KR102871375B1 - 에지 링의 온도 및 바이어스 제어 - Google Patents

에지 링의 온도 및 바이어스 제어

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Publication number
KR102871375B1
KR102871375B1 KR1020237044837A KR20237044837A KR102871375B1 KR 102871375 B1 KR102871375 B1 KR 102871375B1 KR 1020237044837 A KR1020237044837 A KR 1020237044837A KR 20237044837 A KR20237044837 A KR 20237044837A KR 102871375 B1 KR102871375 B1 KR 102871375B1
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KR
South Korea
Prior art keywords
substrate
bias electrode
substrate support
pulse
base plate
Prior art date
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Application number
KR1020237044837A
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English (en)
Korean (ko)
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KR20240005210A (ko
Inventor
제임스 로저스
린잉 쿠이
라진더 딘사
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20240005210A publication Critical patent/KR20240005210A/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Thermistors And Varistors (AREA)
  • Mechanical Operated Clutches (AREA)
  • Physical Vapour Deposition (AREA)
KR1020237044837A 2019-02-01 2020-01-07 에지 링의 온도 및 바이어스 제어 Active KR102871375B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US16/265,186 2019-02-01
US16/265,186 US10784089B2 (en) 2019-02-01 2019-02-01 Temperature and bias control of edge ring
KR1020237015680A KR102781328B1 (ko) 2019-02-01 2020-01-07 에지 링의 온도 및 바이어스 제어
PCT/US2020/012503 WO2020159674A1 (en) 2019-02-01 2020-01-07 Temperature and bias control of edge ring

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020237015680A Division KR102781328B1 (ko) 2019-02-01 2020-01-07 에지 링의 온도 및 바이어스 제어

Publications (2)

Publication Number Publication Date
KR20240005210A KR20240005210A (ko) 2024-01-11
KR102871375B1 true KR102871375B1 (ko) 2025-10-14

Family

ID=71835755

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020237015680A Active KR102781328B1 (ko) 2019-02-01 2020-01-07 에지 링의 온도 및 바이어스 제어
KR1020217019894A Active KR102616707B1 (ko) 2019-02-01 2020-01-07 에지 링의 온도 및 바이어스 제어
KR1020237044837A Active KR102871375B1 (ko) 2019-02-01 2020-01-07 에지 링의 온도 및 바이어스 제어

Family Applications Before (2)

Application Number Title Priority Date Filing Date
KR1020237015680A Active KR102781328B1 (ko) 2019-02-01 2020-01-07 에지 링의 온도 및 바이어스 제어
KR1020217019894A Active KR102616707B1 (ko) 2019-02-01 2020-01-07 에지 링의 온도 및 바이어스 제어

Country Status (6)

Country Link
US (4) US10784089B2 (enExample)
JP (3) JP7323626B2 (enExample)
KR (3) KR102781328B1 (enExample)
CN (2) CN113039626B (enExample)
TW (2) TWI851651B (enExample)
WO (1) WO2020159674A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10784089B2 (en) 2019-02-01 2020-09-22 Applied Materials, Inc. Temperature and bias control of edge ring
US11894255B2 (en) * 2019-07-30 2024-02-06 Applied Materials, Inc. Sheath and temperature control of process kit
JP7308767B2 (ja) * 2020-01-08 2023-07-14 東京エレクトロン株式会社 載置台およびプラズマ処理装置
CN115605989A (zh) * 2020-06-29 2023-01-13 住友大阪水泥股份有限公司（Jp） 静电吸盘
US11781212B2 (en) * 2021-04-07 2023-10-10 Applied Material, Inc. Overlap susceptor and preheat ring
WO2022224795A1 (ja) * 2021-04-23 2022-10-27 東京エレクトロン株式会社 プラズマ処理装置及び基板処理方法
CN115440558A (zh) * 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
KR20230034452A (ko) * 2021-09-02 2023-03-10 주식회사 템네스트 반도체 웨이퍼 제조 장치 및 그 내식성 향상 방법
US20230145476A1 (en) * 2021-11-09 2023-05-11 Samsung Electronics Co., Ltd. Chuck assembly, fabrication system therewith, and method of fabricating semiconductor device using the same
CN120642034A (zh) * 2023-02-14 2025-09-12 东京毅力科创株式会社 等离子体处理装置
WO2025004933A1 (ja) * 2023-06-27 2025-01-02 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法及びプラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017228526A (ja) * 2016-06-22 2017-12-28 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 結合リング内に電極を使用することによってエッジ領域におけるイオンの方向性を制御するためのシステム及び方法
JP2018186263A (ja) * 2017-04-26 2018-11-22 東京エレクトロン株式会社 プラズマ処理装置
KR102781328B1 (ko) * 2019-02-01 2025-03-12 어플라이드 머티어리얼스, 인코포레이티드 에지 링의 온도 및 바이어스 제어

