JP2000049061A - Device and method for treating sample - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the occurrence of defects when a sample is divided into two parts by providing such a dividing mechanism that partially divides the sample from a layer for division so as to leave a prescribed area of the layer for division as an undivided area. SOLUTION: A dividing device 100 is provided with substrate holding sections 120 and 150 having vacuum sucking mechanisms and the holding sections 120 and 150 hold a laminated substrate 101 from both sides. A controller 190 constitutes a dividing mechanism which divides the laminated substrate 101 into two substrates 101a and 101c by leaving the central part of the porous layer 101b of the substrate 101 as an undivided area by jetting water, etc., upon the porous layer 101b while rotating the substrate 101 by controlling a motor 110. Therefore, the occurrence of defects can be prevented when the laminated substrate 101 is divided into the substrate 101a and 101c.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for processing a sample, and more particularly, to a processing apparatus and a processing method suitable for processing a sample having a separation layer therein.

[0002]

2. Description of the Related Art As a substrate having a single crystal Si layer on an insulating layer, a substrate (SOI substrate) having an SOI (silicon on insulator) structure is known. Devices using this SOI substrate have a number of advantages that cannot be achieved with a normal Si substrate. The advantages include, for example, the following. (1) Dielectric separation is easy and suitable for high integration. (2) Excellent radiation resistance. (3) The stray capacitance is small, and the operation speed of the element can be increased. (4) No well step is required. (5) Latch-up can be prevented. (6) A complete depletion type field effect transistor can be formed by thinning.

[0003] Since the SOI structure has various advantages as described above, research on a forming method thereof has been advanced in recent decades.

As an SOI technique, SOS (silicon on s) is conventionally formed by forming Si on a single crystal sapphire substrate by heteroepitaxial growth by a CVD (chemical vapor deposition) method.
apphire) technology is known. Although this SOS technology has gained a reputation as the most mature SOI technology,
Practical due to large number of crystal defects due to lattice mismatch at the interface between the Si layer and the underlying sapphire substrate, mixing of aluminum constituting the sapphire substrate into the Si layer, cost of the substrate, delay in increasing the area, etc. Has not progressed.

Following SOS technology, SIMOX (separa
tion by ion implanted oxygen) technology has emerged. With respect to the SIMOX technology, various methods have been attempted with the aim of reducing crystal defects and reducing manufacturing costs. As this method, a method of implanting oxygen ions into a substrate to form a buried oxide layer, bonding two wafers with an oxide film interposed therebetween, and polishing or etching one of the wafers to form a thin single-crystal Si layer A method of leaving on an oxide film, furthermore, hydrogen ions are implanted at a predetermined depth from the surface of the Si substrate on which the oxide film is formed, and after bonding with the other substrate, a thin film is formed on the oxide film by heat treatment or the like. A method of removing the bonded substrate (the other substrate) while leaving the single crystal Si layer, or the like can be given.

The present applicant has disclosed a new SOI technique in Japanese Patent Application Laid-Open No. Hei 5-21338. According to this technique, a first substrate in which a non-porous single crystal layer (including a single crystal Si layer) is formed on a single crystal semiconductor substrate in which a porous layer is formed is connected to a second substrate via an insulating layer. After bonding, the two substrates are separated by a porous layer, and the non-porous single crystal layer is transferred to a second substrate. This technology has an excellent thickness uniformity of the SOI layer, can reduce the crystal defect density of the SOI layer, has a good surface flatness of the SOI layer, and does not require an expensive special specification manufacturing apparatus. Is, several hundred dollars
It is excellent in that an SOI substrate having an SOI film in a range of about 10 μm to about 10 μm can be manufactured by the same manufacturing apparatus.

[0007] Further, the present applicant has disclosed in
In No. 9, after the first substrate and the second substrate are bonded to each other, the first substrate is separated from the second substrate without breaking, and then the separated surface of the first substrate is removed. A technique has been disclosed in which a porous layer is formed again after smoothing and reused. This technique has excellent advantages that the first substrate can be used without waste, so that the manufacturing cost can be greatly reduced and the manufacturing process is simple.

[0008]

In the above technique,
When a substrate in which two substrates are bonded to each other (hereinafter, a bonded substrate) is separated by a porous layer, it is desired to separate the substrates with good reproducibility without damaging the substrates.

The present invention has been made in view of the above background, and is suitable for, for example, preventing occurrence of defects when separating a sample such as a substrate having a separation layer therein. It is an object to provide an apparatus and a method.

[0010]

When a sample such as a substrate having a separation layer inside is separated, first, in a first stage, a part of the region is left as an unseparated region. Then, by applying a force to the unseparated region from a predetermined direction to completely separate the sample, it is possible to prevent a defect from occurring at the time of separating the sample.

The present invention is suitable for carrying out the first step, and the present invention makes the conditions of the separation in the second step uniform, thereby facilitating the control of the second step. To prevent the occurrence of defects when separating.

A processing apparatus according to a first aspect of the present invention is a processing apparatus for processing a sample having a separation layer therein, wherein a predetermined area of the separation layer is left as an unseparated area. And a separation mechanism for partially separating the sample with the separation layer.

[0013] In the processing apparatus according to the first aspect, for example, the separation mechanism has an ejection unit that ejects a fluid toward the separation layer, and partially separates the sample with the fluid. Is preferred.

In the processing apparatus according to the first aspect, for example, the sample is preferably a plate-like member having a layer having a fragile structure as the separation layer.

In the processing apparatus according to the first aspect, for example, the separation mechanism preferably partially separates the sample so as to leave a substantially circular area as the unseparated area.

In the processing apparatus according to the first aspect, for example, the separation mechanism removes the sample by leaving a substantially circular region as the unseparated region in a substantially central portion of the separation layer. Partial separation is preferred.

In the processing apparatus according to the first aspect, for example, the separation mechanism includes a drive mechanism for rotating the sample about an axis orthogonal to the separation layer, and a drive mechanism for rotating the sample toward the separation layer. And a jetting unit for jetting fluid.
It is preferable to execute a partial separation process on the sample while rotating the sample by the driving mechanism.

In the processing apparatus according to the first aspect, for example, the driving mechanism rotates the sample at a low speed in an initial stage of the partial separation of the sample, and then rotates the sample at a high speed. Preferably.

In the processing apparatus according to the first aspect, for example, the driving mechanism may increase the rotation speed of the sample gradually or stepwise during the partial separation of the sample. Is preferred.

In the processing apparatus according to the first aspect, it is preferable that, for example, the drive mechanism changes a rotation speed of the sample during a partial separation process of the sample.

In the processing apparatus according to the first aspect, for example, the jetting unit jets a high-pressure fluid at an initial stage of the partial separation process of the sample, and thereafter lowers the fluid pressure. Is preferred.

In the processing apparatus according to the first aspect, for example, the injection unit may gradually or stepwise reduce the pressure of the injected fluid during the partial separation of the sample. preferable.

