KR102905047B1 - 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법 - Google Patents

플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법

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Publication number
KR102905047B1
KR102905047B1 KR1020247042040A KR20247042040A KR102905047B1 KR 102905047 B1 KR102905047 B1 KR 102905047B1 KR 1020247042040 A KR1020247042040 A KR 1020247042040A KR 20247042040 A KR20247042040 A KR 20247042040A KR 102905047 B1 KR102905047 B1 KR 102905047B1
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South Korea
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repetition
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KR1020247042040A
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English (en)
Korean (ko)
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KR20250025370A (ko
Inventor
치시오 코시미즈
Original Assignee
도쿄엘렉트론가부시키가이샤
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Priority to KR1020257042468A priority Critical patent/KR20260006694A/ko
Publication of KR20250025370A publication Critical patent/KR20250025370A/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020247042040A 2022-10-07 2023-09-26 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법 Active KR102905047B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257042468A KR20260006694A (ko) 2022-10-07 2023-09-26 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2022162643 2022-10-07
JPJP-P-2022-162643 2022-10-07
JP2022178137 2022-11-07
JPJP-P-2022-178137 2022-11-07
PCT/JP2023/034969 WO2024075596A1 (ja) 2022-10-07 2023-09-26 プラズマ処理装置、電源システム、及び周波数制御方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257042468A Division KR20260006694A (ko) 2022-10-07 2023-09-26 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법

Publications (2)

Publication Number Publication Date
KR20250025370A KR20250025370A (ko) 2025-02-21
KR102905047B1 true KR102905047B1 (ko) 2025-12-29

Family

ID=90608317

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020247042040A Active KR102905047B1 (ko) 2022-10-07 2023-09-26 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법
KR1020257042468A Pending KR20260006694A (ko) 2022-10-07 2023-09-26 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020257042468A Pending KR20260006694A (ko) 2022-10-07 2023-09-26 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법

Country Status (5)

Country Link
US (1) US20250132129A1 (https=)
JP (2) JP7612949B2 (https=)
KR (2) KR102905047B1 (https=)
CN (1) CN119923954A (https=)
WO (1) WO2024075596A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026053764A1 (ja) * 2024-09-05 2026-03-12 東京エレクトロン株式会社 プラズマ処理装置、電源システム、及びプラズマ処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210050185A1 (en) 2019-08-13 2021-02-18 Mks Instruments, Inc. Method And Apparatus To Enhance Sheath Formation, Evolution And Pulse To Pulse Stability In RF Powered Plasma Applications
JP2021534545A (ja) 2018-08-14 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5319150B2 (ja) 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021534545A (ja) 2018-08-14 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法
US20210050185A1 (en) 2019-08-13 2021-02-18 Mks Instruments, Inc. Method And Apparatus To Enhance Sheath Formation, Evolution And Pulse To Pulse Stability In RF Powered Plasma Applications

Also Published As

Publication number Publication date
KR20250025370A (ko) 2025-02-21
TW202431341A (zh) 2024-08-01
KR20260006694A (ko) 2026-01-13
JPWO2024075596A1 (https=) 2024-04-11
JP7612949B2 (ja) 2025-01-14
JP2025041838A (ja) 2025-03-26
US20250132129A1 (en) 2025-04-24
CN119923954A (zh) 2025-05-02
WO2024075596A1 (ja) 2024-04-11

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