JP3303357B2 - Gas phase chemical reactor - Google Patents
Gas phase chemical reactorInfo
- Publication number
- JP3303357B2 JP3303357B2 JP26843392A JP26843392A JP3303357B2 JP 3303357 B2 JP3303357 B2 JP 3303357B2 JP 26843392 A JP26843392 A JP 26843392A JP 26843392 A JP26843392 A JP 26843392A JP 3303357 B2 JP3303357 B2 JP 3303357B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- gas
- shower head
- valve
- vacuum vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体の形成過程にお
いて気相または固体の表面に隣接する気相で化学反応を
発生させる化学反応装置に係り、特に、装置の稼働効率
の向上に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical reaction apparatus for generating a chemical reaction in a gas phase or a gas phase adjacent to a surface of a solid in the process of forming a semiconductor, and more particularly to an improvement in operation efficiency of the apparatus.
【０００２】[0002]
【従来の技術】気相化学反応装置の例として、ここでは
従来技術として気相成長装置を例にとり、特開平2−187
018 号公報に示される気相成長装置を例に取り上げて説
明する。図４はその装置のブロック図である。そのサイ
クルは、ウェハ３を真空容器４内のサセプタ１に導入
後、真空容器４内のガスを真空排気部６１を用いて真空
排気配管６を経由して真空排気する。次に不活性ガスを
ガス供給部８からガス供給配管８１を通して真空容器４
に導入する。真空容器がある所定の圧力になったらガス
の供給をやめ、再度、真空容器４内のガスを真空排気部
６１を用いて真空排気配管６を経由して真空排気する。
この過程を数回繰り返しガス置換した後に真空容器４内
のガスを真空排気部６１で真空排気配管６を経由して真
空排気する。次に、反応ガスをガス供給部８からガス供
給配管８１を通し、混合室２２に導入し、シャワー・ヘ
ッド２１からサセプタ１上に配置されヒータ１１で加熱
されたウェハ３に供給する。気相成長で消費しされなか
ったガスや反応にて発生したガスは真空排気部６１を用
いて真空排気配管６を経由して真空排気される。更にこ
のガスはガス処理配管６３を経由してガス処理部７で安
全な形に処理された後に排気管７１から放出される。2. Description of the Related Art As an example of a gas phase chemical reaction apparatus, a conventional example is a gas phase growth apparatus.
The vapor phase growth apparatus disclosed in Japanese Patent Publication No. 018 will be described as an example. FIG. 4 is a block diagram of the device. In the cycle, after the wafer 3 is introduced into the susceptor 1 in the vacuum vessel 4, the gas in the vacuum vessel 4 is evacuated via the vacuum exhaust pipe 6 using the vacuum exhaust unit 61. Next, an inert gas is supplied from the gas supply unit 8 through the gas supply pipe 81 to the vacuum vessel 4.
To be introduced. When the vacuum container reaches a predetermined pressure, the supply of gas is stopped, and the gas in the vacuum container 4 is evacuated again via the vacuum exhaust pipe 6 using the vacuum exhaust unit 61.
After repeating this process several times, the gas in the vacuum vessel 4 is evacuated by the evacuating unit 61 via the evacuating pipe 6. Next, the reaction gas is introduced from the gas supply unit 8 through the gas supply pipe 81 into the mixing chamber 22, and is supplied from the shower head 21 to the wafer 3 disposed on the susceptor 1 and heated by the heater 11. Gases not consumed in the vapor phase growth or gases generated by the reaction are evacuated using the evacuating unit 61 via the evacuating pipe 6. Further, this gas is discharged from the exhaust pipe 71 after being processed in a safe form in the gas processing section 7 via the gas processing pipe 63.