In the processing apparatus according to the first aspect, for example, it is preferable that the injection unit changes the pressure of the fluid to be injected during the partial separation of the sample.

In the processing apparatus according to the first aspect, for example, the injection unit may be separated from the center of the separation layer by a predetermined distance in a plane direction during a partial separation process of the sample. Preferably, the fluid is ejected toward the location.

In the processing apparatus according to the first aspect, for example, it is preferable that the unseparated region is smaller than a region where the separation layer is separated.

In the processing apparatus according to the first aspect, for example, the sample may be a first sample having a fragile layer therein.
And the second plate-shaped member are preferably bonded to each other.

In the processing apparatus according to the first aspect, for example, the fragile layer is preferably a porous layer. .

In the processing apparatus according to the first aspect, for example, the first plate member is a semiconductor substrate.

[0029] In the processing apparatus according to the first aspect, for example, the first plate-shaped member forms a porous layer on one surface of a semiconductor substrate and forms a non-porous layer on the porous layer. Do it.

In the processing apparatus according to the first aspect, for example, the non-porous layer includes a single-crystal semiconductor layer.

A processing apparatus according to a second aspect of the present invention is a processing method for processing a sample having a separation layer therein, wherein a predetermined area of the separation layer is left as an unseparated area. The sample is partially separated by the separation layer.

In the processing method according to the second aspect, it is preferable that the sample is partially separated by, for example, jetting a fluid toward the separation layer.

In the processing method according to the second aspect, for example, the sample is preferably a plate-shaped member having a layer having a fragile structure as the separation layer.

In the processing method according to the second aspect, for example, it is preferable that the sample is partially separated so as to leave a substantially circular region as the unseparated region.

In the processing method according to the second aspect, for example, the sample is partially separated by leaving a substantially circular region as the unseparated region in a substantially central portion of the separation layer. Is preferred.

In the processing method according to the second aspect, for example, by injecting a fluid toward the separation layer while rotating the sample around an axis orthogonal to the separation layer, Preferably, the sample is partially separated.

In the processing method according to the second aspect, for example, it is preferable that the sample is rotated at a low speed in an initial stage of the partial separation process of the sample, and then the sample is rotated at a high speed.

[0038] In the processing method according to the second aspect, for example, it is preferable to gradually or stepwise increase the rotation speed of the sample during the partial separation of the sample.

In the processing method according to the second aspect, for example, it is preferable to change the rotation speed of the sample during the partial separation of the sample.

[0040] In the processing method according to the second aspect, for example, it is preferable to use a high-pressure fluid in the initial stage of the partial separation of the sample, and then use a low-pressure fluid.

In the processing method according to the second aspect, it is preferable that the pressure of the fluid to be separated is gradually or stepwise reduced, for example, when the sample is partially separated.

In the processing method according to the second aspect, for example, it is preferable to change the pressure of the fluid to be separated when the sample is partially separated.

In the processing method according to the second aspect, for example, when the sample is partially separated, the fluid may be directed toward a position away from the center of the separation layer by a predetermined distance in the plane direction. Is preferably injected.

In the processing method according to the second aspect, for example, it is preferable that the unseparated region is smaller than a region where the separation layer is separated.

[0045] In the processing method according to the second aspect, for example, the sample may include a first material having a fragile layer therein.
And the second plate-shaped member are preferably bonded to each other.

In the processing method according to the second aspect, for example, the fragile layer is preferably a porous layer.

In the processing method according to the second aspect, for example, the first plate member is a semiconductor substrate.

[0048] In the processing method according to the second aspect, for example, the first plate-like member forms a porous layer on one side of a semiconductor substrate and forms a non-porous layer on the porous layer. Do it.

In the processing method according to the second aspect, for example, the non-porous layer includes a single-crystal semiconductor layer.

[0050]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a view for explaining a method of manufacturing an SOI substrate according to a preferred embodiment of the present invention in the order of steps.

In the step shown in FIG. 1A, a single crystal Si substrate 11 is prepared, and a porous Si layer 12 is formed on the surface thereof by anodization or the like. Next, in a step shown in FIG. 1B, a non-porous single-crystal Si layer 13 is formed on the porous Si layer 12.
Is formed by an epitaxial growth method. This allows
A first substrate () is formed.

In the step shown in FIG. 1C, first, an insulating layer (for example, an SiO ₂ layer) 1 is formed on the surface of the single crystal Si substrate 14.
5 is prepared, and the first substrate () and the second substrate () are separated at room temperature such that the non-porous single-crystal Si layer 13 and the insulating layer 15 face each other. Adhere.
After that, the first substrate () and the second substrate () are bonded to each other by anodic bonding, pressing, heat treatment, or a combination thereof. By this processing, the non-porous single-crystal Si layer 13 and the insulating layer 15 are firmly bonded. The insulating layer 15 may be formed on the single-crystal Si substrate 14 side as described above, may be formed on the non-porous single-crystal Si layer 13, or may be formed on both. It is sufficient that the state shown in FIG. 1C is obtained when the first substrate and the second substrate are brought into close contact with each other.

In the step shown in FIG. 1D, the two bonded substrates are separated at the porous Si layer 12. Thereby, the second substrate side ("+") has a laminated structure of the porous Si layer 12 "/ the single-crystal Si layer 13 / the insulating layer 15 / the single-crystal Si substrate 14. On the other hand, on the first substrate side (')
Has a structure having a porous Si layer 12 ′ on a single-crystal Si substrate 11.

The substrate (') after the separation is used to form the first substrate () again by removing the remaining porous Si layer 12' and, if necessary, flattening the surface. Used as a single crystal Si substrate 11.

After separating the bonded substrates, FIG.
In the step shown in (e), the porous layer 12 '' on the surface of the second substrate side ("+") is selectively removed. This allows
A substrate having a stacked structure of single crystal Si layer 13 / insulating layer 15 / single crystal Si substrate 14, that is, a substrate having an SOI structure is obtained.

In this embodiment, in the step shown in FIG. 1D, that is, at least a part of the step of separating the bonded substrate, the porous Si as a separating layer is used.
A separation apparatus is used in which a liquid or a gas (fluid) is jetted toward the layer to separate the bonded substrates into two at the separation layer.

[Basic Configuration of Separation Apparatus]
The water jet method was applied. In general,
In the water jet method, water (abrasive material is added when cutting hard material) is jetted at high speed and high pressure in a bundle to the object, and ceramics, metal, concrete, resin, rubber, This is a method of cutting and processing wood and the like, removing a coating film on the surface, cleaning the surface, and the like (see Water Jet Vol. 1, No. 1, page 4). Conventionally, the water jet method has been used for cutting, processing, removing a coating film, and cleaning the surface as described above by mainly removing a part of the material.

