JP2000068172A - Apparatus and method of separating sample - Google Patents

Abstract

PROBLEM TO BE SOLVED: To avoid causing defects in separating laminated substrates having separating layers inside. SOLUTION: A first (peripheral) region and second (central) region of a laminated substrate 101 having a porous layer 101b inside are separated by a jet and ultrasonic wave, respectively, i.e., the first region is separated by a jet from a nozzle with the laminated substrate 101 being rotated and the second region is separated by an ultrasonic wave generated from an ultrasonic oscillator 203.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for separating a sample, and more particularly to a separation apparatus and a separation method suitable for separating a sample having a separation layer therein by the separation layer. About.

[0002]

2. Description of the Related Art As a substrate having a single crystal Si layer on an insulating layer, a substrate (SOI substrate) having an SOI (silicon on insulator) structure is known. Devices using this SOI substrate have a number of advantages that cannot be achieved with a normal Si substrate. The advantages include, for example, the following. (1) Dielectric separation is easy and suitable for high integration. (2) Excellent radiation resistance. (3) The stray capacitance is small, and the operation speed of the element can be increased. (4) No well step is required. (5) Latch-up can be prevented. (6) A complete depletion type field effect transistor can be formed by thinning.

[0003] Since the SOI structure has various advantages as described above, research on a forming method thereof has been advanced in recent decades.

As an SOI technique, SOS (silicon on s) is conventionally formed by forming Si on a single crystal sapphire substrate by heteroepitaxial growth by a CVD (chemical vapor deposition) method.
apphire) technology is known. Although this SOS technology has gained a reputation as the most mature SOI technology,
Practical due to large number of crystal defects due to lattice mismatch at the interface between the Si layer and the underlying sapphire substrate, mixing of aluminum constituting the sapphire substrate into the Si layer, cost of the substrate, delay in increasing the area, etc. Has not progressed.

[0005] Next to the SOS technology, various SOI technologies have appeared. With respect to this SOI technology, various methods have been attempted with the aim of reducing crystal defects and reducing manufacturing costs. As this method, a method of implanting oxygen ions into a substrate to form a buried oxide layer, bonding two wafers with an oxide film interposed therebetween, and polishing or etching one of the wafers to form a thin single-crystal Si layer A method of leaving on an oxide film, furthermore, hydrogen ions are implanted at a predetermined depth from the surface of the Si substrate on which the oxide film is formed, and after bonding with the other substrate, a thin film is formed on the oxide film by heat treatment or the like. A method of removing the bonded substrate (the other substrate) while leaving the single crystal Si layer, or the like can be given.

The present applicant has disclosed a new SOI technique in Japanese Patent Application Laid-Open No. Hei 5-21338. According to this technique, a first substrate in which a non-porous single crystal layer (including a single crystal Si layer) is formed on a single crystal semiconductor substrate in which a porous layer is formed is connected to a second substrate via an insulating layer. After bonding, the two substrates are separated by a porous layer, and the non-porous single crystal layer is transferred to a second substrate. This technology has an excellent thickness uniformity of the SOI layer, can reduce the crystal defect density of the SOI layer, has a good surface flatness of the SOI layer, and does not require an expensive special specification manufacturing apparatus. Is, several hundred dollars
It is excellent in that an SOI substrate having an SOI film in a range of about 10 μm to about 10 μm can be manufactured by the same manufacturing apparatus.

[0007] Further, the present applicant has disclosed in
In No. 9, after the first substrate and the second substrate are bonded to each other, the first substrate is separated from the second substrate without breaking, and then the separated surface of the first substrate is removed. A technique has been disclosed in which a porous layer is formed again after smoothing and reused. This technique has excellent advantages that the first substrate can be used without waste, so that the manufacturing cost can be greatly reduced and the manufacturing process is simple.

[0008]

In the above technique,
When a substrate in which two substrates are bonded to each other (hereinafter, a bonded substrate) is separated by a porous layer, it is desired to separate the substrates with good reproducibility without damaging the substrates.

The present invention has been made in view of the above background, and is suitable for, for example, preventing occurrence of defects when separating a sample such as a substrate having a separation layer therein. It is an object to provide an apparatus and a method.

[0010]

According to a first aspect of the present invention, there is provided a separation apparatus for separating a sample having a separation layer therein by the separation layer. First separating means for separating mainly the first region of the separation layer by injecting a fluid toward the layer, and second separation for separating mainly the second region of the separation layer by vibration energy Means for separating the sample at the separation layer by the first and second separation means.

In the separation apparatus according to the first aspect, for example, the sample is preferably a plate-like member having a layer having a fragile structure as the separation layer.

In the separation device according to the first aspect, for example, the first region is a region on a peripheral side of the separation layer, and the second region is a center side of the separation layer. It is preferable that it is the area | region of.

[0013] In the separation apparatus according to the first aspect, for example, the first separation means rotates the sample around the axis orthogonal to the separation layer and turns the sample toward the separation layer. Preferably, the first region is mainly separated by injecting a fluid.

In the separation apparatus according to the first aspect, for example, the separation device further includes a support unit for supporting the sample during the separation process by the first and second separation units, and the second separation unit includes the support unit. It is preferred that the means supply vibrational energy to the sample from a part in contact with the sample.

In the separation apparatus according to the first aspect, for example, the support means has a pair of opposing support surfaces for pressing and supporting the vicinity of the center of the sample so as to sandwich the sample from both sides, Preferably, the support surface is substantially circular.

In the separation device according to the first aspect, for example, the first region is a region substantially on the outer peripheral side than a region pressed by the support surface, and
Preferably, the region is a region substantially inside the region pressed by the support surface.

In the separation apparatus according to the first aspect, for example, the second separation means has a processing tank for processing a sample, and a vibration source for generating vibration energy, and In a state where the sample processed by the means is immersed in the processing tank, it is preferable that vibration energy generated by the vibration source is supplied to the sample via the liquid in the processing tank.

In the separation apparatus according to the first aspect, for example, the processing tank has a separation means for separating the separated samples from each other when the samples are completely separated by vibration energy. Is preferred.

In the separation device according to the first aspect, for example, first, the first region is mainly separated by the first separation unit, and then the second region is mainly separated by the second separation unit. Separation is preferred.

In the separation apparatus according to the first aspect, for example, first, the second region is mainly separated by the second separation unit, and then the first region is mainly separated by the first separation unit. Separation is preferred.

In the separation apparatus according to the first aspect, it is preferable that, for example, at least a part of the separation processing by the first separation means and the separation processing by the second separation means are performed in parallel.

In the separation apparatus according to the first aspect, for example, the sample may be a first sample having a fragile layer therein.
And the second plate-shaped member are bonded together.

In the separation device according to the first aspect, for example, the fragile layer is a porous layer.

In the separation device according to the first aspect, for example, the first plate member is a semiconductor substrate.

In the separation apparatus according to the first aspect, for example, the first plate-like member may be formed by forming a porous layer on one side of a semiconductor substrate and forming a non-porous layer on the porous layer. Do it.

In the separation device according to the first aspect, for example, the non-porous layer includes a single-crystal semiconductor layer.

[0027] A separation apparatus according to a second aspect of the present invention is a separation apparatus for separating a sample having a separation layer therein by the separation layer, comprising: a support for supporting the sample; An ejecting unit that ejects a fluid toward the separation layer of the sample supported by a support unit, and a vibration source that generates vibration energy to be supplied to the sample, and separates the sample by the fluid and the vibration energy It is characterized by doing.

In the separation device according to the second aspect of the present invention, for example, the sample is preferably a plate-like member having a layer having a fragile structure as the separation layer.

