CN117385338A - Low-pressure chemical vapor deposition reactor with closed inner cylinder structure - Google Patents
Low-pressure chemical vapor deposition reactor with closed inner cylinder structure Download PDFInfo
- Publication number
- CN117385338A CN117385338A CN202311498796.3A CN202311498796A CN117385338A CN 117385338 A CN117385338 A CN 117385338A CN 202311498796 A CN202311498796 A CN 202311498796A CN 117385338 A CN117385338 A CN 117385338A
- Authority
- CN
- China
- Prior art keywords
- inner cylinder
- closed
- injector
- closed inner
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004518 low pressure chemical vapour deposition Methods 0.000 title claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 8
- 239000010453 quartz Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000006227 byproduct Substances 0.000 abstract description 5
- 238000012423 maintenance Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 9
- 239000000047 product Substances 0.000 description 5
- 206010040844 Skin exfoliation Diseases 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229940095676 wafer product Drugs 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
Abstract
The invention relates to a low-pressure chemical vapor deposition reactor with a closed inner cylinder structure, wherein an outer cover is a tubular container, the inside of the outer cover is a closed inner cylinder, the closed inner cylinder is of a closed tubular structure, a top convex dome is arranged on one side of the closed inner cylinder, a columnar injector communicated with an outer air pipe is arranged on one side of the closed inner cylinder, gas is uniformly fed into the inner cavity of the closed inner cylinder from the columnar injector, an exhaust port is arranged at a connecting flange at the bottom of the other side of the closed inner cylinder far from the columnar injector, and residual gas and reaction byproducts uniformly distributed in the inner cavity of the closed inner cylinder are pumped out by an exhaust port communication pump system. The inner cylinder is designed into a closed structure, and SIC materials are used for replacing quartz materials. Not only improves uniformity of deposited film, but also improves surface particle condition and greatly reduces maintenance time.
Description
Technical Field
The invention relates to a semiconductor device manufacturing technology, in particular to a low-pressure chemical vapor deposition reactor with a closed inner cylinder structure.
Background
In semiconductor wafer manufacturing, low pressure chemical vapor deposition is an important process, in which reaction gases are introduced into a reactor, and the gases undergo chemical processes such as dissociation, adsorption, deposition and the like in a high-temperature and low-pressure environment to form a required film structure. The device system of the reactor Liner is an indispensable component, the structural type of the device can influence the gas distribution, the flow direction, the residence time and the like, thereby influencing the thickness, the uniformity, the refractive index and the electrical parameters of the wafer film, and the change of the structure can also bring about the change of the quantity of surface particles, thereby influencing the maintenance period of equipment.
In the prior art, as shown in fig. 1 and 2, a reactor 100 has a structure in which a Liner structure 101 is a cylindrical structure which is vertically straight-through, a quartz Tube 102 is covered on the outside of the Liner structure 101, the bottom is connected by a flange 103, a Main fold exhaust port 104 is arranged at the bottom of an intermediate space between the Liner and the Tube, and the exhaust port 104 is communicated with a Pump to extract exhaust gas to the outside. Reactant gas is injected into an injector 105 inside the cylinder, and the remaining reactant gas and byproducts are pumped out of the reactor from the intermediate region between the Liner and Tube, thereby creating a reaction chamber environment in which the gas flows in and out.
In the prior art, the Liner is mainly made of quartz, the adhesion stability of a quartz structure to a film is poor, the film is easy to peel off, a large number of particles are generated, frequent cleaning is needed, and the wafer manufacturing productivity is affected.
Disclosure of Invention
Aiming at the problem of poor adhesion stability of a film caused by the design of an open inner cylinder of a quartz structure of a reactor for low-pressure chemical vapor deposition film, the low-pressure chemical vapor deposition reactor with a closed inner cylinder structure is provided, the inner cylinder is designed into a closed structure, and SIC materials are used for replacing quartz materials.
