KR20000007554A - Aluminium layer etching method for fabricating semiconductor device - Google Patents

Aluminium layer etching method for fabricating semiconductor device Download PDF

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Publication number
KR20000007554A
KR20000007554A KR1019980026955A KR19980026955A KR20000007554A KR 20000007554 A KR20000007554 A KR 20000007554A KR 1019980026955 A KR1019980026955 A KR 1019980026955A KR 19980026955 A KR19980026955 A KR 19980026955A KR 20000007554 A KR20000007554 A KR 20000007554A
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South Korea
Prior art keywords
etching
aluminum film
semiconductor device
wafer
chemical bath
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KR1019980026955A
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Korean (ko)
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안승현
변광선
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윤종용
삼성전자 주식회사
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Priority to KR1019980026955A priority Critical patent/KR20000007554A/en
Publication of KR20000007554A publication Critical patent/KR20000007554A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Abstract

PURPOSE: A method of etching an aluminum layer is provided to make temperature control unnecessary by effectively removing the aluminium layer on a high temperature using a tetramethyl ammonium hydroxide dilute solution as an etchant. CONSTITUTION: The method comprises the steps of filling a chemical bath of a wet station with tetramethyl ammonium hydroxide having a concentrate of 1 to 20 weight percent; depositing a wafer in the chemical bath under high temperature and atmospheric pressure, wherein an aluminum layer is formed in the wafer. Using tetramethyl ammonium hydroxide as an etchant, the aluminium layer is effectively etched at a high temperature.

Description

반도체장치의 제조를 위한 알루미늄막의 에칭방법Etching method of aluminum film for manufacturing semiconductor device

본 발명은 반도체장치의 제조를 위한 알루미늄막의 에칭방법에 관한 것으로, 보다 상세하게는 에칭액으로서 테트라메틸암모늄하이드록사이드의 희석액을 사용하여 상온에서도 알루미늄막의 효율적인 제거가 가능하여 온도조절이 불필요한 반도체장치의 제조를 위한 알루미늄막의 에칭방법에 관한 것이다.The present invention relates to a method of etching an aluminum film for the manufacture of a semiconductor device, and more particularly, by using a dilute solution of tetramethylammonium hydroxide as an etching solution, it is possible to efficiently remove the aluminum film at room temperature, so that temperature control is unnecessary. It relates to a method of etching an aluminum film for production.

반도체장치의 제조공정 중 포토리소그래피공정은 포토레지스트를 웨이퍼 상에 도포하고, 패턴을 형성하는 등의 레지스트공정에 후속하여 에칭공정의 수행으로 완결된다.The photolithography process of the semiconductor device manufacturing process is completed by performing an etching process subsequent to a resist process such as applying a photoresist on a wafer and forming a pattern.

에칭공정에는 화학약품에 의한 웨트방식과 가스를 이용한 드라이방식이 있으며, 상기한 바의 레지스트 마스크를 사용한 리소그래피에서의 에칭 이외에 웨이퍼 상에 레지스트가 존재하지 않는 전면에칭도 있다.The etching process includes a wet method using chemicals and a dry method using a gas. In addition to etching in lithography using a resist mask as described above, there are also surface etching where no resist is present on the wafer.

에칭공정은 화학반응이 주체이고, 그것에 스퍼터링 등의 물리적인 요소가 가해지고 있는 기술이다. 원래 표면처리의 일환으로서 실리콘 등의 에칭에서 출발하여 플레이너 기술의 등장과 함께 산화실리콘막의 선택에칭기술 및 전극 등으로 사용되는 알루미늄막의 에칭기술 등으로 발전하여 왔다.An etching process is a technique in which chemical reaction is mainly performed and physical elements such as sputtering are applied thereto. Originally, as part of the surface treatment, starting with etching of silicon and the like, the planar technique has been developed, and has been developed into a selective etching technique of a silicon oxide film and an etching technique of an aluminum film used as an electrode.

