KR102813417B1 - 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법 - Google Patents

판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법 Download PDF

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KR102813417B1
KR102813417B1 KR1020237018486A KR20237018486A KR102813417B1 KR 102813417 B1 KR102813417 B1 KR 102813417B1 KR 1020237018486 A KR1020237018486 A KR 1020237018486A KR 20237018486 A KR20237018486 A KR 20237018486A KR 102813417 B1 KR102813417 B1 KR 102813417B1
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workpiece
hole
cutout
laser beam
introducing
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KR20230084606A (ko
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노르베르트 암브로지우스
로만 오슈트홀트
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엘피케이에프 레이저 앤드 일렉트로닉스 에스이
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Priority claimed from DE102014113339.0A external-priority patent/DE102014113339A1/de
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54—Glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Surface Treatment Of Glass (AREA)
  • Lead Frames For Integrated Circuits (AREA)
KR1020237018486A 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법 Active KR102813417B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257016919A KR102851778B1 (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102014113339.0 2014-09-16
DE102014113339.0A DE102014113339A1 (de) 2014-09-16 2014-09-16 Verfahren zur Erzeugung von Ausnehmungen in einem Material
DE102014116291 2014-11-07
DE102014116291.9 2014-11-07
PCT/DE2015/100333 WO2016041544A1 (de) 2014-09-16 2015-08-07 Verfahren zum einbringen mindestens einer ausnehmung oder einer durchbrechung in ein plattenförmiges werkstück
KR1020217005121A KR20210022773A (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020217005121A Division KR20210022773A (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257016919A Division KR102851778B1 (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법

Publications (2)

Publication Number Publication Date
KR20230084606A KR20230084606A (ko) 2023-06-13
KR102813417B1 true KR102813417B1 (ko) 2025-05-29

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Application Number Title Priority Date Filing Date
KR1020237018486A Active KR102813417B1 (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법
KR1020257016919A Active KR102851778B1 (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법
KR1020217005121A Ceased KR20210022773A (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법
KR1020177007041A Ceased KR20170044143A (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법
KR1020257028228A Pending KR20250133802A (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법
KR1020197015976A Ceased KR20190065480A (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법

Family Applications After (5)

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KR1020257016919A Active KR102851778B1 (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법
KR1020217005121A Ceased KR20210022773A (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법
KR1020177007041A Ceased KR20170044143A (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법
KR1020257028228A Pending KR20250133802A (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법
KR1020197015976A Ceased KR20190065480A (ko) 2014-09-16 2015-08-07 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법

Country Status (11)

Country Link
US (2) US11610784B2 (enExample)
EP (2) EP3195706B2 (enExample)
JP (2) JP6782692B2 (enExample)
KR (6) KR102813417B1 (enExample)
CN (1) CN107006128B (enExample)
ES (1) ES2923764T5 (enExample)
LT (1) LT3195706T (enExample)
MY (1) MY196621A (enExample)
SG (2) SG10201902331XA (enExample)
TW (1) TWI616939B (enExample)
WO (1) WO2016041544A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018100299A1 (de) * 2017-01-27 2018-08-02 Schott Ag Strukturiertes plattenförmiges Glaselement und Verfahren zu dessen Herstellung
KR102356415B1 (ko) 2017-03-06 2022-02-08 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 전자기 방사선과 후속 에칭공정을 이용해 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법
EP3592501B1 (de) 2017-03-06 2021-10-06 LPKF Laser & Electronics AG Verfahren zur herstellung einer technischen maske
DE102018110211A1 (de) 2018-04-27 2019-10-31 Schott Ag Verfahren zum Erzeugen feiner Strukturen im Volumen eines Substrates aus sprödharten Material
TWI678342B (zh) * 2018-11-09 2019-12-01 財團法人工業技術研究院 形成導角的切割方法
DE102020100848B4 (de) 2019-01-29 2023-07-27 Lpkf Laser & Electronics Aktiengesellschaft Verfahren zur Mikrostrukturierung eines Glassubstrats mittels Laserstrahlung
DE102019201347B3 (de) * 2019-02-01 2020-06-18 Lpkf Laser & Electronics Ag Herstellung von metallischen Leiterbahnen an Glas
KR20210124384A (ko) * 2019-02-08 2021-10-14 코닝 인코포레이티드 펄스형 레이저 빔 초점 라인 및 증기 에칭을 사용하여 투명 워크피스를 레이저 가공하는 방법
DE102019121827A1 (de) * 2019-08-13 2021-02-18 Trumpf Laser- Und Systemtechnik Gmbh Laserätzen mit variierender Ätzselektivität
CN113594014B (zh) * 2020-04-30 2024-04-12 中微半导体设备(上海)股份有限公司 零部件、等离子体反应装置及零部件加工方法
DE102020114195A1 (de) 2020-05-27 2021-12-02 Lpkf Laser & Electronics Aktiengesellschaft Verfahren zum Einbringen einer Ausnehmung in ein Substrat
DE102020118939A1 (de) * 2020-07-17 2022-01-20 Schott Ag Glaswafer und Glaselement für Drucksensoren
CN111799169B (zh) * 2020-07-17 2024-05-28 绍兴同芯成集成电路有限公司 一种飞秒激光结合hf湿蚀刻加工tgv的工艺
DE102020120370B3 (de) 2020-08-03 2022-02-03 Infineon Technologies Ag Mems-sensor mit partikelfilter und verfahren zu seiner herstellung
KR20220019158A (ko) 2020-08-06 2022-02-16 삼성디스플레이 주식회사 윈도우 및 이를 포함하는 표시장치
EP4011846A1 (en) 2020-12-09 2022-06-15 Schott Ag Method of structuring a glass element and structured glass element produced thereby
DE102021204675B4 (de) 2021-05-07 2023-05-17 Lpkf Laser & Electronics Se Vorrichtung und Verfahren zur Zellkultivierung
CN113510364B (zh) * 2021-07-28 2022-11-25 广东工业大学 一种基于激光辅助溶解的三维空腔结构的成型方法
EP4296244A1 (de) 2022-06-21 2023-12-27 LPKF Laser & Electronics SE Substratträger aus glas zur bearbeitung eines substrats und ein verfahren zu dessen herstellung
DE102022127259A1 (de) 2022-10-18 2024-04-18 Lpkf Laser & Electronics Aktiengesellschaft Verfahren sowie Vorrichtung zur Abbildung eines Strahls auf ein Objekt und Verfahren zum Einbringen einer Öffnung in ein Werkstück mittels dieses Verfahrens
DE102023125725A1 (de) * 2023-09-22 2025-03-27 Schott Ag Laser-strukturiertes optisches Element
DE102024105120A1 (de) 2024-02-23 2025-08-28 Lpkf Laser & Electronics Se Verfahren zur Integration und/oder Bearbeitung wenigstens eines Substrats sowie Substratstapel