The technical scheme of the invention is as follows: the low pressure chemical vapor deposition reactor with sealed inner cylinder structure has outer casing of tubular container, sealed inner cylinder inside the outer casing, sealed inner cylinder with top raised dome, cylindrical injector connected to the outer air pipe, gas feeding the gas into the inner cavity of the sealed inner cylinder, exhaust port in the bottom connecting flange of the other side of the sealed inner cylinder, and pump system to exhaust the residual gas and reaction by-product.
Preferably, the closed inner cylinder is made of SiC material.
Preferably, the columnar injector is in a combined mode of top and side surface openings, and gas is uniformly fed into the inner cavity of the closed inner cylinder in a high-temperature and low-pressure environment to participate in the reaction process of the surface of the wafer.
Preferably, the circular arcs of the outer cover and one side wall of the inner cylinder of the cylindrical reactor extend and protrude, a convex groove is formed in the cylindrical inner part of the inner cylinder, and the columnar injector is arranged in the convex groove and injects air into the inner cylinder.
Preferably, a nitrogen injector is provided between the outer shell and the inner tube of the cylindrical reactor, and nitrogen gas is injected through the nitrogen injector to ensure a positive pressure amount between the inner tube and the outer tube.
The invention has the beneficial effects that: the low-pressure chemical vapor deposition reactor with the closed inner cylinder structure not only improves uniformity of a deposited film, but also improves surface particle conditions and greatly reduces maintenance time.
Drawings
FIG. 1 is a schematic diagram of a prior art reactor structure;
FIG. 2 is a schematic view of an inner barrel in a conventional reactor;
FIG. 3 is a schematic view of a low pressure chemical vapor deposition reactor with a closed inner cylinder structure according to the present invention;
FIG. 4a is a schematic view of a low pressure chemical vapor deposition reactor having a closed inner cylinder structure according to the present invention;
FIG. 4b is a cross-sectional view of a low pressure chemical vapor deposition reactor A-A of the closed inner barrel configuration of the present invention;
FIG. 4c is a cross-sectional view of a low pressure chemical vapor deposition reactor B-B of the closed inner cylinder configuration of the present invention.
Detailed Description
The invention will now be described in detail with reference to the drawings and specific examples. The present embodiment is implemented on the premise of the technical scheme of the present invention, and a detailed implementation manner and a specific operation process are given, but the protection scope of the present invention is not limited to the following examples.
As shown in fig. 3, the reactor 200 is covered by a tubular container (Tube) 202, which is different from the existing reactor in that the inside is a closed inner cylinder (closed Liner) 201, the closed inner cylinder 201 is a closed tubular structure, the top of the closed inner cylinder 201 is provided with a convex dome, gas is injected into the closed Liner through a cylindrical Injector 205 (Injector) on the side of the closed inner cylinder 201, the gas diffuses and reacts in the closed Liner, and finally the residual gas and reaction byproducts are pumped out of the machine from the joint of the flange 203 at the bottom of the reactor 200. The column injector 205 uniformly feeds gas into the inner cavity of the closed inner cylinder 201 from one side surface of the closed inner cylinder 201, and the bottom of the other side of the closed inner cylinder 201 far from the column injector 205 is provided with an exhaust port 204 to extract residual gas and reaction byproducts uniformly distributed in the inner cavity of the closed inner cylinder 201. The column injector 205 is a combination of top and side openings and the gas is fed uniformly into the interior of the closed inner barrel 201 in a high temperature, low pressure environment. A short nitrogen injector 206 is located between the outer shroud (Tube) and the inner barrel (Close Liner), and a small amount of nitrogen is introduced to ensure a positive pressure environment between the inner and outer tubes, so that the reaction gas does not enter between the inner and outer tubes, and the maintenance period of the outer Tube is greatly prolonged.