In the separation apparatus according to the second aspect of the present invention, for example, it is preferable that the support section supports the sample while rotating the sample about an axis orthogonal to the separation layer.

In the separation device according to the second aspect of the present invention, for example, a fluid is jetted to the jetting portion to mainly separate the first region of the separation layer by the fluid, and the vibration source is It is preferable to further include a control unit for generating vibration energy and separating mainly the second region of the separation layer by the vibration energy.

In the separation device according to the second aspect of the present invention, for example, the control section first separates the first region mainly by a fluid, and then mainly separates the second region by vibration energy. Preferably, the jetting unit and the vibration source are controlled so as to be separated.

In the separation device according to the second aspect of the present invention, for example, the control unit first separates the second region mainly by vibration energy, and then mainly separates the first region by a fluid. Preferably, the jetting unit and the vibration source are controlled so as to be separated.

In the separation apparatus according to the second aspect of the present invention, for example, the control section executes at least a part of the separation processing of the sample by a fluid and the separation processing of the sample by vibration energy in parallel. Thus, it is preferable to control the ejection unit and the vibration source.

In the separation device according to the second aspect of the present invention, for example, the first region is a region on the peripheral side of the separation layer, and the second region is a region of the separation layer. It is preferably a central area.

In the separation device according to the second aspect of the present invention, for example, the support portion may include a pair of opposing support surfaces for pressing and supporting the vicinity of the central portion of the sample so as to sandwich the sample from both sides. And the support surface is preferably substantially circular.

In the separation device according to the second aspect of the present invention, for example, the first region is a region substantially on the outer peripheral side than a region pressed by the support surface, and the second region is Preferably, it is a region substantially inside a region pressed by the support surface.

In the separation device according to the second aspect of the present invention, for example, it is preferable that the vibration source is provided on the support.

[0038] In the separation apparatus according to the second aspect of the present invention, for example, it is preferable that the vibration source is provided at a portion of the tip of the support that comes into contact with the sample.

The separation apparatus according to the second aspect of the present invention further includes, for example, a processing tank for processing the sample, and when the sample is separated by a fluid, the sample is supported by the support. When a fluid is jetted toward the separation layer of the sample in a state where the sample is separated, and the sample is separated by vibration energy, the sample is immersed in the processing tank and the vibration energy generated by the vibration source is subjected to the processing. It is preferable to supply the sample via the liquid in the tank.

[0040] In the separation apparatus according to the second aspect of the present invention, for example, the processing tank includes a separating member that separates the separated samples from each other when the samples are completely separated by vibration energy. It is preferred to have.

[0041] The separation apparatus according to the second aspect of the present invention preferably further comprises, for example, a drying furnace for drying the sample processed by the processing tank.

The separation apparatus according to the second aspect of the present invention preferably further comprises, for example, a classification mechanism for classifying the separated samples.

In the separation apparatus according to the second aspect of the present invention, it is preferable that the separation apparatus further includes, for example, a transfer mechanism that receives the sample from the support and transfers the sample to the processing tank.

In the separation device according to the second aspect of the present invention, for example, a plurality of samples are sequentially received from the support portion, and the plurality of samples are sequentially stored in one cassette.
Then, it is preferable to further include a transport mechanism for immersing the cassette in the processing tank.

[0045] The separation apparatus according to the second aspect of the present invention preferably further comprises, for example, a transport mechanism for transporting the sample between the support, the processing tank, and the drying furnace.

In the separation apparatus according to the second aspect of the present invention, for example, a plurality of samples are sequentially received from the support portion, and the plurality of samples are sequentially stored in one cassette.
Thereafter, it is preferable that the cassette is further provided with a transfer mechanism for immersing the cassette in the processing tank and receiving the cassette from the processing tank and transferring the cassette to the drying furnace after the processing in the processing tank is completed.

In the separation apparatus according to the second aspect of the present invention, for example, after the separated sample is dried by the drying furnace, a classification mechanism for taking out the separated sample from the drying furnace and classifying the sample is provided. It is preferable to further provide.

In the separation apparatus according to the second aspect of the present invention, for example, the sample is obtained by laminating a first plate-like member having a fragile layer therein and a second plate-like member. .

In the separation device according to the second aspect of the present invention, for example, the fragile layer is a porous layer.

In the separation device according to the second aspect of the present invention, for example, the first plate-like member is a semiconductor substrate.

[0051] In the separation apparatus according to the second aspect of the present invention, for example, the first plate-shaped member is formed by forming a porous layer on one side of a semiconductor substrate, and forming a non-porous layer on the porous layer. Is formed.

In the separation device according to the second aspect of the present invention, for example, the non-porous layer includes a single-crystal semiconductor layer.

A separation method according to a third aspect of the present invention is a separation method for separating a sample having a separation layer therein by the separation layer, wherein a fluid is directed toward the separation layer. A first separation step of mainly separating the first region of the separation layer by spraying, and a second separation step of mainly separating the second region of the separation layer by vibration energy, The sample is separated at the separation layer by the first and second separation steps.

In the separation method according to the third aspect, for example, the sample is preferably a plate-like member having a layer having a fragile structure as the separation layer.

In the separation device according to the second aspect of the present invention, for example, the first region is a region on the peripheral side of the separation layer, and the second region is a region of the separation layer. It is preferably a central area.

[0056] In the separation method according to the third aspect, for example, in the first separation step, the sample is rotated toward the separation layer while rotating the sample about an axis orthogonal to the separation layer. By injecting a fluid, the first
Preferably, the regions are separated.

In the separation method according to the third aspect, for example, the sample is supported by the same support in the first and second separation steps, and in the second step, the support is connected to the sample by the support. It is preferable to supply vibration energy to the sample from the contacting part.

In the separation method according to the third aspect, for example, the support section has a pair of opposing support surfaces for pressing and supporting the vicinity of the center of the sample so as to sandwich the sample from both sides, Preferably, the support surface is substantially circular.

In the above-described separation method according to the third aspect, for example, the first region is a region substantially on the outer peripheral side than a region pressed by the support surface, and
Preferably, the region is a region substantially inside the region pressed by the support surface.

[0060] In the separation method according to the third aspect, for example, in the second separation step, the sample processed in the first separation step is immersed in a processing tank, and the sample is placed in the processing tank. It is preferable to supply vibration energy via the liquid.

In the separation method according to the third aspect, for example, it is preferable that the first step is performed first, and then the second step is performed.

In the above-described separation method according to the third aspect, for example, it is preferable that, first, the second step is executed, and then the first step is executed.

In the separation method according to the third aspect, it is preferable that, for example, at least a part of the first separation step and the second separation step are performed in parallel.

A separation method according to a fourth aspect of the present invention is a separation method in which a sample having a separation layer therein is separated by the separation layer, wherein the sample is directed toward the separation layer. And separating the sample while supplying vibrational energy to the sample while supplying a fluid.

In the separation method according to the fourth aspect, for example, it is preferable to separate the sample while rotating the sample about an axis perpendicular to the separation layer.

A separation method according to a fifth aspect of the present invention is a separation method in which a sample having a separation layer therein is separated by the separation layer, wherein the sample is directed toward the separation layer. And separating the sample while supplying vibrational energy near the center of the sample.

In the separation method according to the fifth aspect, for example, it is preferable to separate the sample while rotating the sample about an axis perpendicular to the separation layer.

A separation method according to a sixth aspect of the present invention is a separation method in which a sample having a separation layer therein is separated by the separation layer, wherein the sample is directed toward the separation layer. And separating the sample while supplying vibrational energy to the sample and the fluid injected into the sample.