【０００３】この後、反応ガスの供給を停止して真空容
器４内のガスを真空排気部６１を用いて真空排気配管６
を経由して真空排気する。次に、不活性ガスをガス供給
部８からガス供給配管８１を通して真空容器４に導入す
る。真空容器がある所定の圧力になったらガスの供給を
やめ、再度、真空容器４内のガスを真空排気部６１を用
いて真空排気配管６を経由して真空排気する。この過程
を数回繰り返しガス置換した後に真空容器４内のガスを
真空排気部６１で真空排気配管６を経由して真空排気す
る。更に、不活性ガスを真空容器４が大気圧になるまで
ガス供給部８からガス供給配管８１を通して真空容器４
に導入する。ウェハ３を取り出し次のウェハ３を真空容
器４に導入する。これが気相成長装置のサイクルであ
る。After that, the supply of the reaction gas is stopped, and the gas in the vacuum vessel 4 is evacuated to a vacuum exhaust pipe 6 by using a vacuum exhaust unit 61.
Evacuate via. Next, an inert gas is introduced from the gas supply unit 8 into the vacuum vessel 4 through the gas supply pipe 81. When the vacuum container reaches a predetermined pressure, the supply of gas is stopped, and the gas in the vacuum container 4 is evacuated again via the vacuum exhaust pipe 6 using the vacuum exhaust unit 61. After repeating this process several times, the gas in the vacuum vessel 4 is evacuated by the evacuating unit 61 via the evacuating pipe 6. Further, the inert gas is supplied from the gas supply unit 8 through the gas supply pipe 81 until the vacuum container 4 reaches the atmospheric pressure.
To be introduced. The wafer 3 is taken out and the next wafer 3 is introduced into the vacuum container 4. This is the cycle of the vapor phase growth apparatus.
【０００４】ここで従来技術では真空容器４内のガスを
真空排気部６１を用いて排気する際には混合室２２内の
ガスがシャワー・ヘッド２１のコンダクタンスの小さい
小孔を通して排気されるため排気に著しく時間がかか
る。このため装置の稼働効率を著しく低下させる要因と
なっている。Here, in the prior art, when the gas in the vacuum chamber 4 is evacuated using the vacuum evacuating section 61, the gas in the mixing chamber 22 is evacuated through small holes of the shower head 21 having small conductance. Takes a significant amount of time. This is a factor that significantly reduces the operation efficiency of the apparatus.
【０００５】[0005]
【発明が解決しようとする課題】上記技術では、真空容
器４内のガスを真空排気部６１を用いてガス置換等の時
に排気を行う際には混合室２２内のガスがシャワー・ヘ
ッド２１のコンダクタンスの小さい小孔を通して排気さ
れるため排気に著しく時間がかかるので、装置のの稼働
効率を著しく低下すると言う問題がある。In the above-mentioned technique, when the gas in the vacuum chamber 4 is evacuated by using the vacuum evacuating section 61 at the time of gas replacement or the like, the gas in the mixing chamber 22 is exhausted by the shower head 21. Since the air is exhausted through the small hole having a small conductance, it takes a long time to exhaust the air, so that there is a problem that the operation efficiency of the apparatus is significantly reduced.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成する為
に、本発明は、例えば、真空容器と、この真空容器の下
方に配置されヒータを有するサセプタと、このサセプタ
に対向し前記真空容器内の上方に配置されたシャワーヘ
ッド部と、このシャワーヘッド部に反応ガスを供給する
ガス供給部と、この真空容器内を真空排気する真空ポン
プを有する真空排気装置とを備え、このガス供給部から
シャワーヘッド部を介して供給された反応ガスを用いて
サセプタ上に載置したウエハ表面で気相成長させる気相
化学反応装置において、前記シャワーヘッド部は、真空
容器の上部を区画し前記サセプタに対向する、多数の小
孔が形成されたシャワーヘッドと、このシャワーヘッド
の上方であって真空容器との間に形成さた混合室とを有
し、この混合室は前記真空排気装置に第１のバルブを介
して連通しており、前記真空容器の底部は第２のバルブ
を介して真空排気装置に連通しており、反応ガスがウエ
ハに供給される際には前記第１のバルブは閉止され、前
記第２のバルブは開され、前記反応ガスの供給が終了し
たら前記真空容器と前記シャワーヘッド部を共に排気す
るために、開された前記第２バルブに加えて更に前記第
１のバルブを開するよう制御されることを特徴とする。 [MEANS FOR SOLVING THE PROBLEMS] To achieve the above object
In addition, the present invention provides, for example, a vacuum container and a device under the vacuum container.
