KR20000012011A - Sample processing apparatus and method - Google Patents

Abstract

PURPOSE: A device for treating a sample is provided to prevent a defect generated in case of a separation of an adhering substrate stack containing a separate layer. CONSTITUTION: An improved separating device(300) contains: a supersonic wave oscillator(1203) in a substrate maintaining unit(150) for the supersonic wave oscillator being driven by the output signal from an oscillator(1201); and the output signal of the oscillator being supplied to the supersonic wave oscillator by passing through signal lines(1203e), (1203f) containing a brush at the end unit, rings(1203c), (1203d) being electrically connected to the brush, and signal lines(1203a), (1203b) penetrating a rotary shaft(103). Therefore, the on/off, the output signal, the amplitude of vibration, and the frequency of the oscillator are controlled by a controller(190).

Description

Sample processing device and sample processing method {SAMPLE PROCESSING APPARATUS AND METHOD}

Field of invention

The present invention relates to a sample processing apparatus and a sample processing method, and more particularly, to a sample processing apparatus and a sample processing method suitable for processing a sample having a separation layer.

Description of related technology

A substrate having a silicon on insulator (SOI) structure (SOI substrate) is known as a substrate having a single crystal Si layer on an insulating layer. Devices using this SOI substrate have many advantages that cannot be achieved by conventional Si substrates. Examples of the advantages are as follows.

(1) Since dielectric insulation is easy, the degree of integration can be increased.

(2) Radiation resistance can be increased.

(3) Since the parasitic capacitance is small, the operating speed of the device can be increased.

(4) The well step is unnecessary.

(5) Latch up can be prevented.

(6) A fully depleted field effect transistor can be formed by thin film formation.

Since the SOI structure has the various advantages described above, research has been conducted on the method of forming the SOI for many years.

As one SOI technology, a silicon on sapphire (SOS) technology in which Si is epitaxially grown by chemical vapor deposition (CVD) on a single crystal sapphire substrate has been known for a long time. This SOS technology has earned a reputation as the most advanced SOI technology. However, in the SOS technique, for example, a large amount of crystal defects occur due to lattice mismatch at the interface between the Si layer and the lower sapphire substrate, aluminum forming the sapphire substrate is mixed with the Si layer, and the substrate is expensive. Since it is difficult to obtain a large area, it has not been put to practical use so far.

SIMOX (Separation by Ion Implanted Oxygen) technology follows SOS technology. For this SIMOX technology, various methods have been implemented to reduce crystal defects or manufacturing costs. The method includes ion implanting oxygen into a substrate to form a buried oxide layer, bonding two wafers through an oxide film and polishing or etching one wafer to leave a thin single crystal Si layer on the oxide film, and Hydrogen is ion implanted from the surface of the Si substrate having the oxide film to a predetermined depth, the substrate is bonded to another substrate, a thin single crystal Si layer is left on the oxide film by heating or the like, and one of the adhesive substrates (the other substrate) is peeled off. It includes how to do it.

This application discloses a new SOI technology in Japanese Patent Laid-Open No. 5-21338. In this technique, a first substrate manufactured by forming a non-porous single crystal layer (including a single crystal Si layer) on a single crystal semiconductor substrate having a porous layer is adhered to a second substrate via an insulating layer. Subsequently, the substrate is separated from the porous layer, thereby transferring the non-porous single crystal layer to the second substrate. This technique is advantageous in that the film uniformity of the SOI layer is good, the crystal defect density in the SOI layer can be reduced, the surface planarity of the SOI layer is good, and expensive manufacturing apparatus having special specifications is unnecessary, and about several hundreds. It is advantageous because an SOI substrate having a SOI film having a thickness of 10 to 10 탆 can be manufactured by a single manufacturing apparatus.

The present application also discloses in Japanese Patent Laid-Open No. 7-302889, bonding the first and second substrates, separating the first substrate from the second substrate without destroying the first substrate, and removing the first substrate. The technique of planarizing the surface, forming the porous layer again, and reusing the porous layer is disclosed. Since the first substrate is not wasted, this technique has the advantage of greatly reducing the manufacturing cost and simplifying the manufacturing process.

In the above technique, when substrates obtained by adhering two substrates (hereinafter referred to as adhesive substrate stack) are separated in the porous layer, they must be separated with high reproducibility and without any damage to them.

1A to 1E illustrate a process for manufacturing an SOI substrate according to a preferred embodiment of the present invention.

2 is a view showing a schematic configuration of a separation device according to a preferred embodiment of the present invention;

FIG. 3 schematically illustrates a defect that may be caused by a process of separating an adhesive substrate stack into two substrates while rotating the adhesive substrate stack at a constant speed. FIG.

4 is a view schematically showing a state in which the adhesive substrate stack is partially separated in a first process according to the first embodiment of the first mode;

5 is a view schematically showing a state in which the adhesive substrate stack is completely separated in a second process according to the first embodiment of the first mode;

6 is a flowchart schematically showing a control procedure of the separation device according to the first embodiment of the first mode;

FIG. 7 schematically shows a state in which the adhesive substrate stack is partially separated in a second process according to the second embodiment of the first mode;

8 is a view schematically showing a state in which the adhesive substrate stack is completely separated in a second process according to the second embodiment of the first mode;

9 is a flowchart schematically showing the control procedure of the separation device according to the second embodiment of the first mode;

FIG. 10 schematically shows a state in which the adhesive substrate stack is partially separated in the first process according to the third embodiment of the first mode;

Fig. 11 is a flowchart schematically showing the control procedure of the separation device according to the third embodiment of the first mode.

FIG. 12 schematically shows a state in which the adhesive substrate stack is partially separated in the first process according to the fourth embodiment of the first mode;

FIG. 13 schematically shows a state in which the adhesive substrate stack is completely separated in the second process according to the fourth embodiment of the first mode.

Fig. 14 is a flowchart schematically showing the control procedure of the separation device according to the fourth embodiment of the first mode.

FIG. 15 schematically shows the configuration of a final separation device according to the fifth embodiment of the first mode;

Fig. 16 is a diagram schematically showing the configuration of the final separating device according to the fifth embodiment of the first mode.

FIG. 17 is a flow chart schematically showing the flow of separation processing using the final separation device for the second process and the separation device for the first process;

18 is a plan view schematically showing an automatic separator having a final separator for the second process and a separator for the first process;

Fig. 19 is a flowchart schematically showing a separation process by the automatic separation device.

20A to 20E illustrate a process for manufacturing an SOI substrate according to another preferred embodiment of the present invention.

FIG. 21 is a diagram schematically showing the configuration of the improved separating apparatus according to the first to third embodiments of the second mode of the present invention. FIG.

FIG. 22 schematically shows the adhesive substrate stack after the first region (for example, the outer peripheral portion) is separated by a jet in the first embodiment of the second mode.

FIG. 23 is a flowchart schematically showing a sequence of separation processing according to the first embodiment of the second mode using the separation device of FIG.

24 is a flowchart schematically showing a sequence of separation processing according to the second embodiment of the second mode using the separation device of FIG.

FIG. 25 is a flowchart schematically showing a sequence of separation processing according to the third embodiment of the second mode using the separation device of FIG.

Fig. 26 is a sectional view schematically showing the construction of a second separation device applied to a fourth embodiment of the second mode of the present invention.

FIG. 27 is an enlarged view showing parts of the cassette shown in FIG. 26 (before separation of the second region)

FIG. 28 is an enlarged view showing parts of the cassette shown in FIG. 26 (after separation of the second region)

FIG. 29 schematically shows the configuration of a processing system according to a fourth embodiment of a second mode in which a series of processes of separating an adhesive substrate stack into two substrates is executed;

30 schematically shows the configuration of a processing system according to a fourth embodiment of a second mode in which a series of processes of separating an adhesive substrate stack into two substrates is executed;

FIG. 31 is a flowchart showing a control procedure of the processing system shown in FIGS. 29 and 30;

10: first substrate 11, 14: single crystal Si substrate

12: porous Si layer 13: non-porous single crystal Si layer

15: insulating layer 20: second substrate

100: separator 101: adhesive substrate stack

101a, 101c: substrate 101b: porous layer

101d, 101e: Defect 102: Nozzle

103 and 104: rotary shafts 103a and 104a: rotary sealing parts

103b and 104b: vacuum line 106: nozzle drive unit

108, 111: bearing 109: support table

110: motor 112: air cylinder

113: sealing member 114: pump

120, 150: substrate holding parts 181, 182: suction holes

190, 700: controller 191: cylinder drive unit

201, 204: boundary line 202: unseparated area

203: separation area 300: automatic separation device

310: chamber 311: standby position

312: movement route 320: shutter

331: second unloader 332: first unloader

333: loaders 334, 335, 336: carriers

340: substrate transport robot 341: robot hand

350: final separator 351: wedge

352, 355, 372: cylinder 353: first support part

354: stage 356: second support portion

361: air blow unit 370: centering unit

371: guide member 400: second separation device

401: ultrasonic bath 402: liquid

403: ultrasonic source 410, 601, 602, 603: cassette

411: partition 412: support plate

500: drying furnace 701, 702, 703, 704: robot

1201: Oscillator 1203: Ultrasonic Vibrator

1203a, 1203b, 1203e, 1203f: signal lines 1203c, 1203d: ring

The present invention has been made in view of the above situation, and an object thereof is to provide an apparatus and method suitable for preventing any damage when separating a sample such as a substrate having a separation layer.

When a sample such as a substrate having a separation layer is separated, some areas remain as unseparated areas in the first step, and then a force is applied to the unseparated areas from a predetermined direction to completely separate the samples in the second step. This prevents defects when separating the sample.

The apparatus and method according to the first and second aspects of the present invention are suitable for the first step. The separation conditions in the second process are made uniform by the apparatus and method according to the first and second sides to facilitate the control of the second process, thereby preventing defects when separating the samples.

According to a first aspect of the present invention, there is provided a sample processing apparatus for processing a sample having a separation layer, comprising a separation mechanism for partially separating a sample from the separation layer while leaving a predetermined area of the separation layer as an unseparated area. A sample processing device is provided, which is characterized by the above-mentioned.

In the sample processing apparatus according to the first aspect, preferably, the separation mechanism, for example, has an injection portion for injecting fluid into the separation layer, and partially separates the sample using the fluid.

In the sample processing apparatus according to the first aspect, for example, the sample is preferably made of a plate member having a layer having a weak structure as a separation layer.

In the sample processing apparatus according to the first aspect, for example, it is preferable that the separation mechanism partially separates the sample while leaving a substantially circular area as an unseparated area.

In the sample processing apparatus according to the first aspect, for example, it is preferable that the separation mechanism partially separates the sample while leaving an approximately circular area at the center of the separation layer as the unseparation area.

In the sample processing apparatus according to the first aspect, preferably, for example, the separation mechanism has a driving mechanism for rotating the sample about an axis perpendicular to the separation layer, and an injection unit for injecting fluid into the separation layer, and the sample is driven. The sample is rotated and partially separated by the instrument.

In the sample processing apparatus according to the first aspect, preferably, for example, the driving mechanism rotates the sample at a low speed and then rotates the sample at a high speed in the initial stage of the partial separation process of the sample.

In the sample processing apparatus according to the first aspect, for example, the driving mechanism preferably increases the rotational speed of the sample gradually or stepwise when partially separating the sample.

In the sample processing apparatus according to the first aspect, for example, the drive mechanism preferably changes the rotational speed of the sample when the sample is partially separated.

In the sample processing device according to the first aspect, preferably, for example, the injecting portion injects the fluid at high pressure in the initial stage of the partial separation process of the sample and then reduces the pressure of the fluid.

In the sample processing apparatus according to the first aspect, for example, it is preferable that the injection portion gradually or gradually decreases the pressure of the injected fluid when the sample is partially separated.

In the sample processing apparatus according to the first aspect, for example, the injection unit preferably varies the pressure of the fluid to be injected when the sample is partially separated.

In the sample processing apparatus according to the first aspect, for example, when the jet part partially separates the sample, it is preferable to inject the fluid to a position away from the center of the separation layer by a predetermined distance in the planar direction.

In the sample processing apparatus according to the first aspect, for example, the unseparated region is preferably smaller than the region where the separation layer is separated by the partial separation treatment.

In the sample processing apparatus according to the first side, for example, the sample is preferably formed by adhering a first plate member having a weak layer to the second plate member.

In the sample processing apparatus according to the first aspect, for example, the weak layer is preferably made of a porous layer.

In the sample processing apparatus according to the first side, for example, the first flat member is preferably made of a semiconductor substrate.

In the sample processing apparatus according to the first aspect, for example, the first flat member is preferably formed by forming a porous layer on one surface of the semiconductor substrate and forming a non-porous layer on the porous layer.

In the sample processing apparatus according to the first aspect, for example, the nonporous layer preferably includes a single crystal semiconductor layer.

According to the second aspect of the present invention, in the sample processing method for processing a sample having a separation layer, the separation step of partially separating the sample from the separation layer while leaving a predetermined area of the separation layer as an unseparated area. A treatment method is provided.

In the sample processing method according to the second aspect, for example, the sample is preferably partially separated by spraying a fluid on the separation layer.

In the sample processing method according to the second aspect, for example, the sample is preferably made of a plate member having a layer having a weak structure as a separation layer.

In the sample processing method according to the second aspect, for example, it is preferable that the sample is partially separated while leaving a substantially circular area as an unseparated area.

In the sample processing method according to the second aspect, for example, it is preferable that the sample is partially separated while leaving a substantially circular region as an unseparated region at approximately the center of the separation layer.

In the sample processing method according to the second aspect, for example, the sample is preferably partially separated by spraying a fluid on the separating layer while rotating the sample about an axis perpendicular to the separating layer.

In the sample processing method according to the second aspect, for example, the sample is preferably rotated at a low speed in the initial stage of the separation step and then at a high speed.

In the treatment method according to the second aspect, for example, the rotational speed of the sample is preferably increased gradually or stepwise when the sample is partially separated.

In the sample processing method according to the second aspect, for example, the rotational speed of the sample is preferably changed when the sample is partially separated.

In the sample processing method according to the second aspect, it is preferable that, for example, a high pressure fluid is used in the initial stage of partial separation of the sample, and then a low pressure fluid is used.

In the sample processing method according to the second aspect, for example, the pressure of the fluid used for separation is preferably reduced gradually or stepwise when partially separating the sample.

In the sample processing method according to the second aspect, for example, the pressure of the fluid used for separation is preferably varied when the sample is partially separated.

In the sample processing method according to the second aspect, for example, the fluid is preferably injected at a position away from the center of the separation layer by a predetermined distance in the planar direction when the sample is partially separated.

In the sample processing method according to the second aspect, for example, the unseparated region is preferably smaller than the region in which the separating layer is separated in the separating process.

In the sample processing method according to the second aspect, for example, the sample is preferably formed by adhering a first plate member having a weak layer to the second plate member.

In the sample processing method according to the second aspect, for example, the weak layer is preferably made of a porous layer.

In the sample processing method according to the second aspect, for example, the first flat plate member is preferably made of a semiconductor substrate.

In the sample processing method according to the second aspect, for example, the first flat member is preferably formed by forming a porous layer on one surface of the semiconductor substrate and forming a non-porous layer on the porous layer.

