CN107429120B - 包含阳离子型聚合物添加剂的抛光组合物 - Google Patents

包含阳离子型聚合物添加剂的抛光组合物 Download PDF

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Publication number
CN107429120B
CN107429120B CN201680013850.2A CN201680013850A CN107429120B CN 107429120 B CN107429120 B CN 107429120B CN 201680013850 A CN201680013850 A CN 201680013850A CN 107429120 B CN107429120 B CN 107429120B
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China
Prior art keywords
polishing composition
polishing
weight
functionalized
substrate
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CN201680013850.2A
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Chinese (zh)
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CN107429120A (zh
Inventor
B.赖斯
D.索特范内斯
林越
贾仁合
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201680013850.2A 2015-03-05 2016-03-04 包含阳离子型聚合物添加剂的抛光组合物 Active CN107429120B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/639,598 2015-03-05
US14/639,598 US9758697B2 (en) 2015-03-05 2015-03-05 Polishing composition containing cationic polymer additive
PCT/US2016/020807 WO2016141259A1 (en) 2015-03-05 2016-03-04 Polishing composition containing cationic polymer additive

Publications (2)

Publication Number Publication Date
CN107429120A CN107429120A (zh) 2017-12-01
CN107429120B true CN107429120B (zh) 2019-10-01

Family

ID=56848223

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680013850.2A Active CN107429120B (zh) 2015-03-05 2016-03-04 包含阳离子型聚合物添加剂的抛光组合物

Country Status (7)

Country Link
US (1) US9758697B2 (https=)
EP (1) EP3265525B1 (https=)
JP (1) JP6799000B2 (https=)
KR (3) KR20170126960A (https=)
CN (1) CN107429120B (https=)
TW (1) TWI580770B (https=)
WO (1) WO2016141259A1 (https=)

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IL271182B2 (en) 2017-06-15 2023-03-01 Rhodia Operations Cerium-based particles
CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251673A (zh) * 2017-07-13 2019-01-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251675B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251674B (zh) * 2017-07-13 2021-12-17 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251676B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN107932199A (zh) * 2017-12-11 2018-04-20 浙江三瑞铜业有限公司 一种金属工件的抛光方法
CN108048844A (zh) * 2017-12-11 2018-05-18 浙江三瑞铜业有限公司 一种金属抛光方法
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
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JP7330676B2 (ja) * 2018-08-09 2023-08-22 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
EP4045226B1 (en) * 2019-10-15 2024-01-03 FUJIFILM Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
WO2021081145A1 (en) * 2019-10-22 2021-04-29 Cmc Materials, Inc. Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide
JP7830317B2 (ja) 2019-10-22 2026-03-16 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー 選択的酸化物ｃｍｐのための組成物及び方法
CN114599754B (zh) 2019-11-26 2024-09-13 罗地亚经营管理公司 基于铈的核-壳颗粒的液体分散体和粉末、其生产方法及其在抛光中的用途
WO2022243280A1 (en) 2021-05-17 2022-11-24 Rhodia Operations Liquid dispersion and powder of cerium based core-shell particles, process for producing the same and uses thereof in polishing
KR20240062238A (ko) * 2022-10-28 2024-05-09 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법
WO2025132262A1 (en) 2023-12-21 2025-06-26 Rhodia Operations Aqueous dispersion comprising particles of cerium oxide with adsorbed polyoxometalates species thereon, process for producing the same and use thereof in polishing
WO2025190482A1 (en) 2024-03-13 2025-09-18 Rhodia Operations Cerium oxide particles with cotrolled microstructure

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CN1630697A (zh) * 2002-02-11 2005-06-22 卡伯特微电子公司 用于cmp的经正电性聚电解质处理的阴离子性研磨颗粒
CN1969024A (zh) * 2004-06-16 2007-05-23 卡伯特微电子公司 含钨基材的抛光方法
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Also Published As

Publication number Publication date
KR102859558B1 (ko) 2025-09-15
EP3265525B1 (en) 2020-04-15
WO2016141259A1 (en) 2016-09-09
US9758697B2 (en) 2017-09-12
JP2018513229A (ja) 2018-05-24
KR20250053978A (ko) 2025-04-22
EP3265525A4 (en) 2018-08-29
CN107429120A (zh) 2017-12-01
KR102889330B1 (ko) 2025-11-21
JP6799000B2 (ja) 2020-12-09
KR20170126960A (ko) 2017-11-20
US20160257853A1 (en) 2016-09-08
TWI580770B (zh) 2017-05-01
EP3265525A1 (en) 2018-01-10
TW201641662A (zh) 2016-12-01
KR20240054386A (ko) 2024-04-25

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