KR960012621B1 - Oxide film removing method of wafer surface - Google Patents

Oxide film removing method of wafer surface Download PDF

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Publication number
KR960012621B1
KR960012621B1 KR1019930016027A KR930016027A KR960012621B1 KR 960012621 B1 KR960012621 B1 KR 960012621B1 KR 1019930016027 A KR1019930016027 A KR 1019930016027A KR 930016027 A KR930016027 A KR 930016027A KR 960012621 B1 KR960012621 B1 KR 960012621B1
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gas
oxide film
wafer
reactor
polysilicon
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KR1019930016027A
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Korean (ko)
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KR950006999A (en
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윤현수
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엘지반도체 주식회사
문정환
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

The method for removing natural oxide film or thermal oxide film on the wafer(13) surface prior to the formation of polysilicon comprises following stages: a first stage; throwing a wafer in a reaction furnace(11) after cleaning, pumping slowly by operating vacuum pump(P2), a second stage; ionizing CF4 gas by way of a plasma generator, introducing the CF4 gas into the reaction furnace, and then removing the oxide film by reacting the oxide film with gas, whereby reducing a contact resistance and current leakage during the vapor deposition of the polysilicon on the wafer surface.

Description

웨이퍼 표면 산화막 제거방법Wafer Surface Oxide Removal Method

제 1 도는 종래의 폴리실리콘 증착장치 개략도,1 is a schematic view of a conventional polysilicon deposition apparatus,

제 2 도는 본 발명의 폴리실리콘 증착장치 개략도.2 is a schematic view of a polysilicon deposition apparatus of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

11 : 반응로12 : 내부반응로11 reactor 12 internal reactor

13 : 웨이퍼14 : 보우트13: wafer 14: boat

15 : 질소 가스관16 : 사이렌 가스관15: nitrogen gas pipe 16: siren gas pipe

17, CF4 : 가스관18 : 플라즈마 발생장치17, CF4: gas pipe 18: plasma generator

19 : 가스배출관V1-V14 : 가스개폐용 밸브19: gas discharge pipe V1-V14: gas opening and closing valve

P1,P2 : 펌프MFC : 유량 조절기P1, P2: Pump MFC: Flow regulator

본 발명은 웨이퍼 표면 산화막 제거방법에 관한 것으로, 특히, 웨이퍼 표면에 폴리실리콘을 증착하고자 할 때 폴리실리콘 형상장치내에서 웨이퍼 표면상의 산화막을 제거하여 폴리실리콘 증착시 콘택저항 및 누설전류를 감소시키는데 적당하도록 한 웨이퍼 표면 산화막 제거방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for removing an oxide surface of a wafer, and in particular, to remove contact oxide and leakage current during polysilicon deposition by removing an oxide layer on a wafer surface in a polysilicon shape device when polysilicon is deposited on a wafer surface. A method of removing a wafer surface oxide film is provided.

이하에서 첨부된 도면을 참조하여 종래의 웨이퍼 표면 산화막 제거방법의 실시예를 설명하면 다음과 같다.Hereinafter, an embodiment of a conventional wafer surface oxide film removal method will be described with reference to the accompanying drawings.

제 1도는 종래의 기술을 설명하기 위한 폴리실리콘 증착장치의 개략도를 나타낸 것이로써, 가스를 주입하여 기판 표면에 물질을 형성하는 반응로(1)와 반응로(1)내의 내부반응로(2)와, 웨이퍼(3)를 실장하고 내부반응로(2)내에 장착되는 보우트(4)와, 상기 반응로(1)내에 반응가스와, 퍼지(Purge) 및 희석(Dilute) 가스를 주입하는 사일렌(SiH4) 가스관(5) 질소(N2) 가스관(6)이 연결된다.1 is a schematic view of a polysilicon deposition apparatus for explaining a conventional technique, in which a reactor (1) and an internal reactor (2) in a reactor (1) inject a gas to form a material on the substrate surface. And a boat (4) for mounting the wafer (3) and mounted in the internal reactor (2), and injecting the reaction gas, purge and dilute gas into the reactor (1). (SiH 4 ) Gas pipe 5 Nitrogen (N 2 ) gas pipe 6 is connected.