특히, 알루미늄막의 에칭은 알루미늄막이 전극이나 배선 등으로서 반도체장치 내에서 주로 사용되기 때문에 알루미늄막의 에칭효율은 반도체장치의 생산성이나 수율에 큰 영향을 미친다고 할 수 있다.In particular, since etching of an aluminum film is mainly used in a semiconductor device as an electrode, wiring, etc., it can be said that the etching efficiency of an aluminum film has a big influence on the productivity and yield of a semiconductor device.

종래의 경우, 알루미늄막의 에칭은 주로 웨트방식이 사용되고 있으며, 웨트방식의 에칭의 경우에는 에칭공정을 조절할 조절인자로서 에칭액의 조성, 온도, 교반조건, 경시변화 및 처리매수 효과 등을 들 수 있으며, 특히 조성의 변화와 온도조절 등은 에칭의 성패를 좌우하는 주요한 조절인자로 고려되고 있다.In the conventional case, the etching of the aluminum film is mainly used in the wet method, and in the case of the wet method, the composition of the etching solution, the temperature, the stirring conditions, the change over time and the effect of the number of treatments may be used as control factors to control the etching process. In particular, changes in composition and temperature control are considered to be major control factors that influence the success or failure of etching.

따라서, 온도조절이 불필요할 정도로 상온에칭이 가능한 웨트방식의 에칭공정이 개발된다면 알루미늄막의 에칭효율을 높일 수 있고, 전체적으로 반도체장치의 생산성을 향상시킬 수 있음은 당연히 이해될 수 있다고 할 수 있다.Therefore, it can be understood that if a wet type etching process capable of etching at room temperature is developed so that temperature control is unnecessary, the etching efficiency of the aluminum film can be improved and the productivity of the semiconductor device as a whole can be improved.

한편, 종래의 알루미늄막의 에칭액으로서는 주로 질산, 초산 및 인산의 혼합물인 혼산이 사용되어 왔으며, 질산 1중량%, 초산 1중량% 및 인산 16중량%와 잔량으로서의 탈이온수로 된 알루미늄에칭액이 개발되어 상용적으로 시판되고 있다. 그러나, 이러한 종래의 알루미늄막의 에칭액은 50℃ 전후의 온도범위에서 온도가 조절될 것이 요구되고 있으며, 이를 위하여는 에칭챔버내에 에칭액의 온도조절을 위한 온도조절수단이 구비되어야 하며, 그에 따라 에칭챔버의 크기가 증대되고, 까다로운 온도조절이 수반되어야 하므로 에칭에 상당한 주의가 요구되며, 원만한 에칭공정을 위하여는 까다로운 온도조절을 하여야만 하는 불편점이 있었다.Meanwhile, as an etching solution of a conventional aluminum film, mixed acid, which is a mixture of nitric acid, acetic acid, and phosphoric acid, has been mainly used, and an aluminum etching solution containing 1% by weight of nitric acid, 1% by weight of acetic acid, 16% by weight of phosphoric acid, and deionized water as a residual amount has been developed and commercially available. Commercially available. However, the etching liquid of such a conventional aluminum film is required to control the temperature in the temperature range of about 50 ℃, for this purpose, the temperature control means for temperature control of the etching liquid must be provided in the etching chamber, accordingly Due to the increase in size and to be accompanied by a difficult temperature control, considerable attention is required to etching, and there is a disadvantage in that a difficult temperature control is required for a smooth etching process.

본 발명의 목적은 에칭액으로서 테트라메틸암모늄하이드록사이드의 희석액을 사용하여 상온에서도 알루미늄막의 효율적인 제거가 가능하여 온도조절이 불필요한 반도체장치의 제조를 위한 알루미늄막의 에칭방법을 제공하는 데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide an etching method of an aluminum film for the manufacture of a semiconductor device in which temperature control is unnecessary because the aluminum film can be efficiently removed at room temperature by using a dilute solution of tetramethylammonium hydroxide as an etching solution.

도 1은 본 발명의 에칭방법에 따른 에칭 전의 알루미늄막의 상태를 나타낸 전자현미경사진이다.1 is an electron micrograph showing the state of the aluminum film before etching according to the etching method of the present invention.

