KR102683008B1 - 감광성 수지 조성물 및 표시장치 - Google Patents

감광성 수지 조성물 및 표시장치 Download PDF

Info

Publication number
KR102683008B1
KR102683008B1 KR1020190156099A KR20190156099A KR102683008B1 KR 102683008 B1 KR102683008 B1 KR 102683008B1 KR 1020190156099 A KR1020190156099 A KR 1020190156099A KR 20190156099 A KR20190156099 A KR 20190156099A KR 102683008 B1 KR102683008 B1 KR 102683008B1
Authority
KR
South Korea
Prior art keywords
group
cardo
resin composition
photosensitive resin
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190156099A
Other languages
English (en)
Korean (ko)
Other versions
KR20210066622A (ko
KR102683008B9 (ko
Inventor
배준
이창민
김준기
임재현
문성윤
Original Assignee
덕산네오룩스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 덕산네오룩스 주식회사 filed Critical 덕산네오룩스 주식회사
Priority to KR1020190156099A priority Critical patent/KR102683008B1/ko
Priority to US17/102,606 priority patent/US11774852B2/en
Priority to EP20209998.2A priority patent/EP3828631A1/en
Priority to CN202011367441.7A priority patent/CN112859521B/zh
Priority to JP2020196933A priority patent/JP2021086157A/ja
Publication of KR20210066622A publication Critical patent/KR20210066622A/ko
Priority to JP2022091720A priority patent/JP2022122980A/ja
Application granted granted Critical
Publication of KR102683008B1 publication Critical patent/KR102683008B1/ko
Publication of KR102683008B9 publication Critical patent/KR102683008B9/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/66—Polyesters containing oxygen in the form of ether groups
    • C08G63/668—Polyesters containing oxygen in the form of ether groups derived from polycarboxylic acids and polyhydroxy compounds
    • C08G63/676—Polyesters containing oxygen in the form of ether groups derived from polycarboxylic acids and polyhydroxy compounds in which at least one of the two components contains aliphatic unsaturation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/68—Polyesters containing atoms other than carbon, hydrogen and oxygen
    • C08G63/695—Polyesters containing atoms other than carbon, hydrogen and oxygen containing silicon
    • C08G63/6954—Polyesters containing atoms other than carbon, hydrogen and oxygen containing silicon derived from polxycarboxylic acids and polyhydroxy compounds
    • C08G63/6958—Polycarboxylic acids and polyhydroxy compounds in which at least one of the two components contains aliphatic unsaturation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D167/00—Coating compositions based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Coating compositions based on derivatives of such polymers
    • C09D167/06—Unsaturated polyesters having carbon-to-carbon unsaturation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optical Filters (AREA)
  • Polyesters Or Polycarbonates (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Polymerisation Methods In General (AREA)
  • Epoxy Resins (AREA)
KR1020190156099A 2019-11-28 2019-11-28 감광성 수지 조성물 및 표시장치 Active KR102683008B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020190156099A KR102683008B1 (ko) 2019-11-28 2019-11-28 감광성 수지 조성물 및 표시장치
US17/102,606 US11774852B2 (en) 2019-11-28 2020-11-24 Photosensitive resin composition and display device
EP20209998.2A EP3828631A1 (en) 2019-11-28 2020-11-26 Photosensitive resin composition and display device
JP2020196933A JP2021086157A (ja) 2019-11-28 2020-11-27 感光性樹脂組成物及び表示装置
CN202011367441.7A CN112859521B (zh) 2019-11-28 2020-11-27 光敏树脂组合物和显示设备
JP2022091720A JP2022122980A (ja) 2019-11-28 2022-06-06 感光性樹脂組成物及び表示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190156099A KR102683008B1 (ko) 2019-11-28 2019-11-28 감광성 수지 조성물 및 표시장치

Publications (3)

Publication Number Publication Date
KR20210066622A KR20210066622A (ko) 2021-06-07
KR102683008B1 true KR102683008B1 (ko) 2024-07-10
KR102683008B9 KR102683008B9 (ko) 2025-05-14

Family

ID=73598729

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190156099A Active KR102683008B1 (ko) 2019-11-28 2019-11-28 감광성 수지 조성물 및 표시장치

Country Status (5)

