KR100364236B1 - Epoxy resin composition for sealing of semiconductor device - Google Patents

Epoxy resin composition for sealing of semiconductor device Download PDF

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KR100364236B1
KR100364236B1 KR1019970071836A KR19970071836A KR100364236B1 KR 100364236 B1 KR100364236 B1 KR 100364236B1 KR 1019970071836 A KR1019970071836 A KR 1019970071836A KR 19970071836 A KR19970071836 A KR 19970071836A KR 100364236 B1 KR100364236 B1 KR 100364236B1
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epoxy resin
formula
resin composition
semiconductor device
weight
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KR19990052373A (en
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윤 곡 박
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제일모직주식회사
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C08L63/04—Epoxynovolacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group

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Abstract

PURPOSE: Provided is an epoxy resin composition for sealing semiconductor device which shows excellent heat resistance, moisture resistance, crack resistance, and molding property. CONSTITUTION: The composition comprising an epoxy resin, a hardener, an inorganic flame retardant, and an additive, is characterized in that the epoxy resin is a mixture of compound of formula 1 and compound of formula 2 or 3, and the amount of the mixture is 5-25 wt%. In the formula 1, n is an integer of 0-5, and in the formula 3, n is an integer of 1-3. The composition uses a biphenyl epoxy resin and a polyfunctional epoxy resin in place of typical ortho-cresol novolac epoxy resin.

Description

반도체소자 봉지용 에폭시수지 조성물Epoxy Resin Compositions for Semiconductor Device Encapsulation

본 발명은 반도체소자 봉지용 에폭시수지 조성물에 관한 것으로, 좀 더 상세하게로는 일반적으로 사용되고 있는 올소크레졸 노볼락형 에폭시수지 대신에 바이페닐 에폭시수지와 다기능 에폭시수지를 사용한 표면실장 방식에 적합하고 내열성, 내습성, 내크랙성 및 성형성이 우수한 반도체소자 봉지용 에폭시수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition for semiconductor device encapsulation, and more particularly, it is suitable for a surface mount method using biphenyl epoxy resin and a multifunctional epoxy resin instead of an allocresol novolac type epoxy resin which is generally used. The present invention relates to an epoxy resin composition for sealing semiconductor devices excellent in moisture resistance, crack resistance and moldability.

최근 반도체 제조기술의 발달로 반도체 칩(CHIP)의 집적도가 급속하게 증가함과 아울러 반도체 실장방식이 핀삽입형에서 표면실장 방식으로 변화되어 소형화, 경량화 추세로 가고 있고 이에 따른 반도체소자 봉지용 에폭시수지 조성물의 주요 물성중 내열성 및 내크랙(CRACK)성이 크게 요구되고 있는 현실이다. 반도체소자 봉지용 에폭시수지 조성물은 통상 올소크레졸노볼락형 에폭시수지나 비스페놀 A형 에폭시수지를 주축으로 여기에 경화제, 충진제, 난연제 및 기타 첨가제를 혼합하여 조성되는 것이나 내열성, 내습성, 내크랙성 등에 문제가 많아 최근에는 에폭시수지로 바이페닐 에폭시를 사용하는 예가 일본특개 평 04-120957호에 개시되어 있다. 그러나 이 방식에 따르면 내습성 및 내크랙성은 어느정도 좋아지고 있지만 성형성이 아직도 불량한 결점이 있었다.With the recent development of semiconductor manufacturing technology, the degree of integration of semiconductor chip (CHIP) is rapidly increasing, and the semiconductor mounting method is changed from pin insertion type to surface mounting method, which is becoming smaller and lighter. Among the major physical properties of the heat resistance and crack resistance (CRACK) is a great demand. The epoxy resin composition for encapsulating semiconductor devices is usually composed of an allocresol novolak type epoxy resin or a bisphenol A type epoxy resin mixed with a hardening agent, a filler, a flame retardant, and other additives, and heat resistance, moisture resistance, crack resistance, and the like. Since there are many problems, the example of using biphenyl epoxy as an epoxy resin is disclosed by Unexamined-Japanese-Patent No. 04-120957. However, according to this method, the moisture resistance and the crack resistance are improved to some extent, but the moldability is still poor.

따라서 본 발명은 종래의 반도체소자 봉지용 에폭시수지 조성물에서 주축이 되는 에폭시수지를 새롭게 대체함으로써 내습성, 내크랙성 및 성형성이 우수한 에폭시수지 조성물을 새롭게 제안하고자 하는 것이다.Therefore, the present invention is to propose a new epoxy resin composition excellent in moisture resistance, crack resistance and moldability by newly replacing the epoxy resin which is the main axis in the conventional epoxy resin composition for semiconductor device encapsulation.

