KR102906804B1 - 기판 처리 장치 및 기판 처리 장치의 제어 방법 - Google Patents

기판 처리 장치 및 기판 처리 장치의 제어 방법

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Publication number
KR102906804B1
KR102906804B1 KR1020210052351A KR20210052351A KR102906804B1 KR 102906804 B1 KR102906804 B1 KR 102906804B1 KR 1020210052351 A KR1020210052351 A KR 1020210052351A KR 20210052351 A KR20210052351 A KR 20210052351A KR 102906804 B1 KR102906804 B1 KR 102906804B1
Authority
KR
South Korea
Prior art keywords
frequency power
impedance
substrate processing
processing device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020210052351A
Other languages
English (en)
Korean (ko)
Other versions
KR20210132611A (ko
Inventor
잇코 다나카
리푸 리
히로시 츠지모토
아츠시 데라사와
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20210132611A publication Critical patent/KR20210132611A/ko
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Publication of KR102906804B1 publication Critical patent/KR102906804B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020210052351A 2020-04-27 2021-04-22 기판 처리 장치 및 기판 처리 장치의 제어 방법 Active KR102906804B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2020-078481 2020-04-27
JP2020078481 2020-04-27

Publications (2)

Publication Number Publication Date
KR20210132611A KR20210132611A (ko) 2021-11-04
KR102906804B1 true KR102906804B1 (ko) 2025-12-31

Family

ID=78222716

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210052351A Active KR102906804B1 (ko) 2020-04-27 2021-04-22 기판 처리 장치 및 기판 처리 장치의 제어 방법

Country Status (5)

Country Link
US (1) US11676800B2 (cg-RX-API-DMAC7.html)
JP (1) JP7433271B2 (cg-RX-API-DMAC7.html)
KR (1) KR102906804B1 (cg-RX-API-DMAC7.html)
CN (1) CN113643953B (cg-RX-API-DMAC7.html)
TW (1) TWI886259B (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7433271B2 (ja) * 2020-04-27 2024-02-19 東京エレクトロン株式会社 基板処理装置および基板処理装置の制御方法
JPWO2024024594A1 (cg-RX-API-DMAC7.html) * 2022-07-28 2024-02-01
US12706277B2 (en) * 2023-09-08 2026-08-11 Applied Materials, Inc. Radio-frequency (RF) matching network and tuning technique

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6197116B1 (en) * 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
US6446572B1 (en) * 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US7190119B2 (en) * 2003-11-07 2007-03-13 Lam Research Corporation Methods and apparatus for optimizing a substrate in a plasma processing system
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
KR100978886B1 (ko) * 2007-02-13 2010-08-31 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리방법 및 플라즈마처리장치
KR100870121B1 (ko) * 2007-04-19 2008-11-25 주식회사 플라즈마트 임피던스 매칭 방법 및 이 방법을 위한 매칭 시스템
JP5403151B2 (ja) * 2010-03-31 2014-01-29 東京エレクトロン株式会社 プラズマ処理装置用誘電体窓、プラズマ処理装置、およびプラズマ処理装置用誘電体窓の取り付け方法
JP5977509B2 (ja) * 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6099995B2 (ja) * 2013-01-24 2017-03-22 東京エレクトロン株式会社 試験装置
JP6162016B2 (ja) * 2013-10-09 2017-07-12 東京エレクトロン株式会社 プラズマ処理装置
JP6374647B2 (ja) * 2013-11-05 2018-08-15 東京エレクトロン株式会社 プラズマ処理装置
JP6312405B2 (ja) * 2013-11-05 2018-04-18 東京エレクトロン株式会社 プラズマ処理装置
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
US10544519B2 (en) * 2017-08-25 2020-01-28 Aixtron Se Method and apparatus for surface preparation prior to epitaxial deposition
JP2019186099A (ja) * 2018-04-12 2019-10-24 東京エレクトロン株式会社 プラズマ処理装置
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
KR102189323B1 (ko) * 2019-07-16 2020-12-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7433271B2 (ja) * 2020-04-27 2024-02-19 東京エレクトロン株式会社 基板処理装置および基板処理装置の制御方法
US11361941B2 (en) * 2020-06-19 2022-06-14 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP7661109B2 (ja) * 2020-07-31 2025-04-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
JP7433271B2 (ja) 2024-02-19
JP2021176193A (ja) 2021-11-04
CN113643953B (zh) 2026-07-10
TWI886259B (zh) 2025-06-11
US11676800B2 (en) 2023-06-13
CN113643953A (zh) 2021-11-12
KR20210132611A (ko) 2021-11-04
TW202145340A (zh) 2021-12-01
US20210335577A1 (en) 2021-10-28

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