KR19990052378A - Liquid epoxy resin composition for semiconductor device encapsulation - Google Patents
Liquid epoxy resin composition for semiconductor device encapsulation Download PDFInfo
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
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- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/08—Epoxidised polymerised polyenes
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
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- C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
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Abstract
본 발명은 에폭시 수지, 경화제, 경화촉진제, 무기충전제, 난연제, 착색제 및 첨가제로 이루어지는 에폭시 수지 조성물에 있어서, 상기 무기충전제로 실리카를 사용하되 입자크기가 0.3㎛이하인 것을 10 내지 20중량%, 1 내지 45㎛범위의 것을 40 내지 50중량% 사용하는 것을 특징으로 하는 반도체 소자 봉지용 액상 에폭시 수지 조성물에 관한 것으로, 본 발명에 의한 에폭시 수지 조성물을 사용함으로써 반도체 리드사이의 미세한 공간에 무기충전제가 용이하게 침투할 수 있어 반도체 소자의 밀봉시 내크랙성 및 성형성이 우수하게 된다.The present invention is an epoxy resin composition consisting of an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, a flame retardant, a coloring agent and an additive, wherein silica is used as the inorganic filler, but the particle size is 10 to 20% by weight or less, 1 to 1 It relates to a liquid epoxy resin composition for semiconductor element encapsulation, characterized by using 40 to 50% by weight of 45㎛ range, by using the epoxy resin composition according to the present invention, the inorganic filler in the minute space between the semiconductor leads easily Since it can penetrate, it becomes excellent in crack resistance and moldability at the time of sealing a semiconductor element.
Description
본 발명은 반도체소자 봉지용 액상 에폭시수지 조성물에 관한 것으로, 보다 상세하게는 에폭시 조성물의 구성성분인 무기충전제의 입자크기를 조절하여 무기충전제의 함량을 증가시킴으로써 내크랙성 및 성형성이 우수한 반도체 소자 봉지용 액상 에폭시수지 조성물에 관한 것이다.The present invention relates to a liquid epoxy resin composition for semiconductor device encapsulation, and more particularly, to a semiconductor device having excellent crack resistance and moldability by increasing the content of the inorganic filler by controlling the particle size of the inorganic filler as a component of the epoxy composition. It relates to a liquid epoxy resin composition for sealing.
최근 반도체 제조기술의 발달로 칩의 크기는 점점 커짐에도 불구하고 반도체칩의 집적도가 급속하게 증가함과 아울러 반도체 실장방식이 핀삽입형에서 반도체 패키지의 소형화, 경량화가 가능한 표면 실장방식으로 변화되고 있으며, 특히 패키지로서 COB(CHIP ON BOARD), CSP(CHIP SIZE PACKAGE), TAB(TAPE AUTOMATED BONDING), BGA(BALL GRID ARRAY) 패키지가 많이 개발되어 상품화 되고 있다.Despite the recent increase in the size of chips due to the development of semiconductor manufacturing technology, the degree of integration of semiconductor chips is rapidly increasing and the semiconductor mounting method is changing from a pin insertion type to a surface mounting method capable of miniaturizing and reducing the weight of a semiconductor package. In particular, COB (CHIP ON BOARD), CSP (CHIP SIZE PACKAGE), TAB (TAPE AUTOMATED BONDING), BGA (BALL GRID ARRAY) packages have been developed and commercialized.
그러나, 표면실장형 패키지 방식은 실장시 고온, 약 215 내지 260℃에서 땜납(Soldering)에 의한 패키지 크랙이 발생하는 문제점이 있어, 이에 따른 반도체 소자 봉지용 에폭시수지 조성물의 물성도 다양하게 요구되고 있는 실정이다.However, the surface mount package method has a problem in that package cracks are caused by soldering at a high temperature at about 215 ° C. to 260 ° C. when the package is mounted. It is true.