In the separation method according to the sixth aspect, for example, it is preferable to separate the sample while rotating the sample about an axis orthogonal to the separation layer.

A separation method according to a seventh aspect of the present invention is a separation method in which a sample having a separation layer therein is separated by the separation layer. The method is characterized in that a fluid is jetted toward the separation layer and the sample is separated while supplying vibration energy to the predetermined portion of the sample.

In the separation method according to the seventh aspect, for example, it is preferable to separate the sample while rotating the sample about an axis perpendicular to the separation layer.

In the separation method according to the third to seventh aspects, for example, the sample is obtained by laminating a first plate-like member having a fragile layer inside and a second plate-like member. Become.

In the separation methods according to the third to seventh aspects, for example, the fragile layer is a porous layer.

In the separation method according to the third to seventh aspects, for example, the first plate-like member is a semiconductor substrate.

In the separation method according to the third to seventh aspects, for example, the first plate-like member may be formed by forming a porous layer on one side of a semiconductor substrate and forming a non-porous layer on the porous layer. A layer is formed.

In the separation method according to the third to seventh aspects, for example, the non-porous layer includes a single crystal semiconductor layer.

[0077]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a view for explaining a method of manufacturing an SOI substrate according to a preferred embodiment of the present invention in the order of steps.

In the step shown in FIG. 1A, a single crystal Si substrate 11 is prepared, and a porous Si layer 12 is formed on the surface thereof by anodization or the like. Next, in a step shown in FIG. 1B, a non-porous single-crystal Si layer 13 is formed on the porous Si layer 12.
Is formed by an epitaxial growth method, and an insulating layer (for example, an SiO ₂ layer) 15 is formed thereon. This allows
A first substrate () is formed.

In the step shown in FIG. 1C, the second substrate 1
4 () is prepared, and the first layer is placed so that the insulating layer 15 faces.
The substrate () and the second substrate () are brought into close contact with each other at room temperature. After that, the first substrate () and the second substrate 14 () are bonded to each other by anodic bonding, pressing, heat treatment, or a combination thereof. By this processing, the insulating layer 15 and the second substrate 14 () are firmly bonded.
The insulating layer 15 is made of non-porous single-crystal Si as described above.
Although it may be formed on the layer 13, the second substrate 14 ()
1 and may be formed on both. As a result, when the first substrate and the second substrate are brought into close contact with each other, FIG.
The state shown in FIG.

In the step shown in FIG. 1D, the two bonded substrates are separated at the porous Si layer 12. Thereby, the second substrate side ("+") has a laminated structure of the porous Si layer 12 "/ the single-crystal Si layer 13 / the insulating layer 15 / the single-crystal Si substrate 14. On the other hand, on the first substrate side (')
Has a structure having a porous Si layer 12 ′ on a single-crystal Si substrate 11.

The substrate (') after separation is formed by removing the remaining porous Si layer 12' and, if necessary, flattening the surface to form the first substrate () again. Used as a single crystal Si substrate 11.

After separating the bonded substrates, FIG.
In the step shown in (e), the porous layer 12 '' on the surface of the second substrate side ("+") is selectively removed. This allows
A substrate having a stacked structure of single crystal Si layer 13 / insulating layer 15 / single crystal Si substrate 14, that is, a substrate having an SOI structure is obtained.

In this embodiment, in the step shown in FIG. 1D, that is, at least a part of the step of separating the bonded substrate, the porous Si as a separating layer is used.
A separation apparatus is used in which a liquid or a gas (fluid) is jetted toward the layer to separate the bonded substrates into two at the separation layer.

[Basic Configuration of Separation Apparatus]
The water jet method was applied. In general,
In the water jet method, water (abrasive material is added when cutting hard material) is jetted at high speed and high pressure in a bundle to the object, and ceramics, metal, concrete, resin, rubber, This is a method of cutting and processing wood and the like, removing a coating film on the surface, cleaning the surface, and the like (see Water Jet Vol. 1, No. 1, page 4). Conventionally, the water jet method has been used for cutting, processing, removing a coating film, and cleaning the surface as described above by mainly removing a part of the material.

In this separation apparatus, a fluid is ejected in a bundled flow toward a porous layer (separation layer) of a bonded substrate, which is a fragile structure, and the porous layer is selectively collapsed. By doing so, the substrate is separated at the portion of the porous layer. Hereinafter, this bundled flow is referred to as a “jet”. Further, the fluid constituting the jet is referred to as “jet constituting medium”. Water, organic solvent such as alcohol, hydrofluoric acid, nitric acid and other acids, potassium hydroxide and other alkalis, air, nitrogen gas, carbon dioxide gas, rare gas, etching gas and other gases, plasma, etc. I can do it.

When this separation apparatus is applied to a manufacturing process of a semiconductor device, for example, a separation process of a bonded substrate, it is preferable to use pure water from which impurity metals, particles and the like have been removed as much as possible.

This separation device removes the porous layer from the outer peripheral portion toward the central portion by jetting a jet toward the porous layer exposed on the side surface of the bonded substrate. Accordingly, the bonded substrate is separated into two substrates without removing the porous layer having a weak mechanical strength without damaging the main body.

FIG. 2 is a diagram showing a schematic configuration of a basic separation apparatus to which the water jet method is applied. The separation apparatus 100 includes a substrate holding unit 120 having a vacuum suction mechanism,
The bonded substrate 101 is held by the substrate holding portions 120 and 150 so as to sandwich the bonded substrate 101 from both sides. The bonded substrate 101 has a porous layer 101b, which is a fragile component, inside, and the two substrates 101 are separated by the separation device 100 at the porous layer 101b.
a, 101c. In the separation apparatus 100, for example, the substrate 101a is set so as to be on the first substrate side (') in FIG. 1 and the substrate 101c is set on the second substrate side ("+") in FIG.

The substrate holders 120 and 150 exist on the same rotation axis. The substrate holding unit 120 includes the bearing 10
The rotation shaft 104 is connected to one end of a rotation shaft 104 rotatably supported by a support table 109 via the shaft 8, and the other end of the rotation shaft 104 is connected to a rotation shaft of a motor 110. Therefore, the rotation force generated by the motor 110 causes the substrate holding unit 120 to rotate.
Then, the bonded substrate 101 vacuum-adsorbed to the substrate rotates. The motor 110 is controlled by the controller 190, and rotates the rotation shaft 104 at a rotation speed specified by the controller 190, or stops the rotation.

The substrate holding section 150 is connected to one end of a rotating shaft 103 which is slidably and rotatably supported on a support table 109 via a bearing 111. The other end of the rotating shaft 103 is connected to the support table 109. Air cylinder 112 fixed to
It is connected to. The air cylinder 112 is driven by a cylinder driving unit 191 controlled by the controller 190. This air cylinder 112 is
By extruding 3, the bonded substrate 101 is pressed by the substrate holding unit 150. The sealing member 1 is mounted on the support table 109 so as to
13 is fixed. The seal member 113 is made of, for example, rubber or the like.
It prevents entry into the 11 side.

The substrate supporting portions 120 and 150 are provided with one or a plurality of suction holes 181 and 182, respectively, as a vacuum suction mechanism, and the suction holes 181 and 182 rotate through the rotation shafts 104 and 103, respectively. The seal portion 104a,
103a. Rotary seal parts 104a, 103
Vacuum lines 104b and 103b are connected to a, respectively. These vacuum lines 104b and 103b have
An electromagnetic valve for controlling the attachment / detachment of the bonded substrate 101 or the substrate after separation is attached. This solenoid valve
It is controlled by the controller 190.