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4388455B2 (ja) 1996-03-01 2009-12-24 株式会社日立製作所 プラズマエッチング処理装置
US6039836A (en) 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6232236B1 (en) 1999-08-03 2001-05-15 Applied Materials, Inc. Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
JP5317424B2 (ja) * 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
US7758764B2 (en) 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
US8563619B2 (en) 2007-06-28 2013-10-22 Lam Research Corporation Methods and arrangements for plasma processing system with tunable capacitance
US20140034239A1 (en) 2008-07-23 2014-02-06 Applied Materials, Inc. Differential counter electrode tuning in a plasma reactor with an rf-driven workpiece support electrode
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
US20100018648A1 (en) 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US20140069584A1 (en) 2008-07-23 2014-03-13 Applied Materials, Inc. Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
KR101559913B1 (ko) 2009-06-25 2015-10-27 삼성전자주식회사 플라즈마 건식 식각 장치
JP5496568B2 (ja) 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2012104382A (ja) 2010-11-10 2012-05-31 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法
US20130107415A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US8808561B2 (en) 2011-11-15 2014-08-19 Lam Research Coporation Inert-dominant pulsing in plasma processing systems
US8988848B2 (en) 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
US9412579B2 (en) 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
JP6080571B2 (ja) * 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US9997381B2 (en) 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
US9449797B2 (en) 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
US9666466B2 (en) 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
JP6024921B2 (ja) 2013-11-01 2016-11-16 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
US10832931B2 (en) 2014-05-30 2020-11-10 Applied Materials, Inc. Electrostatic chuck with embossed top plate and cooling channels
US20170263478A1 (en) 2015-01-16 2017-09-14 Lam Research Corporation Detection System for Tunable/Replaceable Edge Coupling Ring
US10017857B2 (en) * 2015-05-02 2018-07-10 Applied Materials, Inc. Method and apparatus for controlling plasma near the edge of a substrate
JP6539113B2 (ja) 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US9761459B2 (en) 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US10854492B2 (en) 2015-08-18 2020-12-01 Lam Research Corporation Edge ring assembly for improving feature profile tilting at extreme edge of wafer
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US9984858B2 (en) 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US9881820B2 (en) 2015-10-22 2018-01-30 Lam Research Corporation Front opening ring pod
US10124492B2 (en) 2015-10-22 2018-11-13 Lam Research Corporation Automated replacement of consumable parts using end effectors interfacing with plasma processing system
US10062599B2 (en) 2015-10-22 2018-08-28 Lam Research Corporation Automated replacement of consumable parts using interfacing chambers
US20170115657A1 (en) 2015-10-22 2017-04-27 Lam Research Corporation Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ
US9601319B1 (en) 2016-01-07 2017-03-21 Lam Research Corporation Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process
US10109464B2 (en) * 2016-01-11 2018-10-23 Applied Materials, Inc. Minimization of ring erosion during plasma processes
US10685862B2 (en) 2016-01-22 2020-06-16 Applied Materials, Inc. Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device
CN108369922B (zh) * 2016-01-26 2023-03-21 应用材料公司 晶片边缘环升降解决方案
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US9966231B2 (en) 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
JP6877133B2 (ja) * 2016-03-28 2021-05-26 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
JP2018006299A (ja) * 2016-07-08 2018-01-11 東芝メモリ株式会社 プラズマ処理装置用処理対象支持台、プラズマ処理装置及びプラズマ処理方法
US20190122870A1 (en) * 2016-07-14 2019-04-25 Tokyo Electron Limited Focus ring replacement method and plasma processing system
US9947517B1 (en) * 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
KR102581226B1 (ko) * 2016-12-23 2023-09-20 삼성전자주식회사 플라즈마 처리 장치
JP6826955B2 (ja) 2017-06-14 2021-02-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US10763081B2 (en) 2017-07-10 2020-09-01 Applied Materials, Inc. Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
JP6974088B2 (ja) * 2017-09-15 2021-12-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR101980203B1 (ko) * 2017-10-30 2019-05-21 세메스 주식회사 지지 유닛 및 그를 포함하는 기판 처리 장치
KR20190055607A (ko) * 2017-11-15 2019-05-23 삼성전자주식회사 플라즈마 처리 장치
PL3711080T3 (pl) * 2017-11-17 2023-12-11 Aes Global Holdings, Pte. Ltd. Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża
JP7033441B2 (ja) 2017-12-01 2022-03-10 東京エレクトロン株式会社 プラズマ処理装置
JP7033907B2 (ja) * 2017-12-21 2022-03-11 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP7149068B2 (ja) * 2017-12-21 2022-10-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
CN109994355B (zh) * 2017-12-29 2021-11-02 中微半导体设备(上海)股份有限公司 一种具有低频射频功率分布调节功能的等离子反应器
JP6995008B2 (ja) 2018-04-27 2022-01-14 東京エレクトロン株式会社 基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017228526A (ja) * 2016-06-22 2017-12-28 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 結合リング内に電極を使用することによってエッジ領域におけるイオンの方向性を制御するためのシステム及び方法
JP2018186263A (ja) * 2017-04-26 2018-11-22 東京エレクトロン株式会社 プラズマ処理装置
KR102781328B1 (ko) * 2019-02-01 2025-03-12 어플라이드 머티어리얼스, 인코포레이티드 에지 링의 온도 및 바이어스 제어

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