In this separation apparatus, a fluid is ejected in a bundled flow toward a porous layer (separation layer) of a bonded substrate, which is a fragile structure, and the porous layer is selectively collapsed. By doing so, the substrate is separated at the portion of the porous layer. Hereinafter, this bundled flow is referred to as a “jet”. Further, the fluid constituting the jet is referred to as “jet constituting medium”. Water, organic solvent such as alcohol, hydrofluoric acid, nitric acid and other acids, potassium hydroxide and other alkalis, air, nitrogen gas, carbon dioxide gas, rare gas, etching gas and other gases, plasma, etc. I can do it.

When this separation apparatus is applied to a manufacturing process of a semiconductor device, for example, a separation process of a bonded substrate, it is preferable to use pure water from which impurity metals, particles and the like have been removed as much as possible.

This separation device removes the porous layer from the outer peripheral portion toward the central portion by jetting a jet toward the porous layer exposed on the side surface of the bonded substrate. Accordingly, the bonded substrate is separated into two substrates without removing the porous layer having a weak mechanical strength without damaging the main body.

FIG. 2 is a diagram showing a schematic configuration of a separation apparatus according to a preferred embodiment of the present invention. This separation device 10
0 denotes substrate holding units 120 and 150 having a vacuum suction mechanism.
The substrate holding sections 120 and 150 hold the bonded substrate 101 so as to sandwich the bonded substrate 101 from both sides. The bonded substrate 101 has a porous layer 101b, which is a fragile component, inside the bonded substrate 101. The separation device 100 separates the two substrates 101a and 101c at the porous layer 101b.
Is separated into In the separation apparatus 100, for example, the substrate 101a is set so as to be on the first substrate side (') in FIG. 1 and the substrate 101c is set on the second substrate side ("+") in FIG.

The substrate holders 120 and 150 exist on the same rotation axis. The substrate holding unit 120 includes the bearing 10
The rotation shaft 104 is connected to one end of a rotation shaft 104 rotatably supported by a support table 109 via the shaft 8, and the other end of the rotation shaft 104 is connected to a rotation shaft of a motor 110. Therefore, the rotation force generated by the motor 110 causes the substrate holding unit 120 to rotate.
Then, the bonded substrate 101 vacuum-adsorbed to the substrate rotates. The motor 110 is controlled by the controller 190, and rotates the rotation shaft 104 at a rotation speed specified by the controller 190, or stops the rotation.

The substrate holding section 150 is connected to one end of a rotating shaft 103 slidably and rotatably supported by a supporting table 109 via a bearing 111, and the other end of the rotating shaft 103 is connected to the supporting table 109. Air cylinder 112 fixed to
It is connected to. The air cylinder 112 is driven by a cylinder driving unit 191 controlled by the controller 190. This air cylinder 112 is
By extruding 3, the bonded substrate 101 is pressed by the substrate holding unit 150. The sealing member 1 is mounted on the support table 109 so as to
13 is fixed. The seal member 113 is made of, for example, rubber or the like.
It prevents entry into the 11 side.

Each of the substrate supporting portions 120 and 150 is provided with one or a plurality of suction holes 181 and 182 as a vacuum suction mechanism. The suction holes 181 and 182 rotate through the rotation shafts 104 and 103, respectively. The seal portion 104a,
103a. Rotary seal parts 104a, 103
Vacuum lines 104b and 103b are connected to a, respectively. These vacuum lines 104b and 103b have
An electromagnetic valve for controlling the attachment / detachment of the bonded substrate 101 or the substrate after separation is attached. This solenoid valve
It is controlled by the controller 190.

Hereinafter, first, a basic separation process using the separation apparatus 100 and problems of the process will be described, and then, as a preferred embodiment of the present invention, an improved separation process will be described.

[Basic Separation Processing by Separation Apparatus] First, the rotary shaft 103 is housed in the air cylinder 112 to provide a corresponding distance between the suction surfaces of the substrate holders 120 and 150. Next, the substrate holding unit 120
The bonded substrate 101 is transported between the substrate and the substrate holding unit 150 by a transport robot or the like, and the center of the bonded substrate 101 is aligned with the center axes of the rotating shafts 104 and 103. Next, the controller 190 operates the air cylinder 112.
Then, the bonded substrate 101 is pressed and held by extruding the rotating shaft 103 (state shown in FIG. 2).

Next, the controller 190
10 is controlled to rotate the bonded substrate 101 at a constant rotation speed. Thereby, the rotating shaft 104, the substrate holding unit 120, the bonded substrate 101, the substrate holding unit 150, and the rotating shaft 103 rotate integrally.

Next, the controller 190 operates the pump 1
14 is controlled to feed a jet forming medium (for example, water) to the nozzle 102 and wait until the jet ejected from the nozzle 102 is stabilized. When the jet is stabilized, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 over the center of the bonded substrate 101,
The jet is inserted into the porous layer 101b of the bonded substrate 101.

When the jet is sandwiched, a separation force due to the pressure of the jet constituting medium continuously injected into the porous layer 101b, which is a fragile structure, acts on the bonded substrate 101. The porous layer 101b connecting 101a and 101c is destroyed. By this processing, the bonded substrate 101 can be completely separated in, for example, about several minutes.

When the bonded substrate 101 is separated into two substrates, the controller 190
Is controlled to move the nozzle 102 to the standby position, and then the operation of the pump 114 is stopped. Further, the controller 190 controls the motor 110 to stop the rotation of the bonded substrate 101, and controls the above-described solenoid valve to apply the separated substrates 101a and 101c to the substrate holding units 120 and 150, respectively. Adsorb.

Next, the controller 190 causes the rotation shaft 103 to be housed in the air cylinder 112. Thereby, the two physically separated substrates are separated from each other by breaking the surface tension of the jet constituting medium (for example, water).

According to the above-described separation processing, the bonded substrate 101 can be efficiently separated, and damage and contamination of the substrate are small. Therefore, this separation process is considered very promising for separating bonded substrates or other similar samples. However, problems to be solved remain as described below.

[Issues in Basic Separation Processing] FIG.
FIG. 4 is a diagram schematically showing defects 101d and 101e which may be generated by the above separation processing, that is, a processing of separating a bonded substrate into two substrates while rotating the bonded substrate at a constant speed. Such defects 101d and 101c are generated in a portion of the bonded substrate 101 which is separated at the final stage of the separation processing.

When the defects 101d and 101c are large, the layer adjacent to the porous layer (101b; 12 in FIG. 1) (for example, the single crystal Si layer 13 shown in FIG. 1) is damaged. The separated substrate cannot be used in the next step (for example, the step shown in FIG. 1E).

The causes of such defects 101d and 101e are considered to be roughly as follows. In the separation processing of the bonded substrate, first, the substrate holding unit 150 (the air cylinder 112)
Secondly, a force (separation force) that expands the bonded substrate 101 by the jet constituent medium injected into the gap generated by the separation of the bonded substrate 101 acts in a direction sandwiching the bonded substrate 101. And third,
Porous layer 1 in unseparated region of bonded substrate 101
01 binding force (drag force against separation force) acts.

Here, the pressing force of the air cylinder 112 is maintained substantially constant. On the other hand, it is considered that the separating force increases rapidly with the expansion of the separated region of the bonded substrate. In addition, the coupling force naturally decreases as the unseparated area is reduced.