In the sample processing method according to the second aspect, for example, the non-porous layer preferably includes a single crystal semiconductor layer.

According to a third aspect of the present invention, in a sample separation device for separating a sample having a separation layer from a separation layer, the first separation part of the sample from the separation layer while leaving a predetermined area of the separation layer as a non-separation area. A separating apparatus is provided, comprising a separating means and a second separating means for completely separating the sample by applying a force from a predetermined direction to the unseparated region of the sample treated by the first separating means.

In the sample separating apparatus according to the third aspect, for example, the sample is preferably made of a plate member having a layer having a weak structure as a separating layer.

In the sample separating apparatus according to the third aspect, for example, it is preferable that the first separating means partially separates the sample while leaving a substantially circular region as the unseparated region.

In the sample separating apparatus according to the third aspect, for example, it is preferable that the first separating means partially separates the sample while leaving a substantially circular region as an unseparated region at approximately the center of the separating layer.

In the sample separation device according to the third aspect, preferably, for example, the first separation means partially separates the sample by spraying fluid on the separation layer while rotating the sample about an axis perpendicular to the separation layer, and then separating the second separation. The means hold the sample without rotating the sample formed by the partial separation process, and inject the fluid into the gap in the sample to separate the unseparated area remaining in the sample.

In the sample separating apparatus according to the third aspect, preferably, for example, the first separating means injects fluid to the separating layer of the sample while rotating the sample about an axis perpendicular to the separating layer to partially separate the sample, and The separating means separates the unseparated region remaining in the sample by injecting fluid into the gap in the sample while almost stopping the rotation of the sample formed by the partial separating process.

In the sample separating apparatus according to the third aspect, for example, the second separating means preferably inserts wedges into the gaps in the sample formed by the partial separation treatment to completely separate the sample.

In the sample separating apparatus according to the third aspect, for example, the unseparated region remaining after being processed by the first separating means is preferably smaller than the region separated by the first separating means.

In the sample separating device according to the third aspect, for example, the sample is preferably formed by adhering a first plate member having a weak layer to the second plate member.

In the sample separation device according to the third aspect, for example, the weak layer is preferably made of a porous layer.

In the sample separating apparatus according to the third side, for example, the first plate member is preferably made of a semiconductor substrate.

In the sample separating apparatus according to the third aspect, for example, the first flat member is preferably formed by forming a porous layer on one surface of the semiconductor substrate and forming a non-porous layer on the porous layer.

In the sample separation device according to the third aspect, for example, the nonporous layer preferably includes a single crystal semiconductor layer.

According to a fourth aspect of the present invention, in a sample separation device for separating a sample having a separation layer from the separation layer, a drive mechanism for rotating the sample about an axis perpendicular to the separation layer of the sample, and the fluid is injected into the separation layer. And a sample is partially separated from the separation layer using the fluid from the injection portion while rotating the sample by the driving mechanism and leaving a predetermined area of the separation layer as an unseparated area, and the sample is almost rotated. A separation device is provided, wherein the sample is completely separated by separating the unseparated area by using the fluid from the injection portion while stopping.

In the sample separating apparatus according to the fourth aspect, for example, the sample is preferably made of a flat plate member having a layer having a weak structure as a separating layer.

In the sample separating apparatus according to the fourth aspect, for example, when the sample is partially separated, it is preferable that the substantially circular region remains as an unseparated region.

In the sample separation device according to the fourth aspect, for example, when the sample is partially separated, it is preferable that the substantially circular region remains as an unseparated region at approximately the center of the separation layer.

In the sample separation device according to the fourth aspect, for example, the unseparated area remaining after the partial separation process is preferably smaller than the area separated by the partial separation process.

In the sample separating apparatus according to the fourth aspect, for example, the sample is preferably formed by adhering the first plate member having the weak layer to the second plate member.

In the sample separation device according to the fourth aspect, for example, the weak layer is preferably made of a porous layer.

In the sample separating device according to the fourth aspect, for example, the first flat member is preferably made of a semiconductor substrate.

In the sample separating apparatus according to the fourth aspect, for example, the first flat member is preferably formed by forming a porous layer on one surface of the semiconductor substrate and forming a non-porous layer on the porous layer.

In the sample separation device according to the fourth aspect, for example, the non-porous layer preferably comprises a single crystal semiconductor layer.

According to a fifth aspect of the present invention, in a sample separation device for separating a sample having a separation layer from the separation layer, the first separation part of the sample from the separation layer while leaving a predetermined area of the separation layer as an unseparated layer. A sample separation device is provided, comprising a separation mechanism and a second separation mechanism for completely separating the sample by applying a force from a predetermined direction to a gap formed in the sample by the separation treatment by the first separation mechanism.

In the sample separation device according to the fifth aspect, for example, the first separation mechanism preferably partially separates the sample by injecting fluid into the separation layer while rotating the sample about an axis perpendicular to the separation layer.

In the sample separating apparatus according to the fifth aspect, for example, the second separating mechanism preferably removes the sample completely by inserting a wedge into the gap in the sample.

The sample separating apparatus according to the fifth aspect is preferably provided with, for example, a conveying robot for conveying the sample processed by the first separating mechanism to the second separating mechanism.

It is preferable that the sample separation device according to the fifth aspect further includes, for example, a positioning mechanism for positioning the sample with respect to the first separation mechanism or the second separation mechanism.

In the sample separation device according to the fifth aspect, for example, the unseparated area remaining after the treatment by the first separation device is preferably smaller than the area separated by the first separation device.

In the sample separating apparatus according to the fifth aspect, for example, the sample is preferably formed by adhering the first plate member having the weak layer to the second plate member.

In the sample separation device according to the fifth aspect, for example, the weak layer is preferably made of a porous layer.

In the sample separating apparatus according to the fifth aspect, for example, the first plate member is preferably made of a semiconductor substrate.

In the sample separating apparatus according to the fifth aspect, for example, the first flat member is preferably formed by forming a porous layer on one surface of the semiconductor substrate and forming a non-porous layer on the porous layer.

In the sample separation device according to the fifth aspect, for example, the nonporous layer preferably includes a single crystal semiconductor layer.

According to a sixth aspect of the present invention, in a sample separation device for separating a sample having a separation layer from the separation layer, the sample partially separated from the separation layer is partially left while a predetermined area of the separation layer is left as an unseparated area. And a holding mechanism for setting the sample to a substantially rest state by holding, and a separating mechanism for completely separating the sample by applying a force from a predetermined direction to the unseparated region of the sample held by the holding mechanism. An apparatus is provided.

In the sample separating device according to the sixth aspect, for example, the sample is preferably made of a plate member having a layer having a weak structure as a separating layer.

In the sample separation device according to the sixth aspect, for example, the separation mechanism preferably injects fluid into the gap in the sample formed by the partial separation treatment to completely separate the sample.

In the sample separating apparatus according to the sixth aspect, for example, the separating mechanism preferably removes the sample completely by inserting a wedge into the gap in the sample formed by the partial separating treatment.

In the sample separating apparatus according to the sixth aspect, for example, the unseparated region is preferably smaller than the already separated region.

In the sample separating device according to the sixth aspect, for example, the sample is preferably formed by adhering a first plate member having a weak layer to the second plate member.

In the sample separation device according to the sixth aspect, for example, the weak layer is preferably made of a porous layer.

In the sample separating device according to the sixth aspect, for example, the first flat member is preferably made of a semiconductor substrate.

In the sample separating apparatus according to the sixth aspect, for example, the first flat member is preferably formed by forming a porous layer on one surface of the semiconductor substrate and forming a non-porous layer on the porous layer.

In the sample separation device according to the sixth aspect, for example, the nonporous layer preferably comprises a single crystal semiconductor layer.

According to a seventh aspect of the present invention, in the sample separation method for separating a sample having a separation layer from the separation layer, the first separation part of the sample from the separation layer while leaving a predetermined area of the separation layer as an unseparated layer. There is provided a sample separation method comprising a separation step and a second separation step for completely separating the sample by applying a force from a predetermined direction to an unseparated area of the sample processed in the first separation step.

In the sample separation method according to the seventh aspect, for example, the sample is preferably made of a plate member having a layer having a weak structure as a separation layer.

In the sample separation method according to the seventh aspect, for example, the first separation step preferably comprises partial separation of the sample while leaving an approximately circular area as the unseparated area.

In the sample separation method according to the seventh aspect, for example, the first separation step preferably consists of partially separating the sample while leaving a substantially circular area as an unseparated area at approximately the center of the separation layer.

In the sample separation method according to the seventh aspect, preferably, for example, the first separation step consists of partially separating the sample by injecting fluid into the separation layer while rotating the sample about an axis perpendicular to the separation layer, The second separation step preferably consists of holding the sample without rotating the sample formed by the partial separation process and injecting a fluid into the gap in the sample to separate the unseparated region remaining in the sample.

In the sample separation method according to the seventh aspect, preferably, for example, the first separation step consists of partially separating the sample by injecting fluid into the separation layer of the sample while rotating the sample about an axis perpendicular to the separation layer. The second separation step preferably consists of separating the unseparated region remaining in the sample by injecting fluid into the gap in the sample while substantially stopping the rotation of the sample formed by the partial separation process.

In the sample separation method according to the seventh aspect, for example, the second separation step preferably comprises a wedge inserted into a gap in the sample formed by the partial separation treatment to completely separate the sample.

In the sample separation method according to the seventh aspect, for example, the unseparated area remaining after the first separation step is preferably smaller than the area separated in the first separation step.

In the sample separation method according to the seventh aspect, for example, the sample is preferably formed by adhering a first plate member having a weak layer to the second plate member.

In the sample separation method according to the seventh aspect, for example, the weak layer is preferably made of a porous layer.

In the sample separation method according to the seventh aspect, for example, the first plate member is preferably made of a semiconductor substrate.

In the sample separation method according to the seventh aspect, for example, the first flat member is preferably formed by forming a porous layer on one surface of the semiconductor substrate and forming a non-porous layer on the porous layer.

In the sample separation method according to the seventh aspect, for example, the nonporous layer preferably comprises a single crystal semiconductor layer.

According to an eighth aspect of the present invention, in a sample separation method for separating a sample having a separation layer from a separation layer, the sample partially separated from the separation layer is partially left while a predetermined area of the separation layer is left as an unseparated area. There is provided a sample separation method comprising: a stop step for setting the sample to an approximately idle state, and a separation step for completely separating the sample by applying a force from a predetermined direction to an unseparated region of the idle sample. do.

In the separation method of the eighth aspect, for example, the sample is preferably made of a plate member having a layer having a weak structure as a separation layer.

In the sample separation method of the eighth aspect, for example, the separation step preferably consists of injecting fluid into the gap in the sample formed by the partial separation treatment to completely separate the sample.

In the sample separation method of the eighth aspect, for example, the separation step preferably consists of inserting a wedge into the gap in the sample formed by the partial separation treatment to completely separate the sample.

In the sample separation method of the eighth aspect, for example, the unseparated region is preferably smaller than the already separated region.

In the sample separation method of the eighth aspect, for example, the sample is preferably formed by adhering a first plate member having a weak layer to the second plate member.

In the sample separation method of the eighth aspect, for example, the weak layer is preferably made of a porous layer.

In the sample separation method of the eighth aspect, for example, the first plate member is preferably made of a semiconductor substrate.

In the sample separation method of the eighth aspect, for example, the first plate member is preferably formed by forming a porous layer on one surface of the semiconductor substrate and forming a non-porous layer on the porous layer.

In the sample separation method of the eighth aspect, for example, the nonporous layer preferably comprises a single crystal semiconductor layer.

According to a ninth aspect of the present invention, in a sample separation device for separating a sample having a separation layer from the separation layer, first separation means and vibration energy for mainly separating the first area of the separation layer by injecting fluid into the separation layer. It is provided with a second separation means for mainly separating the second region of the separation layer by using, and the sample separation device is provided, characterized in that the sample is separated from the separation layer by the first and second separation means.

In the sample separating apparatus according to the ninth aspect, for example, the sample is preferably made of a flat plate member having a layer having a weak structure as a separating layer.

In the sample separation device according to the ninth aspect, for example, the first region is an area at the periphery of the separation layer and the second area is an area at the center of the separation layer.

In the sample separating apparatus according to the ninth aspect, for example, the first separating means preferably separates the first region mainly by injecting fluid into the separating layer while rotating the sample about an axis perpendicular to the separating layer.

Preferably, for example, the sample separating apparatus according to the ninth aspect is further provided with supporting means for supporting the sample in the separating treatment by the first and second separating means, and the second separating means further comprises: The vibration energy is supplied to the sample from the part contacting with.

In the sample separating apparatus according to the ninth aspect, preferably, for example, the support means pressurizes the portion supporting the sample by sandwiching a portion near the center of the sample from both sides, and has a pair of opposing support surfaces that are substantially circular in shape. .

In the sample separating apparatus according to the ninth aspect, for example, the first region is located substantially outside of the region pressed by the support surface, and the second region is the region pressed by the support surface.

In the sample separating apparatus according to the ninth aspect, preferably, for example, the second separating means includes a processing tank for processing the sample and a vibration source for generating vibration energy, and the vibration energy generated by the vibration source is the first. The sample treated by the separating means is supplied to the sample through the liquid in the treatment tank while being impregnated in the treatment tank.

In the sample separating apparatus according to the ninth aspect, for example, the treatment tank preferably includes a dividing means for dividing the separated sample when the sample is completely separated by the vibration energy.

In the sample separating apparatus according to the ninth aspect, for example, the first separating means mainly separates the first region first, and then the second separating means mainly separates the second region.

In the sample separating apparatus according to the ninth aspect, preferably, for example, the second separating means mainly separates the second region first, and then the first separating means mainly separates the first region.

In the sample separating apparatus according to the ninth aspect, for example, at least a part of the separating process by the first separating means and the separating process by the second separating means is preferably performed in parallel.

In the sample separating device according to the ninth aspect, for example, the sample is preferably formed by adhering a first plate member having a weak layer to the second plate member.

In the sample separation device according to the ninth aspect, for example, the weak layer is preferably made of a porous layer.

In the sample separating apparatus according to the ninth aspect, for example, the first plate member is preferably made of a semiconductor substrate.

In the sample separating apparatus according to the ninth aspect, for example, the first flat member is preferably formed by forming a porous layer on one surface of the semiconductor substrate and forming a non-porous layer on the porous layer.

In the sample separation device according to the ninth aspect, for example, the nonporous layer preferably includes a single crystal semiconductor layer.

According to a ninth aspect of the present invention, in a sample separation device for separating a sample having a separation layer from the separation layer, a support portion for supporting the sample, an injection portion for injecting fluid into the separation layer of the sample supported by the support portion, and the sample Also provided is a sample separation device having a vibration source for generating vibration energy to be supplied to the sample, wherein the sample is separated by fluid and vibration energy.

In the sample separating apparatus according to the ninth aspect, for example, the sample is preferably made of a flat plate member having a layer having a weak structure as a separating layer.

In the sample separating apparatus according to the ninth aspect, for example, the supporting portion preferably supports the sample while rotating the sample about an axis perpendicular to the separating layer.