First, the separation process using the basic separation apparatus 100 to which the water jet method is applied and the problems of the process will be described, and then, as a preferred embodiment of the present invention, an improved embodiment will be described. The separation device and the separation process will be described.

[Separation by Basic Separation Apparatus] First, the rotary shaft 103 is housed in the air cylinder 112 to provide a corresponding distance between the suction surfaces of the substrate holders 120 and 150. Next, the substrate holding unit 120
The bonded substrate 101 is transported between the substrate and the substrate holding unit 150 by a transport robot or the like, and the center of the bonded substrate 101 is aligned with the center axes of the rotating shafts 104 and 103. Next, the controller 190 operates the air cylinder 112.
Then, the bonded substrate 101 is pressed and held by extruding the rotating shaft 103 (state shown in FIG. 2).

Next, the controller 190 controls the motor 1
10 is controlled to rotate the bonded substrate 101 at a predetermined rotation speed. Thereby, the rotating shaft 104, the substrate holding unit 120, the bonded substrate 101, the substrate holding unit 150, and the rotating shaft 103 rotate integrally.

Next, the controller 190 operates the pump 1
14 is controlled to feed a jet forming medium (for example, water) to the nozzle 102 and wait until the jet ejected from the nozzle 102 is stabilized. When the jet is stabilized, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 over the center of the bonded substrate 101,
The jet is inserted into the porous layer 101b of the bonded substrate 101.

When the jet is sandwiched, a separation force due to the pressure of the jet constituting medium continuously injected into the porous layer 101b, which is a fragile structure, acts on the bonded substrate 101. The porous layer 101b connecting 101a and 101c is destroyed. By this processing, the bonded substrate 101 can be completely separated in, for example, about several minutes.

When the bonded substrate 101 is separated into two substrates, the controller 190
Is controlled to move the nozzle 102 to the standby position, and then the operation of the pump 114 is stopped. Further, the controller 190 controls the motor 110 to stop the rotation of the bonded substrate 101, and controls the above-described solenoid valve to apply the separated substrates 101a and 101c to the substrate holding units 120 and 150, respectively. Adsorb.

Next, the controller 190 causes the air cylinder 112 to house the rotating shaft 103. Thereby, the two physically separated substrates are separated from each other by breaking the surface tension of the jet constituting medium (for example, water).

According to the above separation process, the bonded substrate 101 can be efficiently separated, and the substrate is less damaged and contaminated. Therefore, this separation process is considered very promising for separating bonded substrates or other similar samples. However, problems to be solved remain as described below.

[Problem in Separation Processing by Basic Separation Apparatus] FIG. 3 shows the above separation processing, that is, while pressing and holding the center portion of the bonded substrate from both sides and rotating it, jetting the substrate with a jet. It is a figure which shows typically the defect 101d and 101e which may arise by the process isolate | separated into one board | substrate. Such defects 101d and 101
c occurs in a portion of the bonded substrate 101 which is separated at the final stage of the separation processing.

When the defects 101d and 101c are large, the layer adjacent to the porous layer (101b; 12 in FIG. 1) (for example, the single crystal Si layer 13 shown in FIG. 1) is damaged. The separated substrate cannot be used in the next step (for example, the step shown in FIG. 1E).

The causes of such defects 101d and 101e are considered to be roughly as follows.

In the separation process of the bonded substrate, first, the pressing force of the substrate holding unit 150 (air cylinder 112) is applied to the bonded substrate 101.
1 and, secondly, the bonded substrate 101
For expanding the bonded substrate 101 by the jet constituting medium injected into the gap generated by the separation of the substrate (separation force)
Thirdly, the bonding force of the porous layer 101 in the unseparated region of the bonded substrate 101 (drag against the separation force) acts. Here, the pressing force of the air cylinder 112 is maintained substantially constant. On the other hand, it is considered that the separating force increases rapidly with the expansion of the separated region of the bonded substrate. In addition, the coupling force naturally decreases as the unseparated area is reduced.

In the above separation process, the substrate holding unit 1
The separation process is executed while holding the central portion of the bonded substrate by 20 and 150. Therefore, the outer peripheral region of the bonded substrate 101 is largely warped by the pressure of the jet forming medium at the time of separation, but the bonded substrate 10
In the central region of No. 1, the amount of warpage is small. Here, when the amount of warpage is large, that is, when the outer peripheral portion of the bonded substrate 101 is separated, it is considered that separation force mainly acts on a part of the periphery of the unseparated region and separation gradually progresses. Can be
On the other hand, when the amount of warpage is small,
Central part of 1 (area held by substrate holding unit)
When the substrate holding unit 150 is retracted, a separation force acts on the entire central portion of the bonded substrate 101, and the separation proceeds as the unseparated regions are peeled off at once. Conceivable.

From the above inference, at the stage where the outer peripheral portion of the bonded substrate is separated, (coupling force) + (pressing force)>
The relationship of (separation force) is maintained, and an excessive separation force does not act on the bonded substrate, and the separation force mainly acts on a part around the unseparated region. Conceivable. Therefore, the unseparated area has a weak separation force,
It is thought that they are gradually separated by the impact of the jet.

However, as the separation proceeds, the (coupling force) +
When the relationship of (pressing force) <(separation force) is established, the substrate holding unit 150 starts to retreat, so that the separation force acts more efficiently on the bonded substrate, and the progress of separation is accelerated. In the final stage of the separation process, that is, in the stage of separating the central portion of the bonded substrate 101, (coupling force) + (pressing force) <
<(Separation force), and the substrate holding unit 150 retreats at a stretch, and it is considered that an excessive separation force acts on the entire unseparated region. At this time, the final separation of the bonded substrate 101 is not mainly the impact of the jet, but mainly the separating force, that is, the jet constituent medium injected into the gap generated by the separation of the bonded substrate expands the bonded substrate. It is considered that this occurs when the entire unseparated region is peeled off at once by the force.

In summary, in the final stage of the separation process, the above-described defect mainly causes the region (the center in the above example) held by the substrate holding portion to be separated by the separating force (pressure of the medium constituting the jet). It is thought to be caused by separation.

In the following, an improved separation device and a separation process for solving the above problem in the basic separation device 100 will be described.

[Improved Separation Apparatus and Separation Processing] As a result of experiments, the present inventor has found that the occurrence of the above defects can be reduced by the following method.

That is, the first region of the porous layer 101b is mainly separated by the jet, and the second region of the porous layer 101b is mainly separated by the action of the vibration energy. The substrate 101 is completely separated. The first region is preferably, for example, a region (peripheral region) on the outer peripheral side of a region where the substrate holding units 120 and 150 press the bonded substrate 101. Further, the second region substantially corresponds to the substrate holding portion 120.
And 150 press the bonded substrate 101, that is, a region including the region in which the porous layer 101b may be peeled off at one time by the separation processing by the above-described basic separation device 100. Is preferred.

As described above, regarding the first region, the separation processing can be made more efficient by separating the bonded substrate 101 mainly by jetting. In the second region, the occurrence of the above-described defect can be reduced by separating the bonded substrate 101 mainly by vibration energy. That is, since the second region can be gradually separated by separating the second region mainly by the vibration energy, the occurrence of the above-described defect can be prevented. On the other hand, when the bonded substrates are completely separated only by the jet as in the separation processing by the basic separation apparatus 100 described above, in the final stage, the separation force rapidly increases, so that a small unseparated region is formed. The whole can be peeled off collectively, which can result in defects.

