JP2009111406A - System for treating sample - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a treating system preferable for manufacturing an SOI substrate. <P>SOLUTION: The treating system 3000 includes a scalar robot 3150 that holds and carries a lamination substrate with a robot hand 3152, a centering device 3070, a separating device 3020, an inverting device 3130, and a washing/drying device 3120 that are each disposed at almost equal positions from a drive shaft 3151 of the scalar robot 3150, and rotates the robot hand 3152 with the drive shaft 3152 as a center in a horizontal plane, and carries the lamination substrate and the substrate after separation between each treating device by allowing the robot hand 3152 to run away from or approach the drive shaft 3151. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a sample processing system, and more particularly, to a processing system including a plurality of processing apparatuses and processing a sample by the plurality of processing apparatuses.

As a substrate having a single crystal Si layer on an insulating layer, a substrate (SOI substrate) having an SOI (silicon on insulator) structure is known. A device employing this SOI substrate has many advantages that cannot be achieved with a normal Si substrate. As this advantage, the following are mentioned, for example.
(1) Dielectric separation is easy and suitable for high integration.
(2) Excellent radiation resistance.
(3) The stray capacitance is small, and the operation speed of the element can be increased.
(4) No well process is required.
(5) Latch-up can be prevented.
(6) A completely depleted field effect transistor can be formed by thinning.

  Since the SOI structure has various advantages as described above, research on its formation method has been advanced for several decades.

  As the SOI technology, an SOS (silicon on sapphire) technology for forming Si on a single crystal sapphire substrate by heteroepitaxial growth using a CVD (chemical vapor deposition) method has been known. This SOS technology has been highly evaluated as the most mature SOI technology. However, reasons such as generation of a large amount of crystal defects due to lattice mismatch at the interface between the Si layer and the underlying sapphire substrate, contamination of aluminum constituting the sapphire substrate into the Si layer, substrate price, delay to increase in area, etc. As a result, practical use has not progressed.

  Following SOIS technology, various SOI technologies appeared. With respect to this SOI technology, various methods have been tried with the aim of reducing crystal defects and manufacturing costs. As this method, a buried oxide layer is formed by implanting oxygen ions into a substrate, two wafers are bonded together with an oxide film sandwiched, and one wafer is polished or etched to form a thin single crystal Si layer. The method of leaving on an oxide film can be mentioned. Furthermore, after implanting hydrogen ions to a predetermined depth from the surface of the Si substrate on which the oxide film is formed and bonding the other substrate, a thin single crystal Si layer is left on the oxide film by heat treatment or the like. Also, a method of peeling the bonded substrate (the other substrate) can be mentioned.

  The present applicant has disclosed a new SOI technology in Japanese Patent Laid-Open No. 5-21338. In this technique, a first substrate in which a non-porous single crystal layer (including a single crystal Si layer) is formed on a single crystal semiconductor substrate on which a porous layer is formed is used as a second substrate through an insulating layer. After bonding, both the substrates are separated by the porous layer, and the non-porous single crystal layer is transferred to the second substrate.

This technology
Excellent thickness uniformity of the SOI layer,
The ability to reduce the crystal defect density of the SOI layer;
The surface flatness of the SOI layer is good,
An expensive special specification manufacturing apparatus is unnecessary, and an SOI substrate having an SOI film in the range of several hundreds of μm to 10 μm can be manufactured with the same manufacturing apparatus.
Etc. are superior.

  In Japanese Patent Application Laid-Open No. 7-302889, the present applicant separated the first substrate from the second substrate without destroying the first substrate and the second substrate, and then separated the first substrate. A technique has been disclosed in which the surface of one substrate is smoothed to form a porous layer again and reuse it. This technique has the excellent advantage that the first substrate can be used without waste, so that the manufacturing cost can be greatly reduced and the manufacturing process is simple.

  According to the SOI substrate manufacturing method according to the above-mentioned proposal by the present applicant, it is possible to manufacture a high-quality SOI substrate. However, in order to mass-produce SOI substrates, for example, it is necessary to speed up a series of processes.

  The present invention has been made in view of the above background, and an object thereof is to provide a processing system suitable for manufacturing, for example, an SOI substrate.

  The processing system according to the present invention includes a plurality of processing apparatuses that process a sample and a transport mechanism that transports the sample between the plurality of processing apparatuses, and the plurality of processing apparatuses hold the sample horizontally. And a reversing device for reversing an upper plate-shaped sample out of two plate-shaped samples obtained by separation by the separating device.

  A processing system according to a preferred embodiment includes a holding unit that holds a sample, and is arranged at a position that is substantially equidistant from a transport mechanism that holds and transports the sample by the holding unit, and a drive shaft of the transport mechanism. A plurality of processing devices, and the transport mechanism rotates the holding portion substantially in a horizontal plane around the drive shaft and moves the holding portion away from or close to the drive shaft. A sample is conveyed between the plurality of processing apparatuses.

  In the above processing system, for example, it is preferable that the sample to be processed is a plate-like sample, and the holding unit holds and conveys the plate-like sample substantially horizontally.

  In the above processing system, for example, it is preferable that each of the plurality of processing apparatuses deliver the sample in a substantially horizontal state with the holding unit of the transport mechanism.

  In the above processing system, it is preferable that the plurality of processing devices include, for example, a separation device for separating a sample.

  In the above processing system, for example, a plate sample to be processed has a separation layer inside, and the plurality of processing apparatuses include a separation device that separates the plate sample by the separation layer. It is preferable that

  In the above processing system, it is preferable that the separation device separates, for example, a plate-like sample held horizontally.

  In the above processing system, the separation device, for example, ejects a bundle of fluid toward the separation layer in a state where the plate-like sample is held horizontally, thereby separating the plate-like sample for the separation. It is preferred to separate the layers.

  In the above processing system, the separation device, for example, ejects a bundle-like fluid toward the separation layer while rotating the plate-like sample in a horizontal state, thereby causing the plate-like sample to flow. It is preferable to separate with a separation layer.

  In the above processing system, it is preferable that the separation device separates the plate sample while holding the plate sample from above and below, for example.

  In the above processing system, it is preferable that the separation device has, for example, a Bernoulli chuck as a holding mechanism for holding a plate-like sample.

  In the processing system, the separation device separates the plate sample by, for example, applying pressure with a substantially stationary fluid to at least a part of the separation layer of the plate sample. It is preferable to separate with an additional layer.

  In the above processing system, the separation device includes, for example, a sealed container, and a plate-like sample is accommodated in the sealed container so that the inside of the sealed container has a high pressure, whereby the plate-like sample is placed in the separation layer. It is preferable to separate by.

