KR20020034355A - Gas exhaust tube having means for heating - Google Patents

Abstract

PURPOSE: A gas exhausting pipe having a heating unit is provided to prevent a gas exhausting line from being stopped up and to eliminate particles, by making a heat radiating unit like hot wire built in the gas exhausting pipe. CONSTITUTION: The gas exhausting pipe(40) forms a path in which the gas inside a furnace is exhausted to the outside, connected to the furnace. The heating unit is built in a body(41) constituting an inner space. The heating unit is an electric hot wire(43). Connectors(45) for an electric connection are formed at both ends of the heat unit.

Description

Gas exhaust tube having means for heating

The present invention relates to a gas discharge pipe used as a gas discharge line of a semiconductor assembly process equipment, and more particularly, to a discharge line having a heating means to prevent adhesion of by-products in the pipe of the gas discharge line connected to the reactor. It is about.

The semiconductor device is a diffusion process for growing an oxide film on a silicon substrate, depositing impurities, infiltrating the deposited impurities into a silicon wafer to a desired depth, and a mask for selectively defining a protection portion of a portion to be etched or ion implanted. (B) a photolithography process to form a pattern of reticles on the wafer, an etching process to selectively remove thin films grown, deposited or deposited under the photoresist solution after the photoresist development by using gas or chemicals, and chemical vapor deposition It is manufactured by going through a unit process such as a thin film process for forming a specific film by using deposition, ion implantation or metal deposition.

Most semiconductor manufacturing apparatuses used for the progress of the semiconductor manufacturing process are equipped with a chamber or a furnace, and a predetermined gas necessary for the reaction is injected into the reaction chamber or the reactor and the gas is injected. The process takes place using a reaction with. The connection from the storage vessel or vacuum pump to the reaction chamber or reactor for supplying or discharging the used gas is by means of a gas line. As an example of a semiconductor manufacturing apparatus, a low pressure chemical vapor deposition apparatus will be introduced.

1 is a structural diagram of a low pressure chemical vapor deposition apparatus including a gas discharge pipe according to the prior art.

Referring to FIG. 1, the low pressure chemical vapor deposition apparatus 10 is sealed so that the wafer 20 loaded on the boat 17 may be deposited by a chemical reaction by a gas supplied through the gas nozzle 19. It has a structure, and can maintain atmospheric conditions, such as constant temperature and a vacuum. In the furnace 11, an outer tube 13 and an inner tube 15 made of high-purity quartz material are spaced at predetermined intervals, and the wafer 20 is placed into an inner space of the inner tube 15. Supplied.

The gas remaining in the reactor 11 after the chemical reaction by the gas introduced through the gas nozzle 19 is discharged to the outside of the reactor 11 through the gas discharge pipe 21. Gas inside the reactor 11 may be discharged by the operation of the vacuum pump 27 installed at one side of the gas discharge pipe 21, and the gas discharge pipe 21 is usually made of stainless material. A vacuum pump 27 is installed at one side of the gas discharge pipe 21 so that gas inside the reactor 11 may be forcibly discharged to the gas treatment device through the exhaust duct 29. Here, the dry pump of the dry type | mold is mainly used for the vacuum pump 27. As shown in FIG.

In the case of the low pressure chemical vapor deposition apparatus 10, the temperature of the reactor 11 during operation reaches about 650 ° C to 770 ° C, and the gas inside the reactor 11 is about at the gas discharge pipe 21 where the gas exits to the outside of the equipment. Cooled to 20 ℃ and discharged. By-products such as powder 33 may be generated due to the temperature difference when the hot gas is discharged to the outside through the gas discharge pipe 21 and attached to the inner wall of the gas discharge pipe 21 to smoothly discharge the gas. It can be impossible. In the gas discharge pipe 21, a heating jacket 31 is installed on the outer circumferential surface of the gas discharge pipe 21 to compensate for the sudden temperature difference to some extent to prevent the byproduct from being attached to the inner wall of the gas discharge pipe 21.

However, such a chemical vapor deposition apparatus is inconvenient to install and separate the heating jacket, and the problem occurs such that the heating jacket is damaged when used several times. In addition, the gas discharge pipe and the heating jacket may generate a gap due to a manufacturing error or a change in temperature when used for a predetermined time may be spaced apart from each other. If a gap is generated between the gas discharge pipe and the heating jacket, the gap between the temperature inside the gas discharge pipe and the inside of the reactor may not be properly reduced, and the byproduct may be attached to the inner wall of the gas discharge pipe, thereby reducing the transmission capacity.