Country Link
US (1) US11774852B2 (enExample)
EP (1) EP3828631A1 (enExample)
JP (2) JP2021086157A (enExample)
KR (1) KR102683008B1 (enExample)
CN (1) CN112859521B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117321569A (zh) 2021-05-21 2023-12-29 株式会社电装 车辆用电子控制装置、更新程序以及数据结构
KR102818080B1 (ko) * 2021-09-13 2025-06-10 덕산네오룩스 주식회사 접착력이 우수한 감광성 조성물
KR20230072570A (ko) * 2021-11-17 2023-05-25 삼성디스플레이 주식회사 감광성 수지 조성물, 이를 이용하여 제조된 표시 패널 및 이의 제조 방법
JP2023161757A (ja) 2022-04-26 2023-11-08 サカタインクス株式会社 黒色隔壁材用分散液
KR102607463B1 (ko) * 2022-08-14 2023-11-29 덕산네오룩스 주식회사 화소정의층의 제조 방법
KR102607464B1 (ko) * 2022-08-19 2023-11-29 덕산네오룩스 주식회사 화소정의층의 제조 방법
KR102607465B1 (ko) * 2022-09-14 2023-11-29 덕산네오룩스 주식회사 화소정의층의 제조 방법
KR102607466B1 (ko) * 2022-10-06 2023-11-29 덕산네오룩스 주식회사 화소정의층의 제조 방법
KR102607471B1 (ko) * 2023-02-03 2023-11-29 덕산네오룩스 주식회사 화소정의층의 제조 방법
KR102869573B1 (ko) * 2024-09-19 2025-10-14 한국광기술원 고광학밀도 및 고감도 특성을 갖는 마이크로 led 모듈 및 그의 제조방법, 마이크로 디스플레이 패널

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005208572A (ja) 2004-01-19 2005-08-04 Qimei Industry Co Ltd ブラックマトリックス用感光性樹脂組成物
WO2019194402A1 (ko) 2018-04-06 2019-10-10 주식회사 엘지화학 카도계 바인더 수지, 이를 포함하는 감광성 수지 조성물, 블랙 매트릭스, 컬러필터 및 디스플레이 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100725023B1 (ko) * 2006-10-16 2007-06-07 제일모직주식회사 카도계 수지를 함유한 수지 조성물 및 그에 의한 패턴의 제조방법, 이를 이용한 컬러필터
US7784014B1 (en) * 2007-05-03 2010-08-24 Xilinx, Inc. Generation of a specification of a network packet processor
KR101246699B1 (ko) * 2007-11-29 2013-03-25 주식회사 엘지화학 감광성 수지 조성물 및 이를 포함하는 블랙 매트릭스
KR101319919B1 (ko) 2010-10-13 2013-10-22 제일모직주식회사 감광성 수지 조성물 및 이를 이용한 차광층
KR101486560B1 (ko) * 2010-12-10 2015-01-27 제일모직 주식회사 감광성 수지 조성물 및 이를 이용한 차광층
KR101298483B1 (ko) 2011-04-01 2013-08-21 덕산하이메탈(주) 화합물 및 이를 이용한 유기전기소자, 그 전자장치
KR20140081462A (ko) * 2012-12-21 2014-07-01 제일모직주식회사 감광성 수지 조성물 및 이를 이용한 차광층
KR102061571B1 (ko) 2012-12-24 2020-01-02 덕산네오룩스 주식회사 유기전기 소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치
KR20150007571A (ko) * 2013-07-11 2015-01-21 제일모직주식회사 흑색 감광성 수지 조성물 및 이를 이용한 차광층
CN104345563B (zh) * 2013-08-09 2018-09-21 第一毛织株式会社 光敏树脂组合物和使用其的光阻挡层
KR101686567B1 (ko) * 2013-10-23 2016-12-14 제일모직 주식회사 감광성 수지 조성물 및 이를 이용한 차광층
KR101767082B1 (ko) * 2014-11-17 2017-08-10 삼성에스디아이 주식회사 감광성 수지 조성물, 이를 이용한 감광성 수지막 및 컬러필터
CN108027561B (zh) * 2015-09-30 2021-10-08 东丽株式会社 负型感光性树脂组合物、固化膜、具备固化膜的元件及显示装置、以及其制造方法
KR20170111133A (ko) * 2016-03-25 2017-10-12 동우 화인켐 주식회사 착색 감광성 수지 조성물, 이를 이용하여 제조된 컬러필터 및 화상 표시 장치
KR101840347B1 (ko) * 2016-10-26 2018-03-20 동우 화인켐 주식회사 자발광 감광성 수지 조성물, 이를 이용하여 제조된 컬러필터 및 화상 표시 장치
KR102420415B1 (ko) 2017-10-17 2022-07-15 덕산네오룩스 주식회사 부착력 또는 접착성이 향상된 감광성 수지 조성물 및 그것들을 사용한 광 차단 층