  In the above processing system, it is preferable that the plurality of processing devices include, for example, a centering device that performs centering of the plate sample before delivering the plate sample to the separation device.

  In the above processing system, it is preferable that the plurality of processing devices include, for example, a cleaning device that cleans each part of the plate-like sample obtained by separation by the separation device.

  In the above processing system, it is preferable that the cleaning device cleans a plate-like sample obtained by separation by the separation device in a horizontal state, for example.

  In the above processing system, it is preferable that the plurality of processing devices include, for example, a cleaning / drying device for cleaning and drying a plate-like sample obtained by separation by the separation device.

  In the above processing system, it is preferable that the cleaning / drying apparatus, for example, cleans and dries a plate-like sample obtained by separation by the separation apparatus in a horizontal state.

  In the above processing system, the plurality of processing devices include, for example, a reversing device that rotates the upper plate-shaped sample 180 degrees between two plate-shaped samples obtained by separation by the separation device. It is preferable.

  In the above processing system, for example, it is preferable to execute the processing by each of the plurality of processing devices in parallel.

  In the above processing system, the transport mechanism is preferably a scalar robot, for example.

  In the above processing system, it is preferable that the separation layer is, for example, a layer having a fragile structure.

  In the above processing system, the fragile structure layer is preferably a porous layer, for example.

  In the above processing system, the fragile layer is preferably a microbubble layer, for example.

  In the above processing system, the plate sample to be processed is preferably a semiconductor substrate.

  In the above processing system, it is preferable that the plate-like sample to be processed has a fragile structure layer as a separation layer by bonding the first substrate and the second substrate together.

  In the above processing system, the plate-like sample to be processed is formed by forming a non-porous layer on the surface of the first semiconductor substrate, and then bonding the second substrate to the non-porous layer. It is preferable that

  According to the present invention, for example, since a sample to be processed can be efficiently transported between a plurality of processing apparatuses, a series of processing can be speeded up.

  Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

  FIG. 1 is a diagram for explaining a method of manufacturing an SOI substrate according to a preferred embodiment of the present invention in the order of steps.

  In the step shown in FIG. 1A, a single crystal Si substrate 11 is prepared, and a porous Si layer 12 is formed on the surface thereof by anodization or the like. 1B, a non-porous single crystal Si layer 13 is formed on the porous Si layer 12 by an epitaxial growth method, and an insulating layer (for example, SiO 2 layer) 15 is formed thereon. Thereby, the first substrate 10 is formed.

  In the step shown in FIG. 1C, a second substrate 20 is prepared, and the first substrate 10 and the second substrate 20 are brought into close contact with each other so that the insulating layer 15 faces. Then, the 1st board | substrate 10 and the 2nd board | substrate 20 are bonded together by the process which combined anodic bonding, pressurization or heat processing, or these. By this treatment, the insulating layer 15 and the second substrate 20 are firmly bonded. The insulating layer 15 may be formed on the non-porous single crystal Si layer 13 as described above, but may be formed on the second substrate 20 or may be formed on both. As a result, when the first substrate and the second substrate are brought into close contact with each other, the state shown in FIG.

  In the step shown in FIG. 1D, the two bonded substrates are separated at the porous Si layer 12 portion. As a result, the second substrate side (10 ″ +20) has a laminated structure of porous Si layer 12 ″ / single crystal Si layer 13 / insulating layer 15 / single crystal Si substrate 20. On the other hand, the first substrate side (10 ′) has a structure having a porous Si layer 12 ′ on a single crystal Si substrate 11.

  The substrate (10 ′) after separation is removed by removing the remaining porous Si layer 12 ′, and planarizing the surface as necessary, thereby forming a first substrate (10) again. Used as a crystalline Si substrate 11.

  After separating the bonded substrates, the porous layer 12 ″ on the surface of the second substrate side (10 ″ +20) is selectively removed in the step shown in FIG. Thereby, a laminated structure of single crystal Si layer 13 / insulating layer 15 / single crystal Si substrate 20, that is, a substrate having an SOI structure is obtained.

  As the second substrate, for example, an insulating substrate (for example, a quartz substrate), a light-transmitting substrate (for example, a quartz substrate), and the like are preferable in addition to a single crystal Si substrate.

  In the above manufacturing process, the porous layer 12 having a fragile structure is formed in the separation region in order to facilitate the process of separating the two substrates after bonding them together (FIG. 1 (d)). However, instead of this porous layer, for example, a microbubble layer may be formed. The microbubble layer can be formed, for example, by implanting ions into a semiconductor substrate.

  Hereinafter, a processing system suitable for the bonded substrate separation process (FIG. 1D) in the manufacturing process of the SOI substrate and the like will be described.

  FIG. 2 is a plan view showing a schematic configuration of a processing system according to a preferred embodiment of the present invention. The processing system 3000 includes a scalar robot 3150 at a predetermined position (for example, the center) on the support base 3200 as a bonded substrate transport mechanism. Further, the processing system 3000 includes various processing apparatuses for handling or processing the bonded substrate at a position substantially equidistant from the drive shaft 3151 of the scalar robot 3150. Specifically, a loader 3080, a centering device 3070, a separation device 3020, a reversing device 3130, a cleaning / drying device 3120, a third unloader 3110, a second unloader 3100, and a first one are placed at substantially equal distances from the drive shaft 3151. An unloader 3090 is included.

  Prior to processing, the loader 3080 is loaded with a first cassette 3081 containing one or a plurality of bonded substrates. Prior to processing, an empty second cassette 3091 is placed on the first unloader 3090, an empty third cassette 3101 is placed on the second unloader 3100, and an empty second cassette 3091 is placed on the third unloader 3110. Four cassettes 3111 are placed.

  The scalar robot 3150 has a robot hand 3152 that sucks and holds the bonded substrate. The scalar robot 3150 carries the bonded substrate between the above devices by rotating the robot hand 3152 around the drive shaft 3151 in a horizontal plane and moving the robot hand 3152 away from or close to the drive shaft 3151. To do.

  The centering device 3070 receives the bonded substrate provided by the scalar robot 3150, executes a process (centering) for aligning the center of the bonded substrate with a predetermined position, and then delivers it to the scalar robot 3150.

  In the embodiment shown in FIG. 2, the separation device 3020 is disposed in the chamber 3010 in order to prevent the jet component medium (for example, water) from splashing around the periphery. The chamber 3010 is provided with a shutter 3060 for taking in and out the robot hand 3152 of the scalar robot 3150. In addition, the separation device 3020 includes a nozzle 3040 that ejects a jet. The position of the nozzle 3040 is controlled by the orthogonal robot 3050. As the separation device 3020, as described later, other types of separation devices may be employed.