The sample separation device according to the ninth aspect allows the injection unit to inject the fluid mainly for separating the first region of the separation layer by, for example, a fluid, and mainly separates the second region of the separation layer by vibration energy. Preferably, the vibration source is provided with a control unit for generating vibration energy.

In the sample separation device according to the ninth aspect, for example, the control unit preferably controls the injection unit and the vibration source so as to mainly separate the first region by the fluid and then mainly separate the second region by the vibration energy. Do.

In the sample separating apparatus according to the ninth aspect, for example, the control unit preferably controls the spraying unit and the vibration source so as to mainly separate the second region by the vibration energy and then mainly separate the first region by the fluid. .

In the sample separating apparatus according to the ninth aspect, for example, the control unit controls the spraying unit and the vibration source so as to perform at least a part of the sample separating process by the fluid and the sample separating process by the vibration energy. desirable.

In the separation device according to the ninth aspect, preferably, for example, the first area is an area at the periphery of the separation layer, and the second area is an area at the center of the separation layer.

In the sample separating apparatus according to the ninth aspect, for example, the support portion sandwiches a portion near the center of the sample from both sides to press the portion supporting the sample, and has a pair of opposing support surfaces that are substantially circular in shape.

In the sample separating apparatus according to the ninth aspect, preferably, for example, the first region is located approximately on the outer periphery of the region pressed by the supporting surface, and the second region is the region approximately pressed by the supporting surface.

In the sample separating device according to the ninth aspect, for example, the vibration source is preferably arranged in the support portion.

In the sample separating apparatus according to the ninth aspect, for example, the vibration source is preferably disposed at the end of the supporting portion where the supporting portion contacts the sample.

In the sample separating apparatus according to the ninth aspect, for example, the separating apparatus further includes a processing tank for processing the sample, and supports the sample by the supporting portion to separate the sample using the fluid. The fluid is injected into the separation layer and the vibration energy generated by the vibration source is supplied to the sample through the liquid in the treatment tank while the sample is impregnated in the treatment tank to separate the sample using the vibration energy.

In the sample separating device according to the ninth aspect, for example, the treatment tank preferably has a dividing member for dividing the separated sample when the sample is completely separated by the vibration energy.

The sample separating apparatus according to the ninth aspect is preferably provided with a drying furnace for drying the sample processed in the treatment tank, for example.

It is preferable that the sample separation apparatus according to the ninth aspect is provided with, for example, a classification mechanism for classifying the separated sample.

It is preferable that the sample separation apparatus according to the ninth aspect is provided with, for example, a conveying mechanism for receiving a sample from the support and conveying the sample to the processing tank.

The sample separation device according to the ninth aspect includes, for example, a transport mechanism for accommodating a plurality of samples sequentially from a support portion, storing a plurality of samples sequentially in one cassette, and setting a cassette in a processing tank. One is preferable.

It is preferable that the sample separation apparatus according to the ninth aspect is further provided with, for example, a transport mechanism for transporting the sample between the support portion, the processing tank, and the drying furnace.

The sample separating device according to the ninth aspect includes, for example, storing a plurality of samples in sequence from a support portion, sequentially storing a plurality of samples in one cassette, impregnating the cassette in the processing tank, and processing in the processing tank. It is preferable that the transfer mechanism which accommodates a cassette from a process tank and conveys a cassette to a drying furnace after completion is provided.

The sample separating apparatus according to the ninth aspect is preferably provided with a sorting mechanism for separating the sample by taking the separated sample out of the drying furnace after the separated sample is dried in the drying furnace.

In the sample separating device according to the ninth aspect, for example, the sample is preferably formed by adhering a first plate member having a weak layer to the second plate member.

In the sample separation device according to the ninth aspect, for example, the weak layer is preferably made of a porous layer.

In the sample separating apparatus according to the ninth aspect, for example, the first plate member is preferably made of a semiconductor substrate.

In the sample separating apparatus according to the ninth aspect, for example, the first flat member is preferably formed by forming a porous layer on one surface of the semiconductor substrate and forming a non-porous layer on the porous layer.

In the sample separator according to the ninth aspect, for example, the nonporous layer preferably comprises a single crystal semiconductor layer.

According to a tenth aspect of the present invention, in the sample separation method for separating a sample having a separation layer from the separation layer, the first separation step of injecting fluid into the separation layer to mainly separate the first region of the separation layer, And a second separation step for separating the second area of the separation layer mainly using vibration energy, and the sample is separated from the separation layer in the first and second separation steps.

In the sample separation method according to the tenth aspect, for example, the sample is preferably made of a plate member having a layer having a weak structure as a separation layer.

In the sample separation method according to the tenth aspect, preferably, for example, the first region is an area at the periphery of the separation layer, and the second area is an area at the center of the separation layer.

In the sample separation method according to the tenth aspect, for example, the first separation step preferably consists of mainly separating the first region by injecting fluid into the separation layer while rotating the sample about an axis perpendicular to the separation layer.

In the sample separation method according to the tenth aspect, preferably, for example, the first and second separation steps support the sample by the same support portion, and the second separation step is performed from the portion where the support portion contacts the sample. It consists of supplying vibration energy to the sample.

In the sample separation method according to the tenth aspect, preferably, for example, the support portion presses a portion near the central portion of the sample to sandwich the support portion by sandwiching from both sides, and has a pair of opposing support surfaces that are substantially circular in shape. .

In the sample separation method according to the tenth aspect, preferably, for example, the first region is located approximately on the outer periphery of the region pressed by the support surface, and the second region is the region pressed substantially by the support surface. .

In the sample separation method according to the tenth aspect, for example, the second separation step preferably consists of impregnating the sample processed in the first separation step into the processing tank and supplying vibration energy to the sample through the liquid in the processing tank. Do.

In the sample separation method according to the tenth aspect, preferably, for example, the first separation step is performed first, and then the second separation step is performed.

In the sample separation method according to the tenth aspect, the second separation step is preferably performed first, for example, and then the first separation step is performed.

In the sample separation method according to the tenth aspect, for example, at least a part of the first and second separation steps is preferably performed in parallel.

According to an eleventh aspect of the present invention, in a sample separation method for separating a sample having a separation layer from the separation layer, the sample is formed by injecting a fluid into the separation layer of the sample and simultaneously supplying vibration energy to the sample to separate the sample. A sample separation method is provided.

In the sample separation method according to the eleventh aspect, for example, the sample is preferably separated while rotating the sample about an axis perpendicular to the separation layer.

According to a twelfth aspect of the present invention, in a sample separation method for separating a sample having a separation layer from the separation layer, the fluid is injected into the separation layer of the sample and the vibration energy is supplied to a portion near the center of the sample to provide the sample. There is provided a sample separation method, characterized in that consisting of the separation.

In the sample separation method according to the twelfth aspect, for example, the sample is preferably separated while rotating the sample about an axis perpendicular to the separation layer.

According to a thirteenth aspect of the present invention, in a sample separation method for separating a sample having a separation layer from the separation layer, the fluid is injected into the sample while injecting a fluid into the separation layer of the sample and the fluid is injected into the sample. Provided is a sample separation method comprising consisting of separating.

In the sample separation method according to the eleventh aspect, for example, the sample is preferably separated while rotating the sample about an axis perpendicular to the separation layer.

According to a fourteenth aspect of the present invention, in a sample separation method for separating a sample having a separation layer from the separation layer, the predetermined portion of the sample is simultaneously sprayed with a fluid to the separation layer of the sample while supporting the predetermined portion of the sample. Provided is a sample separation method comprising consisting of separating the sample by supplying vibration energy to the.

In the sample separation method according to the fourteenth aspect, for example, the sample is preferably separated while rotating the sample about an axis perpendicular to the separation layer.

In the sample separation method according to the tenth to fourteenth aspects, for example, the sample is formed by adhering a first plate member having a weak layer to the second plate member.

In the sample separation method according to the tenth to fourteenth aspects, for example, the weak layer consists of a porous layer.

In the sample separation method according to the tenth to fourteenth aspects, for example, the first flat member is made of a semiconductor substrate.

In the sample separation method according to the tenth to fourteenth aspects, for example, the first flat member is formed by forming a porous layer on one surface of a semiconductor substrate and forming a nonporous layer on the porous layer.

In the sample separation method according to the tenth to fourteenth aspects, for example, the non-porous layer includes a single crystal semiconductor layer.

Other objects, features and advantages of the present invention will become apparent from the following detailed description of embodiments of the invention, taken in conjunction with the accompanying drawings.

1A to 1E are views for explaining a process for manufacturing an SOI substrate according to a preferred embodiment of the present invention.

In the process shown in Fig. 1A, a single crystal Si substrate 11 is produced, and a porous Si layer 12 is formed on the surface of the single crystal Si substrate by anodization. In the process shown in FIG. 1B, the non-porous single crystal Si layer 13 is formed on the porous Si layer by epitaxial growth. This process forms a first substrate.

In the process shown in FIG. 1C, the second substrate 20 is manufactured by forming an insulating layer (for example, SiO ₂ layer) on the surface of the single crystal Si substrate 14. The first substrate 10 and the second substrate 20 are in close contact with each other at room temperature so that the non-porous single crystal Si layer 13 faces the insulating layer 15. Thereafter, the first substrate 10 and the second substrate 20 are bonded by permanent bonding, pressure, heating or a combination thereof. By this treatment, the non-porous single crystal Si layer 13 and the insulating layer 15 are firmly bonded. The insulating layer 15 is a non-porous single crystal as mentioned later, as long as the state shown in Fig. 1C can be obtained when the single crystal Si substrate 14 or the first and second substrates are in close contact with each other as mentioned above. It can be formed on both the Si layer 13 or the non-porous single crystal Si layer 13 and the single crystal Si substrate 14.

In the process shown in FIG. 1D, the adhesive substrate is separated at the portion of the porous Si layer 12. As shown in FIG. The second substrate side 10 " +20 has a multilayer structure of a porous Si layer 12 " / single crystal Si layer 13 / insulation layer 15 / single crystal Si substrate 14. On the first substrate 10 'side, a porous Si layer 12' is formed on the single crystal Si substrate 11.

With respect to the substrate 10 'after separation, the remaining porous Si layer 12' is removed and the surface is planarized as needed, so that the single crystal Si substrate 11 is formed to form another first substrate 10. Is reused.

In the process shown in FIG. 1E after separation of the adhesive substrate stack, the porous layer 12 "is selectively removed on the surface of the second substrate side 10" +20. By this treatment, a substrate having a multi-layered structure of a single crystal Si layer 13 / insulating layer 15 / single crystal Si substrate 14, that is, an SOI substrate can be obtained.

In this embodiment, at least part of the process shown in Fig. 1D, i.e., in the process of separating the adhesive substrate stack, as a separation layer, a liquid or gas (fluid) is sprayed onto the porous Si layer so that the adhesive substrate stack is divided into two substrates. Use a separator to separate it.

20A to 20E illustrate a process for manufacturing an SOI substrate in accordance with another preferred embodiment of the present invention.

In the process shown in Fig. 20A, a single crystal Si substrate 11 is produced, and the porous Si layer 12 is formed on the surface of the single crystal Si substrate by anodization. In the process shown in FIG. 20B, the non-porous single crystal Si layer 13 is formed on the porous Si layer 12 by epitaxial growth, and the insulating layer (for example, SiO ₁ layer) 15 is non-porous. It is formed on the single crystal Si layer 13. By this process, the first substrate 10 is formed.

In the process shown in Fig. 20C, a second substrate is manufactured. The first substrate 10 and the second substrate are in close contact with each other at room temperature so that the insulating layer 15 faces the second substrate 14. Thereafter, the first substrate 10 and the second substrate 14 are bonded by permanent bonding, pressure, heating, or a combination thereof. By this treatment, the insulating layer 15 and the second substrate 14 are firmly bonded.

In the process shown in Fig. 20D, two adhesive substrates are separated at portions of the porous Si layer 12. The second substrate side 10 " +20 has a multilayer structure of a porous Si layer 12 " / single crystal Si layer 13 / insulation layer 15 / single crystal Si substrate 14. On the first substrate 10 'side, a porous Si layer 12' is formed on the single crystal Si substrate 11.

With respect to the substrate 10 'after separation, the residual porous Si layer 12' is removed and the surface is planarized as necessary, so that the substrate is transferred to the single crystal Si substrate 11 to form another first substrate 10. Reused.

After separation of the adhesive substrate stack, the porous layer 12 " is selectively removed on the surface of the second substrate side 10 " +20 in the process shown in Fig. 20E. By this treatment, a substrate having the following structure of the single crystal Si layer 13 / insulation layer 15 / single crystal Si substrate 14, i.e., an SOI substrate, can be obtained.

In this embodiment, in a part of the process shown in FIG. 20, that is, in the process of separating the adhesive substrate stack, a liquid or gas (fluid) is sprayed onto the porous Si layer as the separation layer, and the adhesive substrate stack is separated from the separation layer. Separator is used to separate two substrates.

Basic Configuration of Separator

This separator uses a water jet method. Generally, water jet methods inject high velocity, high pressure steam water (cutting solid materials and adding abrasives) to the target, for example to cut or treat ceramic, metal, concrete, resin, rubber, or wood, , Or remove the coating from the surface or clean the surface (“Waterjet” Vol 1, No. 1 Page 4 (1984)). Conventionally, the water jet method has partially removed the material for cutting, processing, stripping and surface cleaning.

This separation device is a fragile structure of an adhesive substrate stack, which separates the substrate stack from the porous layer by spraying vapor fluid on the porous layer (separation zone) to selectively destroy the porous layer. This steam is hereinafter referred to as "jet". The fluid forming the jet is referred to as the "jet medium". As the jet medium, an organic solvent such as water, alcohol, an acid such as hydrofluoric acid or nitric acid, an alkali such as potassium hydroxide, air, nitrogen gas, a carbon dioxide gas, a rare gas, a gas such as an etching gas, or a plasma may be used.

When this separation device is applied to the manufacture or separation of semiconductor devices, for example, an adhesive substrate stack, pure water having impurity metals or particles of pixels is preferably used as a jet medium.

In this separation device, the jet is injected into the porous layer exposed on the side of the adhesive substrate stack to remove the porous layer from the periphery to the center. By this method, only the porous layer of the adhesive substrate stack with low mechanical strength is removed without impacting the main body, and the adhesive substrate stack is separated into two substrates.

2 is a view showing a schematic configuration of a separation device according to a preferred embodiment of the present invention. Separation apparatus 100 has a substrate holding unit 120, 150 having a vacuum chuck mechanism. The substrate holding parts 120 and 150 sandwich and hold the adhesive substrate stack 101 at both sides. The adhesive substrate stack 101 is a fragile structure and has a porous layer 101b. The separating apparatus 100 separates the adhesive substrate stack 101 into two substrates 101a and 101c in the porous layer 101b. For example, in the separating apparatus 100, the substrate 101a is set on the tenth substrate 10 side of FIG. 1C, and the substrate 101c is set on the second substrate side 10 "+20 of FIG. 1C. do.