Susceptor having a heater disposed therein
To the shower, which is located above and
And a reaction gas to the shower head
Gas supply unit and vacuum pump for evacuating the vacuum container
And a vacuum exhaust device having a
Using the reaction gas supplied through the shower head
Vapor phase grown on wafer surface mounted on susceptor
In the chemical reaction device, the shower head section is a vacuum
A number of small compartments defining the top of the container and facing the susceptor
Shower head with holes formed and this shower head
And a mixing chamber formed between the vacuum chamber and the
The mixing chamber is connected to the evacuation device via a first valve.
And the bottom of the vacuum vessel is a second valve
The reaction gas communicates with the evacuation system through the
When supplied to c, the first valve is closed and
The second valve is opened and the supply of the reaction gas is terminated.
Evacuate both the vacuum vessel and the shower head
In addition to the opened second valve, the
The first valve is controlled to be opened.
【０００７】[0007]
【作用】真空容器の排気の際にはシャワー・ヘッドはコ
ンダクタンスの小さなシャワー・ヘッドの小孔を使って
のみの排気ではなく、コンダクタンスの大きなシャワー
・ヘッド補助排気機構も用いて排気を行うため、シャワ
ー・ヘッド部内のガスは速やかに排気される。このため
排気時間の著しい短縮が実現されるので装置の稼働効率
が向上出来る。[Function] When the vacuum vessel is evacuated, the shower head exhausts not only using the small hole of the shower head with small conductance but also using the auxiliary exhaust mechanism of the shower head with large conductance. Gas in the shower head is quickly exhausted. As a result, the evacuation time can be significantly reduced, and the operation efficiency of the apparatus can be improved.
【０００８】[0008]
【実施例】以下、本発明の一実施例を図１及び図２を参
照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS.
【０００９】図１は、本発明の一実施例のブロック図で
ある。FIG. 1 is a block diagram of one embodiment of the present invention.
【００１０】図１では、１はサセプタ、２はシャワー・
ヘッド部、３はウェハ、４は真空容器、５はシャワー・
ヘッド排気配管、６は真空排気管、７はガス処理部、８
はガス供給部、１０は真空計、１１はヒータ、２１はシ
ャワー・ヘッド、２２は混合室、２３はマニホールド、
５１はシャワー・ヘッド排気バルブ、６１は真空排気
部、６２は排気孔、６３はガス処理配管、６４は真空排
気バルブ、７１は排気管、８１はガス供給配管を示す。In FIG. 1, 1 is a susceptor, 2 is a shower
Head part, 3 for wafer, 4 for vacuum vessel, 5 for shower
Head exhaust pipe, 6 is a vacuum exhaust pipe, 7 is a gas processing section, 8
Is a gas supply unit, 10 is a vacuum gauge, 11 is a heater, 21 is a shower head, 22 is a mixing chamber, 23 is a manifold,
51 is a shower head exhaust valve, 61 is a vacuum exhaust unit, 62 is an exhaust hole, 63 is a gas processing pipe, 64 is a vacuum exhaust valve, 71 is an exhaust pipe, and 81 is a gas supply pipe.
【００１１】以下、本発明の作用を説明する。The operation of the present invention will be described below.