Therefore, at the stage of separating the outer peripheral portion of the bonded substrate, the relationship of (coupling force) + (pressing force) >> (separation force) is maintained, and an excessive separation force is applied to the bonded substrate. It is not considered to act.

However, as the separation proceeds, the (coupling force) +
When the relationship of (pressing force) <(separation force) is established, the substrate holding unit 150 starts to retreat, so that the separation force acts more efficiently on the bonded substrate, and the progress of separation is accelerated. Then, in the final stage of the separation process, the (coupling force) + (pressing force) <
<(Separation force), and it is considered that this excessive separation force acts on substantially the entire unseparated region. At this time, the final separation of the bonded substrate 101 is not mainly the impact of the jet, but mainly the separating force, that is, the jet constituent medium injected into the gap generated by the separation of the bonded substrate expands the bonded substrate. It is considered that this occurs when the entire unseparated region is peeled off at once by the force.

Hereinafter, an improved separation process for reducing the occurrence of defects due to the separation process will be described.

[Improved Separation Processing] As a result of experiments, the present inventor has found that the occurrence of the above defects can be reduced by the following method.

That is, in the first step, the porous layer 101
The bonded substrate 101 is partially separated such that the predetermined region b is left as an unseparated region. Here, the unseparated region is preferably substantially circular, and its position is preferably substantially at the center of the bonded substrate 101.

Next, in the second step, the bonded substrate 101 is completely separated by applying a force to the unseparated region not from the entire circumference but from a predetermined direction. As described above, by applying a force to the unseparated region from a predetermined direction, a strong separating force is applied to a part of the periphery of the unseparated region, and a weak separating force is applied to the other part. The separation region can be gradually enlarged while acting. Therefore, as compared with the case where the unseparated regions are collectively separated, the occurrence of defects in the separated substrates is effectively prevented.

Hereinafter, a preferred embodiment of the improved separation processing will be described.

(First Embodiment) In this embodiment, first, in a first step, the nozzle 102 is positioned on the center of the bonded substrate 101 and the motor 110 rotates the bonded substrate 101 ( For example, 8r
pm), the peripheral portion of the bonded substrate 101 is separated, and the central portion is left as an unseparated region. Here, the bonded substrate 1
The reason why the separation process is performed while rotating 01 is to make the shape and position of the unseparated region 202 remaining after the first step uniform for many bonded substrates. Thus, in the second step, the bonded substrates 101 can be processed under substantially the same conditions.

FIG. 4 is a diagram schematically showing a state in which the bonded substrate 101 is partially separated by the first step of this embodiment. In the figure, reference numeral 201 denotes a boundary between the separated region and the non-separated region during the progress of the first step, and the region outside the boundary 201 has already been separated, and the region inside the boundary 201 has not been separated yet. It is. In the first step of this embodiment, since the separation process proceeds while rotating the bonded substrate 101, the trajectory of the boundary 201 becomes spiral. The area 202 not shaded is
This is an unseparated area remaining after the execution of the first step, the shape is substantially circular, and the position is substantially the center of the bonded substrate 101. The hatched region 203 is the first region.
This is a region (separation region) separated by the execution of the process.
The unseparated area 202 is preferably smaller than the separated area 203.

As described above, by performing the first step while rotating the bonded substrate 101, a target region, for example, a central portion of the bonded substrate 101 can be left as an unseparated region 202. The second step can be performed on each bonded substrate 101 under substantially the same conditions.

Next, in the second step, the rotation speed of the bonded substrate 101 is lowered to substantially stop the rotation (for example, 2 rpm or less), or the rotation of the bonded substrate 101 is completely stopped. In this state, the unseparated area 202 is separated. Thus, a force can be applied to the unseparated area 202 from a predetermined direction. Here, it is most preferable that the rotation of the bonded substrate 101 be completely stopped.

FIG. 5 is a diagram schematically showing a state in which the bonded substrate 101 is completely separated by the second step of this embodiment. In the figure, reference numeral 204 denotes a boundary between the separated area and the unseparated area during the execution of the second step.
This boundary 204 moves as shown by the arrow.

As described above, the bonded substrate 101 is kept in a state where the rotation speed of the bonded substrate 101 is substantially stopped.
The non-separated area 2
02 can be applied from a predetermined direction. As a result, a strong separation force can be applied to a part of the periphery of the unseparated region 202 and a weak separation force can be applied to the other parts to gradually enlarge the separation region. Defects are prevented from being generated in each of the substrates.

FIG. 6 is a flowchart schematically showing a control procedure of the separation apparatus 100 in this embodiment. Note that the processing shown in this flowchart is controlled by the controller 190. The processing shown in this flowchart is performed when the bonded substrate 101
0, that is, the substrate holders 120 and 150
This is executed after the bonded substrate 101 is held by the method.

Steps S101 to S104 correspond to a first step. First, the controller 190 controls the motor 11
0 is controlled to rotate the bonded substrate 101 at a predetermined rotation speed (S101). The rotation speed at this time is preferably, for example, about 4 to 12 rpm, and 6 to 1 rpm.
More preferably, it is about 0 rpm. In this embodiment, the rotation speed is set to 8 rpm.

Next, the controller 190 operates the pump 1
14 is controlled to a predetermined pressure (for example, 500 kgf /
A square cm) jet is ejected from the nozzle 102 (S102). Next, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 from the standby position (the position where the jet does not collide with the bonded substrate 101) onto the porous layer 101b on the central axis of the bonded substrate 101. (S103). Thus, partial separation of the bonded substrate 101 is started. After that, the controller 190 waits until the area other than the area to be left as the unseparated area 202 is separated (for example, after a predetermined time has elapsed), and then controls the nozzle driving unit 106 to control the nozzle 102
Is moved to the standby position (S104). This makes the first
The process is completed.

Steps S105 to S107 correspond to a second step. First, the controller 190 controls the motor 11
By controlling 0, the rotation of the bonded substrate 101 is substantially stopped (S105). Next, the controller 190
Controls the nozzle driving unit 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S106). Thus, separation of the unseparated region 202 of the bonded substrate 101 is started. After that, the controller 190 controls the nozzle driving unit 106 after waiting for the bonded substrate 101 to be completely separated (for example, after a predetermined time has elapsed).
The nozzle 102 is moved to the standby position, and the pump 114 is controlled to stop jetting (S107). This completes the second step.

(Second Embodiment) This embodiment is different from the first embodiment in that
The present invention relates to a method for better controlling the shape and position of an unseparated region left after the first step. In the first step of this embodiment, the nozzle 102 is positioned above the center of the bonded substrate 101, and the peripheral portion of the bonded substrate 101 is separated while rotating the bonded substrate 101 by the motor 110.
This is the same as the first step of the first embodiment in that the central part is left as an unseparated area.

