KR102796438B1 - 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스 - Google Patents

감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스 Download PDF

Info

Publication number
KR102796438B1
KR102796438B1 KR1020237006903A KR20237006903A KR102796438B1 KR 102796438 B1 KR102796438 B1 KR 102796438B1 KR 1020237006903 A KR1020237006903 A KR 1020237006903A KR 20237006903 A KR20237006903 A KR 20237006903A KR 102796438 B1 KR102796438 B1 KR 102796438B1
Authority
KR
South Korea
Prior art keywords
group
formula
preferable
carbon atoms
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237006903A
Other languages
English (en)
Korean (ko)
Other versions
KR20230044484A (ko
Inventor
아츠야스 노자키
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Publication of KR20230044484A publication Critical patent/KR20230044484A/ko
Application granted granted Critical
Publication of KR102796438B1 publication Critical patent/KR102796438B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Laminated Bodies (AREA)
KR1020237006903A 2020-08-28 2021-08-24 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스 Active KR102796438B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020143993 2020-08-28
JPJP-P-2020-143993 2020-08-28
PCT/JP2021/030958 WO2022045120A1 (ja) 2020-08-28 2021-08-24 感光性樹脂組成物、硬化物、積層体、硬化物の製造方法、及び、半導体デバイス

Publications (2)

Publication Number Publication Date
KR20230044484A KR20230044484A (ko) 2023-04-04
KR102796438B1 true KR102796438B1 (ko) 2025-04-16

Family

ID=80353283

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237006903A Active KR102796438B1 (ko) 2020-08-28 2021-08-24 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스

Country Status (3)

Country Link
JP (2) JP7629930B2 (enrdf_load_stackoverflow)
KR (1) KR102796438B1 (enrdf_load_stackoverflow)
WO (1) WO2022045120A1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250018531A (ko) * 2022-06-02 2025-02-06 도쿄 오카 고교 가부시키가이샤 폴리이미드 수지 전구체
CN116731063A (zh) * 2022-06-14 2023-09-12 北京鼎材科技有限公司 一种硅烷偶联剂及其应用、包含其的光敏树脂组合物
CN116375591B (zh) * 2023-06-05 2023-10-03 中节能万润股份有限公司 一种含双键的聚酰亚胺二胺单体的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001092133A (ja) * 1999-09-24 2001-04-06 Hitachi Chemical Dupont Microsystems Ltd 感光性組成物、感光材料、レリーフパターンの製造法及びポリイミドパターンの製造法
JP2019053220A (ja) * 2017-09-15 2019-04-04 住友ベークライト株式会社 感光性樹脂組成物、半導体装置および電子機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5041134B2 (ja) 2006-01-30 2012-10-03 Jsr株式会社 液晶の配向剤、配向膜および液晶表示素子
JP6245180B2 (ja) * 2012-12-21 2017-12-13 日立化成デュポンマイクロシステムズ株式会社 ポリイミド前駆体樹脂組成物
WO2017131037A1 (ja) * 2016-01-29 2017-08-03 富士フイルム株式会社 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、積層体の製造方法、および半導体デバイス
TWI767436B (zh) * 2016-02-26 2022-06-11 日商富士軟片股份有限公司 積層體的製造方法、半導體元件的製造方法及再配線層的製造方法
JP2018180227A (ja) 2017-04-11 2018-11-15 Jnc株式会社 光配向法に用いる光配向用液晶配向剤、およびそれを用いた光配向膜、液晶表示素子
TWI742285B (zh) * 2017-06-06 2021-10-11 日商富士軟片股份有限公司 感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體裝置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001092133A (ja) * 1999-09-24 2001-04-06 Hitachi Chemical Dupont Microsystems Ltd 感光性組成物、感光材料、レリーフパターンの製造法及びポリイミドパターンの製造法
JP2019053220A (ja) * 2017-09-15 2019-04-04 住友ベークライト株式会社 感光性樹脂組成物、半導体装置および電子機器

Also Published As

Publication number Publication date
WO2022045120A1 (ja) 2022-03-03
KR20230044484A (ko) 2023-04-04
JP2025020376A (ja) 2025-02-12
JPWO2022045120A1 (enrdf_load_stackoverflow) 2022-03-03
JP7629930B2 (ja) 2025-02-14
TW202219637A (zh) 2022-05-16

Similar Documents

Publication Publication Date Title
KR102737898B1 (ko) 경화성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
KR102796438B1 (ko) 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102834198B1 (ko) 경화성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
KR102648552B1 (ko) 경화막의 제조 방법, 광경화성 수지 조성물, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR102800736B1 (ko) 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR102827423B1 (ko) 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR20230112132A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
CN116234845A (zh) 固化物的制造方法、层叠体的制造方法及半导体器件的制造方法
KR102793452B1 (ko) 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 광염기 발생제
KR102836294B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102740154B1 (ko) 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR20230153436A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102766259B1 (ko) 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
KR102832995B1 (ko) 복합 패턴의 제조 방법, 수지 조성물, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR20230054708A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
WO2022071226A1 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、及び、半導体デバイス
TW202222911A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體元件
KR102857827B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102812620B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102848086B1 (ko) 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR102766256B1 (ko) 경화물의 제조 방법, 수지 조성물, 현상액, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR20230044259A (ko) 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 화합물
KR20230146065A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR20230134130A (ko) 영구막의 제조 방법, 적층체의 제조 방법, 및, 반도체디바이스의 제조 방법
KR20230056034A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20230227

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20240724

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20250327

PG1601 Publication of registration