  The reversing device 3130 rotates the upper substrate of the two separated substrates by 180 degrees so as to turn upside down (the separation surface faces upward). Note that the scalar robot 3150 has a function of rotating the substrate 180 degrees so that the substrate is turned upside down, and the reversing device 3130 can be omitted.

  The cleaning / drying device 3120 cleans and separates each separated substrate. Here, instead of the cleaning / drying device 3120, a separate cleaning device and drying device may be employed.

  The separation system 3000 executes a bonded substrate separation process based on an instruction from the operation panel 3140.

  Hereinafter, a procedure of processing by this processing system will be described. First, the first cassette 3081 containing the bonded substrate to be processed is placed at a predetermined position on the loader 3080 either manually or automatically. Also, empty second cassette 3091, third cassette 3101 and fourth cassette 3111 are placed on first unloader 3090, second unloader 3100 and third unloader 3110, respectively. In this embodiment, the second cassette 3091 is used to accommodate the lower substrate after separation, and the third cassette 3101 is used to accommodate the upper substrate after separation. The The fourth cassette 3111 accommodates a bonded substrate (or a substrate after separation) that has failed to be separated. Here, the first cassette 3081 is placed on the loader 3080 so that the accommodated bonded substrate is horizontal. The second cassette 3091, the third cassette 3101 and the fourth cassette 3111 are placed on the first unloader 3090, the second unloader 3100 and the third unloader 3110, respectively, so that the respective substrates can be accommodated horizontally.

  FIG. 3 is a flowchart for explaining a processing procedure by the processing system 3000 when attention is paid to one bonded substrate. First, in step S101, the scalar robot 3150 sucks the bonded substrate in the first cassette 3081 on the loader 2080 from below and takes it out in a horizontal state, and delivers it to the centering device 3070 while maintaining the horizontal state. In step S102, the bonded substrate is centered by the centering device 3070 and delivered to the scalar robot 3150.

  In step S 103, the shutter 3060 of the chamber 3010 is opened, and the bonded substrate after centering is delivered to the separation device 3020 by the scalar robot 3150. Here, it is preferable that the scalar robot 3150 supports the bonded substrate after centering from below while maintaining the horizontal state, and delivers it to the separation device 3020. This can prevent the bonded substrate from falling. The bonded substrate delivered to the separation device 3020 has already been centered. Therefore, the bonded substrate can be aligned with the separation device 3020 by moving the robot hand 3152 of the scalar robot 3150 to a predetermined position and delivering it to the separation device 3020.

  In step S104, the shutter 3060 of the chamber 3010 is closed, and the separation process by the separation device 3020 is executed. In this embodiment, the separation device 3020 jets a jet from a nozzle 3040 toward the vicinity of the porous layer of the bonded substrate while rotating the bonded substrate horizontally while the bonded substrate is rotated. The substrate is separated into two substrates at the porous layer portion.

  In step S105, the shutter 3060 of the chamber 3010 is opened, and the separated lower substrate is received from the separation device 3020 by the scalar robot 3150 and delivered to the cleaning / drying device 3120. Here, the scalar robot 3150 preferably supports the substrate from below in a horizontal state, receives it from the separation device 3020, and delivers it to the cleaning / drying device 3120. This can prevent the substrate from falling.

  In step S106, the cleaning / drying apparatus 3120 starts the process of cleaning and drying the separated lower substrate.

  In parallel with this cleaning / drying process, in step S107, the scalar robot 3150 receives the separated upper substrate from the separation device 3020 and delivers it to the reversing device 3130. Here, it is preferable that the scalar robot 3150 receives the substrate from above in a horizontal state, receives it from the separation device 3020, and delivers it to the reversing device 3130. As a result, the possibility that the cutting waste or the like adhering to the separation surface adheres to the robot hand of the scalar robot 3150 can be reduced.

  In step S108, the reversing device 3130 rotates the received substrate by 180 degrees. Here, the process waits until the cleaning / drying processing of the lower substrate by the cleaning / drying apparatus 3120 is completed.

  In step S109, the scalar robot 3150 receives the lower substrate from the cleaning / drying apparatus 3120 and stores it in the second cassette 3091 on the first unloader 3090. Here, the scalar robot 3150 preferably receives the substrate from below in a horizontal state, receives it from the separation device 3020, and stores it in the second cassette 3091. This can prevent the substrate from falling.

  In step S110, the scalar robot 3150 receives the upper substrate from the reversing device 3130 and delivers it to the cleaning / drying device 3120. Here, it is preferable that the scalar robot 3150 supports the substrate from below in a horizontal state, receives it from the reversing device 3130, and delivers it to the cleaning / drying device 3120. This can prevent the substrate from falling.

  In step S111, the cleaning / drying apparatus 3120 cleans and dries the upper substrate. In step S1112, the scalar robot 3150 receives the upper substrate from the cleaning / drying apparatus 3130 and stores it in the third cassette 3101 on the second unloader 3100. Here, the scalar robot 3150 preferably receives the substrate from below in a horizontal state, receives it from the separation device 3020, and stores it in the third cassette 3101. This can prevent the substrate from falling.

  In the process shown in FIG. 3, the lower substrate after separation is first subjected to the cleaning / drying process. On the contrary, the upper substrate after separation is first subjected to the cleaning / drying process. You may give it. The processing in this case is, for example, in the order of S101, S102, S103, S104, S107, S108, S110, S111, S112, S105, S106, and S109.

  In this separation system 3000, for example, according to an instruction given from the operator via the operation panel 3140, the substrate that has failed to be separated is accommodated in the fourth cassette 3111 on the third unloader 3110 by the scalar robot 3150. Here, instead of recognizing the occurrence of the separation failure according to an instruction from the operator, a separation state monitoring device may be provided, and the separation device may detect the separation failure.

  The above description is the operation of the separation system 3000 when attention is paid to one bonded substrate. In this separation system 3000, a plurality of bonded substrates can be processed in parallel.

  FIG. 4 is a diagram illustrating an example of a processing procedure when a plurality of bonded substrates are processed in parallel. In the figure, “centering” means centering processing by the centering device 3070, “separation” means separation processing by the separation device 3020, “inversion” means inversion processing by the inversion device 3130, and “cleaning / drying” means The cleaning / drying process by the cleaning / drying apparatus 3120 is shown. T1 to T6 respectively indicate periods for processing one bonded substrate (upper and lower two substrates after separation) by one apparatus. Reference numerals “# 1” to “# 6” are numbers of bonded substrates, “# 1” to “# 6” are suffixed with “a”, and indicate an upper substrate after separation. The symbols with “b” at the end of “# 1” to “# 6” indicate the lower substrate after separation.