However, in the first step of this embodiment, the rotation speed of the bonded substrate 101 is increased gradually or stepwise (including two steps) while the rotation speed of the bonded substrate 101 is increased.
1 in that it is partially separated from the first step of the first embodiment. For example, after the separation is started, it is preferable to rotate the bonded substrate 101 at a low speed until the bonded substrate 101 makes about one rotation (first stage), and then increase the rotation speed (second stage).

Here, the rotation speed of the bonded substrate 101 in the first stage is preferably, for example, about 4 to 12 rpm, and more preferably about 6 to 10 rpm. In this embodiment, the rotation speed is set to 8 rpm. Further, the rotation speed of the bonded substrate 101 in the second stage is, for example, preferably about 25 to 35 rpm, and more preferably about 28 to 32 rpm. In this embodiment, the rotation speed is 30 rpm.

As described above, the reason why the bonded substrate 101 is rotated at a low speed in the initial stage of the first process is as follows.
This is because the separation force does not easily act on the bonded substrate 101 efficiently. Further, the reason why the first step is advanced while gradually or stepwise increasing the rotation speed is that rotating the bonded substrate 101 at a high speed can leave an unseparated region having a shape closer to point symmetry. Because.

FIG. 7 is a diagram schematically showing a state in which the bonded substrate is partially separated in the first step of this embodiment. The example shown in FIG. 7 is an example in which the bonded substrate 101 is rotated at about 8 rpm until it makes one rotation, and then the rotation speed is set to about 30 rpm.

Note that the second step of this embodiment is the first step.
This is the same as the embodiment. FIG. 8 is a diagram schematically showing a state in which the bonded substrate 101 is completely separated by the second step of this embodiment.

As described above, in the first step, by gradually or stepwise increasing the rotation speed of the bonded substrate 101, the unseparated regions 20 remaining after the first step is completed.
2 can be made closer to a circular shape, and its position can be made to match the center of the bonded substrate 101 more. This is because each bonded substrate 101
Means that the shape of the unseparated region 202 can be made more uniform. Therefore, as compared with the first embodiment, defects which may occur in the second step can be reduced.

FIG. 9 is a flowchart schematically showing a control procedure of the separation apparatus 100 in this embodiment. Note that the processing shown in this flowchart is controlled by the controller 190. The processing shown in this flowchart is performed when the bonded substrate 101
Executed after being set to zero.

Steps S201 to S205 correspond to a first step. First, the controller 190 controls the motor 11
0 is controlled to rotate the bonded substrate 101 at a low speed (S201). The rotation speed at this time is, for example, 4 to 12
The rotation speed is preferably about rpm, and more preferably about 6 to 10 rpm. In this embodiment, the rotation speed is set to 8 rpm.

Next, the controller 190 operates the pump 1
14 is controlled to a predetermined pressure (for example, 500 kgf /
(Square cm) is jetted from the nozzle 102 (S202). Next, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S203). Thus, partial separation of the bonded substrate 101 is started.

Thereafter, the controller 190 waits for the bonded substrate 101 to make one rotation, for example, and then controls the motor 110 to increase the rotation speed of the bonded substrate 101 (S204). The rotation speed at this time is preferably, for example, about 25 to 35 rpm.
More preferably, it is about 32 rpm. In this embodiment, the rotation speed is 30 rpm.

After that, the controller 190 waits until the area other than the area to be left as the unseparated area 202 is separated (for example, after a predetermined time has elapsed), and then the nozzle driving unit 10
6, the nozzle 102 is moved to the standby position (S205). Thereby, the first step is completed.

Steps S206 to S208 correspond to the second step. First, the controller 190 controls the motor 11
0, the rotation of the bonded substrate 101 is substantially stopped (S206). Next, the controller 190
Controls the nozzle driving unit 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S207). Thus, separation of the unseparated region 202 of the bonded substrate 101 is started.

Then, after waiting for the bonded substrate 101 to be completely separated (for example, after a predetermined time has elapsed), the controller 190 controls the nozzle driver 106 to move the nozzle 102 to the standby position. Let pump 1
14 to stop jetting (S20).
8). This completes the second step.

(Third Embodiment) In this embodiment,
The present invention relates to a method for better controlling the shape and position of an unseparated region left after the first step. In the first step of this embodiment, the nozzle 102 is positioned above the center of the bonded substrate 101, and the peripheral portion of the bonded substrate 101 is separated while rotating the bonded substrate 101 by the motor 110.
This is the same as the first step of the first embodiment in that the central part is left as an unseparated area. However, the first step of this embodiment is to reduce the pressure of the jet gradually or stepwise (including two steps),
1 in that it is partially separated from the first step of the first embodiment. For example, after the separation is started, the pressure of the jet is set to a high pressure (for example, about 500 kgf / square cm) until the bonded substrate 101 makes about one rotation,
Thereafter, it is preferable to set the pressure of the jet to a pressure (for example, about 220 kgf / square cm) at which the central part left as an unseparated area is not separated.

As described above, the jet pressure is set to a high pressure in the initial stage of the first process because the separation force does not effectively act on the bonded substrate 101 in the initial stage. Further, the reason why the first step is advanced while the pressure of the jet is gradually or gradually reduced is that lowering the pressure of the jet can leave an unseparated region having a shape closer to point symmetry. is there.

FIG. 10 is a diagram schematically showing a state in which the bonded substrate is partially separated by the first step of this embodiment. The example shown in FIG.
The jet pressure is 500kgf until 1 rotates about 1 revolution
/ Square cm and then the jet pressure is set to 220
This is an example in the case of setting kgf / square cm.

Note that the second step of this embodiment is the first step.
This is the same as the embodiment. The state of separation of the bonded substrate 101 in the second step is substantially the same as the example shown in FIG.

As described above, in the first step, by gradually or stepwise reducing the jet pressure, the shape of the unseparated region 202 remaining after the completion of the first step can be made more nearly circular. In addition to this, the position can be made to more closely match the center of the bonded substrate. This is because the unseparated area 20 for each bonded substrate 101
This means that the shape of No. 2 can be made more uniform. Therefore, as compared with the first embodiment, defects which may occur in the second step can be reduced.

FIG. 11 is a flowchart schematically showing a control procedure of the separation apparatus 100 in this embodiment. Note that the processing shown in this flowchart is executed after the bonded substrate 101 is set in the separation device 100.

Steps S301 to S305 correspond to a first step. First, the controller 19 controls the motor 110
To rotate the bonded substrate 101 at a predetermined speed (S301). The rotation speed at this time is, for example, 4-1.
It is preferably about 2 rpm, and more preferably about 6 to 10 rpm. In this embodiment, the rotation speed is set to 8 rpm.

Next, the controller 190 operates the pump 1
14 is controlled to a high pressure (for example, 500 kgf / square c).
m) is jetted from the nozzle 102 (S20).
2). Next, the controller 190 controls the nozzle driving unit 1
06 is controlled to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S303). Thereby, the bonded substrate 101
Is started. Then, the controller 1
90 waits for the bonded substrate 101 to make one rotation, for example, and then controls the pump 114 to set the jet pressure to a low pressure (for example, 220 kgf / square cm).

