JP2752824B2 - Vertical vacuum deposition equipment - Google Patents

Vertical vacuum deposition equipment

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Publication number
JP2752824B2
JP2752824B2 JP3353904A JP35390491A JP2752824B2 JP 2752824 B2 JP2752824 B2 JP 2752824B2 JP 3353904 A JP3353904 A JP 3353904A JP 35390491 A JP35390491 A JP 35390491A JP 2752824 B2 JP2752824 B2 JP 2752824B2
Authority
JP
Japan
Prior art keywords
inert gas
tube
quartz
pipe
quartz tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3353904A
Other languages
Japanese (ja)
Other versions
JPH05166737A (en
Inventor
浩 永野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YAMAGUCHI NIPPON DENKI KK
Original Assignee
YAMAGUCHI NIPPON DENKI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YAMAGUCHI NIPPON DENKI KK filed Critical YAMAGUCHI NIPPON DENKI KK
Priority to JP3353904A priority Critical patent/JP2752824B2/en
Publication of JPH05166737A publication Critical patent/JPH05166737A/en
Application granted granted Critical
Publication of JP2752824B2 publication Critical patent/JP2752824B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、縦型減圧気相成長装置
に関し、特に、LSIの製造装置に係り、低歩留の原因
となる発塵を抑制し、かつ、反応室内を十分にガス置換
し得る縦型減圧気相成長装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical vacuum vapor deposition apparatus, and more particularly to an apparatus for manufacturing an LSI, which suppresses dust generation which causes a low yield, and sufficiently supplies gas in a reaction chamber. The present invention relates to a vertical vacuum vapor deposition apparatus that can be replaced.

【0002】[0002]

【従来の技術】従来の縦型減圧気相成長装置は、図3
(従来装置の縦断面図)に示すように、外部石英管1、
内部石英管2、フランジ14に接続した不活性ガス導入
管4、反応ガス供給管5及び排気管9を主要構成とする
装置である。
2. Description of the Related Art A conventional vertical reduced pressure vapor deposition apparatus is shown in FIG.
As shown in FIG.
The apparatus mainly includes an internal quartz tube 2, an inert gas introduction tube 4 connected to a flange 14, a reaction gas supply tube 5, and an exhaust tube 9.

【0003】そして、ウエハ8を載せた石英ボ−ト6の
入炉時に供給する不活性ガスは、不活性ガス導入管4を
介してフランジ14から外部石英管1と内部石英管2と
の間を通り、反応室内の上部から下方に流れるような構
成からなっている。なお、図3において、3はヒ−タ
−、7はハッチ、10はバルブ、11はブ−スタ−ポン
プ、12はドライポンプである。
[0003] An inert gas supplied when the quartz boat 6 on which the wafer 8 is mounted enters the furnace is supplied from the flange 14 via the inert gas introduction pipe 4 to the space between the outer quartz tube 1 and the inner quartz tube 2. And flows downward from the upper part in the reaction chamber. In FIG. 3, 3 is a heater, 7 is a hatch, 10 is a valve, 11 is a booster pump, and 12 is a dry pump.

【0004】[0004]

【発明が解決しようとする課題】ところで、従来の上記
縦型減圧気相成長装置では、図3に示すように、不活性
ガス導入管4がフランジ14に接続されており、そし
て、石英ボ−ト6の入炉時に反応室内へ不活性ガスをフ
ランジ14より供給するため、この不活性ガスに同伴し
て該フランジ14内部に堆積している反応生成物を巻き
上げるという問題点があった。
By the way, in the above-mentioned conventional vertical decompression vapor phase growth apparatus, as shown in FIG. 3, an inert gas introduction pipe 4 is connected to a flange 14, and a quartz bobbin is formed. Since the inert gas is supplied from the flange 14 into the reaction chamber when the furnace 6 enters the furnace, there is a problem that the reaction product deposited inside the flange 14 is wound up along with the inert gas.

【0005】そこで、本発明は、上記問題点を解消する
縦型減圧気相成長装置を提供することを目的とし、詳細
には、フランジ内部の反応生成物の巻き上げを防止し、
低歩留の原因となる発塵を抑制することができ、かつ、
反応室内を十分にガス置換し得る縦型減圧気相成長装置
を提供することを目的とする。
Accordingly, an object of the present invention is to provide a vertical type reduced pressure vapor phase growth apparatus which solves the above-mentioned problems, and more specifically, prevents a reaction product from being rolled up inside a flange,
It is possible to suppress dust generation that causes low yield , and
And to provide a vertical pressure chemical vapor deposition apparatus that obtained sufficiently gas replacement reaction chamber.

