KR100679368B1 - Epoxy resin composition for sealing semiconductor element and semiconductor device using the same - Google Patents
Epoxy resin composition for sealing semiconductor element and semiconductor device using the same Download PDFInfo
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- KR100679368B1 KR100679368B1 KR1019990067916A KR19990067916A KR100679368B1 KR 100679368 B1 KR100679368 B1 KR 100679368B1 KR 1019990067916 A KR1019990067916 A KR 1019990067916A KR 19990067916 A KR19990067916 A KR 19990067916A KR 100679368 B1 KR100679368 B1 KR 100679368B1
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- epoxy resin
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- flame retardant
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- 239000003822 epoxy resin Substances 0.000 title claims abstract description 31
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000000203 mixture Substances 0.000 title claims abstract description 26
- 238000007789 sealing Methods 0.000 title abstract description 4
- 239000003063 flame retardant Substances 0.000 claims abstract description 14
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000011256 inorganic filler Substances 0.000 claims abstract description 8
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000003795 chemical substances by application Substances 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 239000012796 inorganic flame retardant Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052794 bromium Inorganic materials 0.000 claims description 5
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical group O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000003086 colorant Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 125000001246 bromo group Chemical group Br* 0.000 claims description 2
- 239000007822 coupling agent Substances 0.000 claims description 2
- 239000005350 fused silica glass Substances 0.000 claims description 2
- 239000003607 modifier Substances 0.000 claims description 2
- 239000006082 mold release agent Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 3
- 239000004593 Epoxy Substances 0.000 abstract description 6
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 239000004848 polyfunctional curative Substances 0.000 abstract description 3
- -1 Encapsulation Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 7
- 238000001721 transfer moulding Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Epoxy Resins (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
본 발명은 하기 화학식 1로 표시되는 에폭시 수지 5∼15중량%, 하기 화학식 2로 표시되는 화합물 및 하기 화학식 3으로 표시되는 화합물을 각각 단독으로 또는 당량비 기준으로 1:9∼9:1의 비율로 혼합한 경화제 3∼15중량%, 무기 충진제 70∼90중량%, 난연제 1.5∼6중량% 및 나머지는 기타 첨가제로 이루어진 반도체소자 봉지용 에폭시 수지 조성물 및 이를 이용한 반도체 장치에 관한 것으로, 본 발명에 의한 에폭시 수지 조성물을 반도체소자 봉지용으로 사용하는 경우 성형성 및 휨성이 양호하게 된다.The present invention is 5 to 15% by weight of the epoxy resin represented by the following formula (1), the compound represented by the following formula (2) and the compound represented by the formula (3), each alone or in an equivalent ratio of 1: 9-9: 1 3-15% by weight of the mixed hardener, 70-90% by weight of the inorganic filler, 1.5-6% by weight of the flame retardant, and the rest are related to the epoxy resin composition for encapsulating a semiconductor element and a semiconductor device using the same. When the epoxy resin composition is used for sealing semiconductor elements, moldability and warpage property are good.
화학식 1Formula 1
여기서, n은 0 내지 10의 정수이다.Here, n is an integer of 0-10.
화학식 2Formula 2
여기서, n은 0 내지 10의 정수이다.Here, n is an integer of 0-10.
화학식 3Formula 3
여기서, n은 0 내지 10의 정수이다.Here, n is an integer of 0-10.
에폭시, 반도체, 봉지, 경화제, 휨성Epoxy, Semiconductor, Encapsulation, Hardener, Flexibility
Description
본 발명은 반도체소자 봉지용 에폭시 수지 조성물 및 이를 이용한 반도체 장치에 관한 것으로, 보다 상세하게는 특정구조의 에폭시 및 페놀 수지를 사용함으로써 성형성 및 휨성이 우수한 반도체소자, 특히 BGA(Ball Grid Array) 패키지 봉지용 에폭시 수지 조성물 및 이를 사용하는 반도체 장치에 관한 것이다.The present invention relates to an epoxy resin composition for encapsulating a semiconductor device and a semiconductor device using the same. More specifically, by using an epoxy and a phenol resin having a specific structure, a semiconductor device having excellent moldability and warpage property, in particular, a ball grid array (BGA) package It relates to an epoxy resin composition for sealing and a semiconductor device using the same.