  In the example shown in FIG. 4, only the centering process of the bonded substrate # 1 is executed in the period T1. In the period T2, the separation process of the bonded substrate # 1 and the subsequent centering process of the bonded substrate # 2 are performed in parallel.

In the period T3,
Separating the bonded substrate # 2;
The subsequent centering process of the bonded substrate # 3;
Inversion processing of the upper substrate # 1a obtained by separating the bonded substrate # 1;
Cleaning / drying of two substrates # 1a and # 1b obtained by separating the bonded substrate # 1;
Are executed in parallel. In the illustrated example, in the first half of the period T3, the inversion processing of the upper substrate # 1a and the cleaning / drying processing of the lower substrate # 1b are performed in parallel with the centering processing and separation processing, and in the second half of the period T3. Then, the cleaning / drying process of the upper substrate # 1a after the inversion is executed in parallel with the centering process and the separation process.

  FIG. 5 is a diagram illustrating an example of a transfer process of a bonded substrate or a substrate after separation by a scalar robot and an execution procedure of a process by each device. In FIG. 5, horizontal lines indicate processing in each apparatus, and diagonal lines indicate substrate transfer processing by the scalar robot 3150.

  In the processing system 3000 according to this embodiment, only one scalar robot 3150 is employed as a robot for transporting the bonded substrate or the separated substrate. Therefore, it is not possible to simultaneously carry a plurality of bonded substrates or separated substrates.

  However, since the time required for the transfer process by the scalar robot 3150 is usually sufficiently shorter than the time required for the separation process by the separation device 3020, for example, only one robot transfers the bonded substrate or the substrate after separation. It is enough. However, when it is necessary to transport a plurality of bonded substrates or separated substrates simultaneously, for example, when the processing efficiency is low with only one robot, a plurality of robots (for example, a scalar robot) can be provided. That's fine.

  As described above, according to this processing system, since a plurality of bonded substrates can be processed in parallel, high throughput can be obtained.

  According to this embodiment, since the bonded substrate or the separated substrate is transported in a horizontal state, a relatively simple robot (for example, a scalar robot) can be employed as the transport mechanism.

  Further, according to this embodiment, each device is arranged at a substantially equidistant position from a predetermined position (scalar robot drive shaft). Therefore, by rotating the robot hand 3152 around the drive shaft 3151 in the horizontal plane and moving the robot hand 3152 away from or close to the drive shaft 3151, the bonded substrates or the separated substrates are separated between the processing apparatuses described above. The substrate can be transported. Therefore, for example, there is no need to provide a drive mechanism for moving the scalar robot 3150 in the horizontal plane.

  Next, a configuration example of the separation device 3020 will be given.

[First Configuration Example of Separation Device]
The separation apparatus according to this configuration example applies a water jet method. In general, in the water jet method, water is jetted onto a target in a high-speed, high-pressure bundle flow to cut and process ceramics, metal, concrete, resin, rubber, wood, etc. This is a method of removing, cleaning the surface, and the like. (Refer to page 4 of "Waterjet" Vol. 1 No. 1 (1984)).

  This separation device injects a high-speed, high-pressure fluid in a bundle-like flow in the surface direction of the substrate against the porous layer (separation layer) of the bonded substrate, which is a fragile structural part, By selectively collapsing the porous layer, the substrate is separated at the portion of the porous layer. Hereinafter, this bundled flow is referred to as “jet”. In addition, the fluid constituting the jet is referred to as a “jet constituent medium”. Jet constituent media include water, organic solvents such as alcohol, hydrofluoric acid, nitric acid and other acids, potassium hydroxide and other alkalis, air, nitrogen gas, carbon dioxide gas, rare gas, etching gas and other gases, or plasma. There may be.

  When this separation apparatus is applied to a manufacturing process of a semiconductor device, for example, a separation process of a bonded substrate, it is preferable to use pure water from which impurity metals and particles are removed as much as possible as a jet constituent medium.

  The jet injection conditions may be determined according to, for example, the type of separation region (for example, porous layer), the shape of the outer peripheral portion of the bonded substrate, and the like. Examples of jet injection conditions include pressure applied to the jet constituent medium, jet scanning speed, nozzle width or diameter (substantially the same as the jet diameter), nozzle shape, distance between the nozzle and the separation region, and flow rate of the jet constituent medium. Etc. are important parameters.

  According to the separation method using the water jet method as described above, the bonded substrate can be separated into two substrates without any particular damage to the bonded substrate.

This separation apparatus holds a plate-like sample such as a bonded substrate so that its sample surface is substantially horizontal, and in that state, separates the sample with a fragile structure (for example, a porous layer). . Thus, by holding the sample in a state where the sample surface is horizontal, for example,
(1) Prevent the sample from dropping
(2) Facilitating sample holding,
(3) Facilitating sample transportation,
(4) Streamline the sample transfer between the separation device and other devices,
(5) Since each component can be arranged in the vertical direction, the projection area (occupied area) of the separation device can be reduced.

  FIG. 6 is a diagram illustrating a schematic configuration of the separation device according to the first configuration example. The separation apparatus 1000 includes a pair of substrate holding units 270 and 1010.

  The upper substrate holding part 270 is connected to one end of the rotating shaft 140. The other end of the rotating shaft 140 is connected to the rotating shaft of the motor 110 via the coupling 130. In addition, the motor 110 and the rotating shaft 130 can be connected not via the coupling 130 but via, for example, a belt, or via other mechanisms. The motor 110 is fixed to a support member 120 fixed to the upper table 170. The motor is controlled by a control unit (not shown).

  Inside the rotating shaft 140, a vacuum line 141 for vacuum-adsorbing the bonded substrate 50 to the substrate holding unit 270 is provided. The vacuum line 141 is connected to an external vacuum line via the ring 150. ing. This external vacuum line is provided with an electromagnetic valve (not shown), and the opening and closing of the electromagnetic valve is controlled as necessary by a control unit (not shown). The substrate holding portion 270 is provided with a suction hole 271 for vacuum-sucking the bonded substrate 50, and the suction hole 271 is connected to the vacuum line 141. The suction hole 271, the vacuum line 141, and the electromagnetic valve constitute a vacuum suction mechanism of the substrate holding unit 270. The rotating shaft 140 is supported by the upper table 170 via the bearing 160.

  The lower substrate holder 1010 has a Bernoulli chuck 1013. The Bernoulli chuck 1013 is a chuck that adsorbs a sample such as a bonded substrate by using a negative pressure at the center of the chuck by blowing gas radially from the center of the umbrella chuck along the umbrella. .

  The substrate holding part 1010 having the Bernoulli chuck 1013 is connected to one end of the lifting shaft 1020, and the gas introduction part 1011 of the Bernoulli chuck 1013 is connected to the pressure line 1021 inside the lifting shaft 1020. The pressure line 1021 is connected to an external pressure line via a ring 1022. This external pressure line is provided with a solenoid valve (not shown), and the opening and closing of the solenoid valve is controlled as necessary by a control unit (not shown).

