ES2978894T3 - Dispositivo fotovoltaico - Google Patents

Dispositivo fotovoltaico Download PDF

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Publication number
ES2978894T3
ES2978894T3 ES20728150T ES20728150T ES2978894T3 ES 2978894 T3 ES2978894 T3 ES 2978894T3 ES 20728150 T ES20728150 T ES 20728150T ES 20728150 T ES20728150 T ES 20728150T ES 2978894 T3 ES2978894 T3 ES 2978894T3
Authority
ES
Spain
Prior art keywords
layer
type
electrically insulating
photovoltaic device
perovskite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES20728150T
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English (en)
Spanish (es)
Inventor
Ben Williams
Nicola Beaumont
Edward James William Crossland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford Photovoltaics Ltd
Original Assignee
Oxford Photovoltaics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford Photovoltaics Ltd filed Critical Oxford Photovoltaics Ltd
Application granted granted Critical
Publication of ES2978894T3 publication Critical patent/ES2978894T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • H10K30/57Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/19Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/126Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/128Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/81Electrodes
    • H10K30/82Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/88Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
ES20728150T 2019-05-16 2020-05-14 Dispositivo fotovoltaico Active ES2978894T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1906926.9A GB2583965A (en) 2019-05-16 2019-05-16 Photovoltaic device
PCT/GB2020/051173 WO2020229826A1 (en) 2019-05-16 2020-05-14 Photovoltaic device

Publications (1)

Publication Number Publication Date
ES2978894T3 true ES2978894T3 (es) 2024-09-23

Family

ID=67385252

Family Applications (1)

Application Number Title Priority Date Filing Date
ES20728150T Active ES2978894T3 (es) 2019-05-16 2020-05-14 Dispositivo fotovoltaico

Country Status (10)

Country Link
US (2) US12349530B2 (https=)
EP (1) EP3970209B1 (https=)
JP (2) JP2022533037A (https=)
KR (1) KR102762334B1 (https=)
CN (1) CN114424356A (https=)
AU (1) AU2020274424B2 (https=)
ES (1) ES2978894T3 (https=)
GB (1) GB2583965A (https=)
PL (1) PL3970209T3 (https=)
WO (1) WO2020229826A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12252784B2 (en) * 2019-06-12 2025-03-18 President And Fellows Of Harvard College Copper halide layers
EP4199126B1 (en) * 2021-12-19 2024-07-31 Imec Vzw Forming of perovskite-based optoelectronic devices
TWI831655B (zh) * 2023-03-21 2024-02-01 明志科技大學 多元陽離子摻雜的鈣鈦礦化合物及鈣鈦礦太陽能電池
WO2025109103A1 (fr) * 2023-11-23 2025-05-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure photovoltaïque tandem de type pin à base de pérovskite comportant une couche tampon en alo x

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3468485B2 (ja) * 1995-05-29 2003-11-17 松下電器産業株式会社 薄膜太陽電池
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
ES2707296T3 (es) 2012-09-18 2019-04-03 Univ Oxford Innovation Ltd Dispositivo optoelectrónico
JP5783984B2 (ja) 2012-09-26 2015-09-24 株式会社東芝 光電変換素子と太陽電池及びこれらの製造方法
US9416279B2 (en) * 2013-11-26 2016-08-16 Hunt Energy Enterprises, L.L.C. Bi- and tri-layer interfacial layers in perovskite material devices
GB201412201D0 (en) 2014-07-09 2014-08-20 Isis Innovation Two-step deposition process
KR20160046092A (ko) 2014-10-20 2016-04-28 영남대학교 산학협력단 태양전지 및 그 제조 방법
AU2015349902B2 (en) * 2014-11-21 2017-11-23 Cubicpv Inc. Bi-and tri-layer interfacial layers in perovskite material devices
CN105428438B (zh) * 2015-05-18 2017-03-08 北京科技大学 一种高效钙钛矿太阳能电池及其制备方法
EP3496173B1 (en) * 2015-06-12 2020-04-08 Oxford Photovoltaics Limited Perovskite material
US9773991B2 (en) * 2015-08-05 2017-09-26 Uchicago Argonne, Llc Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization
KR101793640B1 (ko) 2015-09-24 2017-11-20 재단법인대구경북과학기술원 인듐을 이용한 태양전지용 czts계 흡수층 박막, 이의 제조방법 및 이를 이용한 태양전지
US10522774B2 (en) * 2015-10-22 2019-12-31 The Board Of Trustees Of The Leland Stanford Junior University Solar cell comprising an oxide-nanoparticle buffer layer and method of fabrication
GB201520972D0 (en) 2015-11-27 2016-01-13 Isis Innovation Mixed cation perovskite
WO2018007586A1 (en) * 2016-07-07 2018-01-11 Technische Universiteit Eindhoven Perovskite contacting passivating barrier layer for solar cells
WO2018057419A1 (en) * 2016-09-20 2018-03-29 The Board Of Trustees Of The Leland Stanford Junior University Solar cell comprising a metal-oxide buffer layer and method of fabrication
US20180174762A1 (en) * 2016-12-16 2018-06-21 Uchicago Argonne, Llc Hybrid organic-inorganic electron selective overlayers for halide perovoskites
CN206758471U (zh) * 2017-06-06 2017-12-15 辽宁工业大学 一种钙钛矿太阳能电池

Also Published As

Publication number Publication date
EP3970209B1 (en) 2024-02-14
US20250287769A1 (en) 2025-09-11
GB2583965A (en) 2020-11-18
WO2020229826A1 (en) 2020-11-19
KR20220045107A (ko) 2022-04-12
AU2020274424A1 (en) 2021-11-18
JP2025098100A (ja) 2025-07-01
US12349530B2 (en) 2025-07-01
US20220246872A1 (en) 2022-08-04
KR102762334B1 (ko) 2025-02-03
PL3970209T3 (pl) 2024-06-10
CN114424356A (zh) 2022-04-29
AU2020274424B2 (en) 2025-06-05
EP3970209A1 (en) 2022-03-23
JP2022533037A (ja) 2022-07-21
GB201906926D0 (en) 2019-07-03

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