즉, 본 발명은 에폭시수지, 경화제, 무기충진제, 난연제, 무기난연제 및 첨가제로 조성되는 반도체소자 봉지용 에폭시수지 조성물로서, 상기 에폭시수지 성분으로 하기 화학식 1의 화합물과 하기 화학식 2 또는 3의 화합물을 함께 5 내지 25 중량%로 사용하는 것을 특징으로 하는 반도체소자 봉지용 에폭시수지 조성물을 제공하는 것이다.That is, the present invention is an epoxy resin composition for encapsulating a semiconductor device, which is composed of an epoxy resin, a curing agent, an inorganic filler, a flame retardant, an inorganic flame retardant, and an additive, wherein the compound of Formula 1 and a compound of Formula 2 or 3 It is to provide an epoxy resin composition for sealing a semiconductor device, characterized in that used in 5 to 25% by weight together.

Figure kpo00003
Figure kpo00003

(상기식에서 n은 0 내지 5의 정수이다)(Where n is an integer of 0 to 5)

Figure kpo00004
Figure kpo00004

Figure kpo00005
Figure kpo00005

(상기식에서 n은 1 내지 3의 정수이다)(Where n is an integer of 1 to 3)

본 발명에서 특징적으로 채택되는 에폭시 화합물은 화학식 1의 에폭시화합물에 화학식 2 또는 3의 에폭시 화합물을 함께 병용하는 것이 특히 중요하며 이들 합계량이 5∼25 중량%의 범위인 것이 좋고 기타 구성물의 함량은 특별히 한정하지 않지만 바람직한 조성비의 일예를 들면 다음과 같다.The epoxy compound characteristically adopted in the present invention is particularly important to use the epoxy compound of formula (2) or (3) together with the epoxy compound of formula (1), the total amount of which is in the range of 5 to 25% by weight, and the content of other components is particularly Although not limited, an example of a preferable composition ratio is as follows.

조성물Composition 중량부Parts by weight

에폭시수지(화학식 1 + 2 또는 3) : 5∼25 중량%Epoxy resin (Formula 1 + 2 or 3): 5 to 25% by weight

경화제 : 3∼15 중량%Curing agent: 3-15 wt%

무기충진제 : 60∼90 중량%Inorganic Filler: 60 ~ 90 wt%

난연제 : 1∼3 중량%Flame retardant: 1-3 wt%

무기난연제 : 1∼3 중량%Inorganic flame retardant: 1-3 wt%

첨가제 : 0.2∼15 중량%Additive: 0.2-15 wt%

본 발명에서 경화제는 고순도의 노블락형 페놀수지, 산무수물(ACID ANHYDRIDE) 을 사용하는 것이 좋고, 무기충진제로는 고순도의 천연실리카, 합성실리카, 알루미나 등을 들수있고, 난연제로는 브롬으로 치환된 에폭시수지가 좋다. 본 발명에서 무기난연제로는 삼산화안티몬계 또는 사산화안티몬계가 바람직하고, 첨가제는 일반적으로 사용되는 이형제, 착색제, 결합제, 개질제, 경화촉진제 등이 첨가될 수 있다.In the present invention, it is preferable to use a high-purity nobloc phenol resin and an acid anhydride (ACID ANHYDRIDE), and the inorganic filler may include high-purity natural silica, synthetic silica, alumina, and the like, and flame retardant is epoxy substituted with bromine. Resin is good. In the present invention, the inorganic flame retardant is preferably antimony trioxide or antimony tetraoxide, and an additive may include a commonly used release agent, colorant, binder, modifier, curing accelerator, and the like.

이하에 실시예를 들어 본 발명을 더욱 설명한다.An Example is given to the following and this invention is further demonstrated to it.

실시예 1Example 1

에폭시수지 조성물중 에폭시수지로 화학식 1의 수지(n = 2)와 화학식 2의 수지를 사용하되 기타의 구성분 및 그 조성 비율은 표 2와 같이 평량하여 분쇄혼합기를 사용하여 미분쇄 상태로 만든 다음, 용융혼합기(Kneader)를 이용 100℃에서 130℃이내에서 용융혼합한후 상온으로 냉각 시키고 분말상태로 분쇄하여 에폭시수지조성물을 제조한다.Use epoxy resin (n = 2) and resin of formula 2 as epoxy resin in the epoxy resin composition, but the other components and their composition ratios are weighed as shown in Table 2 to make a finely ground state using a grinding mixer. After melt mixing at 100 ° C. to 130 ° C. using a kneader, the mixture is cooled to room temperature and pulverized into a powder to prepare an epoxy resin composition.