【0006】[0006]

【課題を解決するための手段】そして、本発明は、上記
目的を達成するため、外部石英管と内部石英管との間に
不活性ガス供給管を設置する点を特徴とし、また、排気
配管のバルブの上流側と下流側を結び、不活性ガス導入
時に作動して十分に排気する為の補助配管を設け、これ
により、外部石英管と内部石英管との間のガス置換を行
うことができ、反応室内を十分にガス置換できるように
した点を特徴とする。
In order to achieve the above object, the present invention is characterized in that an inert gas supply pipe is provided between an external quartz pipe and an internal quartz pipe. Connect the upstream and downstream sides of the valve and introduce inert gas
Auxiliary piping for operating and exhausting air at times is provided, whereby gas can be replaced between the external quartz tube and the internal quartz tube, and the gas inside the reaction chamber can be sufficiently replaced. Features.

【0007】即ち、本発明は、外部石英管と内部石英管
を有する反応室及び反応ガス供給管、不活性ガス導入
管、排気配管を具備してなる縦型減圧気相成長装置にお
いて、不活性ガス供給管を外部石英管と内部石英管との
間に設置し、この不活性ガス供給管の先端に複数のガス
放出穴を有する吹き出し口を石英ボ−トの真上部に設
け、かつ、前記排気配管のバルブの上流側と下流側を結
び、不活性ガス導入時に作動して十分に排気する為の
助配管を配設してなることを特徴とする縦型減圧気相成
長装置を要旨とするものである。
That is, the present invention relates to a vertical decompression vapor phase growth apparatus comprising a reaction chamber having an external quartz tube and an internal quartz tube, a reaction gas supply tube, an inert gas introduction tube, and an exhaust tube. established the gas supply pipe between the external quartz tube and the inner quartz tube, the outlet having a plurality of gas ejection holes on the tip of the inert gas supply pipe quartz ball - provided the true top of bets, and the Connect the upstream and downstream sides of the exhaust pipe valve.
The invention is also directed to a vertical reduced-pressure vapor deposition apparatus characterized by providing an auxiliary pipe for operating when introducing an inert gas and sufficiently exhausting the gas.

【0008】[0008]

【実施例】次に、本発明の実施例を図1に基づいて詳細
に説明する。図1は、本発明の一実施例である縦型減圧
気相成長装置の縦断面図であり、この装置は、ウエハ8
を載せた石英ボ−ト6が入炉する際、不活性ガス(例え
ば窒素)を供給する不活性ガス供給管15を外部石英管
1と内部石英管2との間に設置し、不活性ガス供給管1
5の先端に複数のガス放出穴を有する吹き出し口16
を、石英ボ−ト6の真上部に設けた構造の装置である。
このような不活性ガス供給管15を配設することによ
り、フランジ14に堆積した反応生成物の巻き上げを防
止することができる。
Next, an embodiment of the present invention will be described in detail with reference to FIG. FIG. 1 is a vertical sectional view of a vertical reduced pressure vapor deposition apparatus according to one embodiment of the present invention.
When the quartz boat 6 carrying the gas enters the furnace, an inert gas supply pipe 15 for supplying an inert gas (for example, nitrogen) is installed between the outer quartz pipe 1 and the inner quartz pipe 2, and the inert gas is supplied. Supply pipe 1
Outlet 16 having a plurality of gas discharge holes at the tip of 5
Is provided directly above the quartz boat 6.
By arranging such an inert gas supply pipe 15, it is possible to prevent the reaction products deposited on the flange 14 from being wound up.

