KR19990080469A - How to form a fine pattern - Google Patents
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- KR19990080469A KR19990080469A KR1019980013769A KR19980013769A KR19990080469A KR 19990080469 A KR19990080469 A KR 19990080469A KR 1019980013769 A KR1019980013769 A KR 1019980013769A KR 19980013769 A KR19980013769 A KR 19980013769A KR 19990080469 A KR19990080469 A KR 19990080469A
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- film
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- 239000010408 film Substances 0.000 claims abstract description 68
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 41
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 229920003986 novolac Polymers 0.000 claims abstract description 5
- 229920005989 resin Polymers 0.000 claims abstract description 4
- 239000011347 resin Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000007261 regionalization Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
단차가 형성되어 있는 박막층 위에 DUV용 제1 감광막을 도포한 후, 그 위에 노볼락 수지계인 i-line용 제2 감광막을 1μm 정도의 두께로 도포한다. 다음, 제2 감광막을 i-line광으로 노광한 후 현상하여 미세화된 감광막 패턴을 형성한다. 다음, DUV광을 사용하여 전면 노광하면 미세 패턴이 형성된 부분을 제외한 부분의 제1 감광막이 노광되고, 제2 감광막 패턴을 유지하도록 현상하여 정확한 미세 패턴을 형성한다.After apply | coating the 1st photosensitive film for DUV on the thin film layer in which the step | step is formed, the 2nd photosensitive film for i-line which is a novolak resin system is apply | coated to it on the thickness of about 1 micrometer. Next, the second photoresist film is exposed to i-line light and then developed to form a miniaturized photoresist pattern. Next, when the entire surface is exposed using DUV light, the first photoresist film except for the portion where the micropattern is formed is exposed, and is developed to maintain the second photoresist pattern to form an accurate fine pattern.
이와 같은 방법으로 미세 패턴을 형성할 경우, 단차가 형성되어 있는 기판 위에라도 정확한 미세 패턴을 형성할 수 있으므로, 결국, 반도체 소자의 신뢰도 향상 및 수율 향상을 기대할 수 있다.In the case of forming the fine pattern in this manner, an accurate fine pattern can be formed even on the substrate on which the step is formed. Consequently, it is expected to improve the reliability and yield of the semiconductor device.
Description
본 발명은 반도체 소자 제조 방법 중 미세 패턴을 형성하는 방법에 관한 것이다.The present invention relates to a method of forming a fine pattern of a semiconductor device manufacturing method.
일반적으로 반도체 제조 공정은 웨이퍼 위에 전자 회로를 구성하는 공정, 칩을 리드 프레임과 결합하여 완제품으로 조립하는 공정, 완성된 제품을 검사하는 공정을 포함한다.In general, the semiconductor manufacturing process includes a process of constructing an electronic circuit on a wafer, a process of assembling a chip into a lead frame to assemble the finished product, and a process of inspecting the finished product.
이 중에서 웨이퍼 위에 전자 회로를 구성하기 위해 실시하는 사진 식각 공정(photolithography process)은 다음과 같다.Among them, a photolithography process performed to construct an electronic circuit on a wafer is as follows.
