharge pipe 9.

상기에서 상술된 바와 같이, 본 발명은 LPCVD장치의 공정 챔버내에 O2와 상호 반응이 용이한 SO3, CO, NO 성분 중 어느 하나의 가스를 투입하여 공정 챔버내로 유입되는 O2와 상호 화학적으로 반응시켜 O2를 제거하여 O2에 의한 웨이퍼의 자연산화막 형성을 미연에 방지하는 것은 물론 기존의 LPCVD장치에 로드 록 장치를 별도로 부착하지 않은 상태에서 작업수행이 가능하여 작업시설 및 공정을 단순화하여 작업효율을 향상시키는 잇점이 있다.As described above, the present invention is chemically cross-linked with O 2 introduced into the process chamber by introducing a gas of any one of SO 3 , CO, NO component which is easy to interact with O 2 into the process chamber of the LPCVD apparatus. By removing O 2 by reacting to prevent the formation of natural oxide film on the wafer by O 2 , it is possible to perform the work without attaching the load lock device to the existing LPCVD system and simplify the work facility and process. This has the advantage of improving work efficiency.

Claims (1)

웨이퍼의 식각공정이 진행되는 내부 튜브와, 상기 내부 튜브의 외벽을 이루며 상기 내부 튜브와 일단이 상호 연통되는 외부 튜브와, 다 수개의 웨이퍼가 적재된 웨이퍼 보우트(Boat)로 구성된 저압 화학기상증착 장치의 공정 챔버를 가지고, 상기 내부튜브 내로 상기 다 수개의 웨이퍼가 적재된 웨이퍼 보우트를 투입시키어 상기 다 수개의 웨이퍼에 반도체 제조 시 생성되는 자연산화막 제거하는 방법에 있어서,Low pressure chemical vapor deposition apparatus comprising an inner tube through which a wafer etching process is performed, an outer tube forming an outer wall of the inner tube and communicating with one end of the inner tube, and a wafer boat on which a plurality of wafers are loaded A method of removing a natural oxide film produced during semiconductor manufacturing on a plurality of wafers by injecting a wafer boat in which the plurality of wafers are loaded into the inner tube having a process chamber of: SO3, CO, NO 로 이루어진 일군으로부터 선택된 반응가스를 상기 내부 튜브의 내측으로 유입시키어 상기 내부 튜브내에 잔류하는 O2및 상기 웨이퍼 보우트 투입 시 유입되는 O2와 상호 화학적으로 반응시키어 상기 O2를 제거시킨 것이 특징인 반도체 제조시 생성되는 자연 산화막 제거방법.SO 3, CO, the O 2 and the O 2 sikieo reaction with O 2 and the mutual chemical entering the time of preparation the wafer boat remaining reactive gases selected from the group consisting of NO in the inner tube sikieo inlet to the inside of said inner tube Natural oxide film removal method produced during semiconductor manufacturing characterized in that removed.
KR1019970067206A 1997-12-10 1997-12-10 Method of riding natural oxide of fabricating semiconductor KR100269610B1 (en)

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