【００１２】ウェハ３を真空容器４内のサセプタ１に導
入後、真空容器４内のガスを真空排気部６１を用いて真
空排気配管６を経由して真空排気する。この際、シャワ
ー・ヘッド排気バルブ５１を開いて混合室２２内のガス
を主としてシャワー・ヘッド排気配管５で排気を行う。
排気時間はシャワー・ヘッド排気配管５のコンダクタン
スがシャワー・ヘッド部２に設けられた小孔のコンダク
タンスに較ベて著しく大きいため、このシャワー・ヘッ
ド排気配管５を使わないで排気した場合に較ベて著しく
短縮される。排気時間は排気されるべき気体の圧力，体
積，排気配管のコンダクタンスと真空排気系の能力など
によって変化する。次に、その一例を示す。ここでは混
合室２２の体積を１５００ccとして大気圧状態のガスが
満たされているものとする。シャワー・ヘッド部２の小
孔の総面積は０.３５cm2で長さは２cmとし、シャワー・
ヘッド排気配管５の断面積は４.９cm2で長さは５０cmと
する。排気用の真空ポンプは速度型のドライ・ポンプが
つながっているものとして排気速度は１５００ｌ／min
とする。After the wafer 3 is introduced into the susceptor 1 in the vacuum vessel 4, the gas in the vacuum vessel 4 is evacuated using the evacuating section 61 via the evacuating pipe 6. At this time, the shower head exhaust valve 51 is opened, and the gas in the mixing chamber 22 is exhausted mainly by the shower head exhaust pipe 5.
During the evacuation time, the conductance of the shower head exhaust pipe 5 is significantly larger than the conductance of the small hole provided in the shower head portion 2, so that the exhaust time is lower than when the exhaust is performed without using the shower head exhaust pipe 5. Significantly reduced. The evacuation time varies depending on the pressure and volume of the gas to be evacuated, the conductance of the exhaust pipe, the capacity of the vacuum evacuation system, and the like. Next, an example is shown. Here, it is assumed that the volume of the mixing chamber 22 is 1500 cc and the gas in the atmospheric pressure state is filled. The total area of the small holes of the shower head portion 2 and 2cm length at 0.35 cm 2, shower
The cross-sectional area of the head exhaust pipe 5 is 4.9 cm 2 and the length is 50 cm. The pumping speed is 1500 l / min assuming that a speed type dry pump is connected to the vacuum pump.
And
【００１３】その場合の排気時間と圧力の変化を図２に
示す。縦軸は混合室２２内の圧力、横軸は排気を始めて
からの時間である。Ｉの曲線はシャワー・ヘッド排気配
管５で排気を行った場合、IIの曲線はシャワー・ヘッド
部２に設けられた小孔のみで排気した場合の変化であ
る。この例では混合室２２の圧力が１０~3Torrまでシャ
ワー・ヘッド部２に設けられた小孔のみで排気した場合
には約１２分、シャワー・ヘッド排気配管５で排気を行
った場合には約６.３ 秒となり約百分の一強程度に排気
時間が著しく短縮されるのが判る。FIG. 2 shows changes in the evacuation time and pressure in that case. The vertical axis represents the pressure in the mixing chamber 22, and the horizontal axis represents the time from the start of evacuation. The curve I indicates a change when the exhaust is performed by the shower head exhaust pipe 5, and the curve II indicates a change when the exhaust is performed only by the small holes provided in the shower head 2. In this example, when the pressure in the mixing chamber 22 is reduced to 10 to 3 Torr using only the small holes provided in the shower head unit 2, the pressure is reduced to about 12 minutes. It can be seen that the evacuation time is remarkably reduced to about 6.3 seconds, which is about one-hundredth.