따라서, 표면실장형의 패키지에 사용되면서 패키지 크랙을 방지할 수 있는 반도체 소자 봉지용 에폭시수지 조성물을 제조하기 위한 방법들이 개발되고 있다.Therefore, methods for manufacturing an epoxy resin composition for semiconductor device encapsulation that can be used in a surface mount package and prevent package cracks have been developed.
종래의 내열성을 향상시켜 크랙을 방지하기 위한 방법으로는 여러 가지의 것이 제안되고 있는데, 예를 들면 다기능 에폭시 수지 또는 내열성이 우수한 비스말레이미드를 사용하는 방법이 있으나, 유리전이 온도상승에 따른 내습성이 저하하는 문제점이 있어 효과적이지는 못하였다.Conventional methods for preventing cracks by improving heat resistance have been proposed. For example, a multifunctional epoxy resin or a method using bismaleimide having excellent heat resistance may be used. This deterioration problem was not effective.
또한, 일본국 특개평3-177450에서는 무기충전제의 입자크기 조절 및 입도분포를 조절하여 내열성을 향상시키는 방법을 제안하고 있으나, 집적도 증가에 따른 반도체칩의 축소로 반도체 리드(LEAD)사이의 간격도 축소되어 성형불량율이 현저하게 증가하는 문제점이 발생하였다.In addition, Japanese Patent Laid-Open No. 3-177450 proposes a method of improving heat resistance by controlling the particle size and particle size distribution of the inorganic filler, but also the gap between the semiconductor leads due to the reduction of the semiconductor chip due to the increase in the degree of integration. There was a problem that the shrinkage rate is significantly increased by shrinking.
본 발명의 목적은 상기와 같은 종래의 문제점을 해결하기 위하여 안출된 것으로, 에폭시수지 조성물중 무기충전제의 함량 및 입자크기를 조절함으로써, 내크랙성 및 성형성이 우수한 반도체 소자 봉지용 액상 에폭시 수지 조성물을 제공하는 것이다.An object of the present invention is to solve the conventional problems as described above, by adjusting the content and particle size of the inorganic filler in the epoxy resin composition, liquid epoxy resin composition for sealing semiconductor devices excellent in crack resistance and moldability To provide.
즉, 본 발명은 에폭시 수지, 경화제, 경화촉진제, 무기충전제, 난연제, 착색제 및 첨가제로 이루어지는 에폭시 수지 조성물에 있어서, 상기 무기충전제로 실리카를 사용하되 입자크기가 0.3㎛이하인 것을 10 내지 20중량%, 1 내지 45㎛범위의 것을 40 내지 50중량%로 사용하는 것을 특징으로 하는 반도체 소자 봉지용 액상 에폭시수지 조성물에 관한 것이다.That is, the present invention is an epoxy resin composition consisting of an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, a flame retardant, a colorant and an additive, wherein silica is used as the inorganic filler, but the particle size is 10 to 20% by weight or less, It relates to a liquid epoxy resin composition for semiconductor element encapsulation, characterized in that the use of 40 to 50% by weight in the range of 1 to 45㎛.
이하 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail.
본 발명에서 사용되는 에폭시 수지 조성물은 에폭시 수지, 경화제, 경화촉진제, 무기충전제, 착색제 및 기타 첨가제로 구성되는 종래의 에폭시 수지 조성물의 구성이면 가능하고 특별히 본 발명을 위하여 한정되는 것은 아니다.The epoxy resin composition used in the present invention may be a constitution of a conventional epoxy resin composition composed of an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, a coloring agent, and other additives, and is not particularly limited for the present invention.