도 2는 본 발명의 에칭방법에 따라 15분간 에칭한 후의 알루미늄막의 상태를 나타낸 전자현미경사진이다.2 is an electron micrograph showing the state of the aluminum film after etching for 15 minutes in accordance with the etching method of the present invention.

도 3은 본 발명의 에칭방법에 따라 30분간 에칭한 후의 알루미늄막의 상태를 나타낸 전자현미경사진이다.3 is an electron micrograph showing the state of the aluminum film after etching for 30 minutes in accordance with the etching method of the present invention.

본 발명에 따른 반도체장치의 제조를 위한 알루미늄막의 에칭방법은, 웨트스테이션의 케미칼배쓰에 1 내지 20중량%의 농도의 테트라메틸암모늄하이드록사이드를 채우고, 상온, 대기압하에서 상기 케미칼배쓰내에 알루미늄막이 형성된 웨이퍼를 침적시키는 것으로 이루어진다.In the method of etching an aluminum film for manufacturing a semiconductor device according to the present invention, a tetramethylammonium hydroxide having a concentration of 1 to 20% by weight is filled in a chemical bath of a wet station, and an aluminum film is formed in the chemical bath at room temperature and atmospheric pressure. Consisting of depositing a wafer.

이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

본 발명에 따른 반도체장치의 제조를 위한 알루미늄막의 에칭방법은, 웨트스테이션의 케미칼배쓰에 1 내지 20중량%의 농도의 테트라메틸암모늄하이드록사이드를 채우고, 상온, 대기압하에서 상기 케미칼배쓰내에 알루미늄막이 형성된 웨이퍼를 침적시키는 것으로 이루어짐을 특징으로 한다.In the method of etching an aluminum film for manufacturing a semiconductor device according to the present invention, a tetramethylammonium hydroxide having a concentration of 1 to 20% by weight is filled in a chemical bath of a wet station, and an aluminum film is formed in the chemical bath at room temperature and atmospheric pressure. And depositing the wafer.

상기 테트라메틸암모늄하이드록사이드(TMAH ; Tetramethyl ammonium hydroxide)는 종래에는 반도체장치의 제조에서는 포토리소그래피공정 중의 현상공정에서 주로 사용되던 물질로서, 화학식으로서는 (CH3)4NOH로 표시되며, 강염기의 일종이며, 상용적으로는 10%의 용액으로 구입하여 사용할 수 있을 정도로 공지된 것이다.Tetramethyl ammonium hydroxide (TMAH) is a material that is mainly used in the development process during the photolithography process in the manufacture of semiconductor devices, and is represented by (CH 3 ) 4 NOH as a chemical formula, It is known to be commercially available to use as a 10% solution.

특히, 본 발명에서는 1 내지 10중량%의 비율로 탈이온수에 희석된 테트라메틸암모늄하이드록사이드를 사용하여 상온에서 알루미늄막이 효과적으로 에칭될 수 있음을 실험적으로 밝혀내고, 본 발명을 완성하였다.In particular, the present invention experimentally found that the aluminum film can be effectively etched at room temperature using tetramethylammonium hydroxide diluted in deionized water at a ratio of 1 to 10% by weight, and completed the present invention.

이하에서 본 발명의 바람직한 실시예 및 비교예들이 기술되어질 것이다.Hereinafter, preferred embodiments and comparative examples of the present invention will be described.

이하의 실시예들은 본 발명을 예증하기 위한 것으로서 본 발명의 범위를 국한시키는 것으로 이해되어져서는 안될 것이다.The following examples are intended to illustrate the invention and should not be understood as limiting the scope of the invention.

실시예Example

2.38중량%의 농도의 테트라메틸암모늄하이드록사이드 희석액을 통상의 웨트스테이션의 케미칼배쓰에 채우고, 상온(약 25℃)의 대기압 하에서 상기 케미칼배쓰에 알루미늄막이 형성된 웨이퍼를 25매 단위의 배치로 투입하여 침적시켜 에칭을 수행하였다.A tetramethylammonium hydroxide diluent of 2.38 wt% was charged in a chemical bath of a normal wet station, and a wafer in which an aluminum film was formed on the chemical bath at atmospheric temperature (about 25 ° C.) was charged in a batch of 25 sheets. Deposition was performed to etch.

