JP2752824B2 - Vertical vacuum deposition equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical vacuum vapor deposition apparatus, and more particularly to an apparatus for manufacturing an LSI, which suppresses dust generation which causes a low yield, and sufficiently supplies gas in a reaction chamber. The present invention relates to a vertical vacuum vapor deposition apparatus that can be replaced.

[0002]

2. Description of the Related Art A conventional vertical reduced pressure vapor deposition apparatus is shown in FIG.
As shown in FIG.
The apparatus mainly includes an internal quartz tube 2, an inert gas introduction tube 4 connected to a flange 14, a reaction gas supply tube 5, and an exhaust tube 9.

[0003] An inert gas supplied when the quartz boat 6 on which the wafer 8 is mounted enters the furnace is supplied from the flange 14 via the inert gas introduction pipe 4 to the space between the outer quartz tube 1 and the inner quartz tube 2. And flows downward from the upper part in the reaction chamber. In FIG. 3, 3 is a heater, 7 is a hatch, 10 is a valve, 11 is a booster pump, and 12 is a dry pump.

[0004]

By the way, in the above-mentioned conventional vertical decompression vapor phase growth apparatus, as shown in FIG. 3, an inert gas introduction pipe 4 is connected to a flange 14, and a quartz bobbin is formed. Since the inert gas is supplied from the flange 14 into the reaction chamber when the furnace 6 enters the furnace, there is a problem that the reaction product deposited inside the flange 14 is wound up along with the inert gas.

Accordingly, an object of the present invention is to provide a vertical type reduced pressure vapor phase growth apparatus which solves the above-mentioned problems, and more specifically, prevents a reaction product from being rolled up inside a flange,
It is possible to suppress dust generation that causes low yield , and
And to provide a vertical pressure chemical vapor deposition apparatus that obtained sufficiently gas replacement reaction chamber.

[0006]

In order to achieve the above object, the present invention is characterized in that an inert gas supply pipe is provided between an external quartz pipe and an internal quartz pipe. Connect the upstream and downstream sides of the valve and introduce inert gas
Auxiliary piping for operating and exhausting air at times is provided, whereby gas can be replaced between the external quartz tube and the internal quartz tube, and the gas inside the reaction chamber can be sufficiently replaced. Features.

That is, the present invention relates to a vertical decompression vapor phase growth apparatus comprising a reaction chamber having an external quartz tube and an internal quartz tube, a reaction gas supply tube, an inert gas introduction tube, and an exhaust tube. established the gas supply pipe between the external quartz tube and the inner quartz tube, the outlet having a plurality of gas ejection holes on the tip of the inert gas supply pipe quartz ball - provided the true top of bets, and the Connect the upstream and downstream sides of the exhaust pipe valve.
The invention is also directed to a vertical reduced-pressure vapor deposition apparatus characterized by providing an auxiliary pipe for operating when introducing an inert gas and sufficiently exhausting the gas.

[0008]

Next, an embodiment of the present invention will be described in detail with reference to FIG. FIG. 1 is a vertical sectional view of a vertical reduced pressure vapor deposition apparatus according to one embodiment of the present invention.
When the quartz boat 6 carrying the gas enters the furnace, an inert gas supply pipe 15 for supplying an inert gas (for example, nitrogen) is installed between the outer quartz pipe 1 and the inner quartz pipe 2, and the inert gas is supplied. Supply pipe 1
Outlet 16 having a plurality of gas discharge holes at the tip of 5
Is provided directly above the quartz boat 6.
By arranging such an inert gas supply pipe 15, it is possible to prevent the reaction products deposited on the flange 14 from being wound up.

