KR102889330B1 - 양이온성 중합체 첨가제를 포함하는 연마 조성물 - Google Patents

양이온성 중합체 첨가제를 포함하는 연마 조성물

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Publication number
KR102889330B1
KR102889330B1 KR1020247011934A KR20247011934A KR102889330B1 KR 102889330 B1 KR102889330 B1 KR 102889330B1 KR 1020247011934 A KR1020247011934 A KR 1020247011934A KR 20247011934 A KR20247011934 A KR 20247011934A KR 102889330 B1 KR102889330 B1 KR 102889330B1
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KR
South Korea
Prior art keywords
polishing composition
ppm
polishing
abrasive particles
present
Prior art date
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KR1020247011934A
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English (en)
Korean (ko)
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KR20240054386A (ko
Inventor
브라이언 라이쓰
다나 사우터 반 네스
비에트 램
런허 지아
Original Assignee
씨엠씨 머티리얼즈 엘엘씨
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Publication of KR20240054386A publication Critical patent/KR20240054386A/ko
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Publication of KR102889330B1 publication Critical patent/KR102889330B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020247011934A 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물 Active KR102889330B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/639,598 US9758697B2 (en) 2015-03-05 2015-03-05 Polishing composition containing cationic polymer additive
US14/639,598 2015-03-05
PCT/US2016/020807 WO2016141259A1 (en) 2015-03-05 2016-03-04 Polishing composition containing cationic polymer additive
KR1020177027605A KR20170126960A (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177027605A Division KR20170126960A (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물

Publications (2)

Publication Number Publication Date
KR20240054386A KR20240054386A (ko) 2024-04-25
KR102889330B1 true KR102889330B1 (ko) 2025-11-21

Family

ID=56848223

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020247011934A Active KR102889330B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물
KR1020177027605A Ceased KR20170126960A (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물
KR1020257011315A Active KR102859558B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020177027605A Ceased KR20170126960A (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물
KR1020257011315A Active KR102859558B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물

Country Status (7)

Country Link
US (1) US9758697B2 (https=)
EP (1) EP3265525B1 (https=)
JP (1) JP6799000B2 (https=)
KR (3) KR102889330B1 (https=)
CN (1) CN107429120B (https=)
TW (1) TWI580770B (https=)
WO (1) WO2016141259A1 (https=)

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EP3408342B1 (en) * 2016-01-25 2024-03-06 CMC Materials LLC Polishing composition comprising cationic polymer additive
CN108117839B (zh) 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种具有高氮化硅选择性的化学机械抛光液
EP3612608A4 (en) * 2017-04-17 2021-01-20 Cabot Microelectronics Corporation SELF-STOPPING POLISHING COMPOSITION AND METHOD OF OXIDE BULK PLANARING
EP3638626B1 (en) 2017-06-15 2021-12-29 Rhodia Operations Cerium based particles
CN109251675B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251674B (zh) * 2017-07-13 2021-12-17 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251673A (zh) * 2017-07-13 2019-01-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251676B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN107932199A (zh) * 2017-12-11 2018-04-20 浙江三瑞铜业有限公司 一种金属工件的抛光方法
CN108048844A (zh) * 2017-12-11 2018-05-18 浙江三瑞铜业有限公司 一种金属抛光方法
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
JP7220522B2 (ja) * 2018-05-24 2023-02-10 株式会社バイコウスキージャパン 研磨砥粒、その製造方法、それを含む研磨スラリー及びそれを用いる研磨方法
JP7330676B2 (ja) * 2018-08-09 2023-08-22 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
WO2021076352A1 (en) 2019-10-15 2021-04-22 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
CN114599752A (zh) 2019-10-22 2022-06-07 Cmc材料股份有限公司 用于选择性化学机械抛光氧化物的组合物及方法
WO2021081145A1 (en) * 2019-10-22 2021-04-29 Cmc Materials, Inc. Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide
EP4065658B1 (en) 2019-11-26 2026-04-29 Rhodia Operations Liquid dispersion and powder of cerium based core-shell particles, process for producing the same and uses thereof in polishing
US12497541B2 (en) 2021-05-17 2025-12-16 Rhodia Operations Liquid dispersion and powder of cerium based core-shell particles, process for producing the same and uses thereof in polishing
KR20240062238A (ko) * 2022-10-28 2024-05-09 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법
WO2025132262A1 (en) 2023-12-21 2025-06-26 Rhodia Operations Aqueous dispersion comprising particles of cerium oxide with adsorbed polyoxometalates species thereon, process for producing the same and use thereof in polishing
WO2025190482A1 (en) 2024-03-13 2025-09-18 Rhodia Operations Cerium oxide particles with cotrolled microstructure

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WO2014011678A1 (en) 2012-07-11 2014-01-16 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials

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Also Published As

Publication number Publication date
WO2016141259A1 (en) 2016-09-09
KR102859558B1 (ko) 2025-09-15
JP6799000B2 (ja) 2020-12-09
TWI580770B (zh) 2017-05-01
CN107429120A (zh) 2017-12-01
KR20250053978A (ko) 2025-04-22
EP3265525A1 (en) 2018-01-10
US20160257853A1 (en) 2016-09-08
KR20170126960A (ko) 2017-11-20
KR20240054386A (ko) 2024-04-25
EP3265525A4 (en) 2018-08-29
JP2018513229A (ja) 2018-05-24
EP3265525B1 (en) 2020-04-15
CN107429120B (zh) 2019-10-01
US9758697B2 (en) 2017-09-12
TW201641662A (zh) 2016-12-01

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