먼저, 유리판의 표면 위에 크롬, 에멀션(emulsion) 등을 이용하여 마스크를 제작한다. 다음, 웨이퍼의 표면에 감광막을 원하는 두께로 도포한 후, 유리판 위에 크롬 패턴으로 변환, 전사하여 제조한 마스크를 통하여 빛을 조사하여 마스크의 도면화된 패턴을 웨이퍼에 옮기고 노광을 한 감광막을 현상한다. 이 때, 양성(positive) 감광제가 사용된 경우에는 빛이 조사되지 않은 부분이 남고 조사된 부분은 현상액에 용해되어 나오므로, 결과적으로, 조사되지 않은 부분이 감광막 패턴이 되며, 음성(negative) 감광제가 사용된 경우에는 빛이 조사된 부분만이 남고 조사되지 않은 부분이 용해되어 제거되므로 조사된 부분이 패턴이 된다. 이와 같이 형성된 패턴을 이용하여 박막을 식각한 후, 남아있는 감광막을 제거한다.First, a mask is manufactured on the surface of a glass plate using chromium, an emulsion, etc. Next, after the photoresist film is applied to the surface of the wafer to a desired thickness, light is irradiated through a mask prepared by converting and transferring the chromium pattern onto a glass plate to transfer the masked pattern of the mask onto the wafer and developing the exposed photoresist film. . In this case, when a positive photosensitive agent is used, the portion to which no light is irradiated is left and the irradiated portion is dissolved in the developer, and as a result, the non-irradiated portion becomes a photoresist pattern, and a negative photosensitive agent When is used, only the irradiated part remains and the unirradiated part is dissolved and removed, so the irradiated part becomes a pattern. After etching the thin film using the pattern thus formed, the remaining photoresist film is removed.
박막을 식각하는 현상 공정에서는 일반적으로 알카리 용액을 현상 용액으로 사용하는 습식 식각 또는 가스 플라스마를 사용하는 건식 식각을 이용하며, 건식 식각 중에서 반응성 이온 식각(reactive ion etching) 방법은 과다 식각(undercut)을 일으키지 않고 수직 가공을 가능하게 하므로 미세 패턴 형성에 용이하다.In the developing process of etching a thin film, wet etching using an alkaline solution as a developing solution or dry etching using a gas plasma is generally used.Reactive ion etching among dry etching methods involves overcut etching. It is easy to form fine patterns because vertical processing is possible without causing.
한편, 실제의 기판 표면은 복잡한 단차를 가지고 있어 감광막 패턴 형성시 여러 가지 문제점이 발생한다. 예를 들면, 단차부에서는 감광막의 도포된 두께가 균일하지 않아 노출 시간 등의 노광 조건을 조절하기가 어렵고, 또 미세 패턴을 형성하기 위하여 감광막의 두께 자체를 감소시키면 핀 홀 등이 발생할 수 있다.On the other hand, since the actual substrate surface has a complicated step, various problems occur when the photosensitive film pattern is formed. For example, in the stepped portion, it is difficult to control the exposure conditions such as the exposure time because the coated thickness of the photoresist film is not uniform, and pinholes may occur when the thickness of the photoresist film itself is reduced to form a fine pattern.
도 1은 위와 같은 종래의 방법으로 형성한 미세 패턴을 도시한 단면도로서, 웨이퍼(1) 위에 배선(10) 등이 형성되어 있고, 그 위에 제1 절연막(11), SiO2막(12) 및 제2 절연막(13)이 차례로 적층되어 있다. 그 위에 금속막(14)이 적층되어 있고 그 위에는 감광막 패턴(15)이 형성되어 있다. 도 1에서 볼 수 있는 바와 같이, 배선(10)이 형성된 부분과 그렇지 않은 부분에는 단차가 형성되어 있으며, 따라서, 높이가 낮은 부분 위에 형성된 감광막 패턴(A)의 두께는 상대적으로 얇게 형성되고 높이가 높은 부분 위에 형성된 감광막 패턴(B)의 두께는 상대적으로 두껍게 형성된다.1 is a cross-sectional view showing a fine pattern formed by the conventional method as described above, in which a wiring 10 or the like is formed on a wafer 1, on which a first insulating film 11, a SiO 2 film 12 and The second insulating film 13 is sequentially stacked. The metal film 14 is laminated on it, and the photosensitive film pattern 15 is formed on it. As shown in FIG. 1, a step is formed in a portion where the wiring 10 is formed and a portion where the wiring 10 is not formed. Therefore, the thickness of the photoresist pattern A formed on the portion having a low height is relatively thin and the height is high. The thickness of the photosensitive film pattern B formed on the high portion is formed relatively thick.