질소 가스관(6)은 개폐용 밸브(V21)와 유량조절기(MFC1, 3)를 구비하여 반응로(1)에 질소 가스를 주입하고, 사일렌(SiH4) 가스관(5)은 개폐용 밸브(V22)와, 유량조절기(MFC2), 밸브(V23)을 구비하고 폴리실리콘 증착시 사일렌(SiH4) 가스를 반응로(1)에 주입한다. 그리고 질소(N2) 가스관(6)과 사일렌 가스관(5)은 개폐용 밸브(V21, V22) 다음단에서 연결되어 밸브(V24)의 개폐에 의해 사일렌(SiH4)을 희석시켜 반응로(1)에 가스를 유입하도록 한다. 그리고 사일렌 가스관(5)의 유량조절기(MFC2) 다음단에는 배기용 가스관(5a)과 배기용 밸브(V25)가 구비된다. 그리고 반응로(1) 타측에는 반응로(1)를 진공상태로 만들기 위한 펌프(P21,P22)와 중간밸브(V26-V27)와 배기가스 개폐용 밸브(V29,V30)가 형성되어 있다.The nitrogen gas pipe 6 is provided with an opening / closing valve V21 and flow controllers MFC1 and 3 to inject nitrogen gas into the reactor 1, and the silene (SiH 4 ) gas pipe 5 is an opening / closing valve ( V22), a flow regulator (MFC2), and a valve (V23) are provided, and in order to deposit polysilicon, SiH 4 gas is injected into the reactor 1. The nitrogen (N 2 ) gas pipe 6 and the silylene gas pipe 5 are connected to the next stage of the opening / closing valves V21 and V22 to dilute the silica (SiH 4 ) by opening and closing the valve V24. Let gas flow in (1). In addition, an exhaust gas pipe 5a and an exhaust valve V25 are provided next to the flow regulator MFC2 of the silylene gas pipe 5. On the other side of the reactor 1, pumps P21 and P22, intermediate valves V26-V27 and exhaust gas opening / closing valves V29 and V30 for vacuuming the reactor 1 are formed.

이와같은 장치를 사용하여 웨이퍼 표면의 산화막을 제거하는 공정을 설명하면 다음과 같다.The process of removing the oxide film on the wafer surface using such an apparatus will be described below.

웨이퍼 표면상에 폴리실리콘을 증착하고자 할 때, 화학물질로 웨이퍼의 표면의 불순물을 제거한 후 웨이퍼 표면상에 존재하는 자연 산화막 또는 공정을 거쳤을 경우 열산화막을 식각 용액을 이용하여 제거한 후 질소 가스로 웨이퍼 상의 습기를 제거한 후 웨이퍼를 보우트(4)에 실장하고, 반응로(1)내의 내부반응로(2)에 보우트를 장착한 후, 반응로(1)를 진공상태로 만들기 위한 느린 펌핑을 일정시간 실시한후 반응로(1)의 압력을 증착 압력으로 만들기 위해 빠른 펌핑(pumping)을 실시하여 반응로(1) 진공도를 일정치로 유지한 상태에서 질소(N2)와 사일렌(SiH4) 가스를 혼합주입하여 웨이퍼(3) 표면에 폴리실리콘을 형성한다.In order to deposit polysilicon on the wafer surface, chemical impurities are removed from the surface of the wafer, and if the natural oxide film or the process existed on the wafer surface, the thermal oxide film is removed using an etching solution and then nitrogen gas. After removing the moisture on the wafer, the wafer is mounted on the boat 4, the boat is mounted on the internal reactor 2 in the reactor 1, and then the slow pumping to make the reactor 1 vacuum is constant. After a period of time, a rapid pumping was performed to bring the pressure of the reactor 1 to the deposition pressure, so that nitrogen (N 2 ) and xylene (SiH 4 ) were maintained at a constant level in the reactor (1). The gas is mixed and injected to form polysilicon on the wafer 3 surface.

그런데 이와 같은 종래 기술에 의한 폴리실리콘 형성에 있어서, 웨이퍼(3) 표면에 존재하는 산화막 또는 기타 필림(Film)을 제거한 후 반응로(1)에 들어가기전 웨이퍼(3)가 공기중에 노출되므로 자연 산화막이 성장되고, 반응로(1) 내에 웨이퍼(3)가 들어갈때 반응로(1)내에 존재하는 산소에 의하여 웨이퍼(3) 표면에 불필요한 산화막이 형성된다. 따라서, 웨이퍼(3)상에 폴리실리콘을 형성할시 산화막의 형성을 방지하지 못하여, 콘택부분에서 콘택저항 및 누설전류가 증가하여 소자의 특성을 떨어뜨리는 문제점이 있었다.However, in the polysilicon formation according to the prior art, after removing the oxide film or other film present on the surface of the wafer 3 and before entering the reactor 1, the natural oxide film is exposed because the wafer 3 is exposed to air. As a result, when the wafer 3 enters the reactor 1, an unnecessary oxide film is formed on the surface of the wafer 3 by oxygen existing in the reactor 1. Therefore, when polysilicon is formed on the wafer 3, the formation of the oxide film is not prevented, and thus the contact resistance and leakage current increase in the contact portion, thereby degrading the characteristics of the device.