  The other end of the elevating shaft 1020 is connected to the piston rod of the air cylinder 320 via the coupling 330. The lifting shaft 1020 is supported by the lower table 240 via the reciprocating / rotating guide 1030.

  The nozzle 3040 is controlled by the orthogonal robot 3050 described above. A shutter 3030 is provided between the nozzle 3040 and the substrate holders 270 and 1010, and the shutter 3030 is opened and closed by a motor 250. By jetting a jet from the nozzle 3040 with the shutter 3030 opened, the jet can be driven into the bonded substrate board 50. On the other hand, by closing the shutter 3030, it is possible to block jet driving on the bonded substrate 50.

  Hereinafter, a procedure of separation processing by the separation apparatus 1000 will be described. First, the piston rod is accommodated in the air cylinder 320 so that a corresponding interval is provided between the substrate holding part 270 and the substrate holding part 1010. In this state, the bonded substrate board 50 is horizontally supported from below by the robot hand 3152 of the scalar robot 3150 and inserted into a predetermined position between the substrate holder 270 and the substrate holder 1010, and the substrate holder 1010. Place on top.

  FIG. 7 is a diagram schematically showing the outer appearance of the substrate holders 270 and 1010. The substrate holding portions 270 and 1010 are provided with a plurality of guide members 270a and 1010a, respectively, for preventing the bonded substrate from being displaced or protruding from the substrate holding portion during separation of the bonded substrates. Have in part.

Passing the bonded substrate 50 to the substrate holding unit 270 or the substrate holding unit 1010 in a state where the robot hand 3152 of the scalar robot 3150 supports the bonded substrate 50 from below; and
The robot hand sucks and receives from the substrate holders 270 and 1010 the back surface of each substrate after separation (the separation surface is the front surface);
For example, as shown in FIG. 7, it is preferable to arrange a plurality of guide members 270a and 1010a at appropriate intervals so that the robot hand can be taken in and out. For example, three guide members 270a and 1010a are arranged at a central angle of 120 degrees.

  Next, by pushing the piston rod into the air cylinder 320, the upper substrate holding portion 1010 is moved upward until the distance between the upper surface of the bonded substrate board 50 and the support portion of the upper substrate holding portion 270 becomes a predetermined interval. Move to.

  Next, an electromagnetic valve provided in an external pressure line is opened, and gas is blown radially from the center of the Bernoulli chuck 1013 of the substrate holding unit 1010, thereby adsorbing the bonded substrate 50.

  Next, the motor 110 is operated to transmit the rotational force to the rotating shaft 140. Thereby, the rotating shaft 140, the substrate holding unit 270, the bonded substrate 50, the substrate holding unit 1010, and the rotating shaft 1020 rotate integrally.

  Next, in a state where the shutter 3030 is closed, a pump (not shown) connected to the nozzle 3040 is operated to feed a high-pressure jet constituent medium (for example, water) into the nozzle 3040. Thereby, a high-pressure jet is ejected from the nozzle 260. When the jet is stabilized, the shutter 3030 is opened. Thereby, the jet sprayed from the nozzle 3040 is continuously driven into the porous layer of the bonded substrate 50, and the separation of the bonded substrate 50 is started.

  When the separation of the bonded substrate stack 50 is completed, the shutter 3030 is closed and the pump connected to the nozzle 3040 is stopped to stop the jet driving on the bonded substrate stack 50. Further, the operation of the motor 110 is stopped.

  Next, the vacuum suction mechanism of the substrate holding unit 270 is operated while the Bernoulli chuck 1013 of the substrate holding unit 1010 is operated. Thereby, the separated upper substrate is vacuum-sucked to the substrate holding unit 270, and the separated lower substrate is sucked to the Bernoulli chuck of the substrate holding unit 1010.

  Next, by accommodating the piston rod in the air cylinder 320, an appropriate distance is provided between the substrate holder 270 and the substrate holder 1010. Thereby, the two separated substrates are separated from each other.

  Next, the robot hand 3152 of the scalar robot 3150 is inserted between the Bernoulli chuck 1013 of the substrate holding unit 1010 and the substrate, and the substrate is sucked by the robot hand 3152. Thereafter, the adsorption of the substrate holding unit 1010 by the Bernoulli chuck 1013 is released, and the substrate is transferred from the substrate holding unit 1010 to the robot hand 3152.

  Next, the robot hand 3152 of the scalar robot 3150 is inserted between the substrate holding unit 270 and the substrate, and the substrate is sucked by the robot hand 3152. Then, the vacuum suction by the substrate holding unit 270 is released, and the substrate is transferred from the substrate holding unit 270 to the robot hand 3152.

  Here, after the bonded substrate 50 is separated into two sheets, a jet constituent medium exists between the two substrates. Therefore, when this is a liquid (for example, water), the surface tension is considerably high. large. Therefore, in order to separate the two separated substrates with a small force, it is preferable to supply a jet from the nozzle 3040 between the two substrates. In this case, after separating the two substrates, the jet from the nozzle 3040 is stopped. Instead, a mechanism for jetting jets used to separate the two substrates may be provided separately.

[Second Configuration Example of Separation Device]
Similar to the first configuration example, this configuration example also relates to a separation apparatus that separates a bonded substrate by a jet.

  FIG. 8 is a diagram illustrating a schematic configuration of the separation device according to the second configuration example. FIG. 9 is a diagram showing a part of the separation apparatus shown in FIG. The separation apparatus 1900 includes a pair of substrate holding units 1909 and 1901, and holds the bonded substrate 50 horizontally with the substrate holding units 1909 and 1901 sandwiched from above and below. Then, a jet is ejected from the nozzle 3040, and the jet is driven in the vicinity of the porous layer of the bonded substrate 50, whereby the bonded substrate 50 is separated into two substrates at the porous layer portion.

  The lower substrate holding portion 1901 has a convex support portion 1903 for forming a gap for inserting the robot hand 3152 of the scalar robot 3150 between the bonded substrate board 50 and the surface of the substrate holding portion 1901. . The support portion 1903 is provided with a suction hole 1902 for vacuum adsorbing the bonded substrate 50. Further, the substrate holding portion 1901 has a shift prevention member 1911 on the outer periphery of the support portion 1903. The deviation preventing member 1911 is made of, for example, rubber or resin, and prevents the bonded substrate board 50 from moving in the surface direction. By providing the shift preventing member 1911, the bonded substrate 50 can be held with a small pressing force or suction force.