최근 반도체 제조기술의 발달로 반도체 칩의 집적도가 급속하게 증가하는 동시에 반도체 실장방식도 핀삽입형에서 반도체 패키지의 소형화, 경량화가 가능한 표면실장 방식으로 변화되고 있다. 특히 I/O(Input/Output) 핀수의 증가로 인해 패키지의 리드(Lead) 수가 증가하고, 단위면적당 차지하는 리드의 수는 계속 증가하는 추세이다.Recently, with the development of semiconductor manufacturing technology, the degree of integration of semiconductor chips is rapidly increasing, and the semiconductor mounting method is also changed from a pin insertion type to a surface mounting method capable of miniaturization and light weight of a semiconductor package. In particular, as the number of I / O pins increases, the number of leads in a package increases, and the number of leads per unit area continues to increase.
이러한 경향에 따라, 기존의 리드 프레임 대신 PCB (Printed Circuit Board) 기판을 적용하고, 볼(Ball)을 이용하여 I/O 핀 역할을 가능하게 하는 BGA(Ball Grid Array) 패키지가 등장하였다. 이러한 BGA 패키지는 PCB 기판을 사용함으로 써 반도체 조립공정에서 기존의 절단(Trim), 리드 형성(Form), 도금공정을 없애고, 납땜볼 형성공정 하나로 대체하는 효과를 주고, PCB 기판 하부의 납땜볼 간격이 리드 간격보다 넓어져 생산공정상 유리하고 멀티핀 패키징에 적합하다. 그러나, BGA가 비스말레이미드 트리아진(BT) 기판이나 유리강화 에폭시 기판의 한쪽면만 봉지됨으로써 제조된 패키지는 바이메탈 구조를 갖게 되어, 기판과 봉지재 간의 수축계수 차이로 인해 휨 현상이 발생하여 볼 형성이나 보드 실장시 문제점이 발생한다.According to this trend, a Ball Grid Array (BGA) package has been introduced, which uses a PCB (Printed Circuit Board) substrate instead of a conventional lead frame and enables a role of I / O pins using balls. This BGA package eliminates the existing trim, lead, and plating processes in the semiconductor assembly process by using a PCB board, and replaces one solder ball forming process. It is wider than the lead spacing, which is advantageous for the production process and suitable for multi-pin packaging. However, a package manufactured by BGA encapsulating only one side of a bismaleimide triazine (BT) substrate or a glass-reinforced epoxy substrate has a bimetal structure, resulting in bending due to a difference in shrinkage coefficient between the substrate and the encapsulant. Or board mounting problems occur.
이를 위해, 기존의 반도체 봉지용 에폭시 수지와 경화제, 예컨대 하기 화학식 4로 나타낼 수 있는 오르소 크레졸 노볼락(OCN)형 에폭시 수지와 함께 페놀 노볼락형 경화제와 하기 화학식 5로 나타낼 수 있는 자일록형 경화제를 적용할 경우에는 낮은 유리전이온도 (Tg)에 의한 내열성 저하 및 휨성이 불량한 문제점이 있었다.To this end, an epoxy resin for a semiconductor encapsulation and a curing agent, such as an ortho cresol novolac (OCN) type epoxy resin represented by the following general formula (4), a phenol novolak type curing agent and a xylox type curing agent represented by the following general formula (5) In the case of applying, there was a problem of poor heat resistance and warpage due to low glass transition temperature (Tg).
여기서, n은 0 내지 10의 정수이다.Here, n is an integer of 0-10.
여기서, n은 0 내지 10의 정수이다.Here, n is an integer of 0-10.
이에, 본 발명자는 상기와 같은 패키지 휨성을 해결하기 위해 특정 구조를 가지는 에폭시 수지와 페놀 수지를 혼합한 에폭시 수지 조성물로 반도체소자를 봉지하면 성형성 및 휨성이 우수하게 됨을 발견하였고, 본 발명은 이에 기초하여 완성되었다.Thus, the inventors have found that when the semiconductor device is encapsulated with an epoxy resin composition in which an epoxy resin having a specific structure and a phenol resin are mixed to solve the package warpage as described above, the present invention provides excellent moldability and warpage. Completed on the basis of
따라서, 본 발명의 목적은 성형성 및 휨성이 우수한 반도체소자 봉지용 에폭시 수지 조성물을 제공하는데 있다.Accordingly, an object of the present invention is to provide an epoxy resin composition for sealing a semiconductor device excellent in moldability and warpage.
