JP2022533037A - 光起電力装置 - Google Patents
光起電力装置 Download PDFInfo
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- JP2022533037A JP2022533037A JP2021565922A JP2021565922A JP2022533037A JP 2022533037 A JP2022533037 A JP 2022533037A JP 2021565922 A JP2021565922 A JP 2021565922A JP 2021565922 A JP2021565922 A JP 2021565922A JP 2022533037 A JP2022533037 A JP 2022533037A
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- photovoltaic device
- electrically insulating
- inorganic
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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Abstract
Description
1)プロセスの再現性:多くのALDプロセスの核発生の表面依存性のため、膜厚は、処理ごとに異なり得る。SnO2の場合、これは、最大10から15%になり得る。
2)未パッシベーション結合による無機-n/フラーレン界面でのキャリア再結合により、太陽電池装置における開回路電圧(VOC)およびフィルファクタ(FF)のロスが生じる。
3)無機n型層の目的は、有機n型層およびペロブスカイト層をスパッタ損傷から保護すること、ならびに有害なITO/有機nコンタクト、およびITO/ペロブスカイトコンタクトの領域の形成を抑制することである。無機層の不十分な密度および/または表面被覆率、あるいは過剰に高い導電率は、この効果を制限し得る。
通常、これは、一般式ABX3を有する三次元結晶構造を有する。ここで、Aは、1以上の有機または無機カチオン(例えば、メチルアンモニウム、ホルムアミジニウム、グアニジニウム等、およびセシウム、ルビジウム等のカチオン)を含み、Bは、Pb、Sn、SbまたはTiからなる群の1以上から選択される2価金属を表し、Xは、例えば、Cl、BrおよびIから選択される1以上のハロゲン化物アニオンを表す。
ジオキシチオフェニル、またはフルオレニル。 従って、、本発明の光起電力装置で使用されるp型層は、例えば、前述の任意の分子ホール輸送材料、ポリマー、またはコポリマーを有してもよい。
[A][B][X]3 (I)
を有してもよい。ここで、[A]は、1または2以上の1価のカチオンであり、[B]は、1または2以上の2価の無機カチオンであり、[X]は、1または2以上のハロゲン化物アニオンであり、好ましくはフッ化物、塩化物、臭化物、ヨウ化物から選択された、1または2以上のハロゲン化物アニオンを有し、より好ましくは塩化物、臭化物およびヨウ化物から選択される。より好ましくは、[X]は、臭化物およびヨウ化物から選択される1または2以上のハロゲン化物アニオンを有する。ある例では、[X]は、フッ化物、塩化物、臭化物、およびヨウ化物から選択される2つの異なるハロゲン化物アニオンを有することが好ましく、より好ましくは塩化物、臭化物およびヨウ化物から選択され、さらに好ましくは臭化物およびヨウ化物を有する。
AxA’1-xB(XyX’1-y)3 (IA)
を有する。ここで、Aは、ホルムアミジニウム(FA)であり、A’は、セシウムカチオン(Cs +)であり、Bは、Pb2+であり、Xは、ヨウ化物であり、X’は、臭化物であり、0<x≦1および0<y≦1である。従って、これらの好適実施形態では、ペロブスカイト材料は、2つの1価のカチオンの混合物を有し得る。また、好適実施例では、従って、ペロブスカイト材料は、単一のヨウ化物アニオン、またはヨウ化物アニオンと臭化物アニオンの混合物のいずれかを有し得る。本願発明者らは、そのようなペロブスカイト材料は、1.5eVから1.75eVのバンドギャップを有し得ること、およびそのようなペロブスカイト材料の層は、好適な結晶形態および相で容易に形成できることを見出した。より好ましくは、ペロブスカイト材料は、FA1-xCsxPbI3-yBryである。
に記載されている。
例えば、硫化物は、FeS2、CdS、ZnS、SnS、BiS、SbS、またはCu2ZnSnS4を有してもよい。
Eg-A>Wg-B
EC-A>EC-B
EV-A<EV-B
電気絶縁層(6、8)は、4.5eVを超えるバンドギャップを有する材料から形成され、好ましくは5、5.5、6、6.5または7eVを超える。好適な材料は、Al2O3およびLiFを有する。最も好ましい材料は、Al2O3である。
