KR102695213B1 - 성막 장치 및 전자 디바이스의 제조 방법 - Google Patents

성막 장치 및 전자 디바이스의 제조 방법 Download PDF

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KR102695213B1
KR102695213B1 KR1020180151459A KR20180151459A KR102695213B1 KR 102695213 B1 KR102695213 B1 KR 102695213B1 KR 1020180151459 A KR1020180151459 A KR 1020180151459A KR 20180151459 A KR20180151459 A KR 20180151459A KR 102695213 B1 KR102695213 B1 KR 102695213B1
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South Korea
Prior art keywords
target
potential
film
film forming
adhesion
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English (en)
Korean (ko)
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KR20200014170A (ko
Inventor
히로키 스가와라
토시하루 우치다
Original Assignee
캐논 톡키 가부시키가이샤
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020180151459A 2018-07-31 2018-11-29 성막 장치 및 전자 디바이스의 제조 방법 Active KR102695213B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018143735A JP7138504B2 (ja) 2018-07-31 2018-07-31 成膜装置及び電子デバイスの製造方法
JPJP-P-2018-143735 2018-07-31

Publications (2)

Publication Number Publication Date
KR20200014170A KR20200014170A (ko) 2020-02-10
KR102695213B1 true KR102695213B1 (ko) 2024-08-13

Family

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KR1020180151459A Active KR102695213B1 (ko) 2018-07-31 2018-11-29 성막 장치 및 전자 디바이스의 제조 방법

Country Status (3)

Country Link
JP (2) JP7138504B2 (https=)
KR (1) KR102695213B1 (https=)
CN (1) CN110777338A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7140801B2 (ja) * 2020-07-29 2022-09-21 キヤノントッキ株式会社 成膜装置及び電子デバイスの製造方法
US12351929B2 (en) * 2021-03-10 2025-07-08 Ebara Corporation Plating apparatus and plating method
JP7379442B2 (ja) * 2021-11-01 2023-11-14 キヤノントッキ株式会社 反射率測定装置、成膜装置
JP2023156155A (ja) * 2022-04-12 2023-10-24 株式会社アルバック 真空処理装置及び真空処理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012201910A (ja) 2011-03-24 2012-10-22 Ulvac Japan Ltd マグネトロンスパッタ電極及びスパッタリング装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0627323B2 (ja) * 1983-12-26 1994-04-13 株式会社日立製作所 スパツタリング方法及びその装置
US5106474A (en) * 1990-11-21 1992-04-21 Viratec Thin Films, Inc. Anode structures for magnetron sputtering apparatus
JP3076367B2 (ja) * 1990-11-29 2000-08-14 キヤノン株式会社 プラズマ処理装置
US5616225A (en) * 1994-03-23 1997-04-01 The Boc Group, Inc. Use of multiple anodes in a magnetron for improving the uniformity of its plasma
JPH10152772A (ja) * 1996-11-22 1998-06-09 Matsushita Electric Ind Co Ltd スパッタリング方法及び装置
CN1196169C (zh) * 1998-04-16 2005-04-06 贝克尔特Vds股份有限公司 磁控管中用于控制目标冲蚀和溅射的装置
JP4865570B2 (ja) * 2004-12-28 2012-02-01 株式会社アルバック スパッタ源、スパッタ装置、薄膜の製造方法
JP2006253275A (ja) * 2005-03-09 2006-09-21 Matsushita Electric Ind Co Ltd スパッタリング装置
JP5059429B2 (ja) * 2007-01-26 2012-10-24 株式会社大阪真空機器製作所 スパッタ方法及びスパッタ装置
KR20120014589A (ko) * 2009-09-01 2012-02-17 도쿄엘렉트론가부시키가이샤 스퍼터링 장치
JP2013237913A (ja) 2012-05-16 2013-11-28 Ulvac Japan Ltd スパッタリング装置及びスパッタリング方法
JP2014066619A (ja) * 2012-09-26 2014-04-17 Hitachi High-Technologies Corp 成膜装置および成膜方法
JP6425431B2 (ja) * 2014-06-30 2018-11-21 株式会社アルバック スパッタリング方法
JP6411975B2 (ja) * 2014-09-30 2018-10-24 芝浦メカトロニクス株式会社 成膜装置及び成膜基板製造方法
JP6875798B2 (ja) * 2016-06-24 2021-05-26 株式会社トヨタプロダクションエンジニアリング 摩耗予測装置、摩耗予測方法、摩耗予測プログラム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012201910A (ja) 2011-03-24 2012-10-22 Ulvac Japan Ltd マグネトロンスパッタ電極及びスパッタリング装置

Also Published As

Publication number Publication date
KR20200014170A (ko) 2020-02-10
CN110777338A (zh) 2020-02-11
JP2020019991A (ja) 2020-02-06
JP2022179487A (ja) 2022-12-02
JP7138504B2 (ja) 2022-09-16
JP7461427B2 (ja) 2024-04-03

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