  In addition, the substrate holding unit 1901 is connected to one end of the rotating shaft 1904. The rotating shaft 1904 is supported by a support table 1920 via a bearing 1906. A seal member 1905 for sealing an opening provided in the support base 1920 so as to allow the rotation shaft 1904 to pass therethrough is provided on the bearing 1906. A vacuum line 1907 is provided inside the rotating shaft 1804, and the vacuum line 1907 is connected to a plurality of suction holes 1902 of the substrate holding unit 1901. The vacuum line 1907 is connected to an external vacuum line via a ring 1908. The rotation shaft 1904 is connected to a rotation source (not shown), and rotates by a rotational force applied from the rotation source.

  A substrate holding unit 1909 is disposed above the substrate holding unit 1901. The substrate holder 1909 is connected to the drive shaft 1910 of the drive mechanism 1930 and is moved up and down by the drive mechanism 1930. Further, the drive shaft 1910 is rotatably supported by a drive mechanism 1930.

  The upper substrate holding part 1909 has a convex support part 1912 for forming a gap for inserting the robot hand 3152 of the scalar robot 3150 between the bonded substrate board 50 and the surface of the substrate holding part 1909. The support portion 1912 is provided with a suction hole 1914 for vacuum adsorbing the bonded substrate 50. Further, the substrate holding part 1909 has a shift prevention member 1913 on the outer periphery of the support part 1912. The deviation prevention member 1913 is made of, for example, rubber or resin, and prevents the bonded substrate board 50 from moving in the surface direction. By providing the shift prevention member 1913, the bonded substrate 50 can be held with a small pressing force or suction force.

  The nozzle 3040 is controlled by the orthogonal robot 3050 described above. A shutter 3030 is provided between the nozzle 3040 and the substrate holder 1901, and the shutter 3030 is opened and closed by a motor 250. By jetting a jet from the nozzle 3040 with the shutter 3030 opened, the jet can be driven into the bonded substrate board 50. On the other hand, by closing the shutter 3030, it is possible to block jet driving on the bonded substrate 50.

  Hereinafter, a procedure of separation processing by the separation device 1900 will be described. First, the substrate holding unit 1909 is raised by the drive mechanism 1930 to provide a suitable space between the substrate holding unit 1909 and the substrate holding unit 1901. In this state, the bonded substrate stack 50 is horizontally supported from below by the robot hand 3152 of the scalar robot 3150 and placed on the support portion 1903 of the substrate holder 1901. Next, the substrate holding unit 1909 is lowered by the driving mechanism 1930 to cause the substrate holding unit 1909 to press the bonded substrate 50. As a result, the bonded substrate stack 50 is pressed and held from both sides by the substrate holders 1909 and 1901.

  Next, the respective vacuum suction mechanisms of the substrate holders 1901 and 1909 are operated to suck the bonded substrate 50. Next, a rotational force is transmitted to the rotary shaft 1904 by operating a rotation source (not shown). Thereby, the rotating shaft 1904, the substrate holding part 1901, the bonded substrate board 50, and the substrate holding part 1909 rotate integrally.

  Next, with the shutter 3030 closed, a pump (not shown) connected to the nozzle 3040 is operated to feed a high-pressure jet constituent medium (for example, water) into the nozzle 3040. Thereby, a high-pressure jet is ejected from the nozzle 3040. When the jet is stabilized, the shutter 3030 is opened. Thereby, the jet sprayed from the nozzle 3040 is continuously driven into the porous layer of the bonded substrate 50, and the separation of the bonded substrate 50 is started.

  When the separation of the bonded substrate stack 50 is completed, the shutter 3030 is closed and the pump connected to the nozzle 3040 is stopped to stop the jet driving on the bonded substrate stack 50. Further, the rotation of the bonded substrate 50 is stopped by stopping the driving of the rotating shaft 1904.

  Next, each vacuum suction mechanism of the substrate holders 1901 and 1909 is operated again. As a result, the separated upper substrate is adsorbed to the substrate holding unit 1909 and the separated lower substrate is adsorbed to the substrate holding unit 1901. Next, the substrate holding unit 1909 is raised by the drive mechanism 1930. Thereby, the separated two substrates are separated from each other.

  Next, the robot hand 3152 of the scalar robot 3150 is inserted between the substrate holding unit 1901 and the substrate, and the substrate is sucked by the robot hand 3152. Thereafter, the suction by the vacuum suction mechanism of the substrate holding unit 1901 is released, and the substrate is transferred from the substrate holding unit 1901 to the robot hand 3152.

  Next, the scalar robot 3150 robot hand 3152 is inserted between the substrate holding unit 1909 and the substrate, and the robot hand 3152 sucks the substrate. Thereafter, the suction of the substrate holding unit 1909 by the vacuum suction mechanism is released, and the substrate is transferred from the substrate holding unit 1909 to the robot hand 3152.

  Here, after the bonded substrate 50 is separated into two sheets, a jet constituent medium exists between the two substrates. Therefore, when this is a liquid (for example, water), the surface tension is considerably high. large. Therefore, in order to separate the two separated substrates with a small force, it is preferable to supply a jet from the nozzle 3040 between the two substrates. In this case, after separating the two substrates, the jet from the nozzle 3040 is stopped. Instead, a mechanism for jetting jets used to separate the two substrates may be provided separately.

[Third Configuration Example of Separation Device]
10 and 11 are cross-sectional views illustrating a schematic configuration of a separation device according to a third configuration example. 10 shows a state in which the substrate support member is opened, and FIG. 11 shows a state in which the substrate support portion is closed.

  The separation device 4000 includes a pair of substrate support members 4001 and 4004 connected by a hinge part 4003. The substrate support members 4001 and 4004 have an annular shape that fits the outer periphery of the bonded substrate stack 50. Further, the substrate supporting members 4001 and 4004 are closed so as to sandwich the bonded substrate 101, and the sealed space constituting member that surrounds the exposed portion of the porous layer 50c at the edge of the bonded substrate 50 to form the sealed space 4020. Function as.

  The substrate supporting members 4001 and 4004 are provided with sealing members (for example, O-rings) 4002 and 4005 for ensuring airtightness with the bonded substrate 50, respectively. One substrate support member 4004 is provided with a seal member 4008 for ensuring airtightness with the other substrate support member 4001.

  In the separation device 4000, the substrate support member 4001 is locked by the lock mechanism 4007 in a state where the bonded substrate 50 is supported by being sandwiched from both sides by the substrate support members 4001 and 4004.

  One substrate support member 4004 has an injection part 4006 for injecting fluid into the sealed space 4020. The injection unit 4006 is connected to a pressure source 4011 such as a pump, and the sealed space 4020 is filled with a fluid (for example, water) supplied from the pressure source 4011.