図1Bに示されるような無機「真性-n型-真性(INI)」サンドイッチ界面構造を有するPIN光起電力装置についての結果が示される。ここで、INI構造は、具体的に、Al2O3/SnO2/Al2O3である。
本発明のスタックおよび従来技術に対応するスタックに対して、一連の実験を実施した。後者は、3層の代わりに、SnO2層で構成した。その他の点では、両スタックは同じあった。
図2は、繰り返しラン数の予想厚さに正規化された測定厚さのプロットであり、a)は、SnO2のみの場合、b)は、Al2O3/SnO2/Al2O3の場合であり、単層に比べて、3層ではランツーラン変動が減少することが示されている。これは、SnO2層の核発生を促進するように作用する、第1のAl2O3層によるものである。
電流‐電圧(I‐V)曲線を構成し、本発明の構造を使用した際の改善されたダイオードパラメータを評価した。Keithley線源メータを用いて測定を行った。最初に、J‐V曲線を作成し、単一のダイオード太陽電池等価回路にフィッティングさせ、n(理想ファクタ)、J0(逆飽和電流)、およびRs(直列抵抗)を抽出した。Voc、FF等は、照射J‐V測定のAM1.5から取得した。
この実験では、0~2nmで変化する第1のAl2O3層の厚さの重要性が検証される。Keithley線源メータおよびAM1.5照明を用いて、光I-V測定が実施される。短絡回路でのJ‐V勾配の逆数からシャント抵抗が求められた。
Claims (13)
- PIN構造を有する光起電力装置であって、
p型ホール輸送層が基板に担持され、
前記p型層上に、ペロブスカイト層およびn型電子輸送層がこの順に配置され、
前記n型電子輸送層の上部には、光透過性導電層が提供され、受光上部表面が形成され、
前記n型電子輸送層と前記光透過性導電層の間には、間に導電性材料の層を有する2つの無機電気絶縁層を有する界面構造が提供され、
前記電気絶縁層は、バンドギャップが4.5eVよりも大きい材料を有し、前記導電性材料の層は、前記電気絶縁層のバンドギャップよりもバンドギャップが小さい材料を有し、
各電気絶縁層は、前記導電性材料の層とタイプ1のオフセット接合を形成する、光起電力装置。 - 前記導電性材料の層は、バンドギャップが2eVよりも大きく、4.0eV以下の材料を有する、請求項1に記載の光起電力装置。
- 前記基板は、別の光起電力サブセルを有し、モノリシックな一体化マルチ接合光起電力装置が形成される、請求項1または2に記載の光起電力装置。
- 前記2つの無機電気絶縁層は、Al2O3を有する、請求項1乃至3のいずれか一項に記載の光起電力装置。
- 前記2つの無機電気絶縁層の間の前記導電性材料の層は、SnOx;ZnOx;(Zn:Sn)Ox;TiOxおよびInOxからなる群から選定された1または2以上の材料を有する、請求項1乃至4のいずれか一項に記載の光起電力装置。
- 前記2つの無機電気絶縁層の間の前記導電性材料の層は、SnOxを有する、請求項5に記載の光起電力装置。
- 前記別の光起電力サブセルは、ペロブスカイト、単結晶シリコン、ポリシリコン、Cu(In,Ga)Se2、またはCu2ZnSn(S,Se)4サブセルを有する、請求項3に記載の光起電力装置。
- 前記ペロブスカイト層は、有機カチオンおよびセシウムカチオン、Pb、Sn、Sb、もしくはTiの1もしくは2以上から選択された1または2以上のカチオンと、Cl、BrおよびIから選択された1もしくは2以上のハロゲン化物アニオンと、を有する、請求項1乃至7のいずれか一項に記載の光起電力装置。
- 前記2つの無機電気絶縁層は、0.4から3nmの間の厚さを有する、請求項1乃至8のいずれか一項に記載の光起電力装置。
- 前記2つの無機電気絶縁層の間の前記導電性材料の層は、3から12nmの間の厚さを有する、請求項1乃至9のいずれか一項に記載の光起電力装置。
- 光起電力装置であって、
p型層およびn型層を有するCu(In,Ga)Se2またはCu2ZnSn(S,Se)4のp-n接合と、
前記n型層の上部に提供され、受光上部表面を形成する光透過性導電層と、
を有し、
前記n型層と前記光透過性導電層との間には、間に導電性材料の層を有する2つの無機電気絶縁層を有する構造が提供され、
前記2つの無機電気絶縁層は、バンドギャップが4.5eVよりも大きい材料を有し、
前記導電性材料の層は、バンドギャップが2eVよりも大きく、4.0eVよりも小さい材料を有する、光起電力装置。 - 前記2つの無機電気絶縁層、および間の前記導電性材料の層は、原子層成膜により、前記n型電子輸送材料の層上に、この順に成膜される、請求項1乃至11のいずれか一項に記載の光起電力装置を製造する方法。
- 前記原子層成膜は、125℃以下の温度で実施される、請求項12に記載の方法。
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