【0009】また、排気配管9のバルブ10の上流側と
下流側を結ぶ補助配管13を備えた装置であり、これに
よって、不活性ガス導入時に補助配管13を介して排気
し、外部石英管1と内部石英管2との間の不活性ガス置
換を十分に行うことができる。即ち、ウエハ8を搭載し
た石英ボード6を縦型減圧気相成長装置に入炉する際、
不活性ガス導入管4を開き、同時に補助配管13を開く
(バルブ10は閉じられている)。そして、石英ボート
6の真上に設けた吹き出し口16から不活性ガスを導入
し、ウエハ8を搭載した石英ボード6を通り、補助配管
13を介して、充分に排気する。これにより、不活性ガ
ス導入時に、ウエハ8の表面で自然酸化膜が生成される
のを防止することができる。(なお、図1において、3
はヒ−タ−、4は不活性ガス導入管、5は反応ガス供給
管、7はハッチ、10はバルブ、11はブ−スタ−ポン
プ、12はドライポンプであり、図3に示した前記従来
装置と同一のものである。 ここで、図1に示す縦型減
圧気相成長装置の「気相成長ステップ」を説明すると、
次のとおりである。 (1) ウエハを搭載した石英ボードを縦型減圧気相成長装
置に入炉時に、「反応ガス供給管5→閉」「不活性ガス
導入管4→開」「バルブ10→閉」「補助配管13→
開」とする。(このように、不活性ガス導入時に、補助
配管13により、ウエハ8の表面で自然酸化膜が生成さ
れるのを防止するように、不活性ガス置換を十分に行
う。) (2) 気相成長時に、「反応ガス供給管5→開」「不活性
ガス導入管4→閉」「バルブ10→開」「補助配管13
→閉」とする。
Further, the exhaust pipe 9 is located on the upstream side of the valve 10.
This is a device provided with an auxiliary pipe 13 connecting the downstream side , so that when the inert gas is introduced, exhaust is performed through the auxiliary pipe 13.
In addition, the inert gas can be sufficiently replaced between the outer quartz tube 1 and the inner quartz tube 2. That is, the wafer 8 is mounted
When entering the quartz board 6 into the vertical vacuum deposition apparatus,
Open the inert gas introduction pipe 4 and simultaneously open the auxiliary pipe 13
(Valve 10 is closed). And the quartz boat
Inert gas is introduced from outlet 16 provided directly above 6
Then, through the quartz board 6 on which the wafer 8 is mounted,
Exhaust well through 13. As a result, inert gas
During the introduction of the silicon oxide, a natural oxide film is generated on the surface of the wafer 8.
Can be prevented. ( Note that in FIG. 1, 3
3 is a heater, 4 is an inert gas introduction pipe, 5 is a reaction gas supply pipe, 7 is a hatch, 10 is a valve, 11 is a booster pump, and 12 is a dry pump, as shown in FIG. It is the same as the conventional device. ) Here, vertical down shown in FIG. 1
Explaining the "vapor phase growth step" of the high pressure vapor phase epitaxy apparatus,
It is as follows. (1) A quartz board on which a wafer is mounted is vertically
When entering the furnace, "reactive gas supply pipe 5 → closed""inert gas
Inlet pipe 4 → open ”, valve 10 → closed,“ auxiliary pipe 13 →
Open. " (Thus, when introducing inert gas,
A natural oxide film is formed on the surface of the wafer 8 by the pipe 13.
Inert gas replacement is sufficient to prevent
U. ) (2) gas phase during the growth, the "reaction gas supply pipe 5 → Open,""inert
Gas inlet pipe 4 → closed ”Valve 10 → opened” Auxiliary pipe 13
→ Close ”.

【0010】次に、本発明の装置の発塵抑制効果を図2
に基づいて説明する。図2は、本発明の装置を用いた場
合の酸化膜成長における発塵数を従来装置を用いた場合
の発塵数と比較した図である。図2において、縦軸はウ
エハ当りの発塵数、横軸は処理回数であり、この図2に
よれば、本発明の装置では、発塵数は、従来装置に比べ
て極めて少ないレベルで安定していることが理解でき
る。
Next, the effect of suppressing dust generation of the apparatus of the present invention is shown in FIG.
It will be described based on. FIG. 2 is a diagram in which the number of particles generated in the growth of an oxide film when the apparatus of the present invention is used is compared with the number of particles generated when the conventional apparatus is used. In FIG. 2, the vertical axis represents the number of particles generated per wafer, and the horizontal axis represents the number of times of processing. According to FIG. 2, the number of particles generated by the apparatus of the present invention is stable at an extremely small level as compared with the conventional apparatus. You can understand that you are doing.

【0011】[0011]

【発明の効果】本発明は、以上詳記したとおり、不活性
ガス供給管を外部石英管と内部石英管との間に設置し、
該不活性ガス供給管の先端に複数のガス放出穴を有する
吹き出し口を石英ボ−トの真上部に設けることにより、
石英ボ−トが入炉する際、不活性ガス供給管内を流れる
不活性ガスがフランジ内部の反応生成物を巻き上げるこ
とを防止し、低歩留の原因となる発塵を抑制する効果が
生ずる。また、本発明は、排気配管のバルブの上流側と
下流側を結び、不活性ガス導入時に作動して十分に排気
する為の補助配管を設けることにより、外部石英管と内
部石英管の間のガス置換を行うことができ、反応室内を
十分にガス置換できる(これにより、ウエハ表面の自然
酸化膜生成が防止できる)という効果を有する。
According to the present invention, as described in detail above, an inert gas supply pipe is installed between an external quartz pipe and an internal quartz pipe,
By providing a blowout port having a plurality of gas discharge holes at the end of the inert gas supply pipe just above the quartz boat,
When the quartz boat enters the furnace, the inert gas flowing in the inert gas supply pipe is prevented from rolling up the reaction products inside the flange, and the effect of suppressing dust generation which causes a low yield is produced. Further, the present invention relates to an exhaust pipe on the upstream side of a valve.
Connect downstream and operate when introducing inert gas to exhaust sufficiently
By providing an auxiliary pipe for performing the gas exchange, the gas exchange between the external quartz tube and the internal quartz tube can be performed, and the gas inside the reaction chamber can be sufficiently exchanged.
(The generation of an oxide film can be prevented) .