  The substrate support member 4001 and / or 4004 has a bubble removal port for removing bubbles generated when fluid is injected into the sealed space 4020, and the bubble removal when pressure is applied to the fluid in the sealed space 4020. A valve for closing the mouth may be provided.

  The pressure source 4011 applies pressure to the fluid while the sealed space 4020 is filled with the fluid. The pressure source 4011 preferably has a mechanism for adjusting the pressure applied to the fluid, whereby the pressure applied to the fluid is increased in the initial stage of separation of the bonded substrate 50, and then gradually or stepwise. It is preferable to lower it. For example, the initial stage of separation is, for example, 20 kg / square cm, and then the pressure is gradually decreased, and the final stage of separation is, for example, 1 kg / square cm.

  The lower substrate support member 4004 is supported by a support base 4006. The support base 4006 has a vent 4030 that allows the lower surface of the bonded substrate 50 to communicate with the outside. Thereby, the lower surface of the bonded substrate 50 is maintained at atmospheric pressure. An air cylinder 4010 is provided near the center of the support base 4006. A support portion 4009 is attached to the piston rod of the air cylinder 4010. The support portion 4009 is pushed upward when the bonded substrate or the separated substrate is transferred to and from the robot hand 3152 of the scalar robot 3150. Thus, a gap for inserting the robot hand 3152 is formed between the lower substrate support member 4004 and the bonded substrate or the separated substrate.

  Hereinafter, a procedure of separation processing of the bonded substrate 50 by the separation device 4000 will be described. The following separation process is performed, for example, at atmospheric pressure.

  First, the lock by the lock mechanism 4007 is released, and the substrate support member 4001 is opened and the support portion 4009 is raised as shown in FIG. Next, the bonded substrate stack 50 is placed on the substrate support member 4004 by the robot hand 3152 of the scalar robot 3150.

  Next, as shown in FIG. 11, the support portion 4009 is lowered and the substrate support portion 4001 is closed, and the substrate support member 4001 is locked by the lock mechanism 4007. In this state, a sealed space 4020 is formed so as to surround a portion where the porous layer 50 c at the edge of the bonded substrate board 50 is exposed.

  Next, a fluid is injected into the sealed space 4020 by the pressure source 4011. Next, pressure is applied to the fluid in the sealed space 4020 by the pressure source 4011. Thereby, the pressure by the substantially stationary fluid is applied to the porous layer 50 c exposed at the edge of the bonded substrate stack 50.

  By the application of this pressure, the porous layer 50c exposed at the edge of the bonded substrate 50 is destroyed and separation is started. And destruction of the porous layer 50c advances by injecting a fluid into the destroyed part. Then, the fluid is sufficiently injected into the laminated substrate 50 by the progress of the destruction of the porous layer 50c. At this time, due to the pressure difference between the pressure of the fluid acting on the inside of the bonded substrate 50 and the pressure acting on the non-sealed space (space other than the sealed space), the bonded substrate 50 includes the substrate 50a and the substrate 50b. Separation force acts in the direction of separation, and separation proceeds by this separation force.

  When the separation is completed, the pressure source 4011 is controlled to set the inside of the sealed space 4020 to atmospheric pressure, for example, and then the lock by the lock mechanism 4007 is released. Then, the substrate support member 4001 is opened and the support portion 4009 is raised to provide a corresponding gap between the lower substrate support member 4004 and the separated bonded substrate. Then, with the robot hand 3152 of the scalar robot 3150, first, the upper substrate 50a is taken out, and then the lower substrate 50b is taken out.

  In this case, the upper substrate 50 a is inverted by the reversing device 3130, cleaned / dried by the cleaning / drying device 3120 and accommodated in the third cassette 3101, and then the lower substrate 50 b is delivered to the cleaning / drying device 3120. Alternatively, after the upper substrate 50 a is delivered to the reversing device 3130, the lower substrate 50 b is delivered to the cleaning / drying device 3120.

[Fourth Configuration Example of Separation Device]
FIG. 12 is a diagram illustrating a schematic configuration of a separation device according to a fourth configuration example. The separation device 5000 applies pressure to the entire bonded substrate 50, and thereby separates the bonded substrate 50 with a porous layer.

  The separation device 5000 includes a sealed container 5001 for accommodating the bonded substrate 50 to form a sealed space, and a sealed lid 5002 for opening and closing an opening for taking in and out the robot hand 3152 of the scalar robot 3150. Have. A sample support member 5011 for horizontally supporting the bonded substrate 50 from below is provided in the sealed container 5001.

  The separation device 5000 has an inlet 5008 for supplying a fluid into the sealed space. The inlet 5008 is connected to a pump 5010 via a valve 5009. The separation device 5000 has a discharge port 5006 for discharging the fluid in the hermetic container 5001, and the discharge port 5006 is connected to a discharge control valve 5007.

  This separation device 5000 preferably further includes, for example, a vibration source 5004 for applying vibration energy such as ultrasonic waves to the bonded substrate 50. By providing this vibration source 5004, a two-stage separation process can be performed. That is, in the first stage, as described above, the pore walls of the porous layer are destroyed by applying pressure to the sealed space formed by the sealed container 5001. In the second stage, the remaining hole wall is destroyed by the vibration energy, whereby the bonded substrate 50 can be completely separated by the porous layer.

  Hereinafter, the separation process by the separation device 5000 will be described. First, the sealing lid 5002 is opened, and the bonded substrate board 50 is transferred into the sealed container 5001 by the robot hand 3152 of the scalar robot 3150 and placed on the support member 5011.

  Next, the sealing lid 5002 is closed, the pump 5010 is operated, and the valve 5009 is opened to inject fluid into the sealed space to bring the sealed space to a predetermined pressure (start of the first stage separation process). . Here, a gas such as air or a liquid such as water can be used as the fluid. It is also preferable to use an etching gas or an etching solution that can selectively etch the cavity-containing layer as the fluid. In this case, it is possible to improve the efficiency of the separation process and to reduce the pore walls that can remain after the separation.

In this state, for example, it waits for a predetermined time to elapse. As a result, the bonded substrate 50 is completely separated by the porous layer, or a considerable amount of pore walls are destroyed. Next, the pump 5010 is stopped and the valve 5009 is closed. Next, the valve 5007 is opened to discharge the fluid in the sealed space through the discharge port 5006, thereby returning the pressure in the sealed space to normal pressure (end of the first stage separation process). In addition, when using the fluid which has a bad influence on a natural environment etc. as a fluid, it cannot be overemphasized that the fluid discharged | emitted through the discharge port 211 is collect | recovered, and it processes appropriately.