The substrate holding parts 120 and 150 are located on one rotation shaft. The substrate holding part 120 is coupled to one end of the rotating shaft 104 rotatably on the shaft by the support table 109 via the bearing 108. The other end of the rotation shaft 104 is coupled to the rotation shaft of the motor 110. The adhesive substrate stack 101 vacuum-absorbed by the substrate holding unit 120 is rotated by the rotational force generated by the motor 110. The motor 110 is controlled by the controller 190 to rotate or stop the rotating shaft 104 at the rotation speed commanded from the controller 190.

The substrate holding part 150 is coupled to one end of the rotating shaft 103 slidably supported by the support table 109 via the bearing 111 and rotatably supported on the shaft. The other end of the rotating shaft 103 is coupled to the air cylinder 112 fixed to the support table 109. The air cylinder 112 is driven by the cylinder driver 191 controlled by the controller 190. When the air cylinder 112 pushes the rotary shaft 103, the adhesive substrate stack 101 is pressed by the substrate holding part 150. The sealing member 113 is fixed to the support table 109 to cover the outer surface of the rotating shaft. The sealing member 113 is made of rubber, for example, to prevent the jet medium from flowing from the bearing 111 side.

The substrate holding parts 120 and 150 have one or more suction holes 181 and 182 as vacuum chuck mechanisms, respectively. The suction holes 181 and 182 communicate with the rotary sealing parts 104a and 103a via the rotary shafts 104 and 103, respectively. The rotary seals 104a and 103a are coupled to the vacuum lines 104b and 103b, respectively. The vacuum lines 104b and 103b have a solenoid valve for controlling the detachment of the adhesive substrate stack 101 or the separated substrate. The solenoid valve is controlled by the controller 190.

The basic separation process using the separator and the problems of this process are described below. Next, an improved separation process using the separation device 100 will be described as the first mode of the present invention. The improved separation device and separation processing will be described next as a second mode of the present invention.

Basic Separation Processing

First, the rotating shaft 103 is pulled from the air cylinder 112 to separate the suction portions of the substrate holding portions 120 and 150 by an appropriate distance. The adhesive substrate stack 101 is conveyed to the space between the substrate holding parts 120 and 150 by a conveying robot, etc., and the center axis of the adhesive substrate stack and the central axes of the rotating shafts 104 and 103 are aligned. The controller 190 pushes the rotary shaft 103 with the air cylinder 112, so that the adhesive substrate stack 101 is pressed and held (state shown in FIG. 2).

The controller 190 controls the motor 110 to rotate the adhesive substrate stack 101 at a predetermined rotation speed. The rotating shaft 104, the substrate holding part 120, the adhesive substrate stack 101, the substrate holding part 150, and the rotating shaft 103 rotate integrally.

The controller 190 controls the pump 114 to send a jet medium (eg, water) to the nozzle 102, and waits until the jet injected from the nozzle 102 has stabilized. When the jet is stabilized, the controller 190 controls the nozzle driving unit 106 to move the nozzle to the center of the adhesive substrate stack 101 to inject the jet into the porous layer 101b of the adhesive substrate stack 101.

When the jet is injected, the separation force as the pressure of the jet medium continuously injected into the porous layer 101b as a weak part acts on the adhesive substrate stack 101 to form the porous layer 101b which bonds the substrates 101a and 101c together. Destroy. By this treatment, the adhesive substrate stack 101 is completely separated, for example, in a few minutes.

When the adhesive substrate stack 101 is separated into two substrates, the controller 190 controls the nozzle driver 106 to move the nozzle 102 to the standby position and then stops the operation of the pump 114. In addition, the controller 190 controls the motor 110 to rotationally stop the adhesive substrate stack 101. The controller 190 controls the above-mentioned solenoid valve so as to vacuum suck the substrates 101a and 101c from which the substrate holding parts 120 and 150 are separated.

The controller 190 then causes the air cylinder 112 to retract the axis of rotation 103. The two physically separated substrates are separated from each other by breaking the surface tension of the jet medium (eg water).

According to the above-mentioned separation treatment, the adhesive substrate stack 101 can be effectively separated with minimal impact or contamination of the substrate. Thus, this separation treatment is very promising for the separation of other similar materials or adhesive substrate stacks. However, the following problem is unresolved.

(Problem of Separation)

Fig. 3 shows a defect 101d generated by the process of separating the adhesive substrate stack into two substrates using jets while pressing and holding the center of the adhesive substrate stack at both sides and rotating at a constant speed. 101e) is a diagram schematically showing. Defects 101d and 101e are generated in a portion where the adhesive substrate stack 101 is separated by the final step of the separation process.

If the defects 101d and 101e are large, the layers adjacent to the porous layer (porous layer 101b of Fig. 3 or porous layer 12 of Figs. 1C and 20C) (e.g., Figs. 1B and 20B) are The single crystal Si layer 13 shown is impacted, and the separated substrate cannot be used in the next process (for example, the process shown in Fig. 1E or 20E).

Defects 101d and 101e are probably caused based on the following causes.

In the separation of the adhesive substrate stack 101, first, the pressing force by the substrate holding part 150 (air cylinder 112) acts on the adhesive substrate stack 101 in the sandwiching direction of the adhesive substrate stack 101. . Second, the force (separation force) for expanding the adhesive substrate stack 101 acts due to the jet medium injected into the gap formed by separating the adhesive substrate stack 101. Third, the adhesive force (reaction force opposite to the separating force) of the porous layer 101b acts on the adhesive substrate stack 101. The pressing force by the air cylinder 112 is kept substantially constant. On the other hand, when the separation area of the adhesive substrate stack becomes wider, the separation force increases rapidly. Naturally, the smaller the unseparated area, the less the adhesion.

In addition, the separation process is performed while maintaining the center portion of the adhesive substrate stack by the substrate holding portions 120 and 150. For this reason, the outer circumferential region of the adhesive substrate stack 101 bends considerably due to the pressure of the jet medium when the region is separated. However, the amount of warpage in the center region of the adhesive substrate stack is small. When the amount of warpage is large, that is, when the outer circumferential portion of the adhesive substrate stack 101 is separated, the separating force mainly acts on the portion around the unseparated area and gradually proceeds to separating. On the other hand, when the amount of warpage is small, that is, when the central portion (the area held by the substrate holding portion) of the adhesive substrate stack 101 is separated, the substrate holding portion retreats, and the separation force acts on the entire center portion of the adhesive substrate stack 101. . Perhaps for this reason, the separation proceeds by filling the unseparated areas together.

According to this assumption, the relationship of (adhesive force) + (pressing force) '' (separation force) is maintained when the outer peripheral portion of the adhesive substrate stack is separated. Excessive separation force does not act on the adhesive substrate stack, and the separation force mainly acts on the portion around the unseparated area. Therefore, the unseparated region is gradually separated by weak separation force and jet impact.

However, when the separation proceeds, the relationship of (adhesive force) + (pressing force) <(separation force) is maintained, and the substrate holding unit 150 starts to retreat. For this reason, the separation force acts more effectively on the adhesive substrate stack to speed up the separation. In the final stage of the separation process, that is, when the central portion of the adhesive substrate stack 101 is separated, the adhesive force is weak, so that the relationship of (adhesive force) + (pressing force) &lt; The substrate holding part 150 immediately retreats, and excessive separation force acts on the entire unseparated region. At this time, not only the adhesive substrate stack 101 is finally separated by the jet impact, but also the jet medium injected into the gap formed by separating the adhesive substrate stack from the entire unseparated area, that is, the force that expands the adhesive substrate stack. It is possible to mainly peel off together.

In summary, the defect is caused because the area held by the substrate holding part (center part in the above example) is mainly separated by the separating force (pressure of the jet medium).

[First Mode]

An improved separation process that reduces defects by the separation process is described below as the first mode of the present invention.

The inventors have discovered that the above defects can be reduced by the following method.

In the first step, the adhesive substrate stack 101 is partially separated so that a predetermined region of the porous layer 101b remains as an unseparated region. Preferably, the unseparated region is approximately circular, and preferably the position of the unseparated region is approximately at the center of the adhesive substrate stack.

In the second step, a force is applied to the unseparated region from a predetermined direction rather than from all directions, thereby completely separating the adhesive substrate stack 101. When a force is applied to the unseparated area from a predetermined direction, the separated area is gradually widened while applying a strong separating force to the portion of the periphery of the unseparated area and a weak separating force to the remaining part. Therefore, compared with the case where the unseparated area is separated at one time, defects in the separated area can be effectively prevented.

Hereinafter, preferred embodiments of the improved separation treatment will be described.

(First embodiment)

In this embodiment, the nozzle 102 moves to the center of the adhesive substrate stack 101 in the first process, the periphery of the adhesive substrate stack 101 is separated, and the adhesive substrate stack 101 is driven by the motor 110. The center portion remains unseparated while rotating (e.g., 8 rpm). Since the shape and position of the unseparated region 202 remaining after the first process must be uniform with respect to the plurality of adhesive substrate stacks, the separation process is performed while rotating the substrate stack 101. By this configuration, the adhesive substrate stack 101 can be treated under almost the same conditions in the second process.

4 is a diagram schematically showing a state where the adhesive substrate stack 101 is partially separated in the first process of this embodiment. Referring to FIG. 4, reference numeral 201 denotes a boundary between the separated area and the unseparated area during the first process. The outer region of the boundary line 201 is an already separated region, and the inner region of the boundary line 201 is an unseparated region. In the first step of the present embodiment, since the separation process is performed while the adhesive substrate stack 101 is rotated, the trace of the boundary line 201 is spiral. The unhatched region 202 is an unseparated region remaining after the first process. The unseparated region 202 is substantially circular in shape and is positioned at the center of the adhesive substrate stack 101. The hatched area 203 is an area (separation area) separated by performing the first process. Preferably, the unseparated region 202 is smaller than the separated region 203.

When the first process is performed while rotating the adhesive substrate stack 101, the desired region, that is, the central portion of the adhesive substrate stack 101, may remain as the unseparated region 202. For this reason, the second process can be performed on the adhesive substrate stack 101 under substantially the same conditions.

In the second process, the unseparated region 202 reduces the rotational speed of the adhesive substrate stack 101, almost stops the rotation (for example, 2 rpm or less) or completely stops the rotation of the adhesive substrate stack 101. While separating. In this case, a force may be applied to the unseparated region 202 in the predetermined direction. Most preferably, the rotation of the adhesive substrate stack 101 is completely stopped.

FIG. 5 is a diagram schematically showing a state in which the adhesive substrate stack 10 is completely separated in the second step of the present embodiment. Referring to Fig. 5, 204 shows the boundary between the separated area and the unseparated area during the second process.

When the jet is injected into the gap of the adhesive substrate stack 101 while the rotation of the adhesive substrate stack 101 is almost stopped, a force may be applied to the unseparated region 202 in a predetermined direction. Since the separation region is gradually widened while applying a strong separation force to the portion of the peripheral portion of the non-separation region 202 and a weak separation force to the remaining portion, it is possible to prevent the defect of the separated substrate.

6 is a flowchart schematically showing a control procedure of the separation device according to the present embodiment. The process shown in this flowchart is controlled by the controller 190. The process shown in this flowchart is executed after the adhesive substrate stack 101 is set in the separating apparatus 100, that is, after the adhesive substrate stack 101 is held by the substrate holding parts 120 and 150.

Steps S101 to S104 correspond to the first step. First, the controller 190 controls the motor 110 to rotate the adhesive substrate stack 101 at a predetermined rotation speed (S101). The rotation speed is preferably about 4-12 rpm and more preferably about 6-10 rpm. In this embodiment, the rotation speed is set to 8 rpm.

Next, the controller 190 controls the pump 114 to inject a jet having a predetermined pressure (for example, 500 kgf / cm 2) from the nozzle 102 (S102). The controller 190 then controls the nozzle driver 106 to the nozzle from the standby position (the position where the jet does not collide with the adhesive substrate stack 101) to the porous layer 101b on the central axis of the adhesive substrate stack 101. 102 is moved (S103). Partial separation of the adhesive substrate stack 101 is started. After an area other than the remaining unseparated area is separated (for example, after a predetermined time elapses), the controller 190 controls the nozzle driving unit 160 to move the nozzle 102 to the standby position (S104). The first step ends.

Steps S105 to S107 correspond to the second step. First, the controller 190 controls the motor 110 to almost stop the rotation of the adhesive substrate stack 101 (S105). Next, the controller 190 controls the nozzle driver 106 to move the nozzle 102 from the standby position to the porous layer 101b on the central axis of the adhesive substrate stack 101 (S106). The separation of the unseparated region 202 of the adhesive substrate stack 101 is started. After completely removing the adhesive substrate stack 101 (for example, after a predetermined time elapses), the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 to the standby position, and the pump 114 Control the jet injection to stop (S107). The second process ends.

(Second embodiment)

The second embodiment relates to a method of more satisfactorily controlling the shape and position of the unseparated region remaining after the first process. In the first step of the present embodiment, the nozzle 102 is located at the center of the adhesive substrate stack 101, and the peripheral portion of the adhesive substrate stack 101 is separated while rotating the adhesive substrate stack 101 by the motor 110. It is similar to the first embodiment in that the center remains as the unseparated region.

However, the first process of the present invention differs from the first embodiment in that the adhesive substrate stack 101 is partially separated while gradually increasing or rotating the rotational speed of the adhesive substrate stack 101 (including two steps). box). For example, the adhesive substrate stack 101 rotates at a low speed (first step) until the adhesive substrate stack 101 rotates about one revolution after the separation starts, after which the rotation speed preferably increases (second step).

The rotation speed of the adhesive substrate stack 101 in the first step is preferably about 4 to 12 rpm, more preferably 6 to 10 rpm. In this embodiment, the rotation speed is set to 8 rpm. The rotation speed of the adhesive substrate stack 101 in the second step is preferably about 25 to 35 rpm and more preferably about 28 to 32 rpm. In this embodiment, the rotation speed is set to 30 rpm.

Since the separation force cannot effectively act on the adhesive substrate stack 101 in the initial stage, the adhesive substrate stack 101 is rotated at a low speed in the initial stage of the first process. Since the unseparated region approximating the point symmetry can remain by rotating the adhesive substrate stack 101 at a high speed, the first step is performed while increasing the rotation speed gradually or stepwise.

7 is a view schematically showing a state in which the adhesive substrate stack 101 is partially separated in the first process according to the second embodiment. In the example shown in FIG. 7, the adhesive substrate stack 101 rotates at about 8 rpm until about one revolution, and then the rotation speed is increased to about 30 rpm.

The second process of this embodiment is the same as the first embodiment. 8 is a diagram schematically showing a state where the adhesive substrate stack 101 is completely separated in the second process of the second embodiment.

If the rotation speed of the adhesive substrate stack 101 increases gradually or stepwise in the first process, the unseparated region 202 left after the first process may be approximated in a circular shape, and the position of the unseparated region 202 may be May match the center of the adhesive substrate stack 101. This means that the shape of the unseparated region 202 of the adhesive substrate stack 101 can be more uniform. Therefore, compared with the first embodiment, defects generated in the second process can be reduced.

9 is a flowchart schematically showing a control procedure of the separation device 100 according to the second embodiment. The process shown in this flowchart is controlled by the controller 190. The processing shown in the flowchart is executed after the adhesive substrate stack 101 is set in the separating apparatus 100.