본 발명은 이와 같은 종래 기술의 문제점을 해결하기 위해 안출된 것으로, 웨이퍼상에 폴리실리콘 콘택을 형성하기전 웨이퍼상에 존재하는 불필요한 산화막을 제거함에 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art, and its object is to remove unnecessary oxide films present on a wafer before forming polysilicon contacts on the wafer.

이와같은 목적을 실현하기 위한 본 발명은 폴리실리콘 형성장치의 반응로내에 산화막 식각용 CF4 가스를 주입할 수 있도록 하고 플라즈마 발생장치를 추가로 설비됨이 특징이다.The present invention for realizing the above object is characterized in that the CF4 gas for etching the oxide film into the reaction furnace of the polysilicon forming apparatus and additionally equipped with a plasma generator.

이하에서 첨부된 도면을 참조하여 본 발명의 실시예를 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.

제 2 도는 본 발명에 이용된 폴리실리콘 증착장치의 개략도를 나타낸 것으로써, 가스를 주입하고, 전계를 형성시켜 기판상에 접합물질이 형성되도록 화학반응을 일으키도록 하는 반응로(11)와, 반응로(11)의 외벽과 일정간격 격리되어 형성된 내부반응로(12)와, 웨이퍼(13)를 실장하고 내부반응로(12)에 장착되는 보우트(14)와, 상기 반응로(11)에 주입되는 가스로서는 퍼지(purge)용 질소(N2) 가스, 폴리실리콘 형성용 사일렌(SiH4) 가스, 산화막 에칭용 CF4 가스가 구비되고, 플라즈마 발생장치가 구비된다.2 is a schematic view of the polysilicon deposition apparatus used in the present invention, in which a gas is injected, and an electric reactor 11 is formed so that a chemical reaction is performed to form an electric field to form a bonding material on the substrate. Inner reactor 12 formed separated from the outer wall of the furnace 11 by a predetermined interval, a boat 14 on which the wafer 13 is mounted and mounted in the inner reactor 12, and injected into the reactor 11 Examples of the gas to be used include a purge nitrogen (N 2 ) gas, a polysilicon forming sile (SiH 4 ) gas, and an oxide film etching CF 4 gas, and a plasma generator.

반응로(11)에 주입되는 가스관에는 모두 개폐용 밸브(V1, V2, V3)와 유량조절기(MFC1,MFC2,MFC3)를 구비한다.The gas pipes injected into the reactor 11 are all provided with opening / closing valves V1, V2, V3 and flow rate regulators MFC1, MFC2, MFC3.

그리고 질소(N2) 가스관(15)과 사일렌(SiH4) 가스관(16)은 상호 연결되어 버블링용 밸브(V4)에 의해 공정시 질소 가스를 사일렌(SiH4)에 혼합하여 농도를 조절한다. 또한 질소(N2) 가스관(15)은 CF4 가스관(17)과 연결되어 개폐용 밸브(V5)와 유량조절기(MFC4)를 구비하고, 반응로(11)에 유입되는 CF4 가스의 농도비를 조절토록 한다.In addition, the nitrogen (N 2 ) gas pipe 15 and the silylene (SiH 4 ) gas pipe 16 are connected to each other to control the concentration by mixing nitrogen gas in the silane (SiH 4 ) during the process by the bubbling valve (V4). do. In addition, the nitrogen (N 2 ) gas pipe (15) is connected to the CF4 gas pipe (17) is provided with an opening and closing valve (V5) and a flow regulator (MFC4), to adjust the concentration ratio of the CF4 gas flowing into the reactor (11). do.

상기 CF4 가스관에는 플리즈마 발생장치(18)가 연결구성되고, 사일렌(SiH4) 가스관(16)과 CF4 가스관(17)의 최종단예는 반응로(11)에 가스의 유입을 경우에 따라 차단하기 위한 가스유입 차단용 밸브(V6,V7)이 구비되고, 가스 유입 차단용 밸브(V6,V7)의 전단에 각각 연결된 가스관에는 유입가스 배기시 사용하는 가스배기용 밸브(V8,V9)가 구비된다.The plasma generator 18 is connected to the CF4 gas pipe, and the final stage of the silene (SiH 4 ) gas pipe 16 and the CF4 gas pipe 17 blocks the inflow of gas into the reactor 11 in some cases. The gas inlet shutoff valves V6 and V7 are provided, and the gas pipes connected to the front ends of the gas inlet shutoff valves V6 and V7 are provided with gas exhaust valves V8 and V9 for exhausting the inlet gas. do.

그리고, 반응가스 유입측의 타측에는 반응로(11)를 진공상태로 만들기 위한 배기관(19)에 펌프(P1,P2)와, 가스의 배출을 조절하는 밸브(V10-V14)를 구비한다.On the other side of the reaction gas inlet side, the exhaust pipes 19 for making the reactor 11 in a vacuum state include pumps P1 and P2 and valves V10-V14 for controlling the discharge of the gas.