Next, the vibration source 5004 is driven to apply vibration energy to the bonded substrate 50 in the hermetically sealed container, thereby destroying the undestructed hole walls and completely separating the bonded substrate 50 (second stage). Separation process). Note that the second-stage separation process may be performed in parallel with the execution of the first separation process.

  Next, when a liquid is used as the fluid, the valve 5007 is opened to discharge the fluid in the sealed container as necessary. Next, the sealing lid 5002 is opened, and the upper substrate is first taken out by the robot hand 3152 of the scalar robot 3150, and then the lower substrate is taken out. In this case, after the upper substrate is reversed by the reversing device 3130 and cleaned / dried by the cleaning / drying device 3120 and accommodated in the third cassette 3101, or after the upper substrate is transferred to the reversing device 3130, The lower substrate is transferred to the cleaning / drying apparatus 3120.

[Another configuration example of a robot hand of a scalar robot]
Next, another configuration example of the robot hand of the scalar robot 3150 will be described. FIG. 13 is a diagram illustrating another configuration example of the robot hand of the scalar robot 3150. FIG. 13A is a plan view, and FIG. 13B is a cross-sectional view taken along line AA ′ of FIG. 13A. A robot hand shown in FIG. 13 includes a U-shaped main body 9004 and holding portions 9001 to 9003 for holding a bonded substrate or a separated substrate at its end. As a material of the holding portions 9001 to 9003, for example, PTFE is suitable.

  Since the robot hand according to this configuration example contacts only the end of the bonded substrate or the separated substrate, the possibility of scratching the surface of the bonded substrate or the separated substrate is extremely low.

  In addition, since the robot hand according to this configuration example contacts only the end portion of the separated substrate, the separated substrate is held from below regardless of whether the separation surface is on the upper side or the lower side. In this case, the possibility of scratching the surface of the substrate due to cutting waste or the like is low.

  Further, the robot hand according to this configuration example holds the bonded substrate or the separated substrate in a state in which the bonded substrate or the separated substrate is restricted from moving in the surface direction. It is possible to prevent the subsequent substrate from falling.

  In the robot hand according to this configuration example, it is also effective to provide a suction mechanism on all or a part of each holding unit 9001 to 9003. In this case, it is possible to more effectively prevent the bonded substrate or the separated substrate from falling, and for example, it is possible to support the substrate from above.

  Further, the robot hand according to this configuration example may further include a mechanism for rotating the main body 9004 180 degrees in a state where the separated substrate is adsorbed, and thereby turning the separated substrate upside down. In this case, the inverting device 3130 can be omitted.

It is a figure explaining the manufacturing method of the SOI substrate which concerns on suitable embodiment of this invention in order of a process. It is a top view which shows schematic structure of the processing system which concerns on suitable embodiment of this invention. It is a flowchart for demonstrating the process sequence by the processing system at the time of paying attention to one bonded substrate. It is a figure which shows an example of the process sequence in the case of processing several bonded substrates in parallel. It is a figure which shows an example of the execution procedure of the conveyance process of each bonded substrate by a scalar robot, or each board | substrate after isolation | separation, and the process by each apparatus. It is a figure which shows schematic structure of the separation apparatus which concerns on a 1st structural example. It is a figure which shows typically the external appearance of the board | substrate holding | maintenance part shown in FIG. It is a figure which shows schematic structure of the separation apparatus which concerns on a 2nd structural example. It is a figure which shows a part of separation apparatus shown in FIG. It is sectional drawing which shows schematic structure of the separation apparatus which concerns on a 3rd structural example. It is sectional drawing which shows schematic structure of the separation apparatus which concerns on a 3rd structural example. It is a figure which shows schematic structure of the separation apparatus which concerns on a 4th structural example. It is a figure which shows the other structural example of the robot hand of a scalar robot.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 1st board | substrate 11 Single-crystal Si substrate 12 Porous Si layer 13 Non-porous single-crystal Si layer 15 Insulating layer 20 2nd board | substrate 50 Bonded board | substrate 1000 Separation apparatus 110 Motor 120 Support member 130 Coupling 140 Rotating shaft 141 Vacuum line 150 Ring 160 Bearing 170 Upper table 240 Lower table 250 Motor 270 Substrate holding part 270a Displacement prevention member 271 Suction hole 310 Leg member 320 Air cylinder 330 Coupling 1010 Substrate holding part 1011 Introduction part 1013 Bernoulli chuck 1020 Rotating shaft 1021 Pressure line 1022 Ring 1030 Reciprocating / rotating guide 1900 Separating device 1901 Substrate holding portion 1902 Suction hole 1903 Supporting portion 1904 Rotating shaft 1905 Seal member 1906 Bearing 1 907 Vacuum line 1908 Ring 1909 Substrate holding portion 1910 Drive shaft 1911 Deviation prevention member 1912 Support portion 1913 Deviation prevention member 1914 Suction hole 1920 Support base 1921 Nozzle 1922 Shutter 1930 Drive mechanism 3000 Separation system 3010 Chamber 3020 Separation device 3030 Shutter 3040 Robot 3060 Shutter 3070 Centering device 3080 Loader 3081 First cassette 3090 First unloader 3091 Second cassette 3100 Second unloader 3101 Third cassette 3110 Third unloader 3111 Fourth cassette 3120 Cleaning / drying device 3130 Inversion device 3140 Operation panel 3150 Scalar Robot 3151 Drive shaft 3152 Robot hand 4000 Separating device 4 001 Substrate support member 4002 Seal member 4003 Hinge portion 4004 Substrate support member 4005 Seal member 4006 Injection portion 4007 Lock mechanism 4008 Seal member 4009 Support portion 4010 Air cylinder 4011 Pump 5000 Separation device 5001 Sealed container 5002 Sealed lid 5004 Exhaust source 5006 Discharge port 5006 Valve 5008 Inlet 5009 Valve 5010 Pump 5011 Support member 9001 Holding part 9002 Holding part 9003 Holding part 9004 Body of robot hand

Claims (4)

A processing system for processing a sample,
A plurality of processing devices for processing the sample, and a transport mechanism for transporting the sample between the plurality of processing devices,
The plurality of processing devices include a separation device that separates the sample while being held horizontally, and a reversing device that inverts the upper plate sample of the two plate samples obtained by separation by the separation device. A processing system characterized by being included. The sample is a plate-like sample having a separation layer inside,
2. The separation device according to claim 1, wherein the separation device separates the plate-like sample by the separation layer by ejecting a bundle of fluid toward the separation layer of the plate-like sample. The processing system described.   The processing system according to claim 2, wherein the fluid is not ejected to the plate-like sample until the fluid to be ejected is stabilized.   The processing system according to claim 3, further comprising a shutter disposed between the nozzle that ejects the fluid and the plate-like sample to block the fluid.

Images