KR102946015B1 - 반사형 마스크 블랭크 및 반사형 마스크 - Google Patents

반사형 마스크 블랭크 및 반사형 마스크

Info

Publication number
KR102946015B1
KR102946015B1 KR1020247006841A KR20247006841A KR102946015B1 KR 102946015 B1 KR102946015 B1 KR 102946015B1 KR 1020247006841 A KR1020247006841 A KR 1020247006841A KR 20247006841 A KR20247006841 A KR 20247006841A KR 102946015 B1 KR102946015 B1 KR 102946015B1
Authority
KR
South Korea
Prior art keywords
absorption layer
layer
reflective mask
reflective
mask blank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020247006841A
Other languages
English (en)
Korean (ko)
Other versions
KR20240033148A (ko
Inventor
히로요시 다나베
히로시 하네카와
도시유키 우노
Original Assignee
에이지씨 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 에이지씨 가부시키가이샤 filed Critical 에이지씨 가부시키가이샤
Publication of KR20240033148A publication Critical patent/KR20240033148A/ko
Application granted granted Critical
Publication of KR102946015B1 publication Critical patent/KR102946015B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
KR1020247006841A 2019-10-29 2020-10-26 반사형 마스크 블랭크 및 반사형 마스크 Active KR102946015B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019195856 2019-10-29
JPJP-P-2019-195856 2019-10-29
PCT/JP2020/040115 WO2021085382A1 (ja) 2019-10-29 2020-10-26 反射型マスクブランクおよび反射型マスク
KR1020227013985A KR102644109B1 (ko) 2019-10-29 2020-10-26 반사형 마스크 블랭크 및 반사형 마스크

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020227013985A Division KR102644109B1 (ko) 2019-10-29 2020-10-26 반사형 마스크 블랭크 및 반사형 마스크

Publications (2)

Publication Number Publication Date
KR20240033148A KR20240033148A (ko) 2024-03-12
KR102946015B1 true KR102946015B1 (ko) 2026-03-31

Family

ID=75715949

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020247006841A Active KR102946015B1 (ko) 2019-10-29 2020-10-26 반사형 마스크 블랭크 및 반사형 마스크
KR1020227013985A Active KR102644109B1 (ko) 2019-10-29 2020-10-26 반사형 마스크 블랭크 및 반사형 마스크

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020227013985A Active KR102644109B1 (ko) 2019-10-29 2020-10-26 반사형 마스크 블랭크 및 반사형 마스크

Country Status (5)

Country Link
US (2) US11914283B2 (https=)
JP (2) JP7363913B2 (https=)
KR (2) KR102946015B1 (https=)
TW (2) TWI830961B (https=)
WO (1) WO2021085382A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118302719A (zh) * 2021-11-24 2024-07-05 凸版光掩模有限公司 反射型光掩模坯以及反射型光掩模
TWI873570B (zh) * 2022-03-22 2025-02-21 德商卡爾蔡司Ｓｍｔ有限公司 用於光罩修復的方法和設備、微影物件及含有多個指令的電腦程式
JPWO2024029409A1 (https=) * 2022-08-03 2024-02-08

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007109968A (ja) 2005-10-14 2007-04-26 Hoya Corp 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
JP2010067757A (ja) * 2008-09-10 2010-03-25 Toppan Printing Co Ltd ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクブランク、ハーフトーン型ｅｕｖマスクの製造方法及びパターン転写方法
WO2017090485A1 (ja) * 2015-11-27 2017-06-01 Hoya株式会社 マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5266988U (https=) 1975-11-13 1977-05-18
JP3078163B2 (ja) * 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
JP4780847B2 (ja) * 2001-03-21 2011-09-28 Ｈｏｙａ株式会社 Ｅｕｖ露光用反射型マスクブランクおよびｅｕｖ露光用反射型マスク
EP2317383A3 (en) 2002-04-11 2011-12-28 HOYA Corporation Reflective mask blank, reflective mask and methods of producing the mask blank and the mask
JP4163038B2 (ja) 2002-04-15 2008-10-08 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスク並びに半導体の製造方法
JP5268988B2 (ja) 2010-04-30 2013-08-21 パナソニック株式会社 ２次元走査装置
JP6060636B2 (ja) * 2012-01-30 2017-01-18 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
KR20190100251A (ko) * 2017-01-17 2019-08-28 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 및 반도체 장치의 제조 방법
KR102429244B1 (ko) 2017-02-27 2022-08-05 호야 가부시키가이샤 마스크 블랭크 및 임프린트 몰드의 제조 방법
KR20240025717A (ko) * 2017-03-03 2024-02-27 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
JP6861095B2 (ja) 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
US11281088B2 (en) * 2017-04-17 2022-03-22 AGC Inc. Reflective mask blank for EUV exposure, and reflective mask
KR102666821B1 (ko) * 2017-07-05 2024-05-16 가부시키가이샤 토판 포토마스크 반사형 포토마스크 블랭크 및 반사형 포토마스크
US10890842B2 (en) * 2017-09-21 2021-01-12 AGC Inc. Reflective mask blank, reflective mask, and process for producing reflective mask blank

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007109968A (ja) 2005-10-14 2007-04-26 Hoya Corp 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
JP2010067757A (ja) * 2008-09-10 2010-03-25 Toppan Printing Co Ltd ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクブランク、ハーフトーン型ｅｕｖマスクの製造方法及びパターン転写方法
WO2017090485A1 (ja) * 2015-11-27 2017-06-01 Hoya株式会社 マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Also Published As

Publication number Publication date
US11914283B2 (en) 2024-02-27
KR20220086585A (ko) 2022-06-23
JPWO2021085382A1 (https=) 2021-05-06
TWI872898B (zh) 2025-02-11
JP2023175863A (ja) 2023-12-12
JP7544222B2 (ja) 2024-09-03
TW202121048A (zh) 2021-06-01
TWI830961B (zh) 2024-02-01
JP7363913B2 (ja) 2023-10-18
KR20240033148A (ko) 2024-03-12
TW202417978A (zh) 2024-05-01
US20240176225A1 (en) 2024-05-30
KR102644109B1 (ko) 2024-03-07
US12216398B2 (en) 2025-02-04
US20220236636A1 (en) 2022-07-28
WO2021085382A1 (ja) 2021-05-06

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