【００１４】次に不活性ガスをガス供給部８からガス供
給配管８１を通して真空容器４に導入する。真空容器が
ある所定の圧力になったらガスの供給をやめ、再度真空
容器４内のガスを真空排気部６１を用いて真空排気配管
６を経由して真空排気する。この際、シャワー・ヘッド
排気バルブ５１を開いて混合室２２内のガスを主として
シャワー・ヘッド排気配管５で排気を行う。この過程を
数回繰り返しガス置換した後に真空容器４内のガスを真
空排気部６１で真空排気配管６を経由して真空排気す
る。この際、シャワー・ヘッド排気バルブ５１を開いて
混合室２２内のガスを主としてシャワー・ヘッド排気配
管５で排気を行う。次にシャワー・ヘッド排気バルブ５
１を閉じる。その後、反応ガスをガス供給部８からガス
供給配管８１を通し、混合室２２に導入し、シャワー・
ヘッド２１からサセプタ１上に配置されヒータ１１で加
熱されたウェハ３に供給する。気相成長で消費しされな
かったガスや反応で発生したガスは真空排気部６１を用
いて真空排気配管６を経由して真空排気される。更に、
このガスはガス処理配管６３を経由してガス処理部７で
安全な形に処理された後に排気管７１から放出される。Next, an inert gas is introduced from the gas supply section 8 into the vacuum vessel 4 through the gas supply pipe 81. When the pressure in the vacuum container reaches a predetermined pressure, the supply of gas is stopped, and the gas in the vacuum container 4 is evacuated again using the evacuating unit 61 via the evacuating pipe 6. At this time, the shower head exhaust valve 51 is opened, and the gas in the mixing chamber 22 is exhausted mainly by the shower head exhaust pipe 5. After repeating this process several times, the gas in the vacuum vessel 4 is evacuated by the evacuating unit 61 via the evacuating pipe 6. At this time, the shower head exhaust valve 51 is opened, and the gas in the mixing chamber 22 is exhausted mainly by the shower head exhaust pipe 5. Next, the shower head exhaust valve 5
Close 1. Thereafter, the reaction gas is introduced from the gas supply unit 8 through the gas supply pipe 81 into the mixing chamber 22, and the shower
The wafer 21 is supplied from the head 21 to the wafer 3 placed on the susceptor 1 and heated by the heater 11. The gas not consumed in the vapor phase growth or the gas generated by the reaction is evacuated using the evacuating unit 61 via the evacuating pipe 6. Furthermore,
This gas is discharged from the exhaust pipe 71 after being processed in a safe form by the gas processing section 7 via the gas processing pipe 63.
【００１５】この後、反応ガスの供給を停止して真空容
器４内のガスを真空排気部６１を用いて真空排気配管６
を経由して真空排気する。この際、シャワー・ヘッド排
気バルブ５１を開いて混合室２２内のガスを主としてシ
ャワー・ヘッド排気配管５で排気を行う。次に不活性ガ
スをガス供給部８からガス供給配管８１を通して真空容
器４に導入する。真空容器がある所定の圧力になったら
ガスの供給をやめ、再度、真空容器４内のガスを真空排
気部６１を用いて真空排気配管６を経由して真空排気す
る。この際、シャワー・ヘッド排気バルブ５１を開いて
混合室２２内のガスを主としてシャワー・ヘッド排気配
管５で排気を行う。この過程を数回繰り返しガス置換し
た後に真空容器４内のガスを真空排気部６１で真空排気
配管６を経由して真空排気する。この際にもシャワー・
ヘッド排気バルブ５１を開いて混合室２２内のガスを主
としてシャワー・ヘッド排気配管５で排気を行う。更
に、不活性ガスを真空容器４が大気圧になるまでガス供
給部８からガス供給配管８１を通して真空容器４に導入
する。ウェハ３を取り出し次のウェハ３を真空容器４に
導入する。Thereafter, the supply of the reaction gas is stopped, and the gas in the vacuum vessel 4 is evacuated to the vacuum exhaust pipe 6 by using the vacuum exhaust unit 61.
Evacuate via. At this time, the shower head exhaust valve 51 is opened, and the gas in the mixing chamber 22 is exhausted mainly by the shower head exhaust pipe 5. Next, an inert gas is introduced into the vacuum vessel 4 from the gas supply unit 8 through the gas supply pipe 81. When the vacuum container reaches a predetermined pressure, the supply of gas is stopped, and the gas in the vacuum container 4 is evacuated again via the vacuum exhaust pipe 6 using the vacuum exhaust unit 61. At this time, the shower head exhaust valve 51 is opened, and the gas in the mixing chamber 22 is exhausted mainly by the shower head exhaust pipe 5. After repeating this process several times, the gas in the vacuum vessel 4 is evacuated by the evacuating unit 61 via the evacuating pipe 6. Also in this case the shower
By opening the head exhaust valve 51, the gas in the mixing chamber 22 is exhausted mainly by the shower head exhaust pipe 5. Further, an inert gas is introduced from the gas supply unit 8 into the vacuum container 4 through the gas supply pipe 81 until the vacuum container 4 reaches the atmospheric pressure. The wafer 3 is taken out and the next wafer 3 is introduced into the vacuum container 4.