본 발명의 다른 목적은 상기 에폭시 수지 조성물을 이용하여 봉지한 반도체 장치를 제공하는데 있다.Another object of the present invention is to provide a semiconductor device sealed using the epoxy resin composition.
상기 목적을 달성하기 위한 본 발명의 에폭시 수지 조성물은 하기 화학식 1로 표시되는 에폭시 수지 5∼15중량%, 하기 화학식 2로 표시되는 화합물 및 하기 화학식 3으로 표시되는 화합물로 이루어진 군으로부터 선택된 하나 또는 이를 혼합한 경화제 3∼15중량%, 무기충진제 70∼90중량%, 난연제 1.5∼6중량% 및 나머지는 기타 첨가제로 이루어진다. Epoxy resin composition of the present invention for achieving the above object is one selected from the group consisting of 5-15% by weight of an epoxy resin represented by the following formula (1), a compound represented by the formula (2) and a compound represented by the formula (3) 3-15 weight% of mixed hardeners, 70-90 weight% of inorganic fillers, 1.5-6 weight% of flame retardants, and the remainder are other additives.
여기서, n은 0 내지 10의 정수이다.Here, n is an integer of 0-10.
여기서, n은 0 내지 10의 정수이다.Here, n is an integer of 0-10.
여기서, n은 0 내지 10의 정수이다.Here, n is an integer of 0-10.
상기 다른 목적을 달성하기 위한 본 발명의 반도체 장치는 기판 및 접착층을 이용하여 기판상에 고정된 반도체 소자로 이루어지고, 기판에 장착된 반도체 소자가 본 발명의 에폭시 수지 조성물로 봉지되는 것으로 달성된다.The semiconductor device of the present invention for achieving the above another object is achieved by a semiconductor device fixed on a substrate using a substrate and an adhesive layer, the semiconductor device mounted on the substrate is sealed with the epoxy resin composition of the present invention.
이하, 본 발명을 좀 더 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in more detail.
본 발명의 에폭시 수지 조성물은 에폭시 수지 5∼15중량%, 경화제 3∼15중량%, 무기 충진제 70∼90중량%, 난연제 1.5∼6중량%, 착색제 0.9∼1.1중량%, 경화촉진제 0.1∼1.0중량% 및 기타 첨가제 1∼5중량% 등으로 조성된 것을 사용할 수 있다.The epoxy resin composition of the present invention is 5 to 15% by weight epoxy resin, 3 to 15% by weight curing agent, 70 to 90% by weight inorganic filler, 1.5 to 6% by weight flame retardant, 0.9 to 1.1% by weight colorant, 0.1 to 1.0 weight of curing accelerator %, And 1-5 weight% of other additives, etc. can be used.
본 발명에서 사용된 상기 에폭시 수지는 하기 화학식 1로 표시된다.The epoxy resin used in the present invention is represented by the following formula (1).
화학식 1Formula 1
여기서, n은 0 내지 10의 정수이다.Here, n is an integer of 0-10.
상기 에폭시 수지는 다관능(Multi-functional) 에폭시 수지가 바람직하고, 사용량은 5 내지 15중량%가 바람직하다. 만일 상기 에폭시 수지의 함량이 5중량% 미만이면 본 발명에서 목적하는 성형성 및 휨성을 달성할 수 없게 되고, 15중량%를 초과하는 경우에는 첨가량에 따른 상승적 효과를 기대하기 어렵다.The epoxy resin is preferably a multi-functional epoxy resin, the amount is preferably 5 to 15% by weight. If the content of the epoxy resin is less than 5% by weight it is impossible to achieve the moldability and warpage properties desired in the present invention, when it exceeds 15% by weight it is difficult to expect a synergistic effect according to the addition amount.
본 발명에서 사용되는 경화제는 하기 화학식 2로 표시되는 다관능(Multi-functional)성 페놀수지 및 하기 화학식 3으로 표시되는 노볼락형 페놀수지를 각각 단독으로 또는 당량비 기준으로 1:9∼9:1의 비율로 함께 사용하고, 전체 경화제 사용량은 3∼15중량%가 바람직하다. 만일, 상기 경화제의 총함량이 3중량% 미만이 면, 본 발명에서 목적하는 성형성 및 휨성을 달성할 수 없게 되고, 15중량%를 초과하는 경우에는 첨가량에 따른 상승적 효과를 기대하기 어렵다.The curing agent used in the present invention is 1: 9 to 9: 1 each of a multi-functional phenol resin represented by the following formula (2) and a novolak-type phenol resin represented by the following formula (3) alone or on an equivalent ratio basis: 3 to 15% by weight of the total amount of the curing agent used is preferably used together. If the total content of the curing agent is less than 3% by weight, the moldability and warpage properties desired in the present invention cannot be achieved, and when the total content of the curing agent exceeds 15% by weight, it is difficult to expect a synergistic effect depending on the amount added.