이와 같이, 감광막 패턴의 두께가 균일하지 않을 경우, 설계상으로는 동일하지만 실제 형성된 감광막의 패턴상으로는 서로 동일하지 않은 선폭(critical dimension)의 차이로 인해, 높이가 상대적으로 작은 부분에 형성되어 있는 두꺼운 감광막 패턴(A)을 노광하기 위하여 필요한 노광량을 주면 단차가 큰 부분에 형성되어 있는 감광막 패턴(B)은 과다 노광이 되는 벌크 현상(bulk effect)이 발생한다.As described above, when the thickness of the photoresist pattern is not uniform, a thick photoresist pattern formed in a portion having a relatively small height due to the difference in the critical dimensions that are the same in design but not identical to each other in the pattern of the actually formed photoresist pattern. When the exposure amount necessary for exposing (A) is given, a bulk effect that results in overexposure of the photosensitive film pattern B formed in a portion having a large step occurs.
또한, 감광막 패턴(15) 하부에 금속막(14)과 같이 반사율이 높은 박막이 형성되어 있는 경우에는 노광 단계시 높이가 변화하는 부분에서 감광막을 통과한 빛이 무질서하게 반사됨으로써, 난반사 및 측면 반사 등에 의해 불필요한 곳에 빛이 침투하게 되어 해상도 또는 패턴 등의 열화가 발생할 수 있으며, 기판 위에 형성되어 있는 단차로 인해 초점 심도(depth of focus)를 감소시켜 결국 공정 마진을 감소시키게 된다.In addition, when a thin film having a high reflectance, such as the metal film 14, is formed below the photosensitive film pattern 15, light passing through the photosensitive film is randomly reflected at a portion where the height is changed during the exposure step, thereby causing diffuse reflection and side reflection. Light may penetrate into unnecessary places such as deterioration of resolution or pattern, and may reduce depth of focus due to a step formed on the substrate, thereby reducing process margin.
본 발명이 이루고자 하는 과제는 단차에 영향을 받지 않고 안정적이며 정확한 패턴을 형성할 수 있는 미세 패턴 형성 방법을 제공하는 것이다.An object of the present invention is to provide a fine pattern forming method that can form a stable and accurate pattern without being affected by the step.
도 1은 종래 기술에 따른 미세 패턴 형성 방법을 순서대로 도시한 단면도이고,1 is a cross-sectional view sequentially showing a fine pattern forming method according to the prior art,
도 2a 내지 도 2e는 본 발명의 실시예에 따른 미세 패턴 형성 방법을 순서대로 도시한 단면도이다.2A through 2E are cross-sectional views sequentially illustrating a method for forming a fine pattern according to an embodiment of the present invention.
이러한 과제를 이루기 위하여 본 발명에서는 반응하는 파장역이 서로 다른 두 감광막층을 형성하는데, 하부 감광막은 비교적 두껍게 도포하여 표면을 평탄하게 형성한 후, 그 위에 하부층의 노광시 마스크가 되는 상부 감광막을 얇게 차례로 도포한다.In order to achieve the above object, in the present invention, two photoresist layers having different wavelength ranges are formed, and the lower photoresist layer is applied relatively thick to form a flat surface, and then the upper photoresist layer, which is a mask when exposing the lower layer, is thinned thereon. Apply sequentially.
