KR102857373B1 - 광전 변환장치 - Google Patents

광전 변환장치

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Publication number
KR102857373B1
KR102857373B1 KR1020220115539A KR20220115539A KR102857373B1 KR 102857373 B1 KR102857373 B1 KR 102857373B1 KR 1020220115539 A KR1020220115539 A KR 1020220115539A KR 20220115539 A KR20220115539 A KR 20220115539A KR 102857373 B1 KR102857373 B1 KR 102857373B1
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KR
South Korea
Prior art keywords
semiconductor region
photoelectric conversion
conversion device
wiring
paragraph
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Application number
KR1020220115539A
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English (en)
Korean (ko)
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KR20230042641A (ko
Inventor
카즈히로 모리모토
준지 이와타
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20230042641A publication Critical patent/KR20230042641A/ko
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
KR1020220115539A 2021-09-22 2022-09-14 광전 변환장치 Active KR102857373B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2021-154432 2021-09-22
JP2021154432A JP7467401B2 (ja) 2021-09-22 2021-09-22 光電変換装置

Publications (2)

Publication Number Publication Date
KR20230042641A KR20230042641A (ko) 2023-03-29
KR102857373B1 true KR102857373B1 (ko) 2025-09-11

Family

ID=84817854

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020220115539A Active KR102857373B1 (ko) 2021-09-22 2022-09-14 광전 변환장치

Country Status (6)

Country Link
US (1) US20230097091A1 (enExample)
JP (2) JP7467401B2 (enExample)
KR (1) KR102857373B1 (enExample)
CN (1) CN115911068A (enExample)
DE (1) DE102022124035A1 (enExample)
GB (1) GB2613061A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022083067A (ja) * 2020-11-24 2022-06-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および撮像装置、並びに電子機器
JP7467401B2 (ja) * 2021-09-22 2024-04-15 キヤノン株式会社 光電変換装置
JP2023099395A (ja) * 2022-01-01 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、および機器
CN117690986B (zh) * 2024-02-01 2024-05-03 云南大学 高温工作单光子探测器、单光子焦平面探测器及制备方法
US12324252B1 (en) 2024-04-29 2025-06-03 Globalfoundries Singapore Pte. Ltd. Structures including a photodetector and multiple cathode contacts

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019033136A (ja) * 2017-08-04 2019-02-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
US20200020734A1 (en) * 2018-07-16 2020-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with sidewall protection and method of making same
WO2020189082A1 (ja) * 2019-03-19 2020-09-24 ソニーセミコンダクタソリューションズ株式会社 センサチップ、電子機器、及び測距装置
JP2020161716A (ja) * 2019-03-27 2020-10-01 キヤノン株式会社 光電変換装置、光電変換システム、および移動体

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018057975A1 (en) 2016-09-23 2018-03-29 Apple Inc. Stacked backside illuminated spad array
EP3462497B1 (en) * 2017-03-22 2025-10-15 Sony Semiconductor Solutions Corporation Imaging device and signal processing device
JP2020149987A (ja) * 2019-03-11 2020-09-17 ソニーセミコンダクタソリューションズ株式会社 光検出器
CN113519068B (zh) * 2019-03-29 2023-07-18 索尼半导体解决方案公司 固态摄像装置和电子设备
TWI867078B (zh) * 2019-11-19 2024-12-21 日商索尼半導體解決方案公司 固態攝像裝置及電子機器
JP2022096830A (ja) * 2020-12-18 2022-06-30 ソニーセミコンダクタソリューションズ株式会社 光検出器および電子機器
JP2022113371A (ja) * 2021-01-25 2022-08-04 ソニーセミコンダクタソリューションズ株式会社 光検出装置
JP2023002152A (ja) * 2021-06-22 2023-01-10 キヤノン株式会社 光電変換装置、光電変換装置の製造方法
JP7467401B2 (ja) * 2021-09-22 2024-04-15 キヤノン株式会社 光電変換装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019033136A (ja) * 2017-08-04 2019-02-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
US20200020734A1 (en) * 2018-07-16 2020-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with sidewall protection and method of making same
WO2020189082A1 (ja) * 2019-03-19 2020-09-24 ソニーセミコンダクタソリューションズ株式会社 センサチップ、電子機器、及び測距装置
JP2020161716A (ja) * 2019-03-27 2020-10-01 キヤノン株式会社 光電変換装置、光電変換システム、および移動体

Also Published As

Publication number Publication date
GB202213740D0 (en) 2022-11-02
JP7467401B2 (ja) 2024-04-15
CN115911068A (zh) 2023-04-04
US20230097091A1 (en) 2023-03-30
JP2023045838A (ja) 2023-04-03
TW202315105A (zh) 2023-04-01
GB2613061A (en) 2023-05-24
DE102022124035A1 (de) 2023-03-23
JP2024083450A (ja) 2024-06-21
KR20230042641A (ko) 2023-03-29

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