화학식 2Formula 2
여기서, n은 0 내지 10의 정수이다.Here, n is an integer of 0-10.
화학식 3Formula 3
여기서, n은 0 내지 10의 정수이고, 특히 n=2의 분자가 38∼40% 함유된 것을 특징으로 한다.N is an integer of 0 to 10, and is characterized in that 38 to 40% of molecules of n = 2 are contained.
본 발명에서 사용되는 무기 충진제로는 고순도의 천연실리카, 합성실리카, 용융실리카 및 알루미나로 이루어진 군으로부터 하나 또는 그 이상 선택되며, 구형 용융실리카가 전체 무기 충진제의 80중량% 이상으로 이루어진 것이 바람직하다. 만일, 상기 구형 용융실리카의 함량이 80중량% 미만으로 첨가되면 본 발명에서 목적하는 성형성을 달성할 수 없게 된다.The inorganic filler used in the present invention is selected from the group consisting of high purity natural silica, synthetic silica, fused silica and alumina, and it is preferable that the spherical molten silica is made up of 80% by weight or more of the total inorganic filler. If the content of the spherical molten silica is added in less than 80% by weight it is impossible to achieve the moldability desired in the present invention.
본 발명에서 사용되는 난연제는 수지 난연제와 무기 난연제로 이루어진다. 수지 난연제로는 브롬으로 치환된 에폭시 수지를 사용하며, 무기 난연제로는 삼산 화안티몬(Sb2O3) 또는 사산화안티몬(Sb2O4) 등을 사용할 수 있다. 상기 수지 난연제의 사용량은 0.5∼3중량%로, 만일 0.5중량% 미만으로 사용되면, 봉지재에 요구되는 난연규격 (UL-94,V-0)을 만족하기 위하여 과량의 무기 난연제를 사용해야 하는 문제가 있고, 3중량%를 초과하여 사용하면, 수지 난연제에 함유된 브롬 등의 할로겐 원소에 의한 본딩 패드 부식의 문제가 발생할 수 있다. 또한, 상기 무기 난연제의 사용량은 1.0∼3중량%가 바람직하며, 만일 1.0중량% 미만으로 사용되면, 과량의 수지 난연제를 사용함으로써 함유된 브롬 등의 할로겐 원소에 의한 본딩 패드 부식의 가능성이 문제가 있고, 3중량%를 초과하여 사용하면, 전체 조성물의 흐름성 저하로 인해 성형성불량 (void) 수 및 크기가 증가하여 성형성이 불량할 수 있다.The flame retardant used in the present invention consists of a resin flame retardant and an inorganic flame retardant. As the flame retardant, an epoxy resin substituted with bromine may be used, and as the inorganic flame retardant, antimony trioxide (Sb 2 O 3 ) or antimony tetraoxide (Sb 2 O 4 ) may be used. The use amount of the resin flame retardant is 0.5 to 3% by weight, if less than 0.5% by weight, the problem of using an excessive amount of inorganic flame retardant to meet the flame retardant standards (UL-94, V-0) required for the encapsulation material When used in excess of 3% by weight, a problem of bonding pad corrosion due to halogen elements such as bromine contained in the resin flame retardant may occur. In addition, the amount of the inorganic flame retardant is preferably 1.0 to 3% by weight, and if less than 1.0% by weight, there is a problem of the possibility of corrosion of bonding pads by halogen elements such as bromine contained by using an excess of resin flame retardant. When used in excess of 3% by weight, the moldability may be poor due to an increase in the number and size of voids due to the deterioration of the flowability of the entire composition.
또한, 본 발명의 범위를 벗어나지 않는 한 일반적으로 적용되는 착색제, 경화촉진제, 이형제, 커플링제, 개질제 등을 첨가하는 것도 가능하다.It is also possible to add generally used colorants, curing accelerators, mold release agents, coupling agents, modifiers and the like, without departing from the scope of the present invention.