Here, the separation processing of the first area and the separation processing of the second area may be performed simultaneously, or the separation processing of the first area may be performed first, and then the separation processing of the second area may be performed. Alternatively, the separation processing of the second area may be performed, and then the separation processing of the first area may be performed. Further, the separation processing of the first area and the separation processing of the second area may be executed by the same device, or they may be executed by separate devices.

Hereinafter, preferred embodiments of the improved separation apparatus and separation processing will be described.

(First Embodiment) FIG. 4 is a diagram schematically showing a configuration of an improved separation apparatus according to a first embodiment of the present invention. The same components as those of the separation device 100 shown in FIG. 2 are denoted by the same reference numerals, and description thereof will be omitted.

The separation device 300 according to this embodiment
The substrate holder 150 has an ultrasonic oscillator 203. The ultrasonic transducer 203 is driven by an output signal of the oscillator 201. The output signal of the oscillator 201 includes signal lines 203e and 203f having a brush at the tip, rings 203c and 203d for electrically connecting the brush, and a rotating shaft 1
The signal is supplied to the ultrasonic vibrator 203 via signal lines 203a and 203b passing through the inside of the internal circuit 03. The on / off of the oscillator 201 and the amplitude and frequency of the output signal thereof are controlled by the controller 190.

FIG. 6 is a flowchart schematically showing the procedure of the separation process according to the first embodiment by the separation apparatus 300. Note that the processing shown in this flowchart is controlled by the controller 190. The processing shown in this flowchart is executed after the bonded substrate 101 is set in the separation device 300.

In the separation processing according to the first embodiment, first,
A first region of the bonded substrate 101 is separated by a jet while rotating the bonded substrate 101, and then,
The second region of the bonded substrate 101 is separated by ultrasonic waves, whereby the bonded substrate 101 is completely separated. Here, the first region is generally formed by the substrate holder 120.
And 150 is a region on the outer peripheral side with respect to the region pressed. Further, the second area is an area that is generally pressed by the substrate holding units 120 and 150.

Steps S101 to S106 are separation processing of the first area. First, the controller 190 controls the motor 110 to rotate the bonded substrate 101 at a predetermined rotation speed (Step S101). The rotation speed may be constant or may be changed according to time, but the first rotation is relatively low (for example, 4 to 12 rpm).
m), and thereafter relatively high speed (for example, 25 to 35).
rpm).

Next, the controller 190 operates the pump 1
14 is controlled to a predetermined pressure (for example, 500 kgf /
A square cm) jet is ejected from the nozzle 102 (S102).

Next, the controller 190 controls the nozzle driving section 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (step S103). Thus, separation of the first region of the bonded substrate 101 is started.

Thereafter, after waiting for the first region to be separated (for example, after a predetermined time has elapsed), the controller 190 controls the nozzle driver 106 to move the nozzle 102 to the standby position (S104). Then, the jet 114 is stopped by controlling the pump 114 (S105). Next, the controller 190 controls the motor 110 to stop the rotation of the bonded substrate 101 (S106).

FIG. 5 is a diagram schematically showing the bonded substrate 101 after the first region has been separated by a jet.
In FIG. 4, reference numeral 211 denotes a boundary between a region that has already been separated (separation region) and a region that has not yet been separated (unseparated region) while the separation processing by the jet is in progress.
In this embodiment, since the first region is separated by the jet while rotating the bonded substrate 101, the boundary 211
Has a spiral trajectory. The hatched area 213 is the first area.
The area and the area 212 not shaded are the second areas.

Steps S107 and S108 are separation processing of the second area. First, the controller 190 controls the oscillator 201 to start driving the ultrasonic transducer 203 (S107). Thereby, the ultrasonic vibrator 203
Generates ultrasonic waves (vibration energy), and the ultrasonic waves start separation of the second region. Then, after waiting for the second region to be separated (for example, after a predetermined time has elapsed), the controller 190 controls the oscillator 203 to stop the operation of the ultrasonic transducer 203 (S108).
Thereby, the separation processing of the bonded substrate 101 is completed. Note that the bonded substrate 101 may be rotated when the second region is separated by ultrasonic waves.

According to this embodiment, the second region remaining after the separation of the first region is separated by ultrasonic waves, so that small unseparated regions are prevented from being peeled off at once, and the separation process is performed. The occurrence of defects can be reduced.

Further, according to this embodiment, the ultrasonic wave is applied in a state where the jet constituting medium exists inside the bonded substrate 101. Therefore, even when the second region is separated, it is considered that the jet constituent medium functions as a medium for breaking the porous layer 101b, and the separation process proceeds efficiently.

In this embodiment, the first region and the second region
Although the regions are separated by one separation device 300, the first region and the second region may be separated by separate separation devices.

FIG. 7 is a flowchart schematically showing the procedure of the separation process according to the second embodiment by the separation device 300. The processing shown in this flowchart is controlled by the controller 190. Further, the processing shown in this flowchart is such that the bonded substrate 101
Executed after being set to zero.

In the separation processing according to the second embodiment, first,
First, the second region of the bonded substrate 101 is separated by ultrasonic waves, and then the first region of the bonded substrate 101 is separated by a jet while rotating the bonded substrate 101, whereby the bonded substrate is separated. 101 is completely separated.

Steps S201 and S202 are separation processing of the second area. First, the controller 190 controls the oscillator 201 to start driving the ultrasonic transducer 203 (S201). Thereby, the ultrasonic vibrator 203
Generates an ultrasonic wave, and the ultrasonic wave starts separation of the second region. Then, after waiting for the second region to be separated (for example, after a predetermined time has elapsed), the controller 190 controls the oscillator 201 to control the ultrasonic vibrator 203.
Is stopped (S202).

Steps S203 to S208 are processing for separating the first area. First, the controller 190 controls the motor 110 to rotate the bonded substrate 101 at a predetermined rotation speed (S203). Note that the rotation of the bonded substrate 101 is performed before the separation of the second region is started or the second region is separated.
It can also start while separating the regions.

Next, the controller 190 operates the pump 1
14 is controlled to a predetermined pressure (for example, 500 kgf /
A square cm) jet is ejected from the nozzle 102 (S204).

Next, the controller 190 controls the nozzle driving section 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S205). Thus, separation of the first region of the bonded substrate 101 is started.

Thereafter, after waiting for the first area to be separated (for example, after a predetermined time has elapsed), the controller 190 controls the nozzle driver 106 to move the nozzle 102 to the standby position (S206). Then, the jet 114 is stopped by controlling the pump 114 (207). Then
The controller 190 controls the motor 110 to stop the rotation of the bonded substrate 101.

According to this embodiment, the second region (central portion) is first separated by the ultrasonic wave, and the peripheral portion (hereinafter, ring-shaped region) adjacent to the second region is originally fragile. The quality layer 101b becomes more fragile. In this embodiment, since the ring-shaped region is a region that is separated in the final stage of the separation processing of the first region, the ring-shaped region is made weak, so that the ring-shaped region can be easily cut by the jet. In addition, it is possible to prevent the ring-shaped region from being peeled off at once. Therefore, it is considered that defects that may occur during the separation process by the above-described basic separation device can be reduced.

In this embodiment, the first region and the second region
Although the regions are separated by one separation device 300, the first region and the second region may be separated by separate separation devices.

FIG. 8 is a flowchart schematically showing the procedure of the separation processing by the separation apparatus 300 according to the third embodiment. The processing shown in this flowchart is controlled by the controller 190. Further, the processing shown in this flowchart is such that the bonded substrate 101
Executed after being set to zero.

In the third embodiment, the separation process of the first region by the jet and the separation process of the second region by the ultrasonic wave are executed in parallel. Thus, the time required to completely separate the bonded substrates can be reduced, and the throughput can be improved.

