KR102779364B1 - 히스테리시스 콤퍼레이터, 반도체 장치, 및 축전 장치 - Google Patents

히스테리시스 콤퍼레이터, 반도체 장치, 및 축전 장치 Download PDF

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KR102779364B1
KR102779364B1 KR1020217016378A KR20217016378A KR102779364B1 KR 102779364 B1 KR102779364 B1 KR 102779364B1 KR 1020217016378 A KR1020217016378 A KR 1020217016378A KR 20217016378 A KR20217016378 A KR 20217016378A KR 102779364 B1 KR102779364 B1 KR 102779364B1
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South Korea
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insulator
transistor
oxide
addition
conductor
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KR20210104682A (ko
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유키 오카모토
케이 타카하시
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/18—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for integration or differentiation; for forming integrals
    • G06G7/184—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for integration or differentiation; for forming integrals using capacitive elements
    • G06G7/186—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for integration or differentiation; for forming integrals using capacitive elements using an operational amplifier comprising a capacitor or a resistor in the feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/48—Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/02—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries for charging batteries from AC mains by converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/50—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially
    • H02J7/52—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially for charge balancing, e.g. equalisation of charge between batteries
    • H02J7/54—Passive balancing, e.g. using resistors or parallel MOSFETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018557—Coupling arrangements; Impedance matching circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0233—Bistable circuits
    • H03K3/02337—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • H03K5/082—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding with an adaptive threshold
    • H03K5/084—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding with an adaptive threshold modified by switching, e.g. by a periodic signal or by a signal in synchronism with the transitions of the output signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/94—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated
    • H03K2217/96—Touch switches
    • H03K2217/9607—Capacitive touch switches
    • H03K2217/960735—Capacitive touch switches characterised by circuit details
    • H03K2217/96074—Switched capacitor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Software Systems (AREA)
  • General Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Secondary Cells (AREA)
  • Manipulation Of Pulses (AREA)
KR1020217016378A 2018-12-19 2019-12-11 히스테리시스 콤퍼레이터, 반도체 장치, 및 축전 장치 Active KR102779364B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018237337 2018-12-19
JPJP-P-2018-237337 2018-12-19
PCT/IB2019/060640 WO2020128722A1 (ja) 2018-12-19 2019-12-11 ヒステリシスコンパレータ、半導体装置、及び蓄電装置

Publications (2)

Publication Number Publication Date
KR20210104682A KR20210104682A (ko) 2021-08-25
KR102779364B1 true KR102779364B1 (ko) 2025-03-12

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KR1020217016378A Active KR102779364B1 (ko) 2018-12-19 2019-12-11 히스테리시스 콤퍼레이터, 반도체 장치, 및 축전 장치

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US (2) US11362647B2 (https=)
JP (1) JP7273064B2 (https=)
KR (1) KR102779364B1 (https=)
CN (1) CN113196659A (https=)
WO (1) WO2020128722A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020104891A1 (ja) 2018-11-22 2020-05-28 株式会社半導体エネルギー研究所 半導体装置、蓄電装置、及び電子機器
JP7273064B2 (ja) * 2018-12-19 2023-05-12 株式会社半導体エネルギー研究所 ヒステリシスコンパレータ、半導体装置、及び蓄電装置
WO2020174299A1 (ja) 2019-02-25 2020-09-03 株式会社半導体エネルギー研究所 二次電池の保護回路及び二次電池の異常検知システム
JPWO2022018560A1 (https=) 2020-07-24 2022-01-27
JP7717080B2 (ja) * 2020-09-18 2025-08-01 株式会社半導体エネルギー研究所 半導体装置、および電子機器
EP4233998B1 (en) * 2022-02-24 2024-09-04 BIOTRONIK SE & Co. KG Implantable medical device and methods for manufacturing an implantable housing
KR20230139545A (ko) * 2022-03-28 2023-10-05 삼성전자주식회사 반도체 소자 및 이를 포함하는 반도체 메모리 셀
JP7560238B2 (ja) * 2022-06-21 2024-10-02 株式会社クボタ バッテリパック

