KR19980043533A - Manufacturing equipment for semiconductor thin film formation - Google Patents

Abstract

A manufacturing apparatus for forming a semiconductor thin film for forming a thin film on a wafer by chemical vapor deposition (CVD) or physical vapor deposition (PVD).

The present invention relates to a plurality of process chambers (11a) to (11e) and an elevator (13), a load lock chamber (12) provided between the process chamber and the elevator, and a cassette provided to the load lock chamber and placed in an elevator. In a manufacturing apparatus for forming a semiconductor thin film comprising a robot 14 which takes out a wafer and transfers it to a process chamber, the process chambers 11a to 11e are mixed in a PVD process and a CVD process chamber in one facility. It is configured to perform PVD process and CVD process simultaneously.

Therefore, the equipment that was divided into two processes and equipment is integrated into one to maximize the efficiency of the equipment. The process is simplified, the productivity is improved, and the development of a new process is promoted.

Description

Manufacturing Equipment for Semiconductor Thin Film Formation

The present invention relates to a manufacturing apparatus for forming a semiconductor thin film, and more particularly, to a manufacturing apparatus for forming a semiconductor thin film, which forms a thin film on a wafer by chemical vapor deposition (CVD) or physical vapor deposition (PVD).

Generally, a thin film is formed on a wafer using a chemical vapor deposition method (hereinafter abbreviated as CVD) or a physical vapor deposition method (hereinafter abbreviated as PVD) as a separate facility. Consists of.

With the improvement of the process technology and the development of new wiring technology, the process that must be done simultaneously on one wafer is divided into two processes due to the separation of equipment.

In general, a device for forming a thin film on a wafer is provided with a plurality of process chambers on one side of the load lock chamber, and a plurality of elevators on the other side, from which the robot provided in the load lock chamber is placed on the elevator. The process is performed by taking the wafer out and loading and unloading it into the process chamber.

Therefore, in the conventional PVD process, all of the process chambers are used as a dedicated chamber for PVD process, and the process applied in such a dedicated facility is a diffusion barrier layer of titanium / titanium nitride (Ti / TiN), Al metal (Metal), and ARC cap ( Cap) The film was distributed to each facility, and in the case where some thin films were replaced by CVD, the equipment was moved and proceeded as well.

In the case of the CVD process, the process chambers are all used as CVD process chambers, and the process applied in these dedicated equipments was performed by dispersing the titanium / titanium nitride (Ti / TiN) and tungsten films as the diffusion barriers. Therefore, in the case of a film such as Ti / TiN / W / TiN, a complex process of PVD and CVD is inevitable.

However, since the PVD process equipment and the CVD process equipment are composed of separate equipments, the process has to be carried out while moving the equipment, and productivity has decreased. There was a problem that is increased.

The present invention is to solve the conventional problems as described above, an object thereof is to provide a manufacturing equipment for forming a semiconductor thin film that can maximize the efficiency of equipment by integrating the PVD process equipment and CVD process equipment as one.

Another object of the present invention is to provide a manufacturing apparatus for forming a semiconductor thin film which can improve productivity and facilitate the development of a new process by simplifying the thin film forming process.

1 is a plan view schematically showing a manufacturing apparatus for forming a semiconductor thin film of the present invention.

※ Explanation of symbols for main parts of drawing

11a to 11e: process chamber 12: load lock chamber

13: elevator 14: robot

The purpose of the present invention is to provide a plurality of process chambers and elevators, a load lock chamber provided between the process chambers and the elevator, and a robot installed in the load lock chamber to take wafers from the cassette placed in the elevator and transfer and transfer them to the process chambers. In the semiconductor thin film forming manufacturing apparatus, the process chamber is mixed with the PVD process and the CVD process chamber to perform the PVD process and the CVD process at the same time in one facility Can be achieved by

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 shows a semiconductor chemical vapor deposition apparatus according to the present invention, and a plurality of process chambers 11a to 11e for performing a process on a wafer are provided, and the process chambers 11a to 11e are provided. Since the high vacuum is maintained, the wafer is transferred into the process chamber 11 in the high vacuum state through the load lock chamber 12 in the standby state.

The load lock chamber 12 is provided with a robot 14 for transferring and conveying wafers. A plurality of elevators 13 are provided outside one side of the load lock chamber 12, and the elevators 13 A cassette on which a plurality of wafers are loaded is placed.

At this time, the plurality of process chambers 11a to 11e are installed by dividing the PVD process chamber and the CVD process chamber.

Therefore, for example, when forming a Ti / TiN / W / ARC TiN film, Ti is formed using a PVD process chamber, TiN is formed using a CVD process chamber, and W is formed using a CVD process chamber. In addition, ARC TiN can form a film in one step using a PVD process chamber.

In addition, in the case of changing the W film formation to Al CVD or PVD process, the process can be improved only by installing the process chamber without the addition of the entire facility.

As described above, according to the manufacturing equipment for forming a semiconductor thin film according to the present invention, the equipment that has been divided into two processes and equipment is integrated into one to maximize equipment efficiency, simplify the process, improve productivity, and develop new processes. Has the effect of promoting.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (1)

For forming a semiconductor thin film comprising a plurality of process chambers and elevators, a load lock chamber provided between the process chambers and the elevator, and a robot installed in the load lock chamber to take a wafer out of a cassette placed in the elevator and transfer and transfer the wafer to the process chamber. In manufacturing facilities, And forming the process chamber into a PVD process and a CVD process chamber to simultaneously perform the PVD process and the CVD process in a single facility.