First, the controller 190 controls the oscillator 20
1 to start driving the ultrasonic transducer 203 (S
301). Thus, the ultrasonic transducer 203 generates an ultrasonic wave, and the ultrasonic wave starts separation of the second region.

Next, the controller 190 controls the motor 1
10 is controlled to rotate the bonded substrate 101 at a predetermined rotation speed (S302). Next, the controller 19
0 controls the pump 114 to a predetermined pressure (for example,
A jet of 500 kgf / square cm) is ejected from the nozzle 102 (S303).

Next, the controller 190 controls the nozzle driving section 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S304). Thus, separation of the first region of the bonded substrate 101 is started.

Thereafter, after waiting for the first region to be separated (for example, after a predetermined time has elapsed), the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 to the standby position (S305). Then, the pump 114 is controlled to stop jetting (306). Then
The controller 190 controls the motor 110 to stop the rotation of the bonded substrate 101 (S307).

Thereafter, after waiting for the second region to be separated (for example, after a predetermined time has elapsed), the controller 190 controls the oscillator 201 to stop the operation of the ultrasonic transducer 203 (S308). .

According to this embodiment, the first
Since the separation process of the region and the separation process of the second region by ultrasonic waves are performed in parallel, the time required for completely separating the bonded substrate 101 can be reduced, and the throughput can be improved.

Further, according to this embodiment, since the jet constituting medium injected into the bonded substrate 101 also functions as a medium for transmitting ultrasonic waves, it is considered that the separation process proceeds efficiently.

The order of the above steps can be appropriately changed in consideration of, for example, the relationship between the time required for the separation processing of the first area and the time required for the separation processing of the second separation.

As described above, according to this embodiment,
By separating the second region mainly by ultrasonic waves, it is possible to prevent defects from occurring during the separation process.

(Second Embodiment) In this embodiment, the first separating device (first separating device) 100
The region is separated, and the second region is separated by a separation device having an ultrasonic bath (second separation device). The separation device 100
It is also possible to use the separation device 300 instead of.

FIG. 9 is a sectional view schematically showing the configuration of the second separation device. The second separation device 400 has an ultrasonic bath 401 and an ultrasonic source 403. When separating the second region, the ultrasonic bath 401 is filled with a liquid (eg, pure water) 402 as an ultrasonic transmission medium. Then, the cassette 410 containing one or a plurality of bonded substrates 101 from which the first region is separated is immersed in the ultrasonic bath 401. In this state, the ultrasonic bath 401 and the liquid 40
By transmitting ultrasonic waves (vibration energy) to the bonded substrate 101 via the second substrate 2, the second region of the bonded substrate 101 can be separated.

The cassette 410 includes a plurality of support plates 412 for supporting the plurality of bonded substrates 101 and a plurality of separation plates for separating the two bonded substrates 101 when the bonded substrates 101 are separated into two. And a plate 411. The separation plate 411 is provided at the bottom of the ultrasonic bath 401, and has a wedge-like shape in which an upper portion (a tip portion) is sharp and the width increases toward a lower portion. When setting the bonded substrate 101 in the cassette 411, the bonded substrate 10
The groove on the outer peripheral portion of the first substrate (that is, the portion where the two substrates are bonded when the bonded substrate 101 is formed) is
To the tip of

FIGS. 10 and 11 are enlarged views of a part of the cassette 410 shown in FIG. More specifically, FIG.
0 shows a state before the second region of the bonded substrate 101 is separated, and FIG. 11 shows a state after the second region of the bonded substrate 101 is separated.

When the second region of the bonded substrate 101 is separated by the ultrasonic waves supplied through the ultrasonic transmission medium 402, the bonded substrate 101 is completely separated.
Then, as shown in FIG. 11, the separated substrates descend by their own weight along the side wall of the separation plate 411 and are separated from each other.

FIGS. 12 and 13 show the bonded substrate 10.
FIG. 2 is a diagram schematically illustrating a configuration of a processing system that executes a series of steps of separating 1 into two by a porous layer 101b. FIG. 14 is a flowchart showing a control procedure of the processing system shown in FIGS. The processing shown in this flowchart is controlled by the controller 700.

This processing system includes a first separating apparatus 100 shown in FIG. 2, a second separating apparatus 400 shown in FIG. 9, a drying furnace (for example, an IPA vapor drying apparatus) 500, a controller 700, and a substrate. Robots 701 and 70 to transfer
3 and 704 and a robot 7 for transporting the cassette 410
02.

Prior to the processing by this processing system,
First, a cassette 601 containing one or a plurality of bonded substrates 101 (for example, the substrate shown in FIG. 1C) and cassettes 602 and 603 for containing separated substrates are set at predetermined positions.

In this state, first, under the control of the controller 700, the robot 701 takes out one bonded substrate 101 from the cassette 601, and
S401). Then, the controller 700
Under the control of the above, the separation device 100
Is separated by a jet (S402). Next, under the control of the controller 700, the robot 701 receives the bonded substrate 101 from the separation device 100, and engages the outer peripheral groove of the bonded substrate 101 with the tip of the separation plate 411 in the cassette 410. The bonded substrate 101 is placed in a cassette 410
(S403).

Next, the controller 700 determines whether or not the predetermined number of bonded substrates 101 have been processed by the separation device 100 and stored in the cassette 410 (S40).
4) If the processing is not completed, step S401
To S403 are repeated.

On the other hand, when the above processing is completed, the robot 702 is controlled under the control of the controller 700.
Then, the cassette 410 containing a predetermined number of bonded substrates 101 is immersed in the ultrasonic bath of the second separation device 400 (S405).

Next, under the control of the controller 700,
The second separation device 400 separates the second region (here, the center portion) of the bonded substrate 101 by ultrasonic waves (S4).
06). Thereby, each bonded substrate 101 is completely separated.

Next, under the control of the controller 700,
The robot 702 takes out the cassette 410 from the ultrasonic bath of the second separation device 400 and puts it into the drying furnace 500 (S407). Next, under the control of the controller 702, the drying furnace 500 dries each substrate housed in the cassette (S408).

Next, under the control of the controller 700,
The robot 702 takes out the cassette 410 from the drying furnace 500 and transports it to a predetermined position (S409). Then
Under the control of the controller 700, the robot 703 sucks the back surface of one of the separated substrates (for example, ′ in FIG.
The robot 704 sucks the back surface of the other separated substrate (for example, ("+" in FIG. 1)), takes it out of the cassette 410, and stores it in the cassette 603 (410).

One substrate (') of the two types of substrates thus classified is, for example, a single crystal for forming the first substrate () after the porous layer on the surface is removed. It is used as a Si substrate 11 (see FIG. 1). on the other hand,
The other substrate ("+") is used as an SOI substrate by selectively removing the porous layer on the surface (see FIG. 1).

According to this embodiment, by separating the second region by ultrasonic waves in the liquid, it is possible to prevent a defect from occurring at the time of separation. Further, according to this embodiment, since the separation processing of the second region is performed on a plurality of bonded substrates in a lump, the overall processing time can be reduced and the throughput can be improved.
Further, according to this embodiment, since the separation processing of the second region is performed in the ultrasonic bath, it is possible to remove dust generated during the separation processing of the first region from the substrate surface.

[0164]

According to the present invention, it is possible to provide an apparatus and a method suitable for preventing a defect from occurring when a sample such as a substrate having a separation layer therein is separated. it can.

[0165]

[Brief description of the drawings]

FIG. 1 is a view illustrating a method of manufacturing an SOI substrate according to a preferred embodiment of the present invention in the order of steps.