즉, 단차가 형성된 기판 위에 양성(positive) 감광막인 제1 감광막을 도포하고 그 위에 노볼락 레진(novolak resin)으로 이루어진 제2 감광막을 1μm 정도의 두께로 도포한 다음. 제2 감광막을 노광, 현상하여 제2 감광막 패턴을 형성한다. 다음, 제1 감광막이 반응하는 파장의 빛을 이용하여 광을 이용하여 형성된 제2 감광막 패턴과 제 1감광막을 전면 노광하여 제2 감광막 패턴이 형성된 부분을 제외한 부분의 제2 감광막을 노광시킨 후, 제2 감광막 패턴을 마스크로 하여 노광된 제1 감광막을 현상하면 감광막 하부의 단차에도 불구하고 정확한 미세 패턴을 형성할 수 있다.That is, a first photoresist film, which is a positive photoresist film, is applied on a stepped substrate, and a second photoresist film made of novolak resin is applied thereon to a thickness of about 1 μm. The second photosensitive film is exposed and developed to form a second photosensitive film pattern. Next, after exposing the second photoresist film formed by using light using the light of the wavelength at which the first photoresist film reacts and exposing the second photoresist film except for the portion where the second photoresist pattern is formed, the second photoresist film is exposed. When the exposed first photosensitive film is developed using the second photosensitive film pattern as a mask, an accurate fine pattern may be formed despite the step difference under the photosensitive film.
그러면, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 첨부한 도면을 참고로 하여 본 발명의 실시예에 대하여 상세히 설명한다.Then, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention.
도 2a 내지 도 2e는 본 발명의 실시예에 따른 미세 패턴 형성 방법을 차례로 도시한 단면도로서, 도 2a 내지 도 2e를 참고로 하여 본 발명의 실시예에 따른 미세 패턴의 형성 방법에 대하여 설명한다.2A to 2E are cross-sectional views sequentially illustrating a method of forming a fine pattern according to an embodiment of the present invention, and a method of forming a fine pattern according to an embodiment of the present invention will be described with reference to FIGS. 2A to 2E.
먼저, 도 2a에 도시된 바와 같이, 배선(21)이 형성되어 있고, 그 위에 제1 절연막(22), 제2 절연막(23) 및 제3 절연막(24)이 차례로 적층되어 있는 웨이퍼(25) 위에 금속 박막층(20)을 증착한다. 그 위에 180∼330nm, 특히, 248nm의 빛에 반응하는 DUV(deep ultra violet)용 제1 감광막(30)을 도포하여 기판 표면의 단차를 무시할 수 있도록 평탄화한 다음, 그 위에 도 2b에 도시한 바와 같이, 노볼락 레진(novolak resin)으로 이루어져 있으며 150∼405nm, 특히, 365nm의 빛에 반응하는 i-line용 제2 감광막(40)을 도포한다. 이 때, 제1 감광막으로 빛을 받은 부분이 현상액에 용해되는 양성(positive) 감광제를 사용하고, 감광막의 두께가 얇을수록 해상 한계 및 초점 여유도가 향상되므로 제2 감광막(12)의 두께는 0.6∼1.5μm 정도로 얇게 형성한다.First, as shown in FIG. 2A, a wiring 21 is formed, and a wafer 25 on which a first insulating film 22, a second insulating film 23, and a third insulating film 24 are sequentially stacked. The metal thin film layer 20 is deposited thereon. The first photosensitive film 30 for deep ultra violet (DUV), which reacts to light of 180 to 330 nm, in particular 248 nm, is applied thereon and planarized so that the step difference on the surface of the substrate is negligible, and as shown in FIG. 2B thereon. Similarly, a second photosensitive film 40 for i-line is applied which is made of novolak resin and reacts to light of 150 to 405 nm, in particular 365 nm. In this case, a positive photosensitive agent is used in which the light-receiving portion of the first photoresist film is dissolved in a developer, and as the thickness of the photoresist film is thinner, the resolution limit and focus margin are improved, so the thickness of the second photoresist film 12 is 0.6. Form as thin as -1.5 micrometers.
한편, 제2 감광막(40) 도포시 제1 감광막(30)을 효과적으로 보호하기 위하여 제2 감광막(40)을 도포하기 전에 제1 감광막(30)을 고온에서 가열하여 경화시킨다. 이 때, 가열 온도는 DUV용 감광막의 종류에 따라 다르나 약 90∼120℃ 정도가 바람직하다.Meanwhile, in order to effectively protect the first photosensitive film 30 when the second photosensitive film 40 is applied, the first photosensitive film 30 is heated and cured at a high temperature before the second photosensitive film 40 is applied. At this time, the heating temperature varies depending on the type of the DUV photosensitive film, but is preferably about 90 to 120 ° C.
