TWI616939B - 一種用於將至少一凹槽或一穿孔做入一板狀工件的方法 - Google Patents

一種用於將至少一凹槽或一穿孔做入一板狀工件的方法 Download PDF

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Publication number
TWI616939B
TWI616939B TW104129751A TW104129751A TWI616939B TW I616939 B TWI616939 B TW I616939B TW 104129751 A TW104129751 A TW 104129751A TW 104129751 A TW104129751 A TW 104129751A TW I616939 B TWI616939 B TW I616939B
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TW
Taiwan
Prior art keywords
workpiece
laser radiation
perforation
groove
along
Prior art date
Application number
TW104129751A
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English (en)
Chinese (zh)
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TW201621986A (zh
Inventor
諾伯特 雅姆伯修斯
Norbert AMBROSIUS
羅曼 歐斯拓特
Roman Ostholt
Original Assignee
Ｌｐｋｆ雷射暨電子股份公司
Lpkf Laser & Electronics Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=54072638&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI616939(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from DE102014113339.0A external-priority patent/DE102014113339A1/de
Application filed by Ｌｐｋｆ雷射暨電子股份公司, Lpkf Laser & Electronics Ag filed Critical Ｌｐｋｆ雷射暨電子股份公司
Publication of TW201621986A publication Critical patent/TW201621986A/zh
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Publication of TWI616939B publication Critical patent/TWI616939B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54—Glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Surface Treatment Of Glass (AREA)
  • Lead Frames For Integrated Circuits (AREA)
TW104129751A 2014-09-16 2015-09-09 一種用於將至少一凹槽或一穿孔做入一板狀工件的方法 TWI616939B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102014113339.0 2014-09-16
DE102014113339.0A DE102014113339A1 (de) 2014-09-16 2014-09-16 Verfahren zur Erzeugung von Ausnehmungen in einem Material
DE102014116291 2014-11-07
DE102014116291.9 2014-11-07

Publications (2)

Publication Number Publication Date
TW201621986A TW201621986A (zh) 2016-06-16
TWI616939B true TWI616939B (zh) 2018-03-01

Family

ID=54072638

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104129751A TWI616939B (zh) 2014-09-16 2015-09-09 一種用於將至少一凹槽或一穿孔做入一板狀工件的方法

Country Status (11)

Country Link
US (2) US11610784B2 (enExample)
EP (2) EP3195706B2 (enExample)
JP (2) JP6782692B2 (enExample)
KR (6) KR102813417B1 (enExample)
CN (1) CN107006128B (enExample)
ES (1) ES2923764T5 (enExample)
LT (1) LT3195706T (enExample)
MY (1) MY196621A (enExample)
SG (2) SG10201902331XA (enExample)
TW (1) TWI616939B (enExample)
WO (1) WO2016041544A1 (enExample)