본 발명의 반도체 소자 봉지용 에폭시 수지 조성물은 상기와 같은 각 원료들을 믹싱 (mixing)한 후, 용융 혼합기(Kneader)를 이용하여 100∼130℃의 온도에서 용융 혼합하여 상온으로 냉각시키고 분말 상태로 분쇄한 후 블렌딩 공정을 거치는 일반적인 제조방법에 의하여 제조될 수 있다.The epoxy resin composition for encapsulation of the semiconductor device of the present invention is mixed with each of the raw materials as described above, and melt mixed at a temperature of 100 ~ 130 ℃ using a melt mixer (Kneader) to cool to room temperature and pulverized to a powder state After that, it may be prepared by a general manufacturing method through a blending process.
이하, 실시예를 통하여 본 발명을 좀 더 구체적으로 설명하지만, 하기 실시예에 본 발명의 범주가 한정되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples, but the scope of the present invention is not limited to the following Examples.
실시예 1∼3Examples 1 to 3
에폭시 수지로는 화학식 1과 같은 수지(에폭시 당량=170g/eq.)를 사용하고, 경화제로는 화학식 2와 같은 수지(수산화기 당량=100g/eq.) 및 화학식 3과 같은 수지(수산화기 당량=107g/eq.)를 표 1과 같이 계량하여 기타의 구성 원료들과 함께 믹싱한 후 용융 혼합, 냉각, 분쇄, 블렌딩 공정을 거치고 일정크기로 타정한다.As the epoxy resin, a resin (Epoxy equivalent = 170 g / eq.) Of the formula (1) was used, and as a curing agent, a resin such as the formula (2) (hydroxyl equivalent = 100 g / eq.) And a resin such as (3) (hydroxyl equivalent = 107 g) / eq.) is weighed as shown in Table 1 and mixed with the other ingredients, followed by melt mixing, cooling, grinding, and blending and tableting to a certain size.
상기와 같이 제조된 에폭시 수지 조성물을 이용하여 가열이송성형기 (압력=70kg/㎠, 온도=175℃, 경화시간=120초)에서 유동성(Spiral Flow)을 측정하고, 성형성(Void) 및 휨성 측정용 시편을 제작한 다음, 175℃에서 6시간동안 후경화시키고 물성을 측정하여 표 1에 나타내었다.Using the epoxy resin composition prepared as described above to measure the flow (Spiral Flow) in the heat transfer molding machine (pressure = 70kg / ㎠, temperature = 175 ℃, curing time = 120 seconds), measuring the moldability (Void) and warpage After preparing the test specimen, it was post-cured at 175 ℃ for 6 hours and measured in physical properties are shown in Table 1.
비교예 1∼2Comparative Examples 1 and 2
에폭시 수지로는 화학식 4와 같은 수지(에폭시 당량=199g/eq.)를 사용하고, 경화제로는 화학식 3과 같은 수지(수산화기 당량=107g/eq.) 및 화학식 5와 같은 수지(수산화기 당량=175g/eq.)를 사용하여 조성비율을 표 1과 같이 계량하여, 상기 실시예에서와 같은 방법으로 수행하였다.As the epoxy resin, a resin such as formula (4) (epoxy equivalent = 199 g / eq.) Was used, and as a curing agent, a resin such as formula (3) (hydroxyl equivalent = 107 g / eq.) And a resin such as formula (5) (hydroxyl equivalent = 175 g) / eq.) to measure the composition ratio as shown in Table 1, was carried out in the same manner as in the above example.
단위는 중량%임.Unit is weight percent.
각 물성별 측정 방법은 다음과 같다.The measuring method for each property is as follows.
1. 유동성(Spiral Flow) 측정1. Spiral Flow Measurement
EMMI-I-66 규격의 유동성 (Spiral Flow) 몰드를 이용하여 가열이송성형기 (압력=70kg/㎠, 온도=175℃, 경화시간=120초)로 측정한다.Measure with a heat transfer molding machine (pressure = 70kg / cm 2, temperature = 175 ° C, curing time = 120 seconds) using a Spiral Flow mold of the EMMI-I-66 standard.