Further, the exhaust pipe 9 is located on the upstream side of the valve 10.
This is a device provided with an auxiliary pipe 13 connecting the downstream side , so that when the inert gas is introduced, exhaust is performed through the auxiliary pipe 13.
In addition, the inert gas can be sufficiently replaced between the outer quartz tube 1 and the inner quartz tube 2. That is, the wafer 8 is mounted
When entering the quartz board 6 into the vertical vacuum deposition apparatus,
Open the inert gas introduction pipe 4 and simultaneously open the auxiliary pipe 13
(Valve 10 is closed). And the quartz boat
Inert gas is introduced from outlet 16 provided directly above 6
Then, through the quartz board 6 on which the wafer 8 is mounted,
Exhaust well through 13. As a result, inert gas
During the introduction of the silicon oxide, a natural oxide film is generated on the surface of the wafer 8.
Can be prevented. ( Note that in FIG. 1, 3
3 is a heater, 4 is an inert gas introduction pipe, 5 is a reaction gas supply pipe, 7 is a hatch, 10 is a valve, 11 is a booster pump, and 12 is a dry pump, as shown in FIG. It is the same as the conventional device. ) Here, vertical down shown in FIG. 1
Explaining the "vapor phase growth step" of the high pressure vapor phase epitaxy apparatus,
It is as follows. (1) A quartz board on which a wafer is mounted is vertically
When entering the furnace, "reactive gas supply pipe 5 → closed""inert gas
Inlet pipe 4 → open ”, valve 10 → closed,“ auxiliary pipe 13 →
Open. " (Thus, when introducing inert gas,
A natural oxide film is formed on the surface of the wafer 8 by the pipe 13.
Inert gas replacement is sufficient to prevent
U. ) (2) gas phase during the growth, the "reaction gas supply pipe 5 → Open,""inert
Gas inlet pipe 4 → closed ”Valve 10 → opened” Auxiliary pipe 13
→ Close ”.

Next, the effect of suppressing dust generation of the apparatus of the present invention is shown in FIG.
It will be described based on. FIG. 2 is a diagram in which the number of particles generated in the growth of an oxide film when the apparatus of the present invention is used is compared with the number of particles generated when the conventional apparatus is used. In FIG. 2, the vertical axis represents the number of particles generated per wafer, and the horizontal axis represents the number of times of processing. According to FIG. 2, the number of particles generated by the apparatus of the present invention is stable at an extremely small level as compared with the conventional apparatus. You can understand that you are doing.

[0011]

According to the present invention, as described in detail above, an inert gas supply pipe is installed between an external quartz pipe and an internal quartz pipe,
By providing a blowout port having a plurality of gas discharge holes at the end of the inert gas supply pipe just above the quartz boat,
When the quartz boat enters the furnace, the inert gas flowing in the inert gas supply pipe is prevented from rolling up the reaction products inside the flange, and the effect of suppressing dust generation which causes a low yield is produced. Further, the present invention relates to an exhaust pipe on the upstream side of a valve.
Connect downstream and operate when introducing inert gas to exhaust sufficiently
By providing an auxiliary pipe for performing the gas exchange, the gas exchange between the external quartz tube and the internal quartz tube can be performed, and the gas inside the reaction chamber can be sufficiently exchanged.
(The generation of an oxide film can be prevented) .

[Brief description of the drawings]

FIG. 1 is a vertical sectional view of a vertical reduced pressure vapor phase epitaxy apparatus according to one embodiment of the present invention.

FIG. 2 is a diagram illustrating a comparison between the number of particles generated in the growth of an oxide film when the apparatus of the present invention is used and the number of particles generated when a conventional apparatus is used.

FIG. 3 is a longitudinal sectional view of a conventional vertical reduced-pressure vapor deposition apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 External quartz tube 2 Inner quartz tube 3 Heater 4 Inert gas introduction tube 5 Reaction gas supply tube 6 Quartz boat 7 Hatch 8 Wafer 9 Exhaust piping 10 Valve 11 Booster pump 12 Dry pump 13 Auxiliary piping 14 Flange 15 Inert gas supply pipe 16 Outlet

Claims (1)

(57) [Claims] 1. A vertical reduced-pressure vapor phase growth apparatus comprising a reaction chamber having an external quartz tube and an internal quartz tube, a reaction gas supply tube, an inert gas introduction tube, and an exhaust tube. placed between the outer quartz tube and the inner quartz tube, the outlet having a plurality of gas ejection holes on the tip of the inert gas supply pipe quartz ball - provided the true top of bets, and the exhaust pipe valve The upstream and downstream sides of the system and introduce inert gas
A vertical reduced-pressure vapor phase growth apparatus characterized in that an auxiliary pipe for operating and evacuating sufficiently is provided .