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KR102356415B1 (ko) 2017-03-06 2022-02-08 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 전자기 방사선과 후속 에칭공정을 이용해 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법
EP3592501B1 (de) 2017-03-06 2021-10-06 LPKF Laser & Electronics AG Verfahren zur herstellung einer technischen maske
DE102018110211A1 (de) 2018-04-27 2019-10-31 Schott Ag Verfahren zum Erzeugen feiner Strukturen im Volumen eines Substrates aus sprödharten Material
TWI678342B (zh) * 2018-11-09 2019-12-01 財團法人工業技術研究院 形成導角的切割方法
DE102020100848B4 (de) 2019-01-29 2023-07-27 Lpkf Laser & Electronics Aktiengesellschaft Verfahren zur Mikrostrukturierung eines Glassubstrats mittels Laserstrahlung
DE102019201347B3 (de) * 2019-02-01 2020-06-18 Lpkf Laser & Electronics Ag Herstellung von metallischen Leiterbahnen an Glas
KR20210124384A (ko) * 2019-02-08 2021-10-14 코닝 인코포레이티드 펄스형 레이저 빔 초점 라인 및 증기 에칭을 사용하여 투명 워크피스를 레이저 가공하는 방법
DE102019121827A1 (de) * 2019-08-13 2021-02-18 Trumpf Laser- Und Systemtechnik Gmbh Laserätzen mit variierender Ätzselektivität
CN113594014B (zh) * 2020-04-30 2024-04-12 中微半导体设备(上海)股份有限公司 零部件、等离子体反应装置及零部件加工方法
DE102020114195A1 (de) 2020-05-27 2021-12-02 Lpkf Laser & Electronics Aktiengesellschaft Verfahren zum Einbringen einer Ausnehmung in ein Substrat
DE102020118939A1 (de) * 2020-07-17 2022-01-20 Schott Ag Glaswafer und Glaselement für Drucksensoren
CN111799169B (zh) * 2020-07-17 2024-05-28 绍兴同芯成集成电路有限公司 一种飞秒激光结合hf湿蚀刻加工tgv的工艺
DE102020120370B3 (de) 2020-08-03 2022-02-03 Infineon Technologies Ag Mems-sensor mit partikelfilter und verfahren zu seiner herstellung
KR20220019158A (ko) 2020-08-06 2022-02-16 삼성디스플레이 주식회사 윈도우 및 이를 포함하는 표시장치
EP4011846A1 (en) 2020-12-09 2022-06-15 Schott Ag Method of structuring a glass element and structured glass element produced thereby
DE102021204675B4 (de) 2021-05-07 2023-05-17 Lpkf Laser & Electronics Se Vorrichtung und Verfahren zur Zellkultivierung
CN113510364B (zh) * 2021-07-28 2022-11-25 广东工业大学 一种基于激光辅助溶解的三维空腔结构的成型方法
EP4296244A1 (de) 2022-06-21 2023-12-27 LPKF Laser & Electronics SE Substratträger aus glas zur bearbeitung eines substrats und ein verfahren zu dessen herstellung
DE102022127259A1 (de) 2022-10-18 2024-04-18 Lpkf Laser & Electronics Aktiengesellschaft Verfahren sowie Vorrichtung zur Abbildung eines Strahls auf ein Objekt und Verfahren zum Einbringen einer Öffnung in ein Werkstück mittels dieses Verfahrens
DE102023125725A1 (de) * 2023-09-22 2025-03-27 Schott Ag Laser-strukturiertes optisches Element
DE102024105120A1 (de) 2024-02-23 2025-08-28 Lpkf Laser & Electronics Se Verfahren zur Integration und/oder Bearbeitung wenigstens eines Substrats sowie Substratstapel

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US20130029093A1 (en) * 2010-04-08 2013-01-31 Fujikura Ltd. Method of forming microstructure, laser irradiation device, and substrate

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US20130029093A1 (en) * 2010-04-08 2013-01-31 Fujikura Ltd. Method of forming microstructure, laser irradiation device, and substrate
US20120142186A1 (en) * 2010-07-26 2012-06-07 Hamamatsu Photonics K.K. Method for manufacturing interposer

Also Published As

Publication number Publication date
KR20250079054A (ko) 2025-06-04
ES2923764T5 (en) 2025-10-09
EP3195706B1 (de) 2022-06-01
WO2016041544A1 (de) 2016-03-24
US20220223434A1 (en) 2022-07-14
KR102851778B1 (ko) 2025-09-01
US20170256422A1 (en) 2017-09-07
CN107006128B (zh) 2020-05-19
JP6782692B2 (ja) 2020-11-11
KR20190065480A (ko) 2019-06-11
ES2923764T3 (es) 2022-09-30
US11610784B2 (en) 2023-03-21
EP3195706B2 (de) 2025-05-14
KR20170044143A (ko) 2017-04-24
EP3195706A1 (de) 2017-07-26
LT3195706T (lt) 2022-08-10
KR20250133802A (ko) 2025-09-08
CN107006128A (zh) 2017-08-01
SG11201702091WA (en) 2017-04-27
TW201621986A (zh) 2016-06-16
JP2020185613A (ja) 2020-11-19
EP4061101A1 (de) 2022-09-21
SG10201902331XA (en) 2019-04-29
KR20230084606A (ko) 2023-06-13
KR20210022773A (ko) 2021-03-03
KR102813417B1 (ko) 2025-05-29
JP7049404B2 (ja) 2022-04-06
MY196621A (en) 2023-04-23
JP2017534458A (ja) 2017-11-24

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