Steps S201 to S205 correspond to the first step. First, the controller 190 controls the motor 110 to rotate the adhesive leaf stack 101 at a low speed in step S201. The rotation speed at this time is, for example, preferably 4-12 rpm, more preferably 6-10 rpm. In this embodiment, the rotation speed is set to 8 rpm.

Next, the controller 190 controls the pump 114 to inject a jet having a predetermined pressure (for example, 500 kgf / cm 2) from the nozzle 102 (S202). Next, the controller 190 controls the nozzle driver 106 to move the nozzle from the standby position to the porous layer 101b on the central axis of the adhesive substrate stack 101 (S203). Partial separation of the adhesive substrate stack 101 is started.

The controller 190 waits for the adhesive substrate stack 101 to rotate by one rotation, for example, and controls the motor 110 to increase the rotation speed of the adhesive substrate stack 101 (S204). At this time, the rotation speed is preferably about 25 to 35 rpm, more preferably about 28 to 32 rpm. In this embodiment, the rotation speed is set to 30 rpm.

After separating an area other than the remaining unseparated area 202 (for example, after a predetermined time elapses), the controller 190 controls the nozzle driver 106 to move the nozzle 102 to the standby position (S205). ). The first step ends.

Steps S206 to S208 correspond to the second step. First, the controller 190 controls the motor 110 to almost stop the rotation of the adhesive substrate stack 101 (S206). Next, the controller 190 controls the nozzle driver 106 to move the nozzle 102 from the standby position to the porous layer 101b on the central axis of the adhesive substrate stack 101 (S207). The separation of the unseparated region 202 of the adhesive substrate stack 101 is started.

After completely removing the adhesive substrate stack 101 (for example, after a predetermined time elapses), the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 to the standby position, and the pump 114 To control the jet injection is stopped (S208). The second process ends.

(Third Embodiment)

The third embodiment also relates to a method of more satisfactorily controlling the shape and position of the unseparated region remaining after the first process. In the first process of the present embodiment, the nozzle 102 is located at the center of the adhesive substrate stack 101, and the peripheral portion of the adhesive substrate stack 101 is separated while rotating the adhesive span stack 101 by the motor 110. It is similar to the first embodiment in that the center portion remains as an unseparated region. However, the first process of this embodiment differs from the first embodiment in that the adhesive substrate stack 101 is partially separated while gradually decreasing the jet pressure (included in two steps). For example, the jet pressure is set high (for example, about 500 kgf / cm 2) until the adhesive substrate stack 101 rotates by about one revolution after the separation starts, and then the center portion remaining as an unseparated area. The jet pressure at which is not separated (for example, about 220 kgf / cm 2) is set.

The jet pressure is set high in the initial stage of the first process because the separation force in the initial stage cannot effectively act on the adhesive substrate stack 101. Since the unseparated region approximating the point symmetry can retain a predetermined low jet pressure, the first step is executed while the jet pressure is gradually or gradually reduced.

FIG. 10 is a diagram schematically showing a state in which the adhesive substrate stack 101 is partially separated in the first process of the third embodiment. In the example shown in Fig. 10, the jet pressure is set to 500 kgf until the adhesive substrate stack 101 rotates by about one revolution, and then the jet pressure is set to 220 kgf / cm &lt; 2 &gt;.

The second process of the third embodiment is the same as the first embodiment. Separation of the adhesive substrate stack 101 in the second process is approximately the same as that shown in FIG.

If the jet pressure is gradually or gradually reduced in the first process, the unseparated region 202 remaining after the first process may be approximated in a circular shape, and the position of the unseparated region 202 may be at the center of the adhesive substrate stack. Can be matched with This means that the shape of the unseparated region 202 of the adhesive substrate stack 101 can be very uniform. Therefore, compared with the first embodiment, defects generated in the first process can be reduced.

11 is a flowchart schematically showing a control procedure of the separation device 100 according to the third embodiment. The process shown in this flowchart is executed after the adhesive substrate stack 101 is set in the separating apparatus 100.

Steps S301 to S305 correspond to the first step. First, the controller 190 controls the motor 110 to continuously rotate the adhesive substrate stack 101 (S301). At this time, the rotation speed is preferably 4 to 12 rpm, more preferably 6 to 10 rpm. In this embodiment, the rotation speed is set to 8 rpm.

Next, the controller 190 controls the pump 114 to inject a jet having a high pressure (for example, 500 kgf / cm 2) from the nozzle 102 (S302). Next, the controller 190 controls the nozzle driver 106 to move the nozzle to the porous layer 101b on the central axis of the substrate stack 101 bonded at the standby position (S303). Partial separation of the adhesive substrate stack 101 is started. The controller 190 then waits for the adhesive substrate stack 101 to rotate by one revolution, for example, and controls the pump 114 to set a low jet pressure (eg 220 kgf / cm 2).

After separating an area other than the remaining unseparated area 202 (for example, after a predetermined time has elapsed), the controller 190 controls the nozzle driver 106 to move the nozzle 102 to the standby position ( S305). The first step ends.

Steps S306 to S309 correspond to the second step. First, the controller 190 controls the motor 110 to almost determine the rotation of the adhesive substrate stack 101 (S306). Next, the controller 190 controls the pump 114 to set a high jet pressure (for example, 500 kgf / cm 2) in which the non-isolated region 202 can be separated (S307).

The controller 190 controls the nozzle driver 106 to move the nozzle 102 from the standby position to the porous layer 101b on the central axis of the adhesive substrate stack 101 (S308). The separation of the unseparated region 202 of the adhesive substrate stack 101 is started. After completely removing the adhesive substrate stack 101 (for example, after a predetermined time has elapsed), the controller 190 controls the nozzle driver 106 to move the nozzle 102 to the standby position, and the pump 114. ) To stop the jet injection (S309). The second process ends.

The second and third embodiments can be combined. More specifically, in the first step, in the initial stage of separation (for example, for the first rotation), the adhesive substrate stack 101 is separated by using a high pressure jet while rotating the adhesive substrate stack 101 at a low speed. . Thereafter, the separation is continued while gradually or stepwise increasing the rotational speed of the adhesive substrate stack 101 while gradually decreasing the jet pressure. By this process, the unseparated region 202 remaining after the first process can be made more uniform.

(Example 4)

The fourth embodiment relates to a method of more satisfactorily controlling the shape and position of the unseparated region remaining after the first process. In the first step of this embodiment, the nozzle 102 is set at a position changed from the center of the adhesive substrate stack 101 by a predetermined distance (for example, 20 to 30 mm in the direction perpendicular to the jet injection direction). The peripheral portion of the adhesive substrate stack 101 is separated while rotating the adhesive substrate stack 101 (for example, 8 rpm) by 110, and the center portion remains as an unseparated region. The jet is ejected from the center of the adhesive substrate stack 101 to the changed position and remains after the first process. The shape and position of the unseparated region 202 of the plurality of adhesive substrate stacks 101 are made more uniform.

12 is a diagram schematically showing a state where the adhesive substrate stack 101 is partially separated in the first process of this embodiment. Referring to Fig. 12, reference numeral 201 denotes a boundary between the separated area and the unseparated area during the first process. The outer region of the boundary line 201 is an already separated region, and the inner region of the boundary line 201 is an unseparated region. In the first step of the present embodiment, since the separation process is performed while the adhesive substrate stack 101 is rotated, the trace of the boundary line 201 is spiral. The unhatched region 202 is an unseparated region remaining after the first process. Compared with the first embodiment, the shape of the unseparated region 202 is approximated in a circular shape, and the center thereof is adjacent to the center of the adhesive substrate stack 101. The hatched area 203 is an area separated by performing the first process. The unseparated region 202 can be brought close to point symmetry because of the weak separation force acting on the porous layer during the first process as compared with the first embodiment.

The second process of this embodiment is the same as the first embodiment. 13 is a diagram schematically showing a state in which the adhesive substrate stack 101 is completely separated in the second process.

14 is a flowchart schematically showing the control procedure of the separation device 100 according to the present embodiment. The process shown in this flowchart is controlled by the controller 190. The process shown in this flowchart is executed after the adhesive substrate stack 101 is set in the separating apparatus 100, that is, after the adhesive substrate stack 101 is held by the substrate holding parts 120 and 150.

Steps S401 to S404 correspond to the first step. First, the controller 190 controls the motor 110 to rotate the adhesive substrate stack 101 at a predetermined rotational speed (for example, 8 rpm) (S401), and then the controller 190 controls the pump 114. By controlling the control, a jet having a predetermined pressure (for example, 500 kgf / cm 2) is injected from the nozzle 102 (S402). Next, the controller 190 controls the nozzle driving unit 106 so that the porous layer at the position where the central axis of the adhesive substrate stack 101 is changed in the horizontal direction by a predetermined distance (for example, 20 to 30 mm) from the standby position ( The nozzle 102 is moved to 101b (S403). Partial separation of the adhesive substrate stack 101 is started. After an area other than the remaining unseparated area is separated (for example, after a predetermined time has elapsed), the controller 190 controls the nozzle driver 106 to move the nozzle 102 to the standby position (S404). The first step ends.

Steps S405 to S407 correspond to the second step. First, the controller 190 controls the motor 110 to almost stop the rotation of the adhesive substrate stack 101 (S405). Next, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 to the porous layer 101b on the central axis of the adhesive substrate stack 101 at the standby position (S406). The separation of the unseparated region 202 of the adhesive substrate stack 101 is started. After completely removing the adhesive substrate stack 101 (for example, after a predetermined time elapses), the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 to the standby position, and the pump 114 Control the jet injection to stop (S407). The second process ends.

In the first to fourth embodiments, the second process can be initiated without returning the nozzle 102 to the standby position at the distal end of the first process.

(Example 5)

The fifth embodiment relates to a method of using wedges instead of a fluid in a second process. As the first step, the first step of one of the first to fourth embodiments is preferable.

15 and 16 are diagrams schematically showing the configuration of a separation device (hereinafter referred to as final separation device) suitable for the second process. The final separation device 350 has first and second support portions 353 and 356 for supporting a predetermined position of the adhesive substrate stack 101 after the first process. For example, the support position is preferably a part of the periphery of the adhesive substrate stack.

The first support 353 is fixed on the stage 354. The second support 356 is fixed to the distal end of the piston of the cylinder 355 fixed on the stage 354. When the adhesive substrate stack 101 is set in the final separation device 350, the piston retracts from the cylinder 355 to form a predetermined gap between the first support portion 353 and the second support portion 356. After the adhesive substrate stack 101 is inserted into the gap, the cylinder 355 is pushed out of the cylinder 355 so that the adhesive substrate stack 101 is pressed and held from above by the second supporting portion 356.

For example, the elastic member formed of rubber may be installed at a position where the first supporting portion 353 and / or the second supporting portion 356 are in contact with the adhesive substrate stack 101. With such a configuration, the adhesive substrate stack 101 can be easily separated, and the portions supported by the first supporting portion 353 and the second supporting portion 356 can be prevented from being subjected to excessive stress during separation. . In the example shown in FIGS. 15 and 16, the elastic member 357 is attached to the second support 356.

The final separation device 350 has a wedge 351 for applying a force to the adhesive substrate stack 101 in a predetermined direction. The wedge 351 reciprocates by the cylinder 352. More specifically, the wedge 351 is pushed away from the cylinder 352 to separate the adhesive substrate stack 101, and the distal end of the wedge 351 is inserted into the gap of the adhesive substrate stack 101 as shown in FIG. 16. do. By this operation, the separation region can be gradually widened while applying a strong separation force to a portion of the unseparated region of the adhesive substrate stack 101 and a weak separation force to the remaining portion, thereby preventing defects of the separated substrate. Can be.

17 is a flowchart schematically showing the flow of the separation process using the separation device 100 and the final separation device 350. First, the adhesive substrate stack 101 is set in the separating apparatus 100 (S501). By the same process as in the first process of one of the first to fourth embodiments, the adhesive substrate stack 101 is partially separated while leaving a predetermined region as an unseparated region (S502). The adhesive substrate stack 101, which has undergone the first process, is set in the final separator 350 (S503). The adhesive substrate stack 101 is completely separated using a wedge (S504).

18 is a cross-sectional view schematically showing an automatic separation device having a separation device 100 and a final separation device 350. The automatic separation device 300 includes the separation device 100 shown in FIG. 2, the final separation device 350 shown in FIGS. 15 and 16, the substrate transport robot 340, the loader 333, A first unloader 332, a second unloader 331, a centering unit and an air blow unit 361 are provided.

Separation apparatus 100 is disposed in the chamber 310 to prevent the dispersion of the jet medium (eg, water). The chamber 310 has a shutter 320 in the window portion to load / unload the adhesive substrate stack 101 before and after the first process.

Prior to the separation process, the carrier 336 for storing the untreated adhesive substrate stack 101 is placed on the loader 333, and the empty carriers 335, 334 for storing the separated substrate are first and second languages. Located in the loaders 332 and 331, respectively.

In the centering unit 370, the guide member 371 having an arcuate surface suitable for the adhesive substrate stack 101 is pushed by the cylinder 372, so that the adhesive substrate stack is between the guide member 371 and the other guide member 373. Saddle (101). Thus, the adhesive substrate stack 101 is centered. The centering unit 370 and the final separation unit 350 are integrated. For this reason, if the adhesive substrate stack 101 processed in the first step is centered, the final separation can be done using a wedge while maintaining the portion of the adhesive substrate stack 101. In FIG. 18, the second support 356 and the like shown in FIGS. 15 and 16 will not be described.

The substrate conveyance robot 340 is held by the robot hand 341 to convey the adhesive substrate stack 101 and each separated substrate. The robot hand 341 has a function of rotating or vertically setting the held substrate.

19 is a flowchart schematically showing the peeling process by the automatic separation apparatus 300. As shown in FIG. The process shown in this flowchart is controlled by a controller (not shown). This process is performed after the carrier 336 storing the unprocessed adhesive substrate stack 101 is placed in the loader 333, and the empty carriers 335, 334 for storing the separated substrate are first and first. Two unloaders 332 and 331, respectively.

First, the adhesive substrate stack 101 is drawn out from the carrier 336 on the loader 333 by the transport robot 340 and centered by the centering unit 370 (S601). The shutter 320 is opened (S602). The surface of the centered adhesive substrate stack 101 is set vertically by rotating the robot hand by 90 °, and the adhesive substrate stack 101 is set on the separating device 100 (S603).

The shutter 320 is closed (S604). Jet injection is started (S605). The nozzle 102 moves to the center of the adhesive substrate stack 101 from the standby position along the movement path 312, and starts the separation process of the first process (S606). As the separation treatment of the first step, the first step of one of the first to fourth embodiments is suitable.

When the predetermined time has elapsed and the separation process ends while leaving the predetermined area as the unseparated area, the nozzle 102 returns to the standby position 311 along the movement path 312 (S607) and stops jet jet. (S608).

The shutter 320 is opened (S609). The robot hand 341 receives the adhesive substrate stack 101 from the separation device 100. The adhesive substrate stack 101 sets the robot hand 341 in the vertical direction by rotating the robot hand 341 by 90 °, and transfers the final hand to the final separation device 350 (centering unit 370) (S610). The shutter 320 is opened (S611).