FIG. 2 is a diagram showing a schematic configuration of a basic separation device (first separation device) to which the water jet method is applied.

FIG. 3 is a diagram schematically illustrating defects that may be caused by a process of separating a bonded substrate using only a jet.

FIG. 4 is a diagram schematically showing a configuration of an improved separation device according to the first embodiment of the present invention.

FIG. 5 is a diagram schematically showing a bonded substrate after a first region (for example, a peripheral portion) is separated by a jet.

FIG. 6 is a flowchart schematically showing a procedure of a separation process according to the first embodiment by the separation device shown in FIG. 5;

FIG. 7 is a flowchart schematically showing a procedure of a separation process according to a second embodiment by the separation device shown in FIG. 5;

8 is a flowchart schematically showing a procedure of a separation process according to a third embodiment by the separation device shown in FIG. 5;

FIG. 9 is a cross-sectional view schematically showing a configuration of a second separation device applied to a second embodiment of the present invention.

FIG. 10 is an enlarged view of a part of the cassette shown in FIG. 9 (before separation of a second region).

FIG. 11 is an enlarged view of a part of the cassette shown in FIG. 9 (after separation of a second area).

FIG. 12 is a diagram schematically showing a configuration of a processing system for executing a series of steps for separating a bonded substrate into two substrates.

FIG. 13 is a diagram schematically showing a configuration of a processing system for executing a series of steps for separating a bonded substrate into two substrates.

FIG. 14 is a flowchart showing a control procedure of the processing system shown in FIGS. 12 and 13.

[Explanation of symbols]

 Reference Signs List 11 single-crystal Si substrate 12 porous Si layer 13 non-porous single-crystal Si layer 14 single-crystal Si substrate 15 insulating layer 100 separation device (first separation device) 101 bonded substrate 101b porous layer 101d, 101e defect 103, 104 Rotating shafts 108, 111 Bearing 109 Support 110 Motor 112 Air cylinder 113 Sealing member 120, 150 Substrate holding parts 181, 182 Suction holes 104a, 103a Rotating seal parts 104b, 103b Vacuum line 190 Controller 191 Cylinder driving unit 201 Oscillator 203 Ultrasonic wave Vibrator 203a, 203b, 203e, 203f Signal line 203c, 203d Ring 211 Boundary 212 Second region 213 First region 300 Separation device 400 Second separation device 401 Ultrasonic bath 402 Liquid (ultrasonic transmission medium) 410 cassette 411 spaced plate 412 supporting plate 500 drying oven 601-603 cassette 700 Controller 701-704 robot

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification FI theme coat ゛ (Reference) H01L 21/306 H01L 21/306 Z (72) Inventor Kazuaki Omi 3- 30-2 Shimomaruko, Ota-ku, Tokyo No. Within Canon Inc. (72) Inventor Takao Yonehara 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term within Canon Inc. (reference) 3C060 AA20 CA03 CE07 CE11 CE21 CE23 5F043 AA40 DD06 DD13 DD30 EE05 EE07 EE08 EE35 EE40

Claims (72)