After that, the controller 190 waits until the area other than the area to be left as the unseparated area 202 is separated (for example, after a predetermined time has elapsed), and then the nozzle driving unit 10
6, the nozzle 102 is moved to the standby position (S305). Thereby, the first step is completed.

Steps S306 to S309 correspond to the second step. First, the controller 190 controls the motor 1
10 is controlled to substantially stop the rotation of the bonded substrate 101 (S306). Next, the controller 190
Controls the pump 114 to increase the pressure of the jet to a pressure (for example, 500 kgf / square cm) at which the unseparated region 202 can be separated (S307).

Next, the controller 190 controls the nozzle driving section 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S308). Thus, separation of the unseparated region 202 of the bonded substrate 101 is started. Thereafter, after waiting for the bonded substrate 101 to be completely separated (for example, after a predetermined time has elapsed), the controller 190 controls the nozzle driving unit 106 to
2 is moved to the standby position, and the pump 114 is controlled to stop jetting (S309). This completes the second step.

Incidentally, it is also effective to combine the second embodiment and the third embodiment. That is, in an initial stage of separation (for example, the first rotation) in the first step,
Separation is performed by a high-pressure jet while rotating the bonded substrate 101 at a low speed.
While gradually or stepwise increasing the rotation speed of 1,
By performing the separation while gradually or stepwise reducing the pressure of the jet, the unseparated region 202 left after the first step can be made more uniform.

(Fourth Embodiment) This embodiment also has
The present invention relates to a method for better controlling the shape and position of an unseparated region left after the first step. In the first step of this embodiment, the nozzle 102 is arranged at a position shifted from the center of the bonded substrate 101 by a predetermined distance (for example, 20 to 30 mm in a direction perpendicular to the jetting direction of the jet). While rotating the bonded substrate 101 (for example, at 8 rpm), the peripheral portion of the bonded substrate 101 is separated, and the central portion is left as an unseparated region. As described above, the reason why the jet is jetted toward the position deviated from the center of the bonded substrate 101 is that the shape and position of the unseparated region 202 remaining after the first step are changed to the number of the bonded substrates 1.
This is to make the 01 more uniform.

FIG. 12 is a diagram schematically showing a state in which the bonded substrate is partially separated in the first step of this embodiment. In the figure, reference numeral 201 denotes an area where the outside of the boundary 201 has already been separated, indicating the boundary between the separated area and the unseparated area during the execution of the first step.
The inside of 1 is an area that has not yet been separated. In the first step of this embodiment, since the separation process proceeds while rotating the bonded substrate 101, the trajectory of the boundary 201 becomes spiral. The region 202 not shaded is an unseparated region remaining after the execution of the first step, and has a shape closer to a circle than that of the first embodiment, and its center is the center of the bonded substrate 101. Close to. The hatched area 203 is an area separated by the execution of the first step. As described above, the shape of the unseparated region 202 can be made closer to point symmetry as compared with the first embodiment, as compared with the first embodiment as the first process approaches the end stage. It is considered that the separation force acting on the porous layer is weakened.

Note that the second step of this embodiment is the first step.
This is the same as the embodiment. FIG. 13 is a diagram schematically showing a state in which the bonded substrate 101 is completely separated by the second step.

FIG. 14 is a flowchart schematically showing a control procedure of the separating apparatus 100 in this embodiment. Note that the processing shown in this flowchart is controlled by the controller 190. The processing shown in this flowchart is performed when the bonded substrate 101
0, that is, the substrate holders 120 and 150
This is executed after the bonded substrate 101 is held by the method.

Steps S401 to S404 correspond to a first step. First, the controller 190 controls the motor 11
By controlling 0, the bonded substrate 101 is rotated at a predetermined rotation speed (for example, 8 rpm) (S401). Next, the controller 190 controls the pump 114 to
A jet having a predetermined pressure (for example, 500 kgf / square cm) is jetted from the nozzle 102 (S402). Next, the controller 190 controls the nozzle driver 106 to move the nozzle 102 from the standby position to the bonded substrate 10.
A predetermined distance (for example, 20 to
It is moved on the porous layer 101b above the position shifted by 30 mm) (S403). Thereby, the bonded substrate 10
Partial separation of 1 is started. After that, the controller 190 waits until an area other than the area to be left as the unseparated area 202 is separated (for example, after a predetermined time has elapsed), and then controls the nozzle driving unit 106 to move the nozzle 102 to the standby position. (S404). Thereby, the first step is completed.

Steps S405 to S407 correspond to the second step. First, the controller 190 controls the motor 11
By controlling 0, the rotation of the bonded substrate 101 is substantially stopped (S405). Next, the controller 190
Controls the nozzle driving unit 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S406). Thus, separation of the unseparated region 202 of the bonded substrate 101 is started. After that, the controller 190 controls the nozzle driving unit 106 after waiting for the bonded substrate 101 to be completely separated (for example, after a predetermined time has elapsed).
The nozzle 102 is moved to the standby position, and the pump 114 is controlled to stop jetting (S407). This completes the second step.

In the first to fourth embodiments, the execution of the second step may be started without returning the nozzle 102 to the standby position at the end of the first step.

(Fifth Embodiment) This embodiment is a modification of the fifth embodiment.
The second step relates to a method of using a wedge instead of a fluid. Note that the first step is preferably the first step in any of the first to fourth embodiments.

FIGS. 15 and 16 are diagrams schematically showing the structure of a separation apparatus suitable for the second step (hereinafter, referred to as a final separation apparatus). The final separation device 350 has first and second support portions 353 and 356 that support a predetermined position of the bonded substrate 101 that has undergone the first step. The supporting position is preferably, for example, a part of the peripheral portion.

The first support 353 is fixed to the stage 354, and the second support 356 is fixed to the tip of the piston of the cylinder 355 fixed to the stage 354. The bonded substrate 10 is attached to the final separation device 350.
When setting 1, the first support portion 353 and the second support portion 356 are accommodated by housing the piston in the cylinder 355.
Is provided between the cylinder 355 and the piston 35 after inserting the bonded substrate 101 into the gap.
By extruding 5, the bonded substrate 101 is pressed and held from above by the second support portion 356.

The first support 354 and / or the second support 3
It is preferable to provide an elastic member made of, for example, rubber or the like at a portion where 56 contacts the bonded substrate 101. This is to facilitate separation of the bonded substrate 101 and to avoid applying excessive stress to a portion supported by the first support portion 353 and the second support portion 356 during separation. . In the illustrated example, the second support 35
6 is an example in which an elastic body 357 is provided.

The final separating device 350 has a wedge 351 for applying a force to the bonded substrate 101 from a predetermined direction. The wedge 351 is slid by the cylinder 352. Specifically, when the bonded substrate 101 is separated, the wedge 351 is pushed out from the cylinder 352 and the tip of the wedge 351 is inserted into the gap of the bonded substrate 101 as shown in FIG. As a result, a strong separation force can be applied to a part of the unseparated region of the bonded substrate 101, and the separation region can be gradually enlarged while a weak separation force is applied to the other part. Defects are effectively prevented from occurring in each of the substrates.