The adhesive substrate stack 101 is centered by the centering unit 370 and is held by the first and second support members 353 and 356 and (see FIGS. 15 and 16) (S612). The bonded substrate stack is completely separated by inserting the wedge 351 into the gap in the bonded substrate stack 101 (S613). The dust generated in the final separation unit 350 and the centering unit 370 at the time of separation is removed by the air blow unit 361 (S614).

The separated upper substrate 101c is rotated by the robot hand 341 (rotated 180 °) and stored in the carrier 335 on the unrotor 332 (S615). The separated lower substrate 101a is stored in the carrier 334 on the unloader 331 by the robot hand 341.

By the above process, separation of one adhesive substrate stack 101 is completed. If the untreated adhesive substrate stack 101 remains, the above process is repeated.

According to the first mode of the present invention, it is possible to provide a suitable apparatus and method for preventing a defect in the separation of a sample such as, for example, a substrate having a separation layer.

[Second mode]

An improved separation apparatus and separation processing for solving the above problem are described below as a second mode of the present invention.

The present inventors have found based on an experiment that can reduce the defects by the following method.

The first region of the porous layer 101b is mainly separated using a jet, and the second region of the bonded substrate is mainly separated by applying vibration energy to completely separate the adhesive substrate stack 101. Preferably, the first area is an area (peripheral area) outside the area where the substrate holding parts 120 and 150 press the adhesive substrate stack 101. Preferably, the second region is a region in which the substrate holding portions 120 and 150 pressurize the adhesive substrate stack 101, that is, the porous layer 101b is temporarily peeled off by the basic separation treatment by the separating apparatus 100. Lost areas are included.

As mentioned above, when the first region of the adhesive substrate stack 110 is mainly separated using a jet, the efficiency of the separation process can be increased. If the second region of the adhesive substrate stack 101 is separated mainly using vibration energy, the above defect can be prevented. More specifically, when the second region is mainly separated using vibration energy, the second region can be gradually separated and the defect can be prevented. On the other hand, similarly to the basic separation processing by the separating device 100, when the adhesive substrate stack is completely separated using only jets having a predetermined pressure from the start of the separation to the end while rotating the adhesive substrate stack at a predetermined speed, the separation force is final. Rises sharply in stages. Defects may occur because small unisolated regions are peeled off at one time.

The first and second regions can be separated at the same time. The first region is separated first and then the second region. In contrast, the second region is separated, and then the first region is separated. Separation processing of the first and second regions can be performed by one device or another device.

Hereinafter, an embodiment of the improved separation device and separation processing according to the second mode of the present invention will be described.

(First embodiment)

Fig. 21 is a diagram schematically showing the configuration of an improved separation device according to the first embodiment of the second mode of the present invention. The same reference numerals as those of the separator shown in FIG. 2 show the same parts in FIG. 21 and the detailed description thereof is omitted.

The separator 300 of the present embodiment has an ultrasonic vibrator 1203 on the substrate holding part 150. The ultrasonic vibrator 1203 is driven according to the output signal of the oscillator 1201. The output signal of the oscillator 1201 includes signal lines 1203e and 1203f having brushes at the distal ends, rings 1203c and 1203d electrically connected to the brushes, and signal lines 1203a passing through the rotating shaft 103, It is supplied to the ultrasonic vibrator 1203 via 1203b. The ON / OFF and output signals, amplitudes and frequencies of the oscillator 1201 are controlled by the controller 190.

FIG. 23 is a flowchart schematically showing the sequence of separation processing according to the first embodiment using the separation device 300. As shown in FIG. The process shown in this flowchart is controlled by the controller 190. The process shown in this flowchart is executed after the adhesive substrate stack 101 is set in the separating apparatus 300.

In the separation process according to the first embodiment, firstly, the first region of the adhesive substrate stack 101 is separated by a jet while rotating the adhesive substrate stack 101. Next, the second region of the adhesive substrate stack 101 is separated by ultrasonic waves to completely separate the adhesive substrate stack 101. The first area is an area substantially outside the area pressed by the substrate holding parts 120 and 150. The second area is an area pressed by the substrate holding parts 120 and 150.

Steps S1101 to S1106 correspond to the first region separation processing. The controller 190 controls the motor 110 to rotate the adhesive substrate stack 101 at a predetermined rotation speed S1101. The speed of rotation is constant or variable with time. Preferably, the rotational speed is set relatively low (eg 4-12 rpm) relative to the first rotation and then relatively high (eg 25-35 rpm).

Next, the controller 190 controls the pump 114 to inject a jet having a predetermined pressure (for example, 500 kgf / cm 2) from the nozzle 102 (S1102).

The controller 190 controls the nozzle driving unit 106 to move the nozzle 102 from the standby position to the porous layer 101b on the central axis of the adhesive substrate stack 101 (S1103). The separation of the first region of the adhesive substrate stack 101 is started.

After the first region is separated (for example, after a predetermined time has elapsed), the controller 190 controls the nozzle driver 106 to move the nozzle 102 to the standby position (S1104) and the pump 114. Control to stop jet injection (S1105). The controller 190 controls the motor 110 to stop the rotation of the adhesive substrate stack 101 (S1106).

FIG. 22 is a diagram schematically showing the adhesive substrate stack 101 after the first region is separated by a jet. Referring to Fig. 22, reference numeral 211 denotes a boundary between an area not yet separated (unseparated area) and an area already separated (separated area) during the separation process using jets. In this embodiment, since the first region is separated by the jet while rotating the adhesive substrate stack 101, the trace of the boundary line 211 is spiral. The hatching area 213 is the first area, and the area without the hatching 212 is the second area.

Steps S1107 and S1108 correspond to the second area separation processing. First, the controller 190 controls the oscillator 1201 to start the driving of the ultrasonic vibrator 1203 (S1107). The ultrasonic vibrator 1203 generates ultrasonic waves (vibration energy) and starts separation of the second region using the ultrasonic waves. After the second region is separated (for example, after a predetermined time elapses), the controller 190 controls the oscillator 1201 to stop the operation of the ultrasonic vibrator 1203 (S1108). The separation process of the adhesive substrate stack 101 is completed. The adhesive substrate stack 101 may rotate when the second region is separated using ultrasonic waves.

According to this embodiment, the second region remaining after the peeling of the first region is separated using ultrasonic waves. By this configuration, the small unseparated region can be prevented from peeling off at a time, and the defects caused by the separating process can be prevented.

In addition, according to this embodiment, ultrasonic waves are applied while the jet medium is present in the adhesive substrate stack 101. In the separation of the second region, the jet medium serves as a medium for destroying the porous layer 101b, which is why the separation process is effectively performed.

In this embodiment, the first and second regions are separated by one separator 300. Instead, the first and second regions can be separated using other separators.

(Second embodiment)

The second embodiment uses the separation device 300 according to the first embodiment shown in Fig. 21, and differs from the first embodiment in the separation processing.

24 is a flowchart schematically showing the sequence of separation processing according to the second embodiment using the separation device 300. The process shown in this flowchart is controlled by the controller 190. The process shown in this flowchart is executed after setting the adhesive substrate stack 101 to the separating apparatus 300.

In the separation process according to the second embodiment, firstly, the second region of the adhesive substrate stack 101 is separated using ultrasonic waves. Thereafter, the first region of the first substrate stack 101 bonded while rotating the adhesive substrate stack 101 is separated by a jet to completely separate the adhesive substrate stack 101.

Steps S1201 and S1202 correspond to the second area separation processing. First, the controller 190 controls the oscillator 1201 to start the driving of the ultrasonic vibrator 1203 (S1201). The ultrasonic vibrator 1203 generates ultrasonic waves and starts separation of the second region using the ultrasonic waves. After separating the second region (for example, after a predetermined time elapses), the controller 190 controls the oscillator 1201 to stop the operation of the ultrasonic vibrator 1203 (S1202).

Steps S1203 to S1208 correspond to the first region separation processing. First, the controller 190 controls the motor 110 to rotate the adhesive substrate stack 101 at a predetermined rotation speed (S1203). Rotation of the adhesive substrate stack 101 may be started before separation of the second region or upon separation of the second region.

Next, the controller 190 controls the pump 114 to inject a jet having a predetermined pressure (for example, 500 kgf / cm 2) from the nozzle (S1204).

The controller 190 controls the nozzle driver 106 to move the nozzle from the standby position to the porous layer 101b on the central axis of the adhesive substrate stack 101 (S1205). The separation of the first region of the adhesive substrate stack 101 is started.

After separating the first region (for example, after a predetermined time has elapsed), the controller 190 controls the nozzle driver 106 to move the nozzle 102 to the standby position (S1206) and moves the pump 114 to the standby position. The control stops the jet of the jet (S1207). The controller 190 controls the motor 110 to stop the rotation of the adhesive substrate stack 101 (S1208).

According to the second embodiment, the second region (center) is first separated by ultrasonic waves, and the porous layer 101b (referred to as a ring-shaped region) of the periphery adjacent to the second region, which is fragile from the start, is more easily broken. . In this embodiment, the ring-shaped region is separated at the end of the separation process of the first region. For this reason, if the ring-shaped region is easily broken, the ring-shaped region can be easily separated by a jet, and can be prevented from peeling off at one time. Therefore, it is possible to reduce the defects that may occur in the separation process by the above-mentioned basic separation device.

In the present embodiment, the first and second regions may be separated by one separator 300. However, the first and second regions can be separated by other separators.

(Third Embodiment)

The third embodiment uses the separation device 300 according to the first embodiment shown in Fig. 21, and differs from the first embodiment in the separation processing.

25 is a flowchart schematically showing a separation processing procedure according to the third embodiment using the separation device 300. The process shown in this flowchart is controlled by the controller 190. The process shown in this flowchart is executed after setting the adhesive substrate stack 101 to the separating apparatus 300.

In the third embodiment, the first region separation processing using jets and the second region separation processing using ultrasonic waves are performed in parallel. By such a configuration, the time required to completely separate the adhesive substrate stack can be shortened, and the throughput can be improved.

First, the controller 190 controls the oscillator 1201 to start the driving of the ultrasonic vibrator 1203 (S1301). Ultrasonic vibrator 1203 generates ultrasonic waves and initiates separation of the second region using the ultrasonic waves.

Next, the controller 190 controls the motor 110 to rotate the bonded substrate stack 101 at a predetermined rotation speed (S1302). The controller 190 controls the pump 114 to inject a jet having a predetermined pressure (for example, 500 kgf / cm 2) from the nozzle (S1303).

The controller 190 controls the nozzle driver 106 to move the nozzle from the standby position to the porous layer 101b on the central axis of the adhesive substrate stack 101 (S1304). The separation of the first region of the adhesive substrate stack 101 is started.

After separating the first region (for example, after a predetermined time has elapsed), the controller 190 controls the nozzle driver 106 to move the nozzle 102 to the standby position (S1305) and moves the pump 114 to the standby position. The control is stopped to stop the jet (S1306). The controller 190 controls the motor 110 to stop the rotation of the adhesive substrate stack 101 (S1307).

After separating the second region (for example, after a predetermined time has elapsed), the controller 190 controls the oscillator 1201 to stop the operation of the ultrasonic vibrator 1203 (S1308).

According to this embodiment, since the first region separation processing by jet and the second region separation processing by ultrasonic wave are performed in parallel, the time required for completely separating the adhesive substrate stack 101 can be shortened, and the throughput Can be improved.

In addition, according to the present embodiment, the jet medium injected onto the adhesive substrate stack 101 serves as a medium for transmitting ultrasonic waves and effectively performs a separation process.

The order of the steps may be changed as necessary in consideration of the relationship between the time required for the first region separation processing and the time required for the second region separation processing.

As mentioned above, according to the third embodiment, it is possible to prevent defects in the separation process by separating the second region mainly using ultrasonic waves.

(Example 4)

In the fourth embodiment, the first area is separated by the separating device (first separating device) 100 shown in FIG. 2, and the second area is separated by the separating device (second separating device) having an ultrasonic bath. Are separated. The separator 300 shown in FIG. 21 may be used in place of this separator 100.

26 is a sectional views schematically showing the configuration of the second separation device. The second separation device 400 has an ultrasonic bath 401 and an ultrasonic source 403. When the second region is separated, the ultrasonic bath 401 is filled with a liquid (for example, pure water) as the ultrasonic transfer medium. The cassette 410 for accommodating the one or the plurality of adhesive substrate stacks 101 having the first region separated therein is immersed in the ultrasonic bath 401. In this state, when the ultrasonic wave (vibration energy) is transmitted from the ultrasonic source 403 to the adhesive substrate stack 101 via the ultrasonic bath 401 and the liquid 402, the second region of the adhesive substrate stack 101 may be separated. Can be.

The cassette 410 includes a plurality of partition plates 411 for separating two substrates obtained by separating the plurality of support plates 412 for supporting the plurality of adhesive substrate stacks 101 and the two substrates separated from the adhesive substrate stack 101. Have The partition 411 is provided in the lower part of the ultrasonic wave tank 401, and has a wedge shape which formed the wide sharp part (end part) toward the lower side. In order to set the adhesive substrate stack 101 in the cassette 410, a groove (i.e., a portion where two substrates are bonded to form the adhesive substrate stack 101) in each side of each adhesive substrate stack 101 is divided by a partition ( 411) is engaged with the distal end.

27 and 28 are enlarged views showing portions of the cassette 410 shown in FIG. FIG. 27 shows a state before the second region of the adhesive substrate stack 101 is separated. 28 shows a state after the second region of the adhesive substrate stack 101 is separated.

When the second region of the adhesive substrate stack is separated by ultrasonic waves applied through the ultrasonic transfer medium 402, the adhesive substrate stack 101 is completely separated. As shown in FIG. 28, the separated substrates are separated by their own weight and separated from each other along the sidewall of the partition 411.

29 and 30 schematically show the configuration of a processing system that executes a series of processes for separating the adhesive substrate stack 101 into two substrates in the porous layer 101b. FIG. 31 is a flowchart showing a control procedure of the processing system shown in FIGS. 29 and 30. The process shown in this flowchart is controlled by the controller 700.

The treatment system includes a first separation device 100 shown in FIG. 2, a second separation device 400 shown in FIG. 26, a drying furnace (for example, an IPA steam dryer unit) 500, and a controller 700. The robot 701 which carries a board | substrate, 703, 704, and the robot 702 which carries a cassette 410 are provided.

A cassette 602 for storing a substrate separated from a cassette 601 for storing one or a plurality of adhesive substrate stacks 101 (for example, the substrate shown in FIG. 1C or 20C) before processing by this processing system. And 603 are set at predetermined positions.

In this state, the robot 701 takes out one adhesive substrate stack 101 from the cassette 601 under the control of the controller 700, and sets the adhesive substrate stack in the separating apparatus 100 (S1401). Next, under the control of the controller 700, the separation device 100 separates the first region (in this case, the peripheral portion) of the adhesive substrate stack 101 using a jet (S1402). Under the control of the controller 700, the robot 701 receives the adhesive substrate stack 101 from the separating device 100, receives the adhesive substrate stack 101 in the cassette 410, and grooves on the side of the adhesive substrate stack 101. The end of the partition 411 in the cassette 410 is engaged (S1403).