[Claims] 1. A separation apparatus for separating a sample having a separation layer therein by the separation layer, wherein a fluid is jetted toward the separation layer to form a main part of the separation layer. First separating means for separating the first region, and second separating means for mainly separating the second region of the separation layer by vibrational energy, wherein the sample is separated by the first and second separating means. Is separated by the separation layer. 2. The separation apparatus according to claim 1, wherein the sample is a plate-shaped member having a layer having a fragile structure as the separation layer. 3. The device according to claim 1, wherein the first region is a region on the peripheral side of the separation layer, and the second region is a region on the center side of the separation layer. Or Claim 2
The separation device according to claim 1. 4. The first separating means mainly rotates the sample about an axis orthogonal to the separation layer while injecting a fluid toward the separation layer to rotate the sample.
4. The method according to claim 1, wherein the areas are separated.
The separation device according to any one of the above. 5. The apparatus according to claim 1, further comprising: a support unit configured to support the sample during the separation process performed by the first and second separation units.
The separation device according to any one of claims 1 to 4, wherein the second separation unit supplies vibration energy to the sample from a portion where the support unit comes into contact with the sample. . 6. The support means has a pair of opposing support surfaces for pressing and supporting the vicinity of a central portion of the sample from both sides, and the support surface is substantially circular. The separation device according to claim 5, wherein 7. The first region is a region substantially on the outer peripheral side than a region pressed by the support surface, and the second region is substantially larger than a region pressed by the support surface. The separation device according to claim 6, wherein the separation device is an inner region. 8. The second separation means has a processing tank for processing a sample, and a vibration source for generating vibration energy, and the sample processed by the first separation means is supplied to the processing tank. The vibration energy generated by the vibration source is supplied to the sample via the liquid in the processing tank in a state of being immersed in the sample, and the sample is supplied with the vibration energy. Separation equipment. 9. The separation apparatus according to claim 8, wherein the processing tank has a separating unit that separates the separated samples from each other when the samples are completely separated by vibration energy. . 10. The method according to claim 1, wherein said first separating means mainly separates said first area, and said second separating means mainly separates said second area.
The separation device according to claim 7. 11. The method according to claim 1, wherein the second area is first separated mainly by the second separation means, and then the first area is mainly separated by the first separation means.
The separation device according to claim 7. 12. The apparatus according to claim 1, wherein at least a part of the separation processing by the first separation unit and at least a part of the separation processing by the second separation unit are executed in parallel. The separation device according to any one of the preceding claims. 13. The sample according to claim 1, wherein the sample is obtained by laminating a first plate-like member having a fragile layer therein and a second plate-like member. The separation device according to claim 1. 14. The separation device according to claim 13, wherein the fragile layer is a porous layer. 15. The separation device according to claim 13, wherein the first plate member is a semiconductor substrate. 16. The semiconductor device according to claim 15, wherein the first plate-like member is formed by forming a porous layer on one surface of a semiconductor substrate and forming a non-porous layer on the porous layer. The separation device according to any one of the preceding claims. 17. The separation device according to claim 16, wherein the non-porous layer includes a single crystal semiconductor layer. 18. A separation apparatus for separating a sample having a separation layer therein by the separation layer, comprising: a support for supporting the sample; and the separation of the sample supported by the support. And a vibration source for generating vibration energy to be supplied to the sample, wherein the sample is separated by the fluid and vibration energy. 19. The separation apparatus according to claim 18, wherein the sample is a plate-like member having a layer having a fragile structure as the separation layer. 20. The separation apparatus according to claim 18, wherein the supporter supports the sample while rotating the sample about an axis perpendicular to the separation layer. 21. A fluid is jetted to the jetting portion to mainly separate the first region of the separation layer by the fluid, and vibration energy is generated in the vibration source, and the vibration energy is used to generate the separation energy. The separation device according to any one of claims 18 to 20, further comprising a control unit for separating mainly the second region of the layer. 22. The control unit controls the ejection unit and the vibration source such that first, the first region is mainly separated by a fluid, and then, the second region is mainly separated by vibration energy. The separation device according to claim 21, wherein the separation is performed. 23. The control unit controls the ejection unit and the vibration source so that first, the second region is mainly separated by vibration energy, and then, the first region is mainly separated by fluid. The separation device according to claim 21, wherein the separation is performed. 24. The control unit controls the ejection unit and the vibration source such that at least a part of the separation of the sample by a fluid and the separation of the sample by vibration energy are performed in parallel. 22. The separation device according to claim 21, wherein: 25. The device according to claim 21, wherein the first region is a region on the peripheral side of the separation layer, and the second region is a region on the center side of the separation layer. 25. The separation device according to claim 24. 26. The support portion has a pair of opposing support surfaces for pressing and supporting the vicinity of the center of the sample from both sides, and the support surface is substantially circular. The separation device according to any one of claims 21 to 24. 27. The first region is a region substantially on the outer periphery side than the region pressed by the support surface, and the second region is substantially larger than the region pressed by the support surface. 27. The separation device according to claim 26, wherein the separation device is an inner region. 28. The separation apparatus according to claim 18, wherein the vibration source is provided on the support. 29. The separation apparatus according to claim 18, wherein the vibration source is provided at a portion of the tip of the support portion that contacts the sample. 30. The apparatus further comprises a processing tank for processing the sample, wherein when the sample is separated by a fluid, the sample is supported by the support and the fluid is directed toward a separation layer of the sample. When the sample is separated by vibration energy, the sample is immersed in the processing tank, and the vibration energy generated by the vibration source is supplied to the sample via the liquid in the processing tank. The separation device according to any one of claims 18 to 20, characterized in that: 31. The separation apparatus according to claim 30, wherein the processing tank has a separation member that separates the separated samples from each other when the samples are completely separated by vibration energy. . 32. The apparatus according to claim 3, further comprising a drying furnace for drying the sample processed by the processing tank.
32. The separation device according to claim 31. 33. The apparatus according to claim 18, further comprising a classification mechanism for classifying the separated samples.
The separation device according to any one of the above. 34. The separation apparatus according to claim 30, further comprising a transport mechanism that receives the sample from the support unit and transports the sample to the processing tank. 35. A method according to claim 35, wherein a plurality of samples are sequentially received from the support, and the plurality of samples are sequentially stored in one cassette.
31. The separation device according to claim 30, further comprising a transport mechanism for immersing the cassette in the processing tank. 36. The separation apparatus according to claim 32, further comprising a transfer mechanism for transferring the sample between the support, the processing tank, and the drying furnace. 37. Receiving a plurality of samples sequentially from the support portion, sequentially accommodating the plurality of samples in one cassette,
33. The method according to claim 32, further comprising: immersing the cassette in the processing tank; and after completion of the processing in the processing tank, a transfer mechanism for receiving the cassette from the processing tank and transferring the cassette to the drying furnace. The separation device according to any one of the preceding claims. 38. The separation apparatus according to claim 37, further comprising a classification mechanism for taking out the separated sample from the drying furnace and classifying the separated sample after the separated sample is dried by the drying furnace. apparatus. 39. The sample according to claim 18, wherein the sample is formed by bonding a first plate-like member having a fragile layer therein and a second plate-like member. The separation device according to claim 1. 40. The separation device according to claim 39, wherein the fragile layer is a porous layer. 41. The separation device according to claim 39, wherein the first plate-like member is a semiconductor substrate. 42. The first plate-like member according to claim 41, wherein a porous layer is formed on one surface of a semiconductor substrate, and a non-porous layer is formed on the porous layer. The separation device according to any one of the preceding claims. 43. The separation apparatus according to claim 42, wherein said non-porous layer includes a single crystal semiconductor layer. 44. A separation method for separating a sample having a separation layer therein by the separation layer, wherein a fluid is jetted toward the separation layer to form a main layer of the separation layer. A first separation step of separating the first region, and a second separation step of separating mainly the second region of the separation layer by using vibration energy. The first and second separation steps A separation method, wherein a sample is separated by the separation layer. 45. The separation method according to claim 44, wherein the sample is a plate-like member having a layer having a fragile structure as the separation layer. 46. The device according to claim 44, wherein the first region is a region on the peripheral side of the separation layer, and the second region is a region on the center side of the separation layer. Or the separation method according to claim 45. 47. In the first separation step, the fluid is ejected toward the separation layer while rotating the sample around an axis orthogonal to the separation layer, thereby mainly forming the first region. The separation method according to any one of claims 44 to 46, wherein is separated. 48. The sample is supported by the same support in the first and second separation steps, and in the second step, vibration energy is applied to the sample from a portion where the support comes into contact with the sample. 48. The separation method according to any one of claims 44 to 47, wherein the method is supplied. 49. The support section has a pair of opposing support surfaces for pressing and supporting the vicinity of the central portion of the sample from both sides, and the support surface is substantially circular. 49. The separation method according to claim 48, wherein: 50. The first region is a region substantially on the outer peripheral side of a region pressed by the support surface, and the second region is substantially larger than a region pressed by the support surface. 50. The separation method according to claim 49, wherein the separation area is an inner area. 51. In the second separating step, the sample treated in the first separating step is immersed in a processing tank, and vibration energy is supplied to the sample via a liquid in the processing tank. The separation method according to any one of claims 44 to 47, wherein the separation method is characterized in that: 52. The method according to claim 4, wherein the first step is performed first, and then the second step is performed.
The separation method according to any one of claims 4 to 50. 53. The method according to claim 4, wherein the second step is performed first, and then the first step is performed.
The separation method according to any one of claims 4 to 50. 54. The separation method according to claim 44, wherein at least part of the first separation step and the second separation step are performed in parallel. 55. A separation method for separating a sample having a separation layer therein by the separation layer, wherein a fluid is jetted toward the separation layer of the sample and vibration energy is applied to the sample. Separating the sample while supplying the sample. 56. The separation method according to claim 55, wherein the sample is separated while rotating the sample about an axis orthogonal to the separation layer. 57. A separation method for separating a sample having a separation layer therein by the separation layer, wherein a fluid is ejected toward the separation layer of the sample and a central portion of the sample is separated. A separation method, comprising separating the sample while supplying vibration energy to the vicinity. 58. The separation method according to claim 57, wherein the sample is separated while rotating the sample about an axis orthogonal to the separation layer. 59. A separation method for separating a sample having a separation layer therein by the separation layer, wherein a fluid is jetted toward the separation layer of the sample, and the sample and the sample are separated. A separation method, wherein the sample is separated while supplying vibration energy to the fluid injected therein. 60. The separation method according to claim 59, wherein the sample is separated while rotating the sample about an axis orthogonal to the separation layer. 61. A separation method for separating a sample having a separation layer therein by the separation layer, wherein a fluid is jetted toward the separation layer while supporting a predetermined portion of the sample. And separating the sample while supplying vibration energy to the predetermined portion of the sample. 62. The separation method according to claim 61, wherein the sample is separated while rotating the sample about an axis perpendicular to the separation layer. 63. The sample according to claim 44, wherein the sample is obtained by bonding a first plate-like member having a fragile layer therein and a second plate-like member. Or the separation method according to item 1. 64. The method according to claim 63, wherein the fragile layer is a porous layer. 65. The separation method according to claim 63, wherein the first plate member is a semiconductor substrate. 66. The first plate-like member according to claim 65, wherein a porous layer is formed on one surface of a semiconductor substrate, and a non-porous layer is formed on the porous layer. The separation method as described. 67. The separation method according to claim 66, wherein said non-porous layer includes a single crystal semiconductor layer. 68. Any one of claims 1 to 43
A method for manufacturing a semiconductor substrate by applying the separation device according to the above to a part of the process. 69. Any one of claims 1 to 43
A semiconductor substrate manufactured by applying the separation device according to the above to a part of the process. 70. A method for manufacturing a semiconductor substrate by applying the separation method according to claim 44 to a part of the steps. A semiconductor substrate separated by the separation method according to any one of claims 44 to 66. A semiconductor substrate manufactured by applying the separation method according to any one of claims 44 to 66 to a part of the steps.