CN114424356A - 光伏器件 - Google Patents

光伏器件 Download PDF

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Publication number
CN114424356A
CN114424356A CN202080048531.1A CN202080048531A CN114424356A CN 114424356 A CN114424356 A CN 114424356A CN 202080048531 A CN202080048531 A CN 202080048531A CN 114424356 A CN114424356 A CN 114424356A
Authority
CN
China
Prior art keywords
layer
type
photovoltaic device
insulating layers
inorganic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080048531.1A
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English (en)
Chinese (zh)
Inventor
B·威廉姆斯
N·博蒙特
E·J·W·克罗斯兰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford Photovoltaics Ltd
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Oxford Photovoltaics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford Photovoltaics Ltd filed Critical Oxford Photovoltaics Ltd
Publication of CN114424356A publication Critical patent/CN114424356A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/19—Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
CN202080048531.1A 2019-05-16 2020-05-14 光伏器件 Pending CN114424356A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1906926.9A GB2583965A (en) 2019-05-16 2019-05-16 Photovoltaic device
GB1906926.9 2019-05-16
PCT/GB2020/051173 WO2020229826A1 (en) 2019-05-16 2020-05-14 Photovoltaic device

Publications (1)

Publication Number Publication Date
CN114424356A true CN114424356A (zh) 2022-04-29

Family

ID=67385252

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080048531.1A Pending CN114424356A (zh) 2019-05-16 2020-05-14 光伏器件

Country Status (10)

Country Link
US (2) US12349530B2 (https=)
EP (1) EP3970209B1 (https=)
JP (2) JP2022533037A (https=)
KR (1) KR102762334B1 (https=)
CN (1) CN114424356A (https=)
AU (1) AU2020274424B2 (https=)
ES (1) ES2978894T3 (https=)
GB (1) GB2583965A (https=)
PL (1) PL3970209T3 (https=)
WO (1) WO2020229826A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12252784B2 (en) * 2019-06-12 2025-03-18 President And Fellows Of Harvard College Copper halide layers
EP4199126B1 (en) * 2021-12-19 2024-07-31 Imec Vzw Forming of perovskite-based optoelectronic devices
TWI831655B (zh) * 2023-03-21 2024-02-01 明志科技大學 多元陽離子摻雜的鈣鈦礦化合物及鈣鈦礦太陽能電池
WO2025109103A1 (fr) * 2023-11-23 2025-05-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure photovoltaïque tandem de type pin à base de pérovskite comportant une couche tampon en alo x

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105428438A (zh) * 2015-05-18 2016-03-23 北京科技大学 一种高效钙钛矿太阳能电池及其制备方法
KR20160046092A (ko) * 2014-10-20 2016-04-28 영남대학교 산학협력단 태양전지 및 그 제조 방법
CN107210134A (zh) * 2014-11-21 2017-09-26 亨特能量企业有限公司 钙钛矿材料器件中的双层和三层界面层
WO2018007586A1 (en) * 2016-07-07 2018-01-11 Technische Universiteit Eindhoven Perovskite contacting passivating barrier layer for solar cells

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3468485B2 (ja) * 1995-05-29 2003-11-17 松下電器産業株式会社 薄膜太陽電池
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
ES2707296T3 (es) 2012-09-18 2019-04-03 Univ Oxford Innovation Ltd Dispositivo optoelectrónico
JP5783984B2 (ja) 2012-09-26 2015-09-24 株式会社東芝 光電変換素子と太陽電池及びこれらの製造方法
US9416279B2 (en) * 2013-11-26 2016-08-16 Hunt Energy Enterprises, L.L.C. Bi- and tri-layer interfacial layers in perovskite material devices
GB201412201D0 (en) 2014-07-09 2014-08-20 Isis Innovation Two-step deposition process
EP3496173B1 (en) * 2015-06-12 2020-04-08 Oxford Photovoltaics Limited Perovskite material
US9773991B2 (en) * 2015-08-05 2017-09-26 Uchicago Argonne, Llc Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization
KR101793640B1 (ko) 2015-09-24 2017-11-20 재단법인대구경북과학기술원 인듐을 이용한 태양전지용 ｃｚｔｓ계 흡수층 박막, 이의 제조방법 및 이를 이용한 태양전지
US10522774B2 (en) * 2015-10-22 2019-12-31 The Board Of Trustees Of The Leland Stanford Junior University Solar cell comprising an oxide-nanoparticle buffer layer and method of fabrication
GB201520972D0 (en) 2015-11-27 2016-01-13 Isis Innovation Mixed cation perovskite
WO2018057419A1 (en) * 2016-09-20 2018-03-29 The Board Of Trustees Of The Leland Stanford Junior University Solar cell comprising a metal-oxide buffer layer and method of fabrication
US20180174762A1 (en) * 2016-12-16 2018-06-21 Uchicago Argonne, Llc Hybrid organic-inorganic electron selective overlayers for halide perovoskites
CN206758471U (zh) * 2017-06-06 2017-12-15 辽宁工业大学 一种钙钛矿太阳能电池

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160046092A (ko) * 2014-10-20 2016-04-28 영남대학교 산학협력단 태양전지 및 그 제조 방법
CN107210134A (zh) * 2014-11-21 2017-09-26 亨特能量企业有限公司 钙钛矿材料器件中的双层和三层界面层
CN105428438A (zh) * 2015-05-18 2016-03-23 北京科技大学 一种高效钙钛矿太阳能电池及其制备方法
WO2018007586A1 (en) * 2016-07-07 2018-01-11 Technische Universiteit Eindhoven Perovskite contacting passivating barrier layer for solar cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KEVIN A. BUSH等: "23.6%-efficient monolithic perovskite/silicon tandem solar cells with improved stability", 《NATURE ENERGY》, 17 February 2017 (2017-02-17), pages 17009 *

Also Published As

Publication number Publication date
EP3970209B1 (en) 2024-02-14
US20250287769A1 (en) 2025-09-11
GB2583965A (en) 2020-11-18
WO2020229826A1 (en) 2020-11-19
KR20220045107A (ko) 2022-04-12
AU2020274424A1 (en) 2021-11-18
JP2025098100A (ja) 2025-07-01
US12349530B2 (en) 2025-07-01
US20220246872A1 (en) 2022-08-04
KR102762334B1 (ko) 2025-02-03
PL3970209T3 (pl) 2024-06-10
AU2020274424B2 (en) 2025-06-05
EP3970209A1 (en) 2022-03-23
JP2022533037A (ja) 2022-07-21
ES2978894T3 (es) 2024-09-23
GB201906926D0 (en) 2019-07-03

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