FIG. 17 is a diagram schematically showing a flow of a separation process using the separation device 100 and the final separation device 350. First, the bonded substrate 101 is set in the separation apparatus 100 (S501), and a predetermined area is left as an unseparated area by, for example, the same method as the first step according to any of the first to fourth embodiments. Then, the bonded substrate 101 is partially separated (S502). Then
The bonded substrate 101 having undergone the first step is set to a final separation layer value of 3
50 (S503), and the bonded substrate 10
1 are completely separated by a wedge (S504).

FIG. 18 is a plan view schematically showing an automatic separating apparatus incorporating the separating apparatus 100 and the final separating apparatus 350. The automatic separation device 300 includes a separation device 100 shown in FIG. 2 and a final separation device 3 shown in FIGS.
50, a substrate transfer robot 340, a loader 333,
A first unloader 332, a second unloader 331, a centering device 370, and an air blow device 361 are provided.

The separation device 100 is disposed in the chamber 310 in order to prevent the jet medium (eg, water) from scattering. The bonded substrate 10 is placed in the chamber 310 before and after the execution of the first step.
A shutter 320 is provided to take in and out of the shutter.

Prior to the separation process, a carrier 336 containing the unprocessed bonded substrate 101 is placed on the loader 333, and the separated substrate is placed on the first and second unloaders 332 and 331. Empty carriers 335 and 334 for accommodation are placed respectively.

The centering device 370 pushes out the guide member 371 having an arc-shaped surface conforming to the shape of the bonded substrate 101 by the cylinder 372, and places the bonded substrate between the guide member 371 and the guide member 373. 10
By sandwiching 1, centering of the bonded substrate 101 is performed. In this embodiment, the centering device 370 and the final separating device 370 are integrated, and after performing the centering of the bonded substrate 101 after the first step, a part of the bonded substrate 101 is held as it is. Thus, final separation can be performed by the wedge 351. In FIG. 18, the second support member 356 and the like shown in FIGS. 15 and 16 are omitted.

The substrate transfer robot 340 holds the bonded substrate 101 or the separated substrates by the robot hand 341 and transfers the substrates to the respective devices or carriers. The robot hand 341 has a function of verticalizing or flipping the held substrate.

FIG. 19 is a flowchart schematically showing a separation process by the automatic separation device 300. The processing shown in this flowchart is controlled by a controller (not shown). In addition, this processing is performed by loading the carrier 33 containing the unprocessed bonded substrate 101 on the loader 333.
6 is placed thereon, and the first and second unloaders 332 and 33
1, an empty carrier 3 for accommodating the separated substrate.
This is executed after 35 and 334 are respectively mounted.

First, the transfer robot 340 controls the loader 3
The bonded substrate 101 is taken out of the carrier 336 on 33, and the bonded substrate 101 is centered by the centering device 370 (S601). Next, the shutter 320 is opened (S602), and the robot hand 34 is opened.
By rotating 1 by 90 degrees, the surface of the bonded substrate 101 on which the centering has been completed is made vertical, and set on the separation device 100 (S603).

Next, the shutter 320 is closed (S6).
04), jetting of the jet is started (S605), and the nozzle 102 is moved from the standby position 311 to the center of the bonded substrate 101 along the movement path 312 to start the separation process in the first step (S606). Note that, as the separation process of the first step, the first step according to any of the first to fourth embodiments is preferable.

After the predetermined time has elapsed and the separation process in which the predetermined region is left as an unseparated region is completed, the nozzle 102 is returned to the standby position 311 along the movement path 312 (S60).
7) The jet injection is stopped (S608).

Next, the shutter 320 is opened (S6).
09), the bonded substrate 101 is received from the separation device 100 by the robot hand 341 and rotated 90 degrees to be horizontalized and delivered to the final separation device 350 (centering device 370) (S610), and the shutter 320 is closed (S610). S611).

Next, the bonded substrate 101 is centered by the centering device 370, and is held as it is by the first and second support members 353 and 356 (see FIGS. 15 and 16) (S612). Next, the wedge 351 is inserted into the gap between the bonded substrates 101 to completely separate the substrates (S613), and each substrate, the final separation device 350 and the centering device 370 are separated by the air blow device 361.
The dust and the like generated at the time of the separation are removed (S614).

Next, the separated upper substrate 101c is turned upside down (rotated 180 degrees) by the robot hand 341 and stored in the carrier 335 on the unloader 332 (S615). Further, the separated lower substrate 101a is stored in the carrier 334 on the unloader 331 by the robot hand 341 (S616).

By the above processing, one bonded substrate 1
01 is completed. Unprocessed bonded substrate 101
If is left, the above process may be repeated.

[0147]

According to the present invention, it is possible to provide an apparatus and a method suitable for preventing a defect from occurring when a sample such as a substrate having a separation layer therein is separated. it can.

[0148]

[Brief description of the drawings]

FIG. 1 is a view illustrating a method of manufacturing an SOI substrate according to a preferred embodiment of the present invention in the order of steps.

FIG. 2 is a diagram showing a schematic configuration of a separation device according to a preferred embodiment of the present invention.

FIG. 3 is a view showing a state where the bonded substrate is rotated at a constant speed.
It is a figure which shows typically the defect which may arise by the process isolate | separated into one board | substrate.

FIG. 4 is a diagram schematically showing a state in which a bonded substrate is partially separated by a first step of the first embodiment.

FIG. 5 is a diagram schematically showing a state in which a bonded substrate is completely separated by a second step of the first embodiment.

FIG. 6 is a flowchart schematically showing a control procedure of the separation device according to the first embodiment.

FIG. 7 is a diagram schematically showing a state in which a bonded substrate is partially separated by a first step of the second embodiment.

FIG. 8 is a diagram schematically showing a state in which a bonded substrate is completely separated by a second step of the second embodiment.

FIG. 9 is a flowchart schematically illustrating a control procedure of the separation device according to the second embodiment.

FIG. 10 is a diagram schematically showing a state in which a bonded substrate is partially separated by a first step of the third embodiment.

FIG. 11 is a flowchart schematically showing a control procedure of the separation device according to the third embodiment.

FIG. 12 is a diagram schematically showing a state in which a bonded substrate is partially separated by a first step of a fourth embodiment.

FIG. 13 is a view schematically showing a state in which a bonded substrate 101 is completely separated by a second step of the fourth embodiment.

FIG. 14 is a flowchart schematically showing a control procedure of the separation device according to the fourth embodiment.

FIG. 15 is a diagram schematically showing a configuration of a final separation device according to a fifth embodiment.

FIG. 16 is a diagram schematically showing a configuration of a final separation device according to a fifth embodiment.

FIG. 17 is a diagram schematically showing a flow of a separation process using a separation device for the first step and a final separation device for the second step.