다음, 도 2c에 도시한 바와 같이, i-line에 해당하는 365nm의 파장의 빛을 미세 패턴이 새겨진 마스크를 통하여 노광한 후 현상하여 제2 감광막 패턴(50)을 형성한다. 이 때, 제2 감광막(40)의 두께가 얇고 일정하기 때문에 원하는 패턴이 정확하게 형성되며, 공정 마진 또한 높아진다.Next, as illustrated in FIG. 2C, light having a wavelength of 365 nm corresponding to the i-line is exposed through a mask engraved with a fine pattern and then developed to form a second photoresist pattern 50. At this time, since the thickness of the second photosensitive film 40 is thin and constant, a desired pattern is accurately formed, and the process margin is also high.
다음, 도 2d에 도시한 바와 같이, 248nm의 빛(60)을 사용하여 전면 노광하는데, 이때, 노볼락 레진으로 만들어진 i-line용 감광막은 DUV광에 대하여 투과율이 10%/um 정도이므로, 제2 감광막 패턴(50) 하부에 위치한 DUV용 감광막(30)은 감광되지 않는다. 노광에 사용되는 광으로는 평행한 광을 사용하는 것이 바람직하다. 다음, 도 2e에 도시한 것처럼, 현상 단계를 거쳐 제2 감광막 패턴 하부를 제외한 DUV용 감광막을 제거하여 미세 패턴(70)을 형성한다. 즉, 반응성 이온 식각(reactive ion etching) 방법을 사용하여 이방성 식각을 하여 미세화된 제2 감광막 패턴을 마스크로 하여 제2 감광막을 식각함으로써, 미세 패턴을 형성한다.Next, as shown in FIG. 2D, the entire surface is exposed using the light 60 of 248 nm. At this time, since the i-line photosensitive film made of novolac resin has a transmittance of about 10% / um with respect to DUV light, 2 The DUV photosensitive film 30 positioned below the photosensitive film pattern 50 is not exposed. It is preferable to use parallel light as light used for exposure. Next, as illustrated in FIG. 2E, a fine pattern 70 is formed by removing the DUV photosensitive film except for the lower portion of the second photosensitive film pattern through a developing step. That is, the micro pattern is formed by etching the second photoresist film using the second photoresist pattern that has been miniaturized by anisotropic etching using a reactive ion etching method as a mask.
위에서 알 수 있는 바와 같이, 감응하는 파장이 서로 다른 두 감광막을 상, 하부에 형성한 후, 얇게 도포된 상부 감광막을 이용하여 먼저, 미세화된 감광막 패턴을 형성하고 다시 전면 노광한 후, 현상시 상부 감광막 패턴을 유지하여 미세 패턴을 형성함으로써, 단차가 심한 기판 상에 패턴을 형성하는 경우에도 미세화된 패턴을 정확하게 형성할 수 있으므로, 결과적으로, 반도체의 소자의 신뢰도 향상 및 수율 향상을 기대할 수 있다.As can be seen above, two photoresist films having different wavelengths are formed on the upper and lower portions thereof, and then, using the thinly coated upper photoresist film, first, the microscopic photoresist pattern is formed and subjected to full exposure again, and then the upper part during development. By maintaining the photoresist pattern to form a fine pattern, even when a pattern is formed on a substrate having a high level of difference, a fine pattern can be formed accurately. As a result, it is possible to improve the reliability and yield of the device of the semiconductor.
Claims (8)
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| KR1019980013769A KR100250265B1 (en) | 1998-04-17 | 1998-04-17 | Method of manufacturing micropattern |
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