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005208572A (ja) 2004-01-19 2005-08-04 Qimei Industry Co Ltd ブラックマトリックス用感光性樹脂組成物
WO2019194402A1 (ko) 2018-04-06 2019-10-10 주식회사 엘지화학 카도계 바인더 수지, 이를 포함하는 감광성 수지 조성물, 블랙 매트릭스, 컬러필터 및 디스플레이 장치

Also Published As

Publication number Publication date
JP2021086157A (ja) 2021-06-03
JP2022122980A (ja) 2022-08-23
US11774852B2 (en) 2023-10-03
CN112859521B (zh) 2025-06-06
CN112859521A (zh) 2021-05-28
KR20210066622A (ko) 2021-06-07
KR102683008B9 (ko) 2025-05-14
EP3828631A1 (en) 2021-06-02
US20210165320A1 (en) 2021-06-03

Similar Documents

Publication Publication Date Title
KR102683008B1 (ko) 감광성 수지 조성물 및 표시장치
KR102858304B1 (ko) 저반사율의 감광성 수지 조성물 및 이를 이용한 차광층
KR102875541B1 (ko) 수지, 수지 조성물 및 이를 이용한 표시장치
KR102420415B1 (ko) 부착력 또는 접착성이 향상된 감광성 수지 조성물 및 그것들을 사용한 광 차단 층
KR20220094479A (ko) 수지, 수지 조성물 및 이를 이용한 표시장치
KR102721867B1 (ko) 수지 조성물 및 이를 이용한 표시장치
US20230408914A1 (en) Resin, resin composition, and display device using the same
KR20220084914A (ko) 수지, 수지 조성물 및 이를 이용한 표시장치
US12426440B2 (en) Method for preparing pixel define layer
KR102818077B1 (ko) 무기 입자를 포함한 광경화 조성물 및 표시장치
US20240276783A1 (en) Method for preparing pixel define layer
US20240192594A1 (en) Method for preparing pixel define layer
US20240196661A1 (en) Method for preparing pixel define layer
KR20250110083A (ko) 저반사율의 감광성 수지 조성물 및 이를 이용한 차광층
KR20250138593A (ko) 감광성 수지 조성물 및 표시 장치
KR20250144141A (ko) 무기 입자를 포함한 광경화 조성물
KR20250144133A (ko) 수지, 수지 조성물 및 이를 이용한 표시장치
KR20240025888A (ko) 저반사율의 감광성 수지 조성물 및 이를 이용한 차광층
KR20250144136A (ko) 감광성 수지 조성물 및 표시 장치
KR20250110084A (ko) 저반사율의 감광성 수지 조성물 및 이를 이용한 차광층
KR20250110082A (ko) 저반사율의 감광성 수지 조성물 및 이를 이용한 차광층
KR20250110085A (ko) 수지, 수지 조성물 및 이를 이용한 표시장치
KR20250110081A (ko) 저반사율의 감광성 수지 조성물 및 이를 이용한 차광층
KR20250101746A (ko) 산란입자를 포함하고 광시야각을 가지는 레지스트 조성물
US20240176241A1 (en) Method for preparing pixel define layer

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R15-X000 Change to inventor requested

St.27 status event code: A-3-3-R10-R15-oth-X000

R16-X000 Change to inventor recorded

St.27 status event code: A-3-3-R10-R16-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

Fee payment year number: 1

St.27 status event code: A-2-2-U10-U11-oth-PR1002

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PZ0301 Request for patent revocation

St.27 status event code: A-4-5-L10-L15-rvc-PZ0301

PZ1301 Decision on request for patent revocation

St.27 status event code: A-5-5-W10-W00-rvc-PZ1301

Z131 Decision taken on request for patent cancellation [new post grant opposition system as of 20170301]
PG1701 Publication of correction

Patent document republication publication date: 20250514

Republication note text: Request for Public Notice of Correction Statement

Gazette number: 1026830080000

Gazette reference publication date: 20240710

St.27 status event code: A-5-5-P10-P19-oth-PG1701