The controller 700 determines whether a predetermined number of adhesive substrate stacks 101 have been processed by the separating apparatus 100 and stored in the cassette 410 (S1404). If NO in step S1404, the processing of steps S1401 to S1403 is repeated.

If YES in step S1404, under control of the controller 700, the robot 702 immerses the cassette 410 containing the predetermined number of adhesive substrate stacks 101 in the washing tank of the second separating device 400 (S1405). .

Next, under the control of the controller 700, the second separation device 400 separates the second area (in this case, the center) of each adhesive substrate stack 101 using ultrasonic waves (S1406). By this process, each substrate stack 101 is completely separated.

Under the control of the controller 700, the robot 702 takes out the cassette 410 from the ultrasonic bath of the second separation device 400 and places the cassette 410 in the drying furnace 500 (S1407). Next, under the control of the controller 700, the drying furnace 500 dries the substrate stored in the cassette (S1408).

Under the control of the controller 700, the robot 702 takes out the cassette 410 from the drying furnace 500 and conveys the cassette 410 to a predetermined position (S1409). Under the control of the controller 700, the robot 703 draws the substrate from the cassette 410 by adsorbing the bottom surface of one separate substrate (e.g., 10 'shown in FIG. 1D), It is stored in 602. The robot 704 adsorbs a lower surface of another separate substrate (e.g., (10 " +20) shown in Fig. 1E) to take the substrate out of the cassette 410 and to store it in the cassette 603. (S1410).

For one of the two substrates separated in the above manner (e.g., (10 ') in FIG. 1D), a single crystal Si substrate (e.g., for removing the porous layer on the surface to form another first substrate) This substrate can be used as shown (10) in FIG. 1B (see FIGS. 1A-1E). On the other hand, for the other one of the separated substrates (for example, (10 " +20) shown in Fig. 1D), the porous layer on the surface is selectively removed to use this substrate as the SOI substrate (Figs. 1A to 1E). Reference).

According to the fourth embodiment, defects during separation can be prevented by separating the second region in the liquid using ultrasonic waves. Further, according to the fourth embodiment, since the second regions of the plurality of adhesive substrate stacks are separated at one time, the overall processing time can be shortened and the throughput can be improved. Furthermore, according to the fourth embodiment, since the second region is separated in the ultrasonic bath, the dust generated by the first region separation process can be removed from the substrate surface.

According to the second mode of the invention, it is possible to provide a suitable apparatus and method for preventing defects in the separation of a sample, for example a substrate with a separation layer.

The present invention is not limited to the above embodiments, and various changes and modifications can be made within the spirit and scope of the present invention. Therefore, to apprise the public of the scope of the present invention, the following claims are made.

According to the present invention, it is possible to provide an apparatus and a method suitable for preventing the occurrence of a defect, for example, when separating a sample such as a substrate having a separation layer therein.

Claims (182)