【００１６】以上により排気の過程を長引かせていた混
合室２２の排気が速やかに行われるので、装置の稼働効
率が著しく向上する。また本実施例では比較的少ない構
成要素の追加で稼働率の著しい向上を図れる。Since the evacuation of the mixing chamber 22, which has been prolonged as described above, is quickly performed, the operation efficiency of the apparatus is remarkably improved. In this embodiment, the operation rate can be significantly improved by adding a relatively small number of components.
【００１７】図３は本発明の他の実施例に係る気相成長
装置のブロック図である。FIG. 3 is a block diagram of a vapor phase growth apparatus according to another embodiment of the present invention.
【００１８】本実施例では、シャワー・ヘッド排気機構
はシャワー・ヘッド部２の中に設けられたシャワー・ヘ
ッド排気バルブ５１からなっている。このシャワー・ヘ
ッド排気バルブ５１の動作は図１の実施例のものと同じ
である。この機構でも排気の過程を長引かせていた混合
室２２の排気が速やかに行えるので、装置の稼働率の著
しい向上を図れる。本実施例でも図１の実施例の場合と
同様に、比較的少ない構成要素の追加で稼働率の著しい
向上を図れる。In this embodiment, the shower head exhaust mechanism comprises a shower head exhaust valve 51 provided in the shower head section 2. The operation of the shower head exhaust valve 51 is the same as that of the embodiment of FIG. Also in this mechanism, the evacuation of the mixing chamber 22, which has prolonged the evacuation process, can be quickly performed, so that the operation rate of the apparatus can be significantly improved. In this embodiment, as in the embodiment of FIG. 1, the operation rate can be remarkably improved by adding a relatively small number of components.
【００１９】[0019]
【発明の効果】本発明によれば、排気の過程を長引かせ
ていたシャワー・ヘッド部の排気がシャワー・ヘッド排
気機構により速やかに行われ、排気時間が著しく短縮さ
れる。そのため装置の稼働効率が著しく向上する。According to the present invention, the evacuation of the shower head portion, which has prolonged the evacuation process, is quickly performed by the shower head evacuation mechanism, and the evacuation time is significantly reduced. As a result, the operating efficiency of the device is significantly improved.
【図１】本発明の一実施例に係る気相成長装置のブロッ
ク図。FIG. 1 is a block diagram of a vapor phase growth apparatus according to one embodiment of the present invention.
【図２】真空排気の時間と圧力の特性図。FIG. 2 is a characteristic diagram of evacuation time and pressure.
【図３】本発明の他の実施例に係る気相成長装置のブロ
ック図。FIG. 3 is a block diagram of a vapor phase growth apparatus according to another embodiment of the present invention.
【図４】従来の気相成長装置のブロック図。FIG. 4 is a block diagram of a conventional vapor phase growth apparatus.
１…サセプタ、２…シャワー・ヘッド部、３…ウェハ、
４…真空容器、５…シャワー・ヘッド排気配管、６…真
空排気管、７…ガス処理部、８…ガス供給部、１０…真
空計、１１…ヒータ、２１…シャワー・ヘッド、２２…
混合室、２３…マニホールド、５１…シャワー・ヘッド
排気バルブ、６１…真空排気部、６２…排気孔、６３…
ガス処理配管、６４…真空排気バルブ、７１…排気管、
８１…ガス供給配管。1 ... susceptor, 2 ... shower head, 3 ... wafer,
4 vacuum chamber, 5 shower head exhaust pipe, 6 vacuum exhaust pipe, 7 gas processing section, 8 gas supply section, 10 vacuum gauge, 11 heater, 21 shower head, 22
Mixing chamber, 23: manifold, 51: shower head exhaust valve, 61: vacuum exhaust unit, 62: exhaust hole, 63 ...