상기와 같이 제조된 에폭시수지조성물을 이용하여 가열이송성형기(압력 = 70 ㎏/㎠, 온도 = 175℃, 경화시간 = 120sec)에서 유동성(SPIRAL FLOW), 내습성, 내열성시험용 시편을 제작한 다음 175℃의 오븐에서 6시간 후경화 시킨 다음, 이 시편을 이용하여 물성을 측정하여 표 1에 나타내었다.Using the epoxy resin composition prepared as described above in the heat transfer molding machine (pressure = 70 ㎏ / ㎠, temperature = 175 ℃, curing time = 120sec) to prepare a test specimen for fluid flow (SPIRAL FLOW), moisture resistance, heat resistance test 175 After curing for 6 hours in an oven at ℃, it was shown in Table 1 by measuring the physical properties using this specimen.

실시예 2Example 2

에폭시수지 조성물중 에폭시수지를 화학식 1의 수지(n = 2)와 화학식 3의 수지(n = 3)를 사용하고, 조성 비율을 표 1과 같이 평량하여 실시예 1과 같은 방법으로 실시하였다.Epoxy resin in the epoxy resin composition was carried out in the same manner as in Example 1 by using the resin of the formula (1 = 2) and the resin of the formula (n = 3), and the composition ratio as basis.

비교예 1Comparative Example 1

에폭시수지 조성물중 에폭시수지를 화학식 2의 수지를 사용하고, 조성비율을 표 1과 같이 평량하여 실시예 1과 같은 방법으로 실시하였다.Epoxy resin in the epoxy resin composition was carried out in the same manner as in Example 1 by using a resin of the formula (2), and the composition ratio is basis weight as shown in Table 1.

비교예 2Comparative Example 2

에폭시수지 조성물중 에폭시수지를 화학식 3의 수지(n = 3)를 사용하고, 조성비율을 표 1과 같이 평량하여 실시예 1과 같은 방법으로 실시하였다.Epoxy resin in the epoxy resin composition was carried out in the same manner as in Example 1 by using a resin of the general formula (3) (n = 3), and the composition ratio was basis weight as shown in Table 1.

구 분division 조성비Creation costs 실시예Example 비교예Comparative example 1One 22 1One 22 구조식 1Structural Formula 1 중량%weight% 44 44 ** 구조식 2Structural Formula 2 중량%weight% 44 ** 88 ** 구조식 3Structural Formula 3 중량%weight% ** 44 ** 99 브룹에폭시Bruupepoxy 중량%weight% 1One 1One 1One 1One 페놀수지Phenolic Resin 중량%weight% 66 66 66 55 실리카Silica 중량%weight% 8282 8282 8282 8282 첨가제additive 중량%weight% 2.82.8 2.82.8 2.82.8 2.82.8 경화촉진제Curing accelerator 중량%weight% 0.20.2 0.20.2 0.20.2 0.20.2 물성 평가 결과Property evaluation result SPIRAL FLOWSPIRAL FLOW inchinch 3232 2828 3838 2222 수분 흡수율Water absorption wt%wt% 0.210.21 0.280.28 0.260.26 0.350.35 내크랙성Crack resistance 불량수/시편수Defective / Sample 0 / 500/50 2 / 502/50 5 / 505/50 27 / 5027/50 성형성(VOID)Formability (VOID) 불량수/시편수Defective / Sample 1 / 5001/500 0 / 5000/500 28 / 50028/500 12 / 50012/500

각 시험 항목별 측정 방법은 다음과 같다.The measurement method for each test item is as follows.

* 유동성 측정(SPIRAL FLOW)* SPIRAL FLOW

EMMI-I-66측정 방법에 준하여 가열이송성형기(압력 = 70㎏/㎠, 온도 = 175℃, 경화시간 = 90sec)에서 SPIRAL FLOW MOLD로 측정한다.Measure by SPIRAL FLOW MOLD in heat transfer molding machine (pressure = 70㎏ / ㎠, temperature = 175 ℃, curing time = 90sec) according to EMMI-I-66 measuring method.

* 내습성 측정* Moisture resistance measurement

가열이송성형기(압력 = 70㎏/㎠, 온도 = 175℃, 경화시간 = 120sec)에서 내습성 평가용 시편을 MOLD(가로=4㎝, 세로=2㎝, 두께=0.4㎝)로 제작하고, 175℃의 오븐에서 6시간 후경화 시킨 다음, 이 시편을 가열/가압 포화수증기조(121℃, 2기압)에서 24시간 방치하여 시편에 흡수된 수분의량을 측정한다.In the heat transfer molding machine (pressure = 70㎏ / ㎠, temperature = 175 ℃, curing time = 120sec), the specimen for moisture resistance evaluation was made with MOLD (width = 4cm, length = 2cm, thickness = 0.4cm), and 175 After 6 hours of curing in an oven at 0 ° C., the specimen was allowed to stand for 24 hours in a heated / pressurized saturated steam bath (121 ° C., 2 atm) to measure the amount of moisture absorbed in the specimen.