따라서, 일반적인 반도체 소자 봉지용 에폭시수지 조성물, 예를들면, 에폭시 수지 15 내지 30중량%, 경화제 8 내지 15중량%, 경화촉진제 0.1 내지 1.0중량%, 무기충전제 30 내지 60중량%, 착색제 1.0중량%내외, 난연제 1 내지 3중량%, 무기난연제 1 내지 3중량%, 첨가제 1 내지 5중량% 등으로 조성된 것을 본 발명에 사용할 수 있다.Therefore, a general epoxy resin composition for encapsulating semiconductor elements, for example, 15 to 30% by weight epoxy resin, 8 to 15% by weight curing agent, 0.1 to 1.0% by weight curing accelerator, 30 to 60% by weight inorganic filler, 1.0% by weight colorant Internal and external, 1 to 3% by weight of the flame retardant, 1 to 3% by weight of the inorganic flame retardant, 1 to 5% by weight of additives and the like can be used in the present invention.
본 발명에서 사용되는 에폭시수지는 나프탈렌계 다기능 액상 에폭시수지, 고순도의 올소크레졸 노볼락형 에폭시수지, 비스페놀A형 액상 에폭시수지 등을 사용할 수 있고, 경화제는 고순도의 노볼락형 페놀수지, 산무수물 등을 사용할 수 있다.The epoxy resin used in the present invention may be a naphthalene-based multifunctional liquid epoxy resin, high purity allocresol novolac epoxy resin, bisphenol A liquid epoxy resin, etc., the curing agent is a high-purity novolac phenol resin, acid anhydride, etc. Can be used.
본 발명에서 무기충전제로는 고순도의 천연실리카, 합성실리카, 알루미나 등이 사용될 수 있으나, 종래의 조성물과는 달리 입자직경이 서로 상이한 것을 사용하는데, 보다 구체적으로는 입자크기 0.3㎛ 이하의 실리카를 10 내지 20중량% 사용하고, 1 내지 45㎛의 것을 40 내지 50중량% 사용함으로써 고내열화를 만족하여 내크랙성과 성형성을 향상시킬 수 있게된다. 본 발명에서 실리카의 입자직경이 45㎛를 초과하는 경우에는 반도체 리드사이의 미세한 공간에 용이하게 침투될 수 없고, 충전비율이 저하되므로 내열성 및 내습성이 떨어지는 단점이 있다. 따라서, 사용되는 무기충전제의 함량 및 입자크기는 본 발명의 범위가 바람직하고 전제적인 평균 입자크기는 5㎛미만이 바람직하다.In the present invention, the inorganic filler may be a high purity natural silica, synthetic silica, alumina, etc., but different from the conventional composition, the particle diameter is different from each other, more specifically, the silica having a particle size of 0.3 ㎛ or less 10 By using from 20% by weight to 40% by weight of 1 to 45 µm, high heat resistance can be satisfied and crack resistance and formability can be improved. In the present invention, when the particle diameter of the silica exceeds 45 μm, it cannot be easily penetrated into the minute spaces between the semiconductor leads, and since the filling ratio is lowered, heat resistance and moisture resistance are inferior. Therefore, the content and particle size of the inorganic filler to be used is preferred in the scope of the present invention, the overall average particle size is less than 5㎛.
본 발명에서의 난연제로는 브롬으로 치환된 에폭시 수지 및 무기 난연제로는 삼산화안티몬(Sb2O3) 또는 사산화안티몬(Sb2O4) 등을 사용할 수 있고, 특별히 한정되는 것은 아니다.As the flame retardant in the present invention, an epoxy resin substituted with bromine and an inorganic flame retardant may be used antimony trioxide (Sb 2 O 3 ) or antimony tetraoxide (Sb 2 O 4 ), and the like.
또한, 본 발명의 범위를 벗어나지 않는한 일반적으로 첨가되는 이형제, 착색제, 결합제, 개질제, 경화촉진제 등을 첨가하는 것도 가능하다.In addition, it is also possible to add a release agent, colorant, binder, modifier, curing accelerator, and the like generally added without departing from the scope of the present invention.
