KR102762334B1 - 광기전 디바이스 - Google Patents

광기전 디바이스 Download PDF

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Publication number
KR102762334B1
KR102762334B1 KR1020217041368A KR20217041368A KR102762334B1 KR 102762334 B1 KR102762334 B1 KR 102762334B1 KR 1020217041368 A KR1020217041368 A KR 1020217041368A KR 20217041368 A KR20217041368 A KR 20217041368A KR 102762334 B1 KR102762334 B1 KR 102762334B1
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South Korea
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layer
photovoltaic device
type
insulating layers
inorganic
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English (en)
Korean (ko)
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KR20220045107A (ko
Inventor
벤 윌리엄스
니콜라 보몬트
에드워드 제임스 윌리엄 크로스랜드
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옥스퍼드 포토발테익스 리미티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/19—Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020217041368A 2019-05-16 2020-05-14 광기전 디바이스 Active KR102762334B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1906926.9A GB2583965A (en) 2019-05-16 2019-05-16 Photovoltaic device
GB1906926.9 2019-05-16
PCT/GB2020/051173 WO2020229826A1 (en) 2019-05-16 2020-05-14 Photovoltaic device

Publications (2)

Publication Number Publication Date
KR20220045107A KR20220045107A (ko) 2022-04-12
KR102762334B1 true KR102762334B1 (ko) 2025-02-03

Family

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KR1020217041368A Active KR102762334B1 (ko) 2019-05-16 2020-05-14 광기전 디바이스

Country Status (10)

Country Link
US (2) US12349530B2 (https=)
EP (1) EP3970209B1 (https=)
JP (2) JP2022533037A (https=)
KR (1) KR102762334B1 (https=)
CN (1) CN114424356A (https=)
AU (1) AU2020274424B2 (https=)
ES (1) ES2978894T3 (https=)
GB (1) GB2583965A (https=)
PL (1) PL3970209T3 (https=)
WO (1) WO2020229826A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
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US12252784B2 (en) * 2019-06-12 2025-03-18 President And Fellows Of Harvard College Copper halide layers
EP4199126B1 (en) * 2021-12-19 2024-07-31 Imec Vzw Forming of perovskite-based optoelectronic devices
TWI831655B (zh) * 2023-03-21 2024-02-01 明志科技大學 多元陽離子摻雜的鈣鈦礦化合物及鈣鈦礦太陽能電池
WO2025109103A1 (fr) * 2023-11-23 2025-05-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure photovoltaïque tandem de type pin à base de pérovskite comportant une couche tampon en alo x

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014067861A (ja) * 2012-09-26 2014-04-17 Toshiba Corp 光電変換素子と太陽電池及びこれらの製造方法
JP2018503971A (ja) * 2014-11-21 2018-02-08 エイチイーイーソーラー，エルエルシー ペルブスカイト材料の二層及び三層の界面層

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JP3468485B2 (ja) * 1995-05-29 2003-11-17 松下電器産業株式会社 薄膜太陽電池
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
ES2707296T3 (es) 2012-09-18 2019-04-03 Univ Oxford Innovation Ltd Dispositivo optoelectrónico
US9416279B2 (en) * 2013-11-26 2016-08-16 Hunt Energy Enterprises, L.L.C. Bi- and tri-layer interfacial layers in perovskite material devices
GB201412201D0 (en) 2014-07-09 2014-08-20 Isis Innovation Two-step deposition process
KR20160046092A (ko) 2014-10-20 2016-04-28 영남대학교 산학협력단 태양전지 및 그 제조 방법
CN105428438B (zh) * 2015-05-18 2017-03-08 北京科技大学 一种高效钙钛矿太阳能电池及其制备方法
EP3496173B1 (en) * 2015-06-12 2020-04-08 Oxford Photovoltaics Limited Perovskite material
US9773991B2 (en) * 2015-08-05 2017-09-26 Uchicago Argonne, Llc Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization
KR101793640B1 (ko) 2015-09-24 2017-11-20 재단법인대구경북과학기술원 인듐을 이용한 태양전지용 ｃｚｔｓ계 흡수층 박막, 이의 제조방법 및 이를 이용한 태양전지
US10522774B2 (en) * 2015-10-22 2019-12-31 The Board Of Trustees Of The Leland Stanford Junior University Solar cell comprising an oxide-nanoparticle buffer layer and method of fabrication
GB201520972D0 (en) 2015-11-27 2016-01-13 Isis Innovation Mixed cation perovskite
WO2018007586A1 (en) * 2016-07-07 2018-01-11 Technische Universiteit Eindhoven Perovskite contacting passivating barrier layer for solar cells
WO2018057419A1 (en) * 2016-09-20 2018-03-29 The Board Of Trustees Of The Leland Stanford Junior University Solar cell comprising a metal-oxide buffer layer and method of fabrication
US20180174762A1 (en) * 2016-12-16 2018-06-21 Uchicago Argonne, Llc Hybrid organic-inorganic electron selective overlayers for halide perovoskites
CN206758471U (zh) * 2017-06-06 2017-12-15 辽宁工业大学 一种钙钛矿太阳能电池

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014067861A (ja) * 2012-09-26 2014-04-17 Toshiba Corp 光電変換素子と太陽電池及びこれらの製造方法
JP2018503971A (ja) * 2014-11-21 2018-02-08 エイチイーイーソーラー，エルエルシー ペルブスカイト材料の二層及び三層の界面層

Also Published As

Publication number Publication date
EP3970209B1 (en) 2024-02-14
US20250287769A1 (en) 2025-09-11
GB2583965A (en) 2020-11-18
WO2020229826A1 (en) 2020-11-19
KR20220045107A (ko) 2022-04-12
AU2020274424A1 (en) 2021-11-18
JP2025098100A (ja) 2025-07-01
US12349530B2 (en) 2025-07-01
US20220246872A1 (en) 2022-08-04
PL3970209T3 (pl) 2024-06-10
CN114424356A (zh) 2022-04-29
AU2020274424B2 (en) 2025-06-05
EP3970209A1 (en) 2022-03-23
JP2022533037A (ja) 2022-07-21
ES2978894T3 (es) 2024-09-23
GB201906926D0 (en) 2019-07-03

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