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例である縦型減圧気相成長装置
の縦断面図である。
FIG. 1 is a vertical sectional view of a vertical reduced pressure vapor phase epitaxy apparatus according to one embodiment of the present invention.

【図2】本発明の装置を用いた場合の酸化膜成長におけ
る発塵数を従来装置を用いた場合の発塵数と比較した図
である。
FIG. 2 is a diagram illustrating a comparison between the number of particles generated in the growth of an oxide film when the apparatus of the present invention is used and the number of particles generated when a conventional apparatus is used.

【図3】従来の縦型減圧気相成長装置の縦断面図であ
る。
FIG. 3 is a longitudinal sectional view of a conventional vertical reduced-pressure vapor deposition apparatus.

【符号の説明】[Explanation of symbols]

1 外部石英管 2 内部石英管 3 ヒ−タ− 4 不活性ガス導入管 5 反応ガス供給管 6 石英ボ−ト 7 ハッチ 8 ウエハ 9 排気配管 10 バルブ 11 ブ−スタ−ポンプ 12 ドライポンプ 13 補助配管 14 フランジ 15 不活性ガス供給管 16 吹き出し口 DESCRIPTION OF SYMBOLS 1 External quartz tube 2 Inner quartz tube 3 Heater 4 Inert gas introduction tube 5 Reaction gas supply tube 6 Quartz boat 7 Hatch 8 Wafer 9 Exhaust piping 10 Valve 11 Booster pump 12 Dry pump 13 Auxiliary piping 14 Flange 15 Inert gas supply pipe 16 Outlet

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 外部石英管と内部石英管を有する反応室
及び反応ガス供給管、不活性ガス導入管、排気配管を具
備してなる縦型減圧気相成長装置において、不活性ガス
供給管を外部石英管と内部石英管との間に設置し、この
不活性ガス供給管の先端に複数のガス放出穴を有する吹
き出し口を石英ボ−トの真上部に設け、かつ、前記排気
配管のバルブの上流側と下流側を結び、不活性ガス導入
時に作動して十分に排気する為の補助配管を配設してな
ることを特徴とする縦型減圧気相成長装置。
1. A vertical reduced-pressure vapor phase growth apparatus comprising a reaction chamber having an external quartz tube and an internal quartz tube, a reaction gas supply tube, an inert gas introduction tube, and an exhaust tube. placed between the outer quartz tube and the inner quartz tube, the outlet having a plurality of gas ejection holes on the tip of the inert gas supply pipe quartz ball - provided the true top of bets, and the exhaust pipe valve The upstream and downstream sides of the system and introduce inert gas
A vertical reduced-pressure vapor phase growth apparatus characterized in that an auxiliary pipe for operating and evacuating sufficiently is provided .
JP3353904A 1991-12-19 1991-12-19 Vertical vacuum deposition equipment Expired - Lifetime JP2752824B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3353904A JP2752824B2 (en) 1991-12-19 1991-12-19 Vertical vacuum deposition equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3353904A JP2752824B2 (en) 1991-12-19 1991-12-19 Vertical vacuum deposition equipment

Publications (2)

Publication Number Publication Date
JPH05166737A JPH05166737A (en) 1993-07-02
JP2752824B2 true JP2752824B2 (en) 1998-05-18

Family

ID=18434009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3353904A Expired - Lifetime JP2752824B2 (en) 1991-12-19 1991-12-19 Vertical vacuum deposition equipment

Country Status (1)

Country Link
JP (1) JP2752824B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3270730B2 (en) 1997-03-21 2002-04-02 株式会社日立国際電気 Substrate processing apparatus and substrate processing method
WO2014157071A1 (en) * 2013-03-25 2014-10-02 株式会社日立国際電気 Substrate processing device, method for manufacturing semiconductor device, and method for processing substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0347531A (en) * 1989-07-11 1991-02-28 Tokyo Electron Sagami Ltd Fluid dispersing apparatus and treatment apparatus using the same

Also Published As

Publication number Publication date
JPH05166737A (en) 1993-07-02

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