Gas processing piping, 64: vacuum exhaust valve, 71: exhaust pipe,
81: gas supply pipe.
Claims (1)
れヒータを有するサセプタと、 このサセプタに対向し前記真空容器内の上方に配置され
たシャワーヘッド部と、 このシャワーヘッド部に反応ガスを供給するガス供給部
と、 この真空容器内を真空排気する真空ポンプを有する真空
排気装置とを備え、 このガス供給部からシャワーヘッド部を介して供給され
た反応ガスを用いてサセプタ上に載置したウエハ表面で
気相成長させる気相化学反応装置において、 前記シャワーヘッド部は、真空容器の上部を区画し前記
サセプタに対向する、多数の小孔が形成されたシャワー
ヘッドと、 このシャワーヘッドの上方であって真空容器との間に形
成さた混合室とを有し、この混合室は前記真空排気装置
に第１のバルブを介して連通しており、 前記真空容器の底部は第２のバルブを介して真空排気装
置に連通しており、反応ガスがウエハに供給される際には前記第１のバルブ
は 閉止され、前記第２のバルブは開され、 前記反応ガスの供給が終了したら前記真空容器と前記シ
ャワーヘッド部を共に排気するために、開された前記第
２バルブに加えて更に前記第１のバルブを開するよう制
御される ことを特徴とする気相化学反応装置。1. A vacuum vessel, a susceptor disposed below the vacuum vessel and having a heater, a shower head opposed to the susceptor and disposed above the vacuum vessel, and a reaction gas in the shower head. And a vacuum pumping device having a vacuum pump for evacuating the inside of the vacuum vessel, and mounted on a susceptor using a reaction gas supplied from the gas supplying unit via a shower head. A vapor-phase chemical reaction apparatus for performing vapor-phase growth on the surface of a placed wafer, wherein the shower head section defines an upper portion of a vacuum vessel and faces the susceptor, and has a plurality of small holes formed therein; And a mixing chamber formed between the vacuum chamber and the vacuum chamber, and the mixing chamber communicates with the evacuation apparatus via a first valve, The bottom of the vacuum vessel communicates with a vacuum exhaust device via a second valve, and when the reaction gas is supplied to the wafer, the first valve is used.
Is closed, the second valve is opened, and when the supply of the reaction gas is completed, the vacuum container and the system are closed.
To open the shower head together.
The first valve is opened in addition to the two valves.
A gas phase chemical reaction device characterized by being controlled .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26843392A JP3303357B2 (en) | 1992-10-07 | 1992-10-07 | Gas phase chemical reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26843392A JP3303357B2 (en) | 1992-10-07 | 1992-10-07 | Gas phase chemical reactor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06120143A JPH06120143A (en) | 1994-04-28 |
| JP3303357B2 true JP3303357B2 (en) | 2002-07-22 |
Family
ID=17458428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26843392A Expired - Fee Related JP3303357B2 (en) | 1992-10-07 | 1992-10-07 | Gas phase chemical reactor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3303357B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4180948B2 (en) * | 2003-03-24 | 2008-11-12 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and gas nozzle |
| US7408225B2 (en) * | 2003-10-09 | 2008-08-05 | Asm Japan K.K. | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms |
| US7273526B2 (en) * | 2004-04-15 | 2007-09-25 | Asm Japan K.K. | Thin-film deposition apparatus |
| JP4686319B2 (en) * | 2004-09-28 | 2011-05-25 | 株式会社 セルバック | CVD equipment |
| US8801856B2 (en) * | 2009-09-08 | 2014-08-12 | Universal Display Corporation | Method and system for high-throughput deposition of patterned organic thin films |
-
1992
- 1992-10-07 JP JP26843392A patent/JP3303357B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06120143A (en) | 1994-04-28 |
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