본 발명의 반도체 소자 봉지용 액상 에폭시 수지 조성물은 상기와 같은 종래의 에폭시 수지 조성물에서 입자크기가 서로 상이한 실리카를 믹싱한 후 니딩(Kneading), 냉각, 크러쉬(Crush)공정 및 블랜딩 공정을 거치는 일반적인 제조방법에 의하여 제조될 수 있다.The liquid epoxy resin composition for encapsulating a semiconductor device of the present invention is manufactured in general through a kneading, cooling, crushing, and blending process after mixing silica having different particle sizes in the conventional epoxy resin composition as described above. It can be manufactured by the method.
이하 본 발명을 실시예를 들어 더욱 상세히 설명하고자 하나, 본 발명이 하기 실시예에 의하여 제한 되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited by the following Examples.
실시예 1Example 1
에폭시수지 조성물중 에폭시수지를 나프탈렌계 다기능 액상 에폭시수지를 사용하고 가열이 가능한 3-롤밀을 사용하여 무기충전제를 입도별로 표 1과 같이 평량한 후 기타 첨가제를 균일하게 분산시키고 용융 혼합상태로 반응시키면서 최종 봉지재의 점도를 관리하여 액상 에폭시수지 조성물을 제조한다.Epoxy resin in the epoxy resin composition, naphthalene-based multi-functional liquid epoxy resin, using a 3-roll mill that can be heated to weigh the inorganic filler as shown in Table 1 by dispersing other additives uniformly and reacted in a molten mixed state The viscosity of the final encapsulant is controlled to prepare a liquid epoxy resin composition.
상기와 같이 제조된 액상 에폭시수지 조성물을 2장의 유리판사이의 간격을 100㎛로 유지하고 유리판의 온도를 80℃에서 20분간 유지된 상태에서 경화될 때 까지 액상 에폭시 조성물이 침투된 거리를 측정하여 내습성, 내열성용 시편을 175℃에서 금형을 이용하여 캐스팅 방법으로 시편을 제작한 다음 175℃의 오븐에서 6시간 후경화시키고 물성을 측정하여 표 1에 나타내었다.The distance between the liquid epoxy resin composition prepared as described above was measured by maintaining the distance between the two glass plates at 100 μm and curing the liquid epoxy composition until the glass plate was cured while being kept at 80 ° C. for 20 minutes. The wet and heat resistant specimens were prepared by casting using a mold at 175 ° C., and then cured after 6 hours in an oven at 175 ° C., and the physical properties thereof are shown in Table 1 below.
실시예 2Example 2
에폭시수지 조성물중 무기충전제 조성비율을 표 1과 같이 평량하여 실시예 1과 동일한 방법으로 실시한 후 물성을 측정하여 표 1에 나타내었다.Inorganic filler composition ratio in the epoxy resin composition was carried out in the same manner as in Example 1 to the basis weight as shown in Table 1 and measured in the physical properties are shown in Table 1.
실시예 3Example 3
에폭시수지 조성물중 무기충전제 조성비율을 표 1과 같이 평량하여 실시예 1과 동일한 방법으로 실시한 후 물성을 평가하여 표 1에 나타내었다.Inorganic filler composition ratio in the epoxy resin composition was carried out in the same manner as in Example 1 to the basis weight as shown in Table 1 to evaluate the physical properties are shown in Table 1.
비교예 1Comparative Example 1
에폭시수지 조성물증 무기충전제 조성비율을 표 1과 같이 평량하여 실시예 1과 동일한 방법으로 실시한 후 물성을 평가하여 표 1에 나타내었다.Epoxy Resin Composition The inorganic filler composition ratio of the increase in weight as shown in Table 1 was carried out in the same manner as in Example 1 and the physical properties were evaluated and shown in Table 1.
비교예 2Comparative Example 2
에폭시수지 조성물중 무기충전제 조성비율을 표 1과 같이 평량하여 실시예 1과 동일한 방법으로 실시한 후 물성을 평가하여 표 1에 나타내었다.Inorganic filler composition ratio in the epoxy resin composition was carried out in the same manner as in Example 1 to the basis weight as shown in Table 1 to evaluate the physical properties are shown in Table 1.
