KR20170126960A - 양이온성 중합체 첨가제를 포함하는 연마 조성물 - Google Patents

양이온성 중합체 첨가제를 포함하는 연마 조성물 Download PDF

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Publication number
KR20170126960A
KR20170126960A KR1020177027605A KR20177027605A KR20170126960A KR 20170126960 A KR20170126960 A KR 20170126960A KR 1020177027605 A KR1020177027605 A KR 1020177027605A KR 20177027605 A KR20177027605 A KR 20177027605A KR 20170126960 A KR20170126960 A KR 20170126960A
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KR
South Korea
Prior art keywords
polishing composition
ppm
chemical mechanical
substrate
functionalized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR1020177027605A
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English (en)
Korean (ko)
Inventor
브라이언 라이쓰
다나 사우터 반 네스
비에트 램
런허 지아
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 캐보트 마이크로일렉트로닉스 코포레이션 filed Critical 캐보트 마이크로일렉트로닉스 코포레이션
Priority to KR1020247011934A priority Critical patent/KR102889330B1/ko
Priority to KR1020257011315A priority patent/KR102859558B1/ko
Publication of KR20170126960A publication Critical patent/KR20170126960A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020177027605A 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물 Ceased KR20170126960A (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020247011934A KR102889330B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물
KR1020257011315A KR102859558B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/639,598 2015-03-05
US14/639,598 US9758697B2 (en) 2015-03-05 2015-03-05 Polishing composition containing cationic polymer additive
PCT/US2016/020807 WO2016141259A1 (en) 2015-03-05 2016-03-04 Polishing composition containing cationic polymer additive

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020257011315A Division KR102859558B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물
KR1020247011934A Division KR102889330B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물

Publications (1)

Publication Number Publication Date
KR20170126960A true KR20170126960A (ko) 2017-11-20

Family

ID=56848223

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020177027605A Ceased KR20170126960A (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물
KR1020257011315A Active KR102859558B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물
KR1020247011934A Active KR102889330B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020257011315A Active KR102859558B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물
KR1020247011934A Active KR102889330B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물

Country Status (7)

Country Link
US (1) US9758697B2 (https=)
EP (1) EP3265525B1 (https=)
JP (1) JP6799000B2 (https=)
KR (3) KR20170126960A (https=)
CN (1) CN107429120B (https=)
TW (1) TWI580770B (https=)
WO (1) WO2016141259A1 (https=)

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KR20200121901A (ko) * 2018-03-14 2020-10-26 캐보트 마이크로일렉트로닉스 코포레이션 Sti 용도를 위한 cmp 조성물
WO2024091103A1 (ko) * 2022-10-28 2024-05-02 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법

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CN109251673A (zh) * 2017-07-13 2019-01-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251675B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251674B (zh) * 2017-07-13 2021-12-17 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251676B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN107932199A (zh) * 2017-12-11 2018-04-20 浙江三瑞铜业有限公司 一种金属工件的抛光方法
CN108048844A (zh) * 2017-12-11 2018-05-18 浙江三瑞铜业有限公司 一种金属抛光方法
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JP7330676B2 (ja) * 2018-08-09 2023-08-22 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
EP4045226B1 (en) * 2019-10-15 2024-01-03 FUJIFILM Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
WO2021081145A1 (en) * 2019-10-22 2021-04-29 Cmc Materials, Inc. Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide
JP7830317B2 (ja) 2019-10-22 2026-03-16 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー 選択的酸化物ｃｍｐのための組成物及び方法
CN114599754B (zh) 2019-11-26 2024-09-13 罗地亚经营管理公司 基于铈的核-壳颗粒的液体分散体和粉末、其生产方法及其在抛光中的用途
WO2022243280A1 (en) 2021-05-17 2022-11-24 Rhodia Operations Liquid dispersion and powder of cerium based core-shell particles, process for producing the same and uses thereof in polishing
WO2025132262A1 (en) 2023-12-21 2025-06-26 Rhodia Operations Aqueous dispersion comprising particles of cerium oxide with adsorbed polyoxometalates species thereon, process for producing the same and use thereof in polishing
WO2025190482A1 (en) 2024-03-13 2025-09-18 Rhodia Operations Cerium oxide particles with cotrolled microstructure

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200121901A (ko) * 2018-03-14 2020-10-26 캐보트 마이크로일렉트로닉스 코포레이션 Sti 용도를 위한 cmp 조성물
WO2024091103A1 (ko) * 2022-10-28 2024-05-02 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법

Also Published As

Publication number Publication date
KR102859558B1 (ko) 2025-09-15
EP3265525B1 (en) 2020-04-15
WO2016141259A1 (en) 2016-09-09
US9758697B2 (en) 2017-09-12
CN107429120B (zh) 2019-10-01
JP2018513229A (ja) 2018-05-24
KR20250053978A (ko) 2025-04-22
EP3265525A4 (en) 2018-08-29
CN107429120A (zh) 2017-12-01
KR102889330B1 (ko) 2025-11-21
JP6799000B2 (ja) 2020-12-09
US20160257853A1 (en) 2016-09-08
TWI580770B (zh) 2017-05-01
EP3265525A1 (en) 2018-01-10
TW201641662A (zh) 2016-12-01
KR20240054386A (ko) 2024-04-25

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