It is an object of the present invention to provide a gas discharge pipe that is easy to install and separate and has a low risk of damage while preventing by-products from occurring on the inner wall of the gas discharge pipe.

1 is a structural diagram of a chemical vapor deposition apparatus including a gas discharge pipe according to the prior art,

2 is a partial cross-sectional perspective view showing a structure of a gas discharge pipe according to the present invention;

3 is a cross-sectional view schematically showing the structure of a chemical vapor deposition apparatus including a gas discharge pipe according to the present invention;

4 is a cross-sectional view illustrating a portion “A” of FIG. 3.

Explanation of symbols on the main parts of the drawings

10; Chemical vapor deposition apparatus 11; Furnace

13; Outer tube 15; Inner tube

17; Boat 19; Gas nozzle

20; Wafer 21; Gas discharge pipe

23; Bellows 25; valve

27; Vacuum pump 29; Exhaust duct

31; Heating jacket 33; powder

40; A gas discharge pipe 41; Body

43; Hot wire 45; Connector

The gas discharge pipe having a heat generating means according to the present invention for achieving the above object, the gas discharge pipe is connected to the reactor to form a path for discharging the gas inside the reactor to the outside, the gas discharge pipe is an internal space It is characterized in that the heating means is built in the body forming the.

As a heat generating means, a heating wire is preferable, and it is preferable to make it the form wound around the gas discharge pipe. The heating wires may be opened to both ends of the gas discharge pipe to the outside, and connectors may be formed at both ends of the heating wires.

Hereinafter, a gas discharge pipe having a heat generating means according to the present invention will be described in detail with reference to the accompanying drawings.

Figure 2 is a partial cross-sectional perspective view showing the structure of the gas discharge pipe according to the present invention, Figure 3 is a schematic cross-sectional view showing the structure of a chemical vapor deposition apparatus including a gas discharge pipe according to the present invention, Figure 4 " It is sectional drawing which showed A "part.

2 to 4, the gas discharge pipe 40 of the present invention has a heating wire 43 that generates heat by electricity in the body 41 forming the internal space. The hot wire 43 may be embedded in a spiral wound over the entire gas discharge pipe 40 to uniformly supply heat to the entire gas discharge pipe 40. At both ends of the heating wire 43, a connector 45 for connection with another gas discharge pipe 40 or a power supply means is formed.

The gas discharge line installed between the reactor 11 and the vacuum pump 27 to discharge the gas is composed of a combination of the plurality of gas discharge pipe (40). The hot wire 43 formed in the gas discharge pipe 40 is connected by the connection of the connector 45.

After the gas is supplied to the reactor 11 through the gas nozzle 19, deposition is performed on the wafer 20 loaded on the boat 17. The gas remaining in the reactor 11 after the chemical reaction is discharged through the gas discharge pipe 40. The vacuum pump 27 installed on one side of the gas discharge pipe 40 operates to forcibly discharge the gas inside the reactor 11 to the gas treatment device through the exhaust duct 29. Residual gas after being used for the reaction in the reaction furnace reached to about 650 ℃ to 770 ℃ is cooled to about 20 ℃ is discharged to the gas discharge pipe 40, wherein heat from the hot wire 43 of the gas discharge pipe 40 It is supplied to the gas discharge pipe 40 whole. Therefore, the rapid temperature difference of the gas discharged through the gas discharge pipe 40 is compensated for. Accordingly, by-products, for example, powder due to the temperature difference when the high-temperature gas is discharged to the outside through the gas discharge pipe 40 can be prevented from adhering to the inner wall of the gas discharge pipe can be smoothly discharged.

On the other hand, it will be apparent to those skilled in the art that the gas discharge pipe according to the present invention may be variously modified without departing from the technical spirit of the present invention without being limited to the above-described embodiment.

According to the gas discharge pipe having the heat generating means according to the present invention as described above, it is possible to eliminate the clogging phenomenon and particle problems of the gas discharge line by the built-in heat generating means, such as heating wire in the semiconductor manufacturing process, especially chemical vapor deposition (CVD) process. have. By-products are not generated on the inner wall of the gas discharge pipe, and they are easy to install and separate. In addition, since there is a built-in hot wire, there is little fear of breakage.

Claims (3)

A gas discharge pipe connected to the reactor to form a path for discharging the gas inside the reactor to the outside, wherein the gas discharge pipe is characterized in that the heat generating means is embedded in the body forming the internal space. The gas discharge pipe according to claim 1, wherein the heat generating means is a heating wire. The gas exhaust pipe according to claim 1, wherein the heat generating means is provided with a connector for electrical connection at both ends.