물성평가방법Property evaluation method
(1)침투거리(1) penetration
액상 에폭시수지 조성물을 2장의 유리판사이의 간격을 100㎛로 유지하고, 유리판의 온도를 80℃에서 20분간 유지한 상태에서 침투된 거리를 측정한다.The distance between two glass plates of the liquid epoxy resin composition was maintained at 100 µm, and the distance penetrated while keeping the temperature of the glass plate at 80 ° C. for 20 minutes was measured.
(2)내습성(2) moisture resistance
가열된 금형(온도=175℃, 경화시간=120sec)에서 내습성 평가용 시편을 캐스팅방식으로 시편(가로=4cm, 세로=2cm, 두께=0.4cm)을 제작한 후 175℃의 오븐에서 6시간 후경화시킨 다음 가열/가압 포화수증기조(121℃, 2기압)에서 24시간 방치하여 시편에 흡수된 수분의 양을 측정한다.After casting the specimen for evaluation of moisture resistance in the heated mold (temperature = 175 ℃, curing time = 120sec), the specimen (width = 4cm, length = 2cm, thickness = 0.4cm) was produced and then 6 hours in an oven at 175 ℃. After curing after curing, the mixture was left for 24 hours in a heated / pressurized saturated steam bath (121 ° C., 2 atm) to measure the amount of moisture absorbed by the specimen.
(3)내크랙성(3) Crack resistance
TAB(칩사이즈 16mm×2mm, 30리드)패키지를 캐스팅방법으로 봉지하여 금형온도 175℃로 성형한 다음 175℃의 오븐에서 6시간 후경화시킨 후 가열/가압 포화수증기조(121℃, 2기압)에서 24시간 방치하여 시편에 수분을 흡수시킨 다음 열충격시험기(온도 사이클 테스터 -65℃×15분, 150℃×15분)를 이용하여 200사이클후 패키지 크랙을 측정하여 표 1에 나타내었다.TAB (chip size 16mm × 2mm, 30 lead) package is sealed by molding method and molded at mold temperature of 175 ℃ and then cured in oven at 175 ℃ for 6 hours, then heated / pressurized steam tank (121 ℃, 2 atmospheres) After leaving for 24 hours to absorb moisture in the specimen, the package cracks were measured after 200 cycles using a thermal shock tester (temperature cycle tester -65 ℃ 15 minutes, 150 ℃ 15 minutes) are shown in Table 1.
(4)성형성 평가(4) Formation evaluation
TAB(칩사이즈 16mm×2mm, 30리드)패키지를 캐스팅방법으로 봉지하여 온도 175℃, 경화시간 120sec의 금형조건으로 시편을 30개씩 조립하여 패키지 표면의 성형불량을 평가하였다.TAB (chip size 16mm × 2mm, 30 lead) packages were sealed by casting, and 30 pieces of the specimens were assembled under mold conditions with a temperature of 175 ° C. and a curing time of 120 sec.
이상에서 살펴본 바와 같이 입자크기가 서로 상이하고 일정크기 이하의 무기충전제를 사용한 에폭시 수지 조성물을 반도체 소자에 적용함으로써 내크랙성이 우수하고 성형성이 우수한 효과를 얻을 수 있게된다.As described above, by applying the epoxy resin composition using an inorganic filler having a particle size different from each other and having a predetermined size or less to a semiconductor device, an effect excellent in crack resistance and moldability can be obtained.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019970071841A KR100384477B1 (en) | 1997-12-22 | 1997-12-22 | Liquid epoxy resin composition for semiconductor device package |
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| KR1019970071841A KR100384477B1 (en) | 1997-12-22 | 1997-12-22 | Liquid epoxy resin composition for semiconductor device package |
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