이와같이 구성된 폴리실리콘 형성장치를 이용한 웨이퍼(13)상의 산화막 제거의 실시예를 설명하면 다음과 같다.An embodiment of removing the oxide film on the wafer 13 using the polysilicon forming apparatus configured as described above is as follows.

웨이퍼(13)상에 폴리실리콘을 증착하기 위해 웨이퍼(13)를 보우트(14)에 실장한후, 보우트(14)를 내부반응로(12)내에 장착한 후, 반응로(11)를 진공상태로 만들기 위해 진공용 펌프(P2)를 가동하여 느린펌핑(Slow Pumping)을 시작함과 동시에, 밸브(V3)을 열고, 유량조절기(MFC3)를 조절하여 플라즈마 발생장치(18)에 유입하면 CF4 가스가 이온화되어 반응로(11)에 유입된다.After the wafer 13 is mounted on the boat 14 to deposit polysilicon on the wafer 13, the boat 14 is mounted in the internal reactor 12, and the reactor 11 is then vacuumed. When operating the vacuum pump (P2) to start the slow pumping (Slow Pumping), while opening the valve (V3), adjust the flow regulator (MFC3) flows into the plasma generator 18 to enter the CF4 gas Is ionized and introduced into the reactor (11).

이때, 반응로(11)에 CFx기(Radical)는 웨이퍼 표면 산화막과 반응하면서, 산화막이 제거되고, 미반응가스는 배기된다.At this time, the CFx group in the reactor 11 reacts with the wafer surface oxide film, the oxide film is removed, and the unreacted gas is exhausted.

웨이퍼(13) 표면의 불필요한 산화막이 제거되면 CF4 가스관의 밸브(V3, MFC3, V7)를 닫고, 플라즈마 발생을 중지한다.When the unnecessary oxide film on the surface of the wafer 13 is removed, the valves V3, MFC3, and V7 of the CF4 gas pipe are closed to stop the plasma generation.

이때 반응로(11)내에 질소(N2)를 주입시켜 반응로(11)내에 존재하는 CF4 가스를 배기시킨다.At this time, nitrogen (N2) is injected into the reactor (11) to exhaust the CF4 gas present in the reactor (11).

이후 반응로(11) 압력이 낮아지면 펌프(P1,P2)를 가동시켜 빠른 배기를 실시하여 반응로(11)내의 압력을 증착 압력으로 만든 다음 사일렌(SiH4) 가스와 질소 가스를 일정비율로 반응로(11)내에 주입하여 웨이퍼(13) 표면상에 폴리실리콘을 형성한다.Then, when the pressure of the reactor 11 is lowered, the pumps P1 and P2 are operated to perform rapid evacuation to make the pressure in the reactor 11 the deposition pressure, and then a predetermined ratio of the silica (SiH 4 ) gas and the nitrogen gas. The furnace is injected into the reactor 11 to form polysilicon on the wafer 13 surface.

이와같은 본 발명은 반도체 기판 또는 트랜지스터의 소오스 영역 표면의 산화막을 완전히 제거한 상태에서 폴리실리콘을 증착하므로 접합 계면에서의 콘택저항 및 누설전류가 감소하여 소자의 특성을 향상시키는 효과가 있다.As described above, since the polysilicon is deposited while the oxide film on the surface of the source region of the semiconductor substrate or the transistor is completely removed, the contact resistance and the leakage current at the junction interface are reduced, thereby improving the characteristics of the device.

Claims (1)

웨이퍼(13)상에 폴리실리콘을 형성하기전 웨이퍼(13) 표면상의 자연 산화막 또는 열산화막을 제거하는 방법에 있어서, 웨이퍼(13)을 크리닝한 후 반응로(11)에 실장하고, 진공펌프(P2)를 가동하여 느린펌핑하는 1단계, CF4 가스가 플라즈마 발생장치(18)를 거쳐 이온화되고 반응로(11)에 유입되어 산화막과 반응하여 산화막이 제거되는 2단계로 이루어짐을 특징으로 하는 웨이퍼 표면 산화막 제거방법.In the method of removing the natural oxide film or the thermal oxide film on the surface of the wafer 13 before forming polysilicon on the wafer 13, the wafer 13 is cleaned and then mounted in the reactor 11, and a vacuum pump ( Wafer surface characterized in that the first step of the slow pumping by operating P2), the CF4 gas is ionized through the plasma generating device 18, introduced into the reactor 11 and reacted with the oxide film to remove the oxide film Oxide removal method.
KR1019930016027A 1993-08-18 1993-08-18 Oxide film removing method of wafer surface KR960012621B1 (en)

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