에칭전과, 15분 에칭 후 및 30분 에칭 후에서의 웨이퍼의 알루미늄막의 상태를 관찰하기 위하여 전자현미경으로 촬영하였으며, 그 결과를 각각 도 1(에칭전), 도 2(15분 에칭 후) 및 도 3(30분 에칭 후)으로 나타내었다.Electron microscopy was used to observe the state of the aluminum film of the wafer before etching, after 15 minutes of etching, and after 30 minutes of etching, and the results are shown in FIGS. 1 (before etching), 2 (after 15 minutes etching) and FIG. 3 (after 30 min etching).

상기한 실시예들을 종합한 결과, 도 2 및 도 3에서 명백하게 나타나는 바와 같이, 상온에서도 알루미늄막이 효과적으로 에칭됨을 확인할 수 있었으며, 30분 에칭 후에는 알루미늄막이 완전히 제거됨을 확인하였다.As a result of the synthesis of the above embodiments, as apparent in FIGS. 2 and 3, it was confirmed that the aluminum film was effectively etched at room temperature, and after 30 minutes, the aluminum film was completely removed.

따라서, 본 발명에 의하면 에칭액으로서 테트라메틸암모늄하이드록사이드의 희석액을 사용하여 상온에서도 알루미늄막의 효율적인 제거가 가능하여 온도조절이 불필요한 반도체장치의 제조를 위한 알루미늄막의 에칭방법을 제공하는 효과가 있으며, 그에 의하여 알루미늄막의 효과적인 에칭을 가능하게 한다. 더욱이, 본 발명에 의하면 상온에서 에칭이 가능하기 때문에 별도의 온도조절수단이 필요치 않아, 실질적으로 웨트스테이션의 케미칼배쓰의 내용적을 증대시킬 수 있으며, 그에 따라 대구경의 웨이퍼의 사용을 가능하게 하여 역시 반도체장치의 생산성을 높일 수 있는 효과가 있다.Therefore, according to the present invention, by using a dilute solution of tetramethylammonium hydroxide as an etching solution, it is possible to efficiently remove the aluminum film at room temperature, thereby providing an etching method of the aluminum film for manufacturing a semiconductor device requiring no temperature control. This enables effective etching of the aluminum film. Furthermore, according to the present invention, since it is possible to etch at room temperature, a separate temperature control means is not necessary, thereby substantially increasing the contents of the chemical bath of the wet station, thereby enabling the use of a large-diameter wafer and also a semiconductor. There is an effect that can increase the productivity of the device.

이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (3)

웨트스테이션의 케미칼배쓰에 1 내지 20중량%의 농도의 테트라메틸암모늄하이드록사이드를 채우고, 상온, 대기압하에서 상기 케미칼배쓰내에 알루미늄막이 형성된 웨이퍼를 침적시키는 것으로 이루어짐을 특징으로 하는 반도체장치의 제조를 위한 알루미늄막의 에칭방법.Filling the chemical bath of the wet station with a tetramethylammonium hydroxide in a concentration of 1 to 20% by weight, and depositing a wafer formed with an aluminum film in the chemical bath at room temperature, atmospheric pressure for manufacturing a semiconductor device Etching method of aluminum film. 제 1 항에 있어서,The method of claim 1, 상기 테트라메틸암모늄하이드록사이드의 농도가 1 내지 5중량%임을 특징으로 하는 상기 반도체장치의 제조를 위한 알루미늄막의 에칭방법.And the tetramethylammonium hydroxide has a concentration of 1 to 5% by weight. 반도체장치의 제조에 있어서,In the manufacture of a semiconductor device, 표면에 알루미늄막이 형성된 웨이퍼의 알루미늄막의 웨트방식 에칭에 사용되는 테트라메틸암모늄하이드록사이드의 용도.The use of the tetramethylammonium hydroxide used for wet etching of the aluminum film of the wafer in which the aluminum film was formed in the surface.
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