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0624313B2 (ja) * 1985-11-21 1994-03-30 日本電気株式会社 スイツチトキヤパシタ回路
JPS6412613A (en) * 1987-07-07 1989-01-17 Nec Corp Voltage comparator circuit having hysteresis
JP2972247B2 (ja) * 1989-12-14 1999-11-08 日本電気株式会社 スイッチト・キャパシタ型ヒステリシスコンパレータ回路
JPH09266639A (ja) 1996-03-27 1997-10-07 Makita Corp 充電装置
KR100263551B1 (ko) 1996-10-12 2000-08-01 윤종용 2차 배터리 충전 회로
JP3593261B2 (ja) * 1998-06-22 2004-11-24 株式会社リコー ヒステリシスコンパレータ回路、及び波形発生回路
JP3510546B2 (ja) 1999-12-01 2004-03-29 Ｎｅｃエレクトロニクス株式会社 Ｍｏｓトランジスタのゲート酸化膜トンネル電流モデル
JP2002300011A (ja) * 2001-03-30 2002-10-11 Seiko Instruments Inc ヒステリシス付き電圧比較器
JP4744909B2 (ja) * 2005-03-30 2011-08-10 東芝マイクロエレクトロニクス株式会社 ヒステリシスコンパレータ
JP4884295B2 (ja) 2007-05-16 2012-02-29 トヨタ自動車株式会社 車両に搭載された電気機器の冷却装置
JP2009017703A (ja) 2007-07-05 2009-01-22 Mitsumi Electric Co Ltd 二次電池の充電制御回路及びこれを用いた充電制御装置
JP5061884B2 (ja) 2007-12-21 2012-10-31 ミツミ電機株式会社 電池パック
JP5815195B2 (ja) 2008-09-11 2015-11-17 ミツミ電機株式会社 電池状態検知装置及びそれを内蔵する電池パック
JP2010086774A (ja) 2008-09-30 2010-04-15 Toshiba Corp 二次電池の残量管理システムおよび残量管理方法
JP5403514B2 (ja) 2009-10-29 2014-01-29 セイコーエプソン株式会社 温度センサ及び温度検出方法
JP2011097772A (ja) 2009-10-30 2011-05-12 Seiko Instruments Inc バッテリ状態監視回路及びバッテリ装置
JP5738667B2 (ja) 2010-05-28 2015-06-24 株式会社半導体エネルギー研究所 蓄電装置
JP5777148B2 (ja) 2011-04-27 2015-09-09 セイコーエプソン株式会社 温度計測方法
US10298043B2 (en) 2011-12-23 2019-05-21 Semiconductor Energy Laboratory Co., Ltd. Method for charging lithium ion secondary battery and battery charger
KR20150023547A (ko) 2012-06-01 2015-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 경보 장치
US9160195B2 (en) * 2012-07-17 2015-10-13 Semiconductor Energy Laboratory Co., Ltd. Charging device
US9614258B2 (en) 2012-12-28 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Power storage device and power storage system
JP6150255B2 (ja) * 2013-09-30 2017-06-21 セイコーＮｐｃ株式会社 ヒステリシスコンパレータ回路
JP2016154110A (ja) 2015-02-20 2016-08-25 株式会社東芝 バッテリおよびバッテリのためのアラーム提示方法
JP6672949B2 (ja) 2016-03-29 2020-03-25 株式会社豊田自動織機 充電装置
KR102367787B1 (ko) 2016-06-30 2022-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 동작 방법
FR3082959A1 (fr) * 2018-06-26 2019-12-27 Stmicroelectronics (Rousset) Sas Commande cyclique de cellules d'un circuit integre
JP7273064B2 (ja) * 2018-12-19 2023-05-12 株式会社半導体エネルギー研究所 ヒステリシスコンパレータ、半導体装置、及び蓄電装置

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Publication number Publication date
US20220329233A1 (en) 2022-10-13
JP7273064B2 (ja) 2023-05-12
CN113196659A (zh) 2021-07-30
JPWO2020128722A1 (https=) 2020-06-25
US11664786B2 (en) 2023-05-30
KR20210104682A (ko) 2021-08-25
US11362647B2 (en) 2022-06-14
WO2020128722A1 (ja) 2020-06-25
US20220021376A1 (en) 2022-01-20

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