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006142342A (ja) * 2004-11-22 2006-06-08 Sumitomo Electric Ind Ltd レーザ加工方法とレーザ加工装置
WO2012014720A1 (ja) * 2010-07-26 2012-02-02 浜松ホトニクス株式会社 レーザ加工方法
WO2012014718A1 (ja) * 2010-07-26 2012-02-02 浜松ホトニクス株式会社 インターポーザの製造方法
JP2013536081A (ja) * 2010-07-12 2013-09-19 フィレイザー ユーエスエー エルエルシー レーザーフィラメント形成による材料加工方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7091500A (en) * 1999-08-30 2001-03-26 Board Of Regents University Of Nebraska Lincoln Three-dimensional electrical interconnects
JP4880820B2 (ja) 2001-01-19 2012-02-22 株式会社レーザーシステム レーザ支援加工方法
JP4418282B2 (ja) 2004-03-31 2010-02-17 株式会社レーザーシステム レーザ加工方法
US9138913B2 (en) 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
JP2011218398A (ja) * 2010-04-08 2011-11-04 Fujikura Ltd 微細構造の形成方法、レーザー照射装置、及び基板
DE102010025966B4 (de) * 2010-07-02 2012-03-08 Schott Ag Interposer und Verfahren zum Herstellen von Löchern in einem Interposer
KR101825238B1 (ko) * 2010-07-26 2018-02-02 하마마츠 포토닉스 가부시키가이샤 광 흡수 기판의 제조 방법, 및 그것을 제조하기 위한 성형형의 제조 방법
KR102035619B1 (ko) * 2010-07-26 2019-12-16 하마마츠 포토닉스 가부시키가이샤 레이저 가공방법
US8933367B2 (en) 2011-02-09 2015-01-13 Sumitomo Electric Industries, Ltd. Laser processing method
US9346706B2 (en) 2012-11-29 2016-05-24 Corning Incorporated Methods of fabricating glass articles by laser damage and etching
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
JP6113529B2 (ja) * 2013-03-05 2017-04-12 株式会社ディスコ ウエーハの加工方法
DE102013223637B4 (de) 2013-11-20 2018-02-01 Trumpf Laser- Und Systemtechnik Gmbh Verfahren zum Behandeln eines lasertransparenten Substrats zum anschließenden Trennen des Substrats
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
EP3535221A1 (en) * 2016-11-04 2019-09-11 Corning Incorporated Micro-perforated panel systems, applications, and methods of making micro-perforated panel systems
US11344973B2 (en) * 2018-04-19 2022-05-31 Corning Incorporated Methods for forming holes in substrates

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006142342A (ja) * 2004-11-22 2006-06-08 Sumitomo Electric Ind Ltd レーザ加工方法とレーザ加工装置
JP2013536081A (ja) * 2010-07-12 2013-09-19 フィレイザー ユーエスエー エルエルシー レーザーフィラメント形成による材料加工方法
WO2012014720A1 (ja) * 2010-07-26 2012-02-02 浜松ホトニクス株式会社 レーザ加工方法
WO2012014718A1 (ja) * 2010-07-26 2012-02-02 浜松ホトニクス株式会社 インターポーザの製造方法

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