KR19990056730A - 액정표시소자의 제조 방법 - Google Patents
액정표시소자의 제조 방법 Download PDFInfo
- Publication number
- KR19990056730A KR19990056730A KR1019970076741A KR19970076741A KR19990056730A KR 19990056730 A KR19990056730 A KR 19990056730A KR 1019970076741 A KR1019970076741 A KR 1019970076741A KR 19970076741 A KR19970076741 A KR 19970076741A KR 19990056730 A KR19990056730 A KR 19990056730A
- Authority
- KR
- South Korea
- Prior art keywords
- bus line
- gate bus
- liquid crystal
- crystal display
- gate
- Prior art date
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (4)
- 동일 유리 기판상에 매트릭스 형태로 배열된 다수의 게이트 버스 라인과 다수의 데이터 버스 라인; 상기 게이트 버스 라인과 상기 데이터 버스 라인의 교차점에 형성된 다수의 박막 트랜지스터;및 각각의 게이트 버스 라인과 데이터 버스 라인으로 둘러싸인 공간 내에, 신호 인가시 평행장을 형성하도록 구비된 화소 전극과 공통 전극을 포함하는 액정 표시 소자의 제조 방법으로서,유리 기판상에 투명 전극 물질 및 비저항이 낮은 금속 물질을 증착하는 단계;사진 식각 공정을 통하여 상기 금속 물질을 식각함으로써, 상기 금속 물질로 된 상층 게이트 버스 라인을 형성하는 단계;및사진 식각 공정을 통하여 상기 투명 전극 물질을 식각함으로써, 상기 투명 물질로 된 상기 공통 전극과, 상기 상층 게이트 버스 라인의 형상을 따라 하부에 상기 투명 전극 물질로 된 하층 게이트 버스 라인을 형성하여 2층의 상기 게이트 버스 라인을 완성하는 단계를 포함하는 것을 특징으로 하는 액정 표시 소자의 제조 방법.
- 제 1항에 있어서, 상기 금속 물질은 몰리텅스텐 또는 크롬인 것을 특징으로 하는 액정 표시 소자의 제조 방법.
- 제 1항에 있어서, 상기 투명 전극 물질은 ITO인 것을 특징으로 하는 액정 표시 소자의 제조 방법.
- 제 1항에 있어서, 상기 데이터 버스 라인과 상기 화소 전극은 동일 면상에 형성되며, 그의 제조 방법은 상기 게이트 버스 라인과 상기 공통 전극의 제조 방법과 동일하며, 상기 데이터 버스 라인을 구성하는 금속 물질은 알루미늄인 것을 특징으로 하는 액정 표시 소자의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970076741A KR100462381B1 (ko) | 1997-12-29 | 1997-12-29 | 액정표시소자의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970076741A KR100462381B1 (ko) | 1997-12-29 | 1997-12-29 | 액정표시소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990056730A true KR19990056730A (ko) | 1999-07-15 |
KR100462381B1 KR100462381B1 (ko) | 2005-06-07 |
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KR1019970076741A KR100462381B1 (ko) | 1997-12-29 | 1997-12-29 | 액정표시소자의 제조 방법 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990070436A (ko) * | 1998-02-20 | 1999-09-15 | 윤종용 | 새로운 전극 구조를 갖는 액정 표시 장치 |
KR20020022625A (ko) * | 2000-09-20 | 2002-03-27 | 가나이 쓰토무 | 액정 표시 장치 |
KR100394027B1 (ko) * | 2000-12-27 | 2003-08-06 | 엘지.필립스 엘시디 주식회사 | 저저항 배선을 갖는 액정 디스플레이 패널 및 그 제조방법 |
KR100492210B1 (ko) * | 2001-06-28 | 2005-05-30 | 가부시키가이샤 히타치세이사쿠쇼 | 액정 표시 장치 |
KR100507271B1 (ko) * | 1999-06-30 | 2005-08-10 | 비오이 하이디스 테크놀로지 주식회사 | 고개구율 및 고투과율 액정표시장치 및 그 제조방법 |
KR100533719B1 (ko) * | 2001-06-29 | 2005-12-06 | 엘지.필립스 엘시디 주식회사 | 유기 전계발광소자 및 그 제조방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940009148B1 (ko) * | 1987-04-30 | 1994-10-01 | 삼성전관 주식회사 | 액티브 매트릭스 액정의 제조방법 |
KR960016638B1 (en) * | 1993-07-20 | 1996-12-16 | Samsung Electronics Co Ltd | Active matrix liquid crystal display and its making method |
JP3423380B2 (ja) * | 1993-11-18 | 2003-07-07 | キヤノン株式会社 | 液晶表示装置 |
JPH09269497A (ja) * | 1996-01-31 | 1997-10-14 | Hosiden Corp | 液晶表示素子 |
KR100257370B1 (ko) * | 1997-05-19 | 2000-05-15 | 구본준 | 횡전계방식액정표시장치 |
KR100251512B1 (ko) * | 1997-07-12 | 2000-04-15 | 구본준 | 횡전계방식 액정표시장치 |
KR100257976B1 (ko) * | 1997-07-22 | 2000-06-01 | 구본준, 론 위라하디락사 | 횡전계방식액정표시장치 |
-
1997
- 1997-12-29 KR KR1019970076741A patent/KR100462381B1/ko active IP Right Grant
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990070436A (ko) * | 1998-02-20 | 1999-09-15 | 윤종용 | 새로운 전극 구조를 갖는 액정 표시 장치 |
KR100507271B1 (ko) * | 1999-06-30 | 2005-08-10 | 비오이 하이디스 테크놀로지 주식회사 | 고개구율 및 고투과율 액정표시장치 및 그 제조방법 |
KR20020022625A (ko) * | 2000-09-20 | 2002-03-27 | 가나이 쓰토무 | 액정 표시 장치 |
US6933989B2 (en) | 2000-09-20 | 2005-08-23 | Hitachi, Ltd. | Manufacturing method for a liquid crystal display device |
US7768621B2 (en) | 2000-09-20 | 2010-08-03 | Hitachi, Ltd. | Manufacturing method for a liquid crystal display |
KR100394027B1 (ko) * | 2000-12-27 | 2003-08-06 | 엘지.필립스 엘시디 주식회사 | 저저항 배선을 갖는 액정 디스플레이 패널 및 그 제조방법 |
KR100492210B1 (ko) * | 2001-06-28 | 2005-05-30 | 가부시키가이샤 히타치세이사쿠쇼 | 액정 표시 장치 |
KR100533719B1 (ko) * | 2001-06-29 | 2005-12-06 | 엘지.필립스 엘시디 주식회사 | 유기 전계발광소자 및 그 제조방법 |
Also Published As
Publication number | Publication date |
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KR100462381B1 (ko) | 2005-06-07 |
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