* 내크랙성 측정* Crack resistance measurement

반도체소자 봉지용 MOLD(44-SOP)로 가열이송성형기(압력 = 70㎏/㎠, 온도 = 175℃, 경화시간 = 120sec)에서 시편을 제작한 후, 175℃의 오븐에서 6시간 후경화 시킨 다음, 이 시편을 이용하여 가열/가압 포화수증기조(121℃, 2기압)에서 48시간 방치하여 시편에 수분을 흡수시킨 다음, 열충격시험기(Temperature Cycle Tester -65℃ × 15분, 150℃ × 15분)를 이용하여 200 Cycle후 Package Crack을 측정하였다.After fabricating the specimen in a heat transfer molding machine (pressure = 70㎏ / ㎠, temperature = 175 ℃, curing time = 120sec) with MOLD (44-SOP) for semiconductor device encapsulation, it was cured after 6 hours in the oven at 175 ℃. Using this specimen, the specimen was allowed to stand for 48 hours in a heated / pressurized saturated steam tank (121 ℃, 2 atmospheres) to absorb water, and then a thermal shock tester (Temperature Cycle Tester -65 ℃ × 15 minutes, 150 ℃ × 15 minutes). Package crack was measured after 200 cycles.

* 성형성 평가* Moldability Evaluation

반도체소자 봉지용 MOLD(44-SOP)로 가열이송성형기(압력 = 70㎏/㎠, 온도 = 175℃, 경화시간 = 120sec)에서 시편을 500개씩 조립하여 Package 표면의 성형불량을 평가하였다.Molding defects on the surface of the package were evaluated by assembling 500 specimens in a heat transfer molding machine (pressure = 70 kg / cm 2, temperature = 175 ° C., curing time = 120 sec) with a semiconductor device encapsulation mold (44-SOP).

이상에서 상술한 바와 같이 본 발명의 수지조성물을 이용하여 반도체소자를 봉지할 경우 내크랙성과 성형성이 아주 우수하게 됨을 알수있다.As described above, when encapsulating the semiconductor device using the resin composition of the present invention, it can be seen that the crack resistance and the moldability are excellent.

Claims (2)

에폭시수지, 경화제, 무기충진제, 난연제, 무기난연제 및 첨가제로 조성되는 반도체소자 봉지용 에폭시수지 조성물로서, 상기 에폭시수지 성분으로 하기 화학식 1의 화합물과 하기 화학식 2 또는 3의 화합물을 함께 5 내지 25 중량%로 사용하는 것을 특징으로 하는 반도체소자 봉지용 에폭시수지 조성물An epoxy resin composition for encapsulating a semiconductor device comprising an epoxy resin, a curing agent, an inorganic filler, a flame retardant, an inorganic flame retardant, and an additive, wherein the epoxy resin component includes 5 to 25 weight of the compound of Formula 1 and the compound of Formula 2 or 3 below. Epoxy resin composition for encapsulation of semiconductor devices, characterized in that used in% 화학식 1Formula 1
Figure kpo00006
Figure kpo00006
 (상기식에서 n은 0 내지 5의 정수이다)(Where n is an integer of 0 to 5) 화학식 2Formula 2
Figure kpo00007
Figure kpo00007
 화학식 3Formula 3
Figure kpo00008
Figure kpo00008
 (상기식에서 n은 1 내지 3의 정수이다)(Where n is an integer of 1 to 3) 상기 화학식1, 2 또는 3으로 나타낼 수 있는 에폭시수지 5 내지 25중량%,5 to 25% by weight of an epoxy resin represented by Formula 1, 2 or 3, 경화제 3 내지 15중량%,3 to 15 wt% of a curing agent, 무기충전제 60 내지 90중량%,Inorganic filler 60 to 90% by weight, 난연제 1 내지 3중량%,1 to 3% by weight of flame retardant, 무기난연제 1 내지 3중량%,1 to 3% by weight of inorganic flame retardant, 첨가제 0.2 내지 15중량%0.2-15 wt% of additive 로 이루어지는 것을 특징으로 하는 반도체 소자 봉지용 에폭시수지 조성물.Epoxy resin composition for sealing a semiconductor device, characterized in that consisting of.
KR1019970071836A 1997-12-22 1997-12-22 Epoxy resin composition for sealing of semiconductor device KR100364236B1 (en)

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