FIG. 18 is a plan view schematically showing an automatic separation device incorporating a separation device for the first step and a final separation device for the second step.

FIG. 19 is a flowchart schematically showing a separation process by the automatic separation device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Single-crystal Si substrate 12 Porous Si layer 13 Non-porous single-crystal Si layer 14 Single-crystal Si substrate 15 Insulating layer 100 Separator 101 Bonded substrate 101b Porous layer 101d, 101e Defect 103, 104 Rotation axis 108, 111 Bearing 109 Support stand 110 Motor 112 Air cylinder 113 Seal member 120, 150 Substrate holding part 181, 182 Suction hole 104a, 103a Rotary seal part 104b, 103b Vacuum line 190 Controller 191 Cylinder driving part 201 Locus 202 between separated area and unseparated area Unseparated area 203 Separated area 204 Trajectory between separated area and unseparated area 300 Automatic separation device 310 Chamber 311 Standby position 312 Moving path 320 Shutter 331,332 Unloader 333 Loader 334-33 6 Carrier 340 Transfer robot 341 Robot hand 350 Final separator 351 Wedge 352 Cylinder 353 First support 354 Stage 355 Cylinder 356 Second support 357 Elastic member 361 Air blow device 370 Centering device 371, 373 Guide member

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Kazuaki Omi 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Takao Yonehara 3-30-2 Shimomaruko, Ota-ku, Tokyo Non Corporation

Claims (38)

[Claims] 1. A processing apparatus for processing a sample having a layer for separation therein, wherein a predetermined region of the layer for separation is left as an unseparated region, and the sample is separated by the layer for separation. A processing apparatus, comprising: a separation mechanism for partially separating. 2. The process according to claim 1, wherein the separation mechanism has an ejection unit for ejecting a fluid toward the separation layer, and partially separates the sample by the fluid. apparatus. 3. The processing apparatus according to claim 1, wherein the sample is a plate-like member having a layer having a fragile structure as the separation layer. 4. The sample separation apparatus according to claim 1, wherein the separation mechanism partially separates the sample so as to leave a substantially circular area as the unseparated area. A processing device according to claim 1. 5. The method according to claim 1, wherein the separation mechanism partially separates the sample by leaving a substantially circular region as the unseparated region in a substantially central portion of the separation layer. The processing device according to claim 1. 6. The separation mechanism includes: a drive mechanism for rotating the sample about an axis orthogonal to the separation layer; and an ejection unit for ejecting a fluid toward the separation layer. 6. The processing apparatus according to claim 1, wherein a partial separation process of the sample is performed while rotating the sample by the driving mechanism. 7. The driving mechanism rotates the sample at a low speed during an initial stage of the partial separation process of the sample, and thereafter,
The processing apparatus according to claim 6, wherein the sample is rotated at a high speed. 8. The processing apparatus according to claim 6, wherein the drive mechanism gradually or stepwise increases the rotation speed of the sample during the partial separation of the sample. . 9. The processing apparatus according to claim 6, wherein the drive mechanism changes a rotation speed of the sample during a partial separation process of the sample. 10. The jetting unit jets a high-pressure fluid in an initial stage of the partial separation process of the sample, and thereafter,
The processing apparatus according to claim 6, wherein the pressure of the fluid is reduced. 11. The processing apparatus according to claim 6, wherein the injection unit gradually or stepwise reduces the pressure of the fluid to be injected during the partial separation of the sample. 12. The processing apparatus according to claim 6, wherein the injection unit changes the pressure of the fluid to be injected during the partial separation of the sample. 13. The method according to claim 1, wherein the jetting unit jets a fluid toward a position separated by a predetermined distance in a plane direction from a center of the separation layer during a partial separation process of the sample. The processing device according to claim 6. 14. The device according to claim 1, wherein the unseparated region is smaller than a region where the separation layer is separated.
The processing apparatus according to claim 13. 15. The sample according to claim 1, wherein the first plate-shaped member having a fragile layer therein and a second plate-shaped member are bonded to each other. The processing device according to claim 1. 16. The processing apparatus according to claim 15, wherein the fragile layer is a porous layer. 17. The processing apparatus according to claim 15, wherein the first plate member is a semiconductor substrate. 18. The semiconductor device according to claim 17, wherein the first plate-shaped member is formed by forming a porous layer on one surface of a semiconductor substrate and forming a non-porous layer on the porous layer. The processing device according to the above. 19. The processing apparatus according to claim 18, wherein said non-porous layer includes a single crystal semiconductor layer. 20. A processing method for processing a sample having a layer for separation therein, wherein a predetermined region of the layer for separation is left as an unseparated region, and the sample is separated by the layer for separation. A processing method characterized by partial separation. 21. The processing method according to claim 20, wherein the sample is partially separated by injecting a fluid toward the separation layer. 22. The processing method according to claim 20, wherein the sample is a plate-shaped member having a layer having a fragile structure as the separation layer. 23. The processing method according to claim 20, wherein the sample is partially separated so as to leave a substantially circular region as the unseparated region. . 24. The sample is partially separated by leaving a substantially circular region as the unseparated region at a substantially central portion of the separation layer. The processing method according to any one of the above. 25. The sample is partially separated by injecting a fluid toward the separation layer while rotating the sample around an axis orthogonal to the separation layer. Any one of claims 20 to 24
The processing method described in the section. 26. The processing method according to claim 25, wherein in the initial stage of the partial separation process of the sample, the sample is rotated at a low speed, and then the sample is rotated at a high speed. 27. In the process of partially separating the sample,
The processing method according to claim 25, wherein the rotation speed of the sample is increased gradually or stepwise. 28. The method for partially separating a sample,
The processing method according to claim 25, wherein a rotation speed of the sample is changed. 29. The processing method according to claim 25, wherein a high pressure fluid is used in an initial stage of the partial separation process of the sample, and thereafter, a low pressure fluid is used. 30. In the process of partially separating the sample,
26. The processing method according to claim 25, wherein the pressure of the fluid to be separated is gradually or gradually reduced. 31. In the process of partially separating the sample,
26. The processing method according to claim 25, wherein the pressure of the fluid to be separated is changed. 32. In the partial separation treatment of the sample,
The fluid is ejected toward a position away from the center of the separation layer by a predetermined distance in the plane direction.
5. The processing method according to 5. 33. The non-separable region is smaller than a region where the separation layer is separated.
The processing method according to any one of claims 0 to 32. 34. The sample according to claim 20, wherein the sample is formed by bonding a first plate-like member having a fragile layer therein and a second plate-like member. Or the processing method according to claim 1. 35. The processing method according to claim 34, wherein the fragile layer is a porous layer. 36. The processing method according to claim 34, wherein the first plate-shaped member is a semiconductor substrate. 37. The first plate-like member according to claim 36, wherein a porous layer is formed on one surface of a semiconductor substrate, and a non-porous layer is formed on the porous layer. The processing method described. 38. The processing method according to claim 37, wherein the non-porous layer includes a single crystal semiconductor layer.