In the low pressure chemical vapor deposition reactor with a closed inner cylinder structure as shown in fig. 4a and 4b, an outer cover 202 of the reactor with a cylindrical structure and a circular arc of one side wall of an inner cylinder 201 are coextensive Shen Tuchu (2021 and 2011), a convex groove is formed in the cylindrical interior of the inner cylinder 201 as shown in fig. 4c, a columnar injector 205 is placed, gas is injected into the inner cylinder 201, and the embodiment of the drawing is the columnar injector 205 formed by combining 3 injection units.
The top sealing structure can enable the fluid to be distributed more uniformly, and the uniformity of the surface of the product film is better; the reaction gas is deposited on the wafer and also deposited on the surface of the reactor, the Open link has the film attached to the inner surface and the outer surface, and the Close link structure only deposits the film on the inner surface, so that the film deposited on the surface is less than the Open link, the risk of peeling the film attached to the link is reduced, the particle condition of a product is improved, and the product yield is improved. The fewer the films are attached to the link, the corresponding improvement in the maintenance cycle of the Close link.
According to the invention, the Close link is made of SiC, so that compared with a traditional quartz structure of the Open link, the SiC can be better attached to a surface film, and cracks of the film are less likely to occur, so that the risk of integral peeling is brought, the particle number of a wafer product is influenced, and the product yield is improved.
The Close link is a cylindrical structure with an arc-shaped capping at the top, and gas is injected into the Close link cavity from the injector, penetrates through the whole Close link from top to bottom, and is extracted from the flange connection at the bottom of the Close link. The circular arc-shaped capping barrel-shaped structure can ensure that the whole internal temperature is more stable and is closer to the test temperature of the temperature control system; the circular arc-shaped capping barrel-shaped structure can influence the air flow distribution of the wafers on the internal wafer boat, thereby being more beneficial to the uniformity of the wafer film; the Close line structure can reduce the particle recharging of the Open line external test film peeling caused by similar gas reaction, reduce the surface particles of the wafer product, and meanwhile, the SiC material is more beneficial to the adhesion performance of the surface film of the reactor, so that the peeling of the surface film onto the wafer is reduced, and the product yield is improved.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (5)
1. The low pressure chemical vapor deposition reactor with sealed inner cylinder structure features that the sealed inner cylinder with sealed top raised dome and cylindrical injector connected to the outer air pipe is set inside the sealed inner cylinder, and the cylindrical injector sends gas into the inner cavity of the sealed inner cylinder.
2. The low pressure chemical vapor deposition reactor of claim 1, wherein the closed inner cylinder is made of SiC material.
3. The reactor of claim 1, wherein the cylindrical injector is a combination of top and side openings, and the gas is fed into the inner cavity of the inner cylinder uniformly in a high temperature and low pressure environment to participate in the reaction process of the wafer surface.
4. The low pressure chemical vapor deposition reactor with a closed inner cylinder structure according to claim 3, wherein the outer cover of the cylindrical reactor and a circular arc of one side wall of the inner cylinder are extended and projected, a convex groove is formed in the inner cylinder, and a cylindrical injector is arranged in the convex groove to inject air into the inner cylinder.
5. A low pressure chemical vapor deposition reactor having a closed inner tube structure according to claim 3, wherein a nitrogen injector is provided between the outer shell and the inner tube of the cylindrical reactor, and nitrogen gas is injected through the nitrogen injector to ensure a positive pressure amount between the inner tube and the outer tube.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310572796 | 2023-05-19 | ||
| CN2023105727967 | 2023-05-19 | ||
| CN202321229041 | 2023-05-19 | ||
| CN2023212290419 | 2023-05-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117385338A true CN117385338A (en) | 2024-01-12 |
Family
ID=89437332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311498796.3A Pending CN117385338A (en) | 2023-05-19 | 2023-11-10 | Low-pressure chemical vapor deposition reactor with closed inner cylinder structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117385338A (en) |
-
2023
- 2023-11-10 CN CN202311498796.3A patent/CN117385338A/en active Pending
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
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