KR102938636B1 - 이미지 센서 - Google Patents

이미지 센서

Info

Publication number
KR102938636B1
KR102938636B1 KR1020210103290A KR20210103290A KR102938636B1 KR 102938636 B1 KR102938636 B1 KR 102938636B1 KR 1020210103290 A KR1020210103290 A KR 1020210103290A KR 20210103290 A KR20210103290 A KR 20210103290A KR 102938636 B1 KR102938636 B1 KR 102938636B1
Authority
KR
South Korea
Prior art keywords
photoelectric conversion
pattern
conversion region
substrate
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020210103290A
Other languages
English (en)
Korean (ko)
Other versions
KR20230021428A (ko
Inventor
박해용
최성수
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020210103290A priority Critical patent/KR102938636B1/ko
Priority to US17/735,605 priority patent/US12148780B2/en
Priority to CN202411366097.8A priority patent/CN119384054A/zh
Priority to CN202210556606.8A priority patent/CN115706121A/zh
Priority to JP2022119107A priority patent/JP2023024327A/ja
Publication of KR20230021428A publication Critical patent/KR20230021428A/ko
Priority to US18/812,624 priority patent/US20240413183A1/en
Priority to US18/817,453 priority patent/US20240421170A1/en
Priority to JP2024199324A priority patent/JP2025038903A/ja
Application granted granted Critical
Publication of KR102938636B1 publication Critical patent/KR102938636B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020210103290A 2021-08-05 2021-08-05 이미지 센서 Active KR102938636B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020210103290A KR102938636B1 (ko) 2021-08-05 2021-08-05 이미지 센서
US17/735,605 US12148780B2 (en) 2021-08-05 2022-05-03 Image sensor
CN202210556606.8A CN115706121A (zh) 2021-08-05 2022-05-19 图像传感器
CN202411366097.8A CN119384054A (zh) 2021-08-05 2022-05-19 图像传感器
JP2022119107A JP2023024327A (ja) 2021-08-05 2022-07-26 イメージセンサー
US18/812,624 US20240413183A1 (en) 2021-08-05 2024-08-22 Image sensor
US18/817,453 US20240421170A1 (en) 2021-08-05 2024-08-28 Image sensor
JP2024199324A JP2025038903A (ja) 2021-08-05 2024-11-14 イメージセンサー

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020210103290A KR102938636B1 (ko) 2021-08-05 2021-08-05 이미지 센서

Publications (2)

Publication Number Publication Date
KR20230021428A KR20230021428A (ko) 2023-02-14
KR102938636B1 true KR102938636B1 (ko) 2026-03-12

Family

ID=85152176

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210103290A Active KR102938636B1 (ko) 2021-08-05 2021-08-05 이미지 센서

Country Status (4)

Country Link
US (3) US12148780B2 (https=)
JP (2) JP2023024327A (https=)
KR (1) KR102938636B1 (https=)
CN (2) CN119384054A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7235016B2 (ja) * 2020-07-23 2023-03-08 株式会社三洋物産 遊技機
JP7235017B2 (ja) * 2020-07-23 2023-03-08 株式会社三洋物産 遊技機
US20240297193A1 (en) * 2023-03-01 2024-09-05 Visera Technologies Company Limited Image sensor and method for forming the same
KR20240176285A (ko) * 2023-06-15 2024-12-24 삼성전자주식회사 이미지 센서

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160056200A1 (en) * 2014-08-19 2016-02-25 Samsung Electronics Co., Ltd. Unit Pixels for Image Sensors and Pixel Arrays Comprising the Same
US20200075644A1 (en) * 2017-05-12 2020-03-05 Olympus Corporation Solid-state imaging device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101788124B1 (ko) 2010-07-07 2017-10-20 삼성전자 주식회사 후면 조사형 이미지 센서 및 그 제조 방법
JP6215246B2 (ja) * 2014-05-16 2017-10-18 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
KR102286109B1 (ko) 2014-08-05 2021-08-04 삼성전자주식회사 이미지 픽셀, 이를 포함하는 이미지 센서, 및 이를 포함하는 이미지 처리 시스템
KR102435995B1 (ko) 2015-08-07 2022-08-26 삼성전자주식회사 이미지 센서 및 이를 포함하는 이미지 처리 장치
JP7316764B2 (ja) 2017-05-29 2023-07-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
US10429954B2 (en) 2017-05-31 2019-10-01 Microsoft Technology Licensing, Llc Multi-stroke smart ink gesture language
WO2019093479A1 (ja) 2017-11-09 2019-05-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器
JP2019145544A (ja) 2018-02-16 2019-08-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子
JP2020013817A (ja) * 2018-07-13 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
KR102636358B1 (ko) * 2019-01-07 2024-02-13 삼성전자주식회사 이미지 센서
KR102651605B1 (ko) * 2019-01-11 2024-03-27 삼성전자주식회사 이미지 센서
US11195869B2 (en) 2019-09-05 2021-12-07 Sony Semiconductor Solutions Corporation Solid-state imaging device and imaging device with shared circuit elements
KR102721028B1 (ko) * 2019-11-08 2024-10-25 삼성전자주식회사 이미지 센서

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160056200A1 (en) * 2014-08-19 2016-02-25 Samsung Electronics Co., Ltd. Unit Pixels for Image Sensors and Pixel Arrays Comprising the Same
US20200075644A1 (en) * 2017-05-12 2020-03-05 Olympus Corporation Solid-state imaging device

Also Published As

Publication number Publication date
JP2023024327A (ja) 2023-02-16
US20230044820A1 (en) 2023-02-09
CN115706121A (zh) 2023-02-17
US20240421170A1 (en) 2024-12-19
KR20230021428A (ko) 2023-02-14
US12148780B2 (en) 2024-11-19
CN119384054A (zh) 2025-01-28
JP2025038903A (ja) 2025-03-19
US20240413183A1 (en) 2024-12-12

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