2. 유리전이온도(Tg) 측정2. Glass Transition Temperature (Tg) Measurement
Tg 측정용 시편제작 몰드 (가로=60mm, 세로=10mm, 두께=3mm)를 이용하여 가열이송성형기 (압력=70kg/㎠, 온도=175℃, 경화시간=120초)에서 몰딩한 후, 175℃의 오븐에서 6시간동안 후경화시킨 다음, 시편을 절단(가로=10mm, 세로=10mm, 두께=3mm)하여 TMA(Thermo Mechanical Analyser)로 측정한다.After molding in a heat transfer molding machine (pressure = 70kg / cm 2, temperature = 175 ° C., curing time = 120 seconds) using a specimen fabrication mold for measuring Tg (width = 60mm, length = 10mm, thickness = 3mm), 175 ° C After 6 hours post-curing in the oven, the specimen was cut (width = 10mm, length = 10mm, thickness = 3mm) and measured by TMA (Thermo Mechanical Analyser).
3. 성형성 (Void) 평가3. Void Evaluation
PBGA(가로=35mm, 세로=35mm) 몰드를 이용하여 가열이송성형기 (압력=70kg/㎠, 온도=175℃, 경화시간=120초)에서 몰딩한 후, 패키지 표면에 20 mil이상 크기의 성형성이 없을 경우 양호로 판정한다.After molding in a heat transfer molding machine (pressure = 70kg / cm2, temperature = 175 ° C, curing time = 120 seconds) using a PBGA (width = 35mm, length = 35mm) mold, moldability of 20 mil or more on the package surface If no, it is determined to be good.
4. 휨성 (Warpage) 평가4. Warpage Evaluation
PBGA(가로=35mm, 세로=35mm) 몰드를 이용하여 가열이송성형기 (압력=70kg/㎠, 온도=175℃, 경화시간=120초)에서 몰딩한 후, 175℃의 오븐에서 6시간동안 후경화시킨 다음, 3차원 휨성 측정기를 이용하여 시편 20개의 휨성을 측정하여 휨성이 5.5 mil 이하일 때를 양호로 판정한다.After molding in a heat transfer molding machine (pressure = 70kg / cm 2, temperature = 175 ° C., curing time = 120 seconds) using a PBGA (width = 35 mm, length = 35 mm) mold, postcure for 6 hours in an oven at 175 ° C. After that, the bending property of 20 specimens was measured using a three-dimensional bending tester, and it was judged as good when the bending property was 5.5 mil or less.
이상에서 살펴본 바와 같이, 본 발명에서 특징적으로 첨가되는 에폭시 수지 및 경화제를 적용한 수지 조성물로 반도체소자를 봉지할 경우 성형성 및 휨성이 우수하며, 이를 이용하면 우수한 패키징 작업성의 반도체 장치를 수득하는 것이 가능하다.
As described above, when the semiconductor device is encapsulated with a resin composition to which the epoxy resin and the curing agent are added, which are characteristically added in the present invention, the moldability and the warpage property are excellent. Do.
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Citations (6)
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| KR950018252A (en) * | 1993-12-31 | 1995-07-22 | 김충세 | Epoxy Resin Compositions for Semiconductor Encapsulation |
| JPH08151505A (en) * | 1994-11-29 | 1996-06-11 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| KR960022791A (en) * | 1994-12-30 | 1996-07-18 | 김충세 | Fast curing epoxy resin composition for resin-sealed semiconductor devices |
| KR19990052368A (en) * | 1997-12-22 | 1999-07-05 | 유현식 | Epoxy Resin Compositions for Semiconductor Device Sealing |
| KR19990052373A (en) * | 1997-12-22 | 1999-07-05 | 유현식 | Epoxy Resin Compositions for Semiconductor Device Encapsulation |
| JPH11310688A (en) * | 1998-04-27 | 1999-11-09 | Shin Etsu Chem Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR950018252A (en) * | 1993-12-31 | 1995-07-22 | 김충세 | Epoxy Resin Compositions for Semiconductor Encapsulation |
| JPH08151505A (en) * | 1994-11-29 | 1996-06-11 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| KR960022791A (en) * | 1994-12-30 | 1996-07-18 | 김충세 | Fast curing epoxy resin composition for resin-sealed semiconductor devices |
| KR19990052368A (en) * | 1997-12-22 | 1999-07-05 | 유현식 | Epoxy Resin Compositions for Semiconductor Device Sealing |
| KR19990052373A (en) * | 1997-12-22 | 1999-07-05 | 유현식 | Epoxy Resin Compositions for Semiconductor Device Encapsulation |
| JPH11310688A (en) * | 1998-04-27 | 1999-11-09 | Shin Etsu Chem Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device |
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