In the sample processing apparatus for processing a sample having a separation layer, And a separating mechanism for separating the sample partially from the separating layer while leaving a predetermined region of the separating layer as an unseparated region. The sample processing device according to claim 1, wherein the separation mechanism has an injection unit for injecting fluid into the separation layer to partially separate the sample using the fluid. The sample processing device according to claim 1 or 2, wherein the sample is made of a plate member having a layer having a weak structure as a separation layer. The sample processing apparatus according to any one of claims 1 to 3, wherein the separation mechanism partially separates the sample while leaving a substantially circular area as an unseparated area. 4. A sample processing apparatus according to any one of claims 1 to 3, wherein the separation mechanism partially separates the sample while leaving a substantially circular region at a substantially central portion of the separation layer as an unseparated region. The method according to any one of claims 1 to 5, wherein the separation mechanism, A drive mechanism for rotating the sample about an axis perpendicular to the separation layer, An injection unit for injecting fluid into the separation layer, The sample is partially separated while the sample is rotated by the drive mechanism. 7. The sample processing apparatus according to claim 6, wherein the driving mechanism rotates the sample at a low speed in the initial step of partially separating the sample, and then rotates the sample at a high speed. 7. The sample processing device according to claim 6, wherein the driving mechanism increases the rotational speed of the sample stepwise or stepwise when the sample is partially separated. 7. The sample processing device according to claim 6, wherein the drive mechanism changes the rotational speed of the sample when the sample is partially separated. 7. The sample processing apparatus of claim 6, wherein the separation unit reduces the pressure of the fluid after injecting the fluid at high pressure in the initial stage of the partial separation process of the sample. 7. The sample processing apparatus of claim 6, wherein the jetting unit gradually or gradually reduces the pressure of the fluid to be injected when the sample is partially separated. 7. The sample processing device of claim 6, wherein the jetting unit changes the pressure of the fluid to be injected when the sample is partially separated. The sample processing device according to claim 6, wherein the spraying part injects the fluid to a position away from the center of the separating layer by a predetermined distance in the plane direction when the sample is partially separated. 14. A sample processing apparatus according to any one of claims 1 to 13, wherein the unseparated region is smaller than the region in which the separated layer is separated by a partial separation process. The sample processing apparatus according to any one of claims 1 to 14, wherein the sample is formed by adhering a first plate member having a weak layer to the second plate member. 16. The sample processing device of claim 15, wherein the fragile layer comprises a porous layer. 18. A sample processing apparatus according to claim 16 or 17, wherein the first plate member is made of a semiconductor substrate. 18. The sample processing apparatus according to claim 17, wherein the first flat member is formed by forming a porous layer on one surface of the semiconductor substrate and forming a nonporous layer on the porous layer. 19. The sample processing device of claim 18, wherein the nonporous layer comprises a single crystal semiconductor layer. In the sample processing method for processing a sample having a separation layer, And a separation step of partially separating the sample from the separation layer while leaving a predetermined area of the separation layer as an unseparated layer. 21. The sample processing method according to claim 20, wherein the separating step comprises partially separating the sample by spraying a fluid on the separation layer. 22. The treatment method according to claim 20 or 21, wherein the sample is made of a plate member having a layer having a weak structure as a separation layer. 23. The sample processing method according to any one of claims 20 to 22, wherein the separating step comprises partially separating a sample while leaving a substantially circular area as an unseparated area. 24. The sample processing method according to any one of claims 20 to 23, wherein the separating step comprises partially separating a sample while leaving an approximately circular region at a substantially central portion of the separation layer as an unseparated region. 25. A sample processing method according to any one of claims 20 to 24, wherein the separating step comprises partially separating the sample by spraying a fluid on the separating layer while rotating the sample about an axis perpendicular to the separating layer. . The sample processing method according to claim 25, wherein the sample is rotated at a low speed and then at a high speed in the initial stage of the separation step. 26. The sample processing method according to claim 25, wherein the separating step comprises gradually or stepwise increasing the rotational speed of the sample. The sample processing method according to claim 25, wherein the separating step comprises varying the rotational speed of the sample. 26. The sample processing method according to claim 25, wherein the separating step comprises using a high pressure fluid in an initial step and then using a low pressure fluid. 27. The sample processing method of claim 25, wherein the separating step consists in gradually or gradually decreasing the pressure of the fluid to be used for separation. 26. The sample processing method of claim 25, wherein the separating step comprises changing a pressure of the fluid to be used for separation. 26. The sample processing method according to claim 25, wherein the separation step is performed by injecting a fluid at a position away from the center of the separation layer by a predetermined distance in the planar direction. 33. The sample processing method according to any one of claims 20 to 32, wherein the unseparated region is smaller than the region in which the separating layer is separated in the separating step. 34. The sample processing method according to any one of claims 20 to 33, wherein the sample is formed by adhering a first plate member having a weak layer to the second plate member. 35. The sample processing method of claim 34, wherein the fragile layer comprises a porous layer. 36. A sample processing method according to claim 34 or 35, wherein the first plate member is made of a semiconductor substrate. The sample processing method according to claim 36, wherein the first flat member is formed by forming a porous layer on one surface of the semiconductor substrate and forming a nonporous layer on the porous layer. 38. The sample processing method of claim 37, wherein the nonporous layer comprises a single crystal semiconductor layer. In the sample separation device for separating a sample having a separation layer from the separation layer, First separating means for separating the sample partially from the separating layer while leaving a predetermined region of the separating layer as an unseparated layer; And a second separating means for completely separating the sample by applying a force from a predetermined direction to the unseparated area of the sample processed by the first separating means. 40. A sample separation device according to claim 39, wherein the sample consists of a plate member having a layer having a weak structure as a separation layer. 41. A sample separation device according to claim 39 or 40, wherein the first separation means partially separates the sample while leaving a substantially circular area as an unseparated area. 41. A sample separation apparatus according to claim 39 or 40, wherein the first separation means partially separates the sample while leaving an approximately circular region at an approximately central portion of the separation layer as an unseparated region. 43. The compound of any one of claims 39 to 42 wherein The first separating means separates the sample by spraying a fluid on the separating layer while rotating the sample about an axis perpendicular to the separating layer, And the second separating means holds the sample without rotating the sample formed by the partial separation process and injects a fluid into the gap in the sample to separate the unseparated region remaining in the sample. 43. The method according to any one of claims 39 to 42, wherein the first separation means partially separates the sample by spraying fluid on the separation layer of the sample while rotating the sample about an axis perpendicular to the separation layer. And the separating means separates the unseparated region remaining in the sample by injecting a fluid into the gap in the sample while almost stopping the rotation of the sample formed by the partial separation process. 43. A sample separation apparatus according to any one of claims 39 to 42, wherein the second separation means inserts wedges into the gaps in the sample formed by the partial separation treatment to completely separate the sample. 46. A sample separation apparatus according to any one of claims 39 to 45, wherein an unseparated region remaining after being processed by said first separating means is smaller than a region separated by said first separating means. 47. A sample separation device according to any one of claims 39 to 46, wherein the sample is formed by adhering a first plate member having a weak layer to the second plate member. 48. The sample separation device of claim 47, wherein the fragile layer comprises a porous layer. 49. A sample separation device according to claim 47 or 48, wherein the first plate member is made of a semiconductor substrate. 50. The sample separation device according to claim 49, wherein the first flat member is formed by forming a porous layer on one surface of the semiconductor substrate and forming a nonporous layer on the porous layer. 51. The separation device of claim 50, wherein the nonporous layer comprises a single crystal semiconductor layer. In the sample separation device for separating a sample having a separation layer from the separation layer, A drive mechanism for rotating the sample about an axis perpendicular to the separation layer of the sample; An injection unit for injecting fluid into the separation layer, The sample is partially separated from the separation layer by using the fluid from the jetting portion by rotating the sample by the driving mechanism and leaving a predetermined area of the separation layer as an unseparated layer, And a sample is completely separated by separating the unseparated region by using the fluid from the jetting portion while substantially stopping the rotation of the sample. 53. A sample separation device according to claim 52, wherein the sample is made of a plate member having a layer having a fragile structure as a separation layer. 54. The sample separation device according to claim 52 or 53, wherein when the sample is partially separated, a substantially circular region remains as an unseparated region. 55. The sample separation device according to claim 52 or 53, wherein, when the sample is partially separated, a substantially circular region remains at approximately the center of the separation layer as an unseparated region. The sample separation device according to any one of claims 52 to 55, wherein the unseparated area remaining after the partial separation process is smaller than the area separated by the partial separation process. 57. The sample separation device according to any one of claims 52 to 56, wherein the sample is formed by adhering a first plate member having a weak layer to the second plate member. 58. A sample separation device according to claim 57, wherein the weak layer consists of a porous layer. 59. The sample separation device according to claim 57 or 58, wherein the first plate member is made of a semiconductor substrate. 60. The sample separation device according to claim 59, wherein the first flat member is formed by forming a porous layer on one surface of the semiconductor substrate and forming a nonporous layer on the porous layer. 61. The sample separation device of claim 60, wherein the nonporous layer comprises a single crystal semiconductor layer. In the sample separation device for separating a sample having a separation layer from the separation layer, A first separation mechanism that partially separates the sample from the separation layer while leaving a predetermined area of the separation layer as an unseparated area; And a second separation mechanism for completely separating the sample by applying a force from a predetermined direction to a gap formed in the sample by the separation treatment by the first separation mechanism. 63. The sample separation device of claim 62, wherein the first separation mechanism partially separates the sample by spraying fluid on the separation layer while rotating the sample about an axis perpendicular to the separation layer. 64. The sample separation device according to claim 62 or 63, wherein the second separation mechanism completely removes the sample by inserting a wedge into a gap in the sample. 65. The sample separation device according to any one of claims 62 to 64, further comprising a transport robot for transporting the sample processed by the first separation mechanism to the second separation mechanism. 66. A sample separation apparatus according to claim 65, further comprising a positioning mechanism for positioning a sample with respect to the first separation mechanism or the second separation mechanism. 67. The sample separation device according to any one of claims 62 to 66, wherein the unseparated area remaining after being processed by the first separation device is smaller than the area separated by the first separation device. 68. A sample separation device according to any one of claims 62 to 67, wherein the sample is formed by adhering a first plate member having a weak layer to the second plate member. 69. The sample separation device of claim 68, wherein the fragile layer comprises a porous layer. 70. A sample separation device according to claim 68 or 69, wherein the first plate member is made of a semiconductor substrate. 71. The sample separation device according to claim 70, wherein the first flat member is formed by forming a porous layer on one surface of the semiconductor substrate and forming a nonporous layer on the porous layer. 72. The sample separation device of claim 71, wherein the nonporous layer comprises a single crystal semiconductor layer. In the sample separation device for separating a sample having a separation layer from the separation layer, A holding mechanism for setting the sample to a substantially rest state by partially holding the sample partially separated from the separation layer while leaving a predetermined region of the separation layer as an unseparated layer; And a separation mechanism for completely separating the sample by applying a force from a predetermined direction to the unseparated region of the sample held by the holding mechanism. 74. A sample separation device according to claim 73, wherein the sample consists of a plate member having a layer having a fragile structure as a separation layer. 75. The sample separation device according to claim 73 or 74, wherein the separation mechanism injects fluid into the gap in the sample formed by the partial separation treatment to completely separate the sample. 75. A sample separation apparatus according to claim 73 or 74, wherein said separation mechanism inserts a wedge into the gap in the sample formed by the partial separation treatment to completely separate the sample. 77. A sample separation device according to any one of claims 73 to 76, wherein the unseparated zone is smaller than the already separated zone. 78. The sample separation device according to any one of claims 73 to 77, wherein the sample is formed by adhering a first plate member having a weak layer to the second plate member. 79. The sample separation device of claim 78, wherein the fragile layer comprises a porous layer. 79. A sample separation device according to claim 78 or 79, wherein the first plate member is made of a semiconductor substrate. 81. The sample separation device according to claim 80, wherein the first flat member is formed by forming a porous layer on one surface of the semiconductor substrate and forming a nonporous layer on the porous layer. 84. The sample separation device of claim 81, wherein the nonporous layer comprises a single crystal semiconductor layer. In the sample separation method for separating a sample having a separation layer from the separation layer, A first separation step of partially separating the sample from the separation layer while leaving a predetermined area of the separation layer as an unseparation area; And a second separation step for completely separating the sample by applying a force to a non-separation area of the sample processed in the first separation step from a predetermined direction. 84. The sample separation method according to claim 83, wherein the sample is made of a plate member having a layer having a weak structure as a separation layer. 85. A sample separation method according to claim 83 or 84, wherein the first separation step comprises partially separating a sample while leaving a substantially circular area as an unseparated area. 85. The sample separation method according to claim 83 or 84, wherein the first separation step comprises partially separating the sample while leaving a substantially circular area as an unseparated area at approximately the center of the separation layer. 87. The method of any of claims 83-86, The first separation step consists of spraying a sample on the separation layer while rotating the sample about an axis perpendicular to the separation layer to partially separate the sample, The second separation step consists of holding the sample without rotating the sample formed by the partial separation process and injecting a fluid into the gap in the sample to separate the unseparated region remaining in the sample. Way. 87. The method of any of claims 83-86, The first separation step consists of spraying the sample on the separation layer of the sample while rotating the sample about an axis perpendicular to the separation layer to partially separate the sample, The second separation step is characterized in that the fluid is injected into the gap in the sample while the rotation of the sample formed by the partial separation process is almost stopped, thereby separating the unseparated region remaining in the sample. 87. The method of any of claims 83-86, And the second separation step comprises inserting a wedge into the gap in the sample formed by the partial separation process to completely separate the sample. 91. The method of any of claims 83-89, The unseparated area remaining after the first separation step is smaller than the area separated in the first separation step. 91. The method of any of claims 83-90, The sample is a sample separation method, characterized in that formed by adhering the first plate member having a weak layer to the second plate member. 92. The method of claim 91, wherein the fragile layer comprises a porous layer. 92. The method of claim 91 or 92, wherein the first plate member is made of a semiconductor substrate. 95. The method of claim 93, wherein the first flat member is formed by forming a porous layer on one surface of the semiconductor substrate and forming a nonporous layer on the porous layer. 95. The method of claim 94, wherein the nonporous layer comprises a single crystal semiconductor layer. In the sample separation method for separating a sample having a separation layer from the separation layer, A stop step of setting the sample to a substantially idle state by partially retaining a sample partially separated from the separation layer while leaving a predetermined area of the separation layer as an unseparated area; And a separation step of completely separating the sample by applying a force from a predetermined direction to the unseparated area of the sample in the holding state. 97. The method of claim 96, wherein the sample is composed of a plate member having a layer having a fragile structure as a separation layer. 98. A sample separation method according to claim 96 or 97, wherein the separation step consists of injecting fluid into the gap in the sample formed by the partial separation treatment to completely separate the sample. 98. A sample separation method according to claim 96 or 97, wherein the separating step comprises inserting a wedge into the gap in the sample formed by the partial separation treatment to completely separate the sample. 101. The method of any one of claims 96-99, wherein the unseparated region is smaller than the already separated region. 101. The method of any one of claims 96 to 100, wherein the sample is formed by adhering a first plate member having a fragile layer to a second plate member. 102. The method of claim 101, wherein the fragile layer comprises a porous layer. 103. The method of claim 101 or 102, wherein the first plate member is made of a semiconductor substrate. 103. The method of claim 103, wherein the first flat member is formed by forming a porous layer on one surface of the semiconductor substrate and forming a nonporous layer on the porous layer. 107. The method of claim 104, wherein the nonporous layer comprises a single crystal semiconductor layer. 83. A method of manufacturing a semiconductor substrate, wherein the semiconductor substrate is produced by applying the separator according to any one of claims 39 to 82 to several processes. A semiconductor substrate manufactured by applying the separator according to any one of claims 39 to 82 to several processes. 107. A method of manufacturing a semiconductor substrate, wherein the semiconductor substrate is produced by applying the separation method of any one of claims 83 to 105 to several processes. A semiconductor substrate separated by the separation method according to any one of claims 83 to 105. A semiconductor substrate produced by applying the separation method of any one of claims 83 to 105 to several processes. In the sample separation device for separating a sample having a separation layer from the separation layer, First separation means for mainly separating the first region of the separation layer by injecting a fluid into the separation layer; It consists of a second separation means for mainly separating the second region of the separation layer using vibration energy, A sample separation device, characterized in that the sample is separated from the separation layer by the first and second separation means. 117. The sample separation device according to claim 111, wherein the sample is made of a plate member having a layer having a weak structure as a separation layer. 112. The method of claim 111 or 112, And the first region is a region at the periphery of the separation layer, and the second region is a region at the center of the separation layer. 117. The method of any one of claims 111-113, The first separation means is a sample separation device, characterized in that for mainly separating the first area by injecting a fluid to the separation layer while rotating the sample about an axis perpendicular to the separation layer. 117. The method of any one of claims 111-114, The separation device further includes support means for supporting a sample in the separation process by the first and second separation means, And the second separating means supplies the vibration energy to the sample from the region where the supporting means is in contact with the sample. 116. The sample separation device according to claim 115, wherein the support means pressurizes a portion supporting the sample by sandwiching a portion near the center of the sample from both sides, and has a pair of opposing support surfaces having a substantially circular shape. 118. The apparatus of claim 116, wherein the first region is actually located outside of the region pressed by the support surface, And the second region is a region substantially pressurized by the support surface. 117. The method of any one of claims 111-114, The second separating means, A treatment tank for processing a sample, Having a vibration source for generating vibration energy, And the vibration energy generated by the vibration source is supplied to the sample through the liquid in the treatment tank while the sample treated by the first separation means is impregnated in the treatment tank. 118. The sample separation device according to claim 118, wherein said treatment tank comprises a dividing means for dividing the separated sample when the sample is completely separated by vibration energy. 117. The method of any one of claims 111-117, And said first separating means primarily separates the first region, and then said second separating means mainly separates the second region. 117. The method of any one of claims 111-117, And said second separating means primarily separates the second region, and then said first separating means mainly separates the first region. 117. The method of any one of claims 111-117, And at least a part of the separation processing by the first separation means and the separation processing by the second separation means are performed in parallel. 123. The sample separation device according to any one of claims 111 to 122, wherein the sample is formed by adhering a first plate member having a weak layer to the second plate member. 126. The sample separation device of claim 123, wherein the weak layer comprises a porous layer. 124. The sample separation device of claim 123 or 124, wherein the first plate member is made of a semiconductor substrate. 126. The sample separation device according to claim 125, wherein the first flat member is formed by forming a porous layer on one surface of the semiconductor substrate and forming a nonporous layer on the porous layer. 126. The sample separation device of claim 126, wherein the nonporous layer comprises a single crystal semiconductor layer. In the sample separation device for separating a sample having a separation layer from the separation layer, A support for supporting a sample; An injection unit for injecting fluid into the separation layer of the sample supported by the support unit; And a vibration source for generating vibration energy to be supplied to the sample, A sample separation device, characterized in that the sample is separated by the fluid and vibration energy. 129. The sample separation device of claim 128, wherein the sample is made of a plate member having a layer having a weak structure as a separation layer. 129. The method of claim 128 or 129, wherein The support unit is a sample separation device, characterized in that for supporting the sample while rotating the sample about an axis perpendicular to the separation layer. 131. The method of claim 128, wherein A control unit for causing the injection unit to inject a fluid to mainly separate the first region of the separation layer by the fluid, and a control unit for causing the vibration source to generate vibration energy for mainly separating the second region of the separation layer by the vibration energy. Sample separation apparatus characterized in that it further provided. The sample separation apparatus of claim 131, wherein the control unit controls the spraying unit and the vibration source so as to first separate the first region mainly by a fluid and then mainly separate the second region by vibration energy. Device. 143. The sample separation apparatus of claim 131, wherein the controller controls the spraying unit and the vibration source to first separate the second region mainly by vibration energy and then mainly separate the first region by fluid. Device. The sample according to claim 131, wherein the control unit controls the jetting unit and the vibration source to perform at least a part of the separation process of the sample by the fluid and the separation process of the sample by the vibration energy. Separator. 136. The sample separation device of any one of claims 131 to 134, wherein the first region is a region at the periphery of the separation layer and the second region is a region at the center of the separation layer. The said support part pressurizes the part which supports a sample by sandwiching the part near the center part of a sample from both sides, and has a pair of substantially circular opposing support surfaces of Claims 131-134. Sample separation device. 136. The sample separation apparatus of claim 136, wherein the first region is actually located on an outer periphery of the region pressed by the support surface, and the second region is a region approximately pressed by the support surface. 138. The sample separation device according to any one of claims 128 to 137, wherein said vibration source is disposed in a support. 138. The sample separation device according to any one of claims 128 to 137, wherein said vibration source is disposed at the end of said support portion in which said support portion contacts a sample. 133. The separator according to any one of claims 128 to 130, wherein the separation device further comprises a treatment tank for processing the sample. In order to separate the sample using the fluid, the fluid is injected into the separation layer of the sample while supporting the sample by the support, In order to separate the sample using the vibration energy, the vibration energy generated by the vibration source is supplied to the sample through the liquid in the processing tank while the sample is impregnated in the processing tank. 141. The sample separation device according to claim 140, wherein the treatment tank has a partition member for dividing the separated sample when the sample is completely separated by vibration energy. 145. The sample separation device according to claim 140 or 141, further comprising a drying furnace for drying the sample processed in said processing tank. 145. The sample separation device according to any one of claims 128 to 142, further comprising a classification mechanism for classifying the separated sample. 145. The sample separation device according to claim 140 or 141, further comprising a conveying mechanism for storing a sample from the support and conveying the sample to the processing tank. 141. The transport apparatus according to claim 140, further comprising a conveying mechanism for accommodating a plurality of samples sequentially from said support portion, storing a plurality of samples sequentially in one cassette, and setting a cassette in said processing tank. Sample Separator. 142. The sample separation device according to claim 142, further comprising a transport mechanism for transporting a sample between the support, the processing tank, and the drying furnace. 145. The method of claim 142, wherein the plurality of samples are sequentially stored from the support, the plurality of samples are sequentially stored in one cassette, the cassette is impregnated in the processing tank, and the processing in the processing tank is completed. And a conveying mechanism for storing the cassette from the processing tank and conveying the cassette to the drying furnace. 148. The sample separation apparatus according to claim 147, further comprising a sorting mechanism for separating the sample by withdrawing the separated sample from the drying furnace after the separated sample is dried in the drying furnace. 148. The sample separation device according to any one of claims 128 to 148, wherein the sample is formed by adhering a first plate member having a weak layer to the second plate member. 149. The sample separation device of claim 149, wherein the fragile layer comprises a porous layer. 151. The sample separation device according to claim 149 or 150, wherein the first plate member is made of a semiconductor substrate. 151. The sample separation device according to claim 151, wherein the first flat member is formed by forming a porous layer on one surface of the semiconductor substrate and forming a nonporous layer on the porous layer. 152. The sample separation device of claim 152, wherein the nonporous layer comprises a single crystal semiconductor layer. In the sample separation method for separating a sample having a separation layer from the separation layer, A first separation step of injecting a fluid into the separation layer for mainly separating the first region of the separation layer, A second separation step for mainly separating the second region of the separation layer using vibration energy, Sample separation method characterized in that the separation layer is separated in the first and second separation step. 154. The sample separation method according to claim 154, wherein the sample is made of a plate member having a layer having a weak structure as a separation layer. 154. The method of claim 154 or 155, wherein the first region is a region at the periphery of the separation layer and the second region is a region at the center of the separation layer. 158. The method of any one of claims 154 to 156, wherein the first separation step consists in jetting fluid to the separation layer while mainly separating the first region while rotating the sample about an axis perpendicular to the separation layer. Sample separation method. 161. The method of any one of claims 154-157, wherein the first and second bunting steps consist of supporting the sample by the same support portion, The second separation step is a sample separation method, characterized in that for supplying the vibration energy to the sample from the portion of the support portion in contact with the sample. 158. The sample separation method according to claim 158, wherein the support portion sandwiches a portion near the center of the sample from both sides to press the portion supporting the sample, and has a pair of opposing support surfaces that are substantially circular in shape. 161. The apparatus of claim 159, wherein the first region is actually located on an outer periphery of the region pressed by the support surface, And the second region is a region substantially pressurized by the support surface. 158. The method according to any one of claims 154 to 157, wherein the second split step comprises impregnating the sample treated in the first split step into a processing tank and supplying vibration energy to the sample through the liquid in the processing tank. Sample separation method. 161. The sample separation method according to any one of claims 154 to 160, wherein the first separation step is performed first and then the second separation step is performed. 161. The sample separation method according to any one of claims 154 to 160, wherein the second separation step is performed first and then the first separation step is performed. 161. The sample separation method according to any one of claims 154 to 160, wherein at least some of the first and second separation steps are performed in parallel. In the sample separation method for separating a sample having a separation layer from the separation layer, And a separation step of separating the sample by supplying vibration energy to the sample while simultaneously injecting a fluid into the separation layer of the sample. 167. The method of claim 165, wherein the separating step comprises separating the sample while rotating the sample about an axis perpendicular to the separating layer. In the sample separation method for separating a sample having a separation layer from the separation layer, And a separation step of separating the sample by supplying vibration energy to a portion near the center of the sample while simultaneously injecting a fluid into the separation layer of the sample. 167. The method of claim 167, wherein the separating step comprises separating the sample while rotating the sample about an axis perpendicular to the separating layer. In the sample separation method for separating a sample having a separation layer from the separation layer, And a separation step of injecting a fluid into the separation layer of the sample and simultaneously supplying vibration energy to the sample and injecting the fluid into the sample to separate the sample. 179. The method of claim 169, wherein the separating step comprises separating the sample while rotating the sample about an axis perpendicular to the separation layer. In the sample separation method for separating a sample having a separation layer from the separation layer, And a separation step of separating a sample by supplying vibration energy to a predetermined portion of the sample while simultaneously spraying a fluid on the separation layer of the sample while supporting a predetermined portion of the sample. 172. The method of claim 171, wherein the separating step comprises separating the sample while rotating the sample about an axis perpendicular to the separating layer. 172. The sample separation method according to any one of claims 154 to 172, wherein the sample is formed by adhering a first plate member having a weak layer to the second plate member. 178. The method of claim 173, wherein the weak layer comprises a porous layer. 174. The method of claim 173 or 174, wherein the first plate member is made of a semiconductor substrate. 175. The method of claim 175, wherein the first flat member is formed by forming a porous layer on one surface of the semiconductor substrate and forming a nonporous layer on the porous layer. 176. The sample separation method of claim 176, wherein the nonporous layer comprises a single crystal semiconductor layer. 153. A method of manufacturing a semiconductor substrate, wherein the semiconductor substrate is produced by applying the separator according to any one of claims 111 to 153 to several processes. A semiconductor substrate manufactured by applying the separator according to any one of claims 111 to 153 to several processes. A method for manufacturing a semiconductor substrate, comprising manufacturing the semiconductor substrate by applying the separation method according to any one of claims 154 to 176 to several processes. A semiconductor substrate separated by the separation method according to any one of claims 154 to 176. 177. A semiconductor substrate